JP4824888B2 - パターン化されたウエハ上のｘ線反射率測定 - Google Patents

パターン化されたウエハ上のｘ線反射率測定 Download PDF

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Publication number
JP4824888B2
JP4824888B2 JP2001513799A JP2001513799A JP4824888B2 JP 4824888 B2 JP4824888 B2 JP 4824888B2 JP 2001513799 A JP2001513799 A JP 2001513799A JP 2001513799 A JP2001513799 A JP 2001513799A JP 4824888 B2 JP4824888 B2 JP 4824888B2
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reflection data
ray
semiconductor wafer
probe beam
thin film
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JP2003529047A5 (https=
JP2003529047A (ja
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ローゼンクウエイグ、アラン
オプサル、ジョン
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サーマ‐ウェイブ・インク
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/08—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2001513799A 1999-08-02 2000-08-02 パターン化されたウエハ上のｘ線反射率測定 Expired - Fee Related JP4824888B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14683299P 1999-08-02 1999-08-02
US60/146,832 1999-08-02
US16267999P 1999-11-01 1999-11-01
US60/162,679 1999-11-01
US09/629,407 2000-08-01
US09/629,407 US6754305B1 (en) 1999-08-02 2000-08-01 Measurement of thin films and barrier layers on patterned wafers with X-ray reflectometry
PCT/US2000/020988 WO2001009566A1 (en) 1999-08-02 2000-08-02 X-ray reflectometry measurements on patterned wafers

Publications (3)

Publication Number Publication Date
JP2003529047A JP2003529047A (ja) 2003-09-30
JP2003529047A5 JP2003529047A5 (https=) 2010-12-09
JP4824888B2 true JP4824888B2 (ja) 2011-11-30

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JP2001513799A Expired - Fee Related JP4824888B2 (ja) 1999-08-02 2000-08-02 パターン化されたウエハ上のｘ線反射率測定

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US (1) US6754305B1 (https=)
EP (1) EP1203200A1 (https=)
JP (1) JP4824888B2 (https=)
WO (1) WO2001009566A1 (https=)

