JP4813930B2 - 成膜方法および半導体装置の製造方法 - Google Patents
成膜方法および半導体装置の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 96
- 229910052757 nitrogen Inorganic materials 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 32
- 229910004129 HfSiO Inorganic materials 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 18
- 238000005121 nitriding Methods 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 154
- 238000000137 annealing Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 238000003795 desorption Methods 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
ウエハ上にHfSiO膜である高誘電率膜を形成する第1の膜形成工程、および前記ウエハ上に形成された前記高誘電率膜を窒化する第1の窒化工程を含むウエハ処理工程と、
前記ウエハとは別のウエハ上に前記高誘電率膜を形成する第2の膜形成工程、および前記別のウエハ上に形成された前記高誘電率膜を窒化する第2の窒化工程を含むコーティングラン工程と、を含み、
前記ウエハ処理工程および前記コーティングラン工程は、同一の反応室内で実行され、
前記第1の膜形成工程は、前記ウエハと前記別のウエハとが互いに対向して配置された状態で実行され、
前記コーティングラン工程は、前記ウエハ処理工程よりも前に実行されることを特徴とする成膜方法が提供される。
(a)ウエハ(以下、「製品ウエハ」という)上に高誘電率膜(HfSiO膜)を形成する第1の膜形成工程、および製品ウエハ上に形成されたHfSiO膜を窒化する第1の窒化工程を含むウエハ処理工程
(b)NPW上と、反応室内壁とにHfSiO膜を形成する第2の膜形成工程、およびNPW上と反応室内壁とに形成されたHfSiO膜を窒化する第2の窒化工程を含むコーティングラン工程
膜厚:1.5nm程度
温度:200〜300℃
反応ガス:HTB(ハフニウムターシャルブトキシ:Hf(O−tC4H9)4)、およびSi2H6
温度:700〜800℃
時間:10〜60分
2 ガス供給系
3 排気系
4 搬送系
5 ロードロック室
6 ヒータ
92 処理ウエハ
94 対向ウエハ
96 反応室
Claims (4)
- ウエハ上にHfSiO膜である高誘電率膜を形成する第1の膜形成工程、および前記ウエハ上に形成された前記高誘電率膜を窒化する第1の窒化工程を含むウエハ処理工程と、
前記ウエハとは別のウエハ上に前記高誘電率膜を形成する第2の膜形成工程、および前記別のウエハ上に形成された前記高誘電率膜を窒化する第2の窒化工程を含むコーティングラン工程と、を含み、
前記ウエハ処理工程および前記コーティングラン工程は、同一の反応室内で実行され、
前記第1の膜形成工程は、前記ウエハと前記別のウエハとが互いに対向して配置された状態で実行され、
前記コーティングラン工程は、前記ウエハ処理工程よりも前に実行されることを特徴とする成膜方法。 - 請求項1に記載の成膜方法において、
前記第2の膜形成工程においては、前記第2の窒化工程における前記反応室内の温度での窒素の前記高誘電率膜中の拡散長以上の厚みをもつ前記高誘電率膜を形成する成膜方法。 - 請求項1または2に記載の成膜方法において、
前記ウエハ処理工程は、前記コーティングラン工程の終了後24時間以内に開始される成膜方法。 - 請求項1乃至3いずれかに記載の成膜方法において、
窒素を含む高誘電率膜を成膜する工程を含むことを特徴とする半導体装置の製造方法。
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JP2006066945A JP4813930B2 (ja) | 2006-03-13 | 2006-03-13 | 成膜方法および半導体装置の製造方法 |
US11/715,847 US7615500B2 (en) | 2006-03-13 | 2007-03-09 | Method for depositing film and method for manufacturing semiconductor device |
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JP2006066945A JP4813930B2 (ja) | 2006-03-13 | 2006-03-13 | 成膜方法および半導体装置の製造方法 |
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JP2007243085A JP2007243085A (ja) | 2007-09-20 |
JP4813930B2 true JP4813930B2 (ja) | 2011-11-09 |
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JP (1) | JP4813930B2 (ja) |
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WO2009052177A1 (en) * | 2007-10-16 | 2009-04-23 | Fujifilm Electronic Materials U.S.A., Inc. | Novel photosensitive resin compositions |
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JP3070660B2 (ja) * | 1996-06-03 | 2000-07-31 | 日本電気株式会社 | 気体不純物の捕獲方法及び半導体製造装置 |
JP2001035842A (ja) | 1999-07-19 | 2001-02-09 | Sony Corp | Cvd装置及び半導体装置の製造方法 |
JP4455225B2 (ja) * | 2004-08-25 | 2010-04-21 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
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