JP4809340B2 - 絶対温度に比例する電圧回路 - Google Patents

絶対温度に比例する電圧回路 Download PDF

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Publication number
JP4809340B2
JP4809340B2 JP2007519760A JP2007519760A JP4809340B2 JP 4809340 B2 JP4809340 B2 JP 4809340B2 JP 2007519760 A JP2007519760 A JP 2007519760A JP 2007519760 A JP2007519760 A JP 2007519760A JP 4809340 B2 JP4809340 B2 JP 4809340B2
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Japan
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bipolar transistor
type bipolar
amplifier
transistor
voltage
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JP2008505412A5 (enExample
JP2008505412A (ja
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マリンカ ステファン
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アナログ・デバイシズ・インコーポレーテッド
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
JP2007519760A 2004-06-30 2005-06-14 絶対温度に比例する電圧回路 Expired - Fee Related JP4809340B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/881,300 2004-06-30
US10/881,300 US7173407B2 (en) 2004-06-30 2004-06-30 Proportional to absolute temperature voltage circuit
PCT/EP2005/052737 WO2006003083A1 (en) 2004-06-30 2005-06-14 A proportional to absolute temperature voltage circuit

Publications (3)

Publication Number Publication Date
JP2008505412A JP2008505412A (ja) 2008-02-21
JP2008505412A5 JP2008505412A5 (enExample) 2008-08-07
JP4809340B2 true JP4809340B2 (ja) 2011-11-09

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ID=34970849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007519760A Expired - Fee Related JP4809340B2 (ja) 2004-06-30 2005-06-14 絶対温度に比例する電圧回路

Country Status (7)

Country Link
US (1) US7173407B2 (enExample)
EP (1) EP1769301B1 (enExample)
JP (1) JP4809340B2 (enExample)
CN (1) CN100511083C (enExample)
AT (1) ATE534066T1 (enExample)
TW (1) TWI282050B (enExample)
WO (1) WO2006003083A1 (enExample)