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US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
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US7379175B1 (en) 2002-10-15 2008-05-27 Kla-Tencor Technologies Corp. Methods and systems for reticle inspection and defect review using aerial imaging
US7123356B1 (en) 2002-10-15 2006-10-17 Kla-Tencor Technologies Corp. Methods and systems for inspecting reticles using aerial imaging and die-to-database detection
US7027143B1 (en) 2002-10-15 2006-04-11 Kla-Tencor Technologies Corp. Methods and systems for inspecting reticles using aerial imaging at off-stepper wavelengths
US7120228B2 (en) * 2004-09-21 2006-10-10 Jordan Valley Applied Radiation Ltd. Combined X-ray reflectometer and diffractometer
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US7804934B2 (en) 2004-12-22 2010-09-28 Jordan Valley Semiconductors Ltd. Accurate measurement of layer dimensions using XRF
US7103142B1 (en) * 2005-02-24 2006-09-05 Jordan Valley Applied Radiation Ltd. Material analysis using multiple X-ray reflectometry models
US7113566B1 (en) 2005-07-15 2006-09-26 Jordan Valley Applied Radiation Ltd. Enhancing resolution of X-ray measurements by sample motion
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
KR101374308B1 (ko) * 2005-12-23 2014-03-14 조르단 밸리 세미컨덕터즈 리미티드 Ｘｒｆ를 사용한 층 치수의 정밀 측정법
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US20070274447A1 (en) * 2006-05-15 2007-11-29 Isaac Mazor Automated selection of X-ray reflectometry measurement locations
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IL180482A0 (en) * 2007-01-01 2007-06-03 Jordan Valley Semiconductors Inspection of small features using x - ray fluorescence
JP4977498B2 (ja) * 2007-03-09 2012-07-18 株式会社日立製作所 薄膜積層体検査方法
US7680243B2 (en) * 2007-09-06 2010-03-16 Jordan Valley Semiconductors Ltd. X-ray measurement of properties of nano-particles
KR101841897B1 (ko) 2008-07-28 2018-03-23 케이엘에이-텐코어 코오포레이션 웨이퍼 상의 메모리 디바이스 영역에서 검출된 결함들을 분류하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들
US8243878B2 (en) 2010-01-07 2012-08-14 Jordan Valley Semiconductors Ltd. High-resolution X-ray diffraction measurement with enhanced sensitivity
US8687766B2 (en) 2010-07-13 2014-04-01 Jordan Valley Semiconductors Ltd. Enhancing accuracy of fast high-resolution X-ray diffractometry
EP3514529B1 (de) 2010-11-12 2023-03-15 EV Group E. Thallner GmbH Messeinrichtung zur messung von schichtdicken und fehlstellen eines waferstapels
US8437450B2 (en) 2010-12-02 2013-05-07 Jordan Valley Semiconductors Ltd. Fast measurement of X-ray diffraction from tilted layers
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
CN102820237B (zh) * 2011-06-11 2015-08-05 中国科学院微电子研究所 半导体器件中金属厚度的量测方法
US8781070B2 (en) 2011-08-11 2014-07-15 Jordan Valley Semiconductors Ltd. Detection of wafer-edge defects
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US9390984B2 (en) 2011-10-11 2016-07-12 Bruker Jv Israel Ltd. X-ray inspection of bumps on a semiconductor substrate
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
US9092846B2 (en) 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US9389192B2 (en) 2013-03-24 2016-07-12 Bruker Jv Israel Ltd. Estimation of XRF intensity from an array of micro-bumps
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
KR20150004602A (ko) * 2013-07-03 2015-01-13 삼성전자주식회사 대상물 두께 측정 방법
US9632043B2 (en) 2014-05-13 2017-04-25 Bruker Jv Israel Ltd. Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF
US9726624B2 (en) 2014-06-18 2017-08-08 Bruker Jv Israel Ltd. Using multiple sources/detectors for high-throughput X-ray topography measurement
US9606073B2 (en) 2014-06-22 2017-03-28 Bruker Jv Israel Ltd. X-ray scatterometry apparatus
US9829448B2 (en) 2014-10-30 2017-11-28 Bruker Jv Israel Ltd. Measurement of small features using XRF
US10151713B2 (en) 2015-05-21 2018-12-11 Industrial Technology Research Institute X-ray reflectometry apparatus for samples with a miniscule measurement area and a thickness in nanometers and method thereof
JP6999268B2 (ja) 2016-01-11 2022-01-18 ブルカー テクノロジーズ リミテッド Ｘ線スキャタロメトリーのための方法および装置
AU2017387909A1 (en) 2016-12-28 2019-06-27 Genentech, Inc. Treatment of advanced HER2 expressing cancer
US10816487B2 (en) 2018-04-12 2020-10-27 Bruker Technologies Ltd. Image contrast in X-ray topography imaging for defect inspection
JP2019191168A (ja) 2018-04-23 2019-10-31 ブルカー ジェイヴィ イスラエル リミテッドＢｒｕｋｅｒ Ｊｖ Ｉｓｒａｅｌ Ｌｔｄ． 小角ｘ線散乱測定用のｘ線源光学系
CN118624653A (zh) 2018-07-05 2024-09-10 布鲁克科技公司 小角度x射线散射测量
US11781999B2 (en) 2021-09-05 2023-10-10 Bruker Technologies Ltd. Spot-size control in reflection-based and scatterometry-based X-ray metrology systems
US12249059B2 (en) 2022-03-31 2025-03-11 Bruker Technologies Ltd. Navigation accuracy using camera coupled with detector assembly

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JPH0694427A (ja) * 1992-07-31 1994-04-05 Hitachi Ltd 加工溝深さ検出方法とその装置、並びにイオンミリング装置および電子・光学素子製造方法
JPH06221841A (ja) * 1993-01-26 1994-08-12 Hitachi Ltd 積層体の膜評価法及びこれを用いた膜評価装置及び薄膜製造装置
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JPH0694427A (ja) * 1992-07-31 1994-04-05 Hitachi Ltd 加工溝深さ検出方法とその装置、並びにイオンミリング装置および電子・光学素子製造方法
JPH06221841A (ja) * 1993-01-26 1994-08-12 Hitachi Ltd 積層体の膜評価法及びこれを用いた膜評価装置及び薄膜製造装置
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EP1203200A1 (en) 2002-05-08
WO2001009566A1 (en) 2001-02-08
US6754305B1 (en) 2004-06-22
JP2003529047A (ja) 2003-09-30

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