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JP2008123480A (ja) * 2006-10-16 2008-05-29 Nec Electronics Corp 基準電圧発生回路
US7486129B2 (en) * 2007-03-01 2009-02-03 Freescale Semiconductor, Inc. Low power voltage reference
US7714563B2 (en) * 2007-03-13 2010-05-11 Analog Devices, Inc. Low noise voltage reference circuit
US20080265860A1 (en) * 2007-04-30 2008-10-30 Analog Devices, Inc. Low voltage bandgap reference source
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US20090027030A1 (en) * 2007-07-23 2009-01-29 Analog Devices, Inc. Low noise bandgap voltage reference
US7605578B2 (en) * 2007-07-23 2009-10-20 Analog Devices, Inc. Low noise bandgap voltage reference
US7598799B2 (en) * 2007-12-21 2009-10-06 Analog Devices, Inc. Bandgap voltage reference circuit
US7612606B2 (en) * 2007-12-21 2009-11-03 Analog Devices, Inc. Low voltage current and voltage generator
CN101226414B (zh) * 2008-01-30 2012-01-11 北京中星微电子有限公司 一种动态补偿基准电压的方法以及带隙基准电压源
US7750728B2 (en) * 2008-03-25 2010-07-06 Analog Devices, Inc. Reference voltage circuit
US7880533B2 (en) * 2008-03-25 2011-02-01 Analog Devices, Inc. Bandgap voltage reference circuit
US7902912B2 (en) * 2008-03-25 2011-03-08 Analog Devices, Inc. Bias current generator
US8710912B2 (en) * 2008-11-24 2014-04-29 Analog Device, Inc. Second order correction circuit and method for bandgap voltage reference
US8390363B2 (en) * 2008-11-25 2013-03-05 Linear Technology Corporation Circuit, trim and layout for temperature compensation of metal resistors in semi-conductor chips
US8475039B2 (en) 2009-04-22 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Providing linear relationship between temperature and digital code
US9004754B2 (en) * 2009-04-22 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal sensors and methods of operating thereof
US8207724B2 (en) * 2009-09-16 2012-06-26 Mediatek Singapore Pte. Ltd. Bandgap voltage reference with dynamic element matching
US8330445B2 (en) * 2009-10-08 2012-12-11 Intersil Americas Inc. Circuits and methods to produce a VPTAT and/or a bandgap voltage with low-glitch preconditioning
US8536854B2 (en) * 2010-09-30 2013-09-17 Cirrus Logic, Inc. Supply invariant bandgap reference system
US8378735B2 (en) * 2010-11-29 2013-02-19 Freescale Semiconductor, Inc. Die temperature sensor circuit
WO2013133733A1 (en) * 2012-03-05 2013-09-12 Freescale Semiconductor, Inc Reference voltage source and method for providing a curvature-compensated reference voltage
US9448579B2 (en) * 2013-12-20 2016-09-20 Analog Devices Global Low drift voltage reference
US9658637B2 (en) * 2014-02-18 2017-05-23 Analog Devices Global Low power proportional to absolute temperature current and voltage generator
WO2016118183A1 (en) 2015-01-24 2016-07-28 Schober Susan Marya Passive phased injection locked circuit
TWI564692B (zh) * 2015-03-11 2017-01-01 晶豪科技股份有限公司 能隙參考電路
US10345346B2 (en) * 2015-07-12 2019-07-09 Skyworks Solutions, Inc. Radio-frequency voltage detection
CA3031736A1 (en) 2015-07-29 2017-02-02 Circuit Seed, Llc Complementary current field-effect transistor devices and amplifiers
WO2017019981A1 (en) * 2015-07-30 2017-02-02 Circuit Seed, Llc Reference generator and current source transistor based on complementary current field-effect transistor devices
WO2017019973A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Multi-stage and feed forward compensated complementary current field effect transistor amplifiers
WO2017019978A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices
CN105204564A (zh) * 2015-10-30 2015-12-30 无锡纳讯微电子有限公司 一种低温度系数基准源电路
CA3043989A1 (en) 2015-12-14 2017-06-22 Circuit Seed, Llc Super-saturation current field effect transistor and trans-impedance mos device
US10078016B2 (en) * 2016-02-10 2018-09-18 Nxp Usa, Inc. On-die temperature sensor for integrated circuit
JP6685168B2 (ja) * 2016-04-15 2020-04-22 新日本無線株式会社 基準電圧回路
CN105955384B (zh) * 2016-07-19 2018-02-23 南方科技大学 一种非带隙基准电压源
US10222817B1 (en) 2017-09-29 2019-03-05 Cavium, Llc Method and circuit for low voltage current-mode bandgap
US9864389B1 (en) * 2016-11-10 2018-01-09 Analog Devices Global Temperature compensated reference voltage circuit
CN106411127A (zh) * 2016-11-22 2017-02-15 郑州搜趣信息技术有限公司 一种pwm调制转换电路
CN109002075B (zh) * 2017-06-07 2021-07-23 苏州瀚宸科技有限公司 双极型晶体管的基极电流镜像电路、rssi电路及芯片
US10557894B2 (en) 2017-08-07 2020-02-11 Linear Technology Holding Llc Reference signal correction circuit
US10691156B2 (en) * 2017-08-31 2020-06-23 Texas Instruments Incorporated Complementary to absolute temperature (CTAT) voltage generator
IT201700117023A1 (it) * 2017-10-17 2019-04-17 St Microelectronics Srl Circuito di riferimento bandgap, dispositivo e procedimento corrispondenti
CN108614611B (zh) * 2018-06-27 2024-06-04 上海治精微电子有限公司 低噪声带隙基准电压源、电子设备
US10409312B1 (en) * 2018-07-19 2019-09-10 Analog Devices Global Unlimited Company Low power duty-cycled reference
US10691155B2 (en) * 2018-09-12 2020-06-23 Infineon Technologies Ag System and method for a proportional to absolute temperature circuit
US10794761B2 (en) * 2018-11-09 2020-10-06 Linear Technology Holding Llc Logarithmic scale analog to digital converter for wide dynamic range avalanche photodiode current companding
US11068011B2 (en) * 2019-10-30 2021-07-20 Taiwan Semiconductor Manufacturing Company Ltd. Signal generating device and method of generating temperature-dependent signal
CN112256078B (zh) * 2020-10-30 2021-12-31 电子科技大学 一种正温系数电流源和一种零温度系数电流源
JP7535911B2 (ja) * 2020-10-30 2024-08-19 エイブリック株式会社 基準電圧回路
JP7599999B2 (ja) * 2021-03-12 2024-12-16 株式会社東芝 バンドギャップ型基準電圧発生回路
US11429125B1 (en) 2021-03-18 2022-08-30 Texas Instruments Incorporated Mitigation of voltage shift induced by mechanical stress in bandgap voltage reference circuits
US11983026B2 (en) 2022-03-16 2024-05-14 Apple Inc. Low output impedance voltage reference circuit
US12360547B2 (en) * 2022-06-03 2025-07-15 Mpics Innovations Pte. Ltd Highly tunable ultra-low temperature coefficient bandgap precision reference circuit
CN115328258B (zh) * 2022-09-22 2024-08-20 武汉泽声微电子有限公司 带隙基准电路
CN116400770B (zh) * 2023-04-13 2025-04-29 中国电子科技集团公司第五十八研究所 一种高精度低温漂的基准电压电路

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JPH0476715A (ja) * 1990-07-19 1992-03-11 Rohm Co Ltd 基準電圧発生回路
US5789906A (en) * 1996-04-10 1998-08-04 Kabushiki Kaisha Toshiba Reference voltage generating circuit and method
US6664847B1 (en) * 2002-10-10 2003-12-16 Texas Instruments Incorporated CTAT generator using parasitic PNP device in deep sub-micron CMOS process
US6690228B1 (en) * 2002-12-11 2004-02-10 Texas Instruments Incorporated Bandgap voltage reference insensitive to voltage offset
JP2007514225A (ja) * 2003-12-09 2007-05-31 アナログ・デバイシズ・インコーポレーテッド 改良型バンドギャップ基準電圧
JP2007518173A (ja) * 2004-01-13 2007-07-05 アナログ・デバイシズ・インコーポレーテッド 低オフセット・バンドギャップ電圧基準

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JPH0476715A (ja) * 1990-07-19 1992-03-11 Rohm Co Ltd 基準電圧発生回路
US5789906A (en) * 1996-04-10 1998-08-04 Kabushiki Kaisha Toshiba Reference voltage generating circuit and method
US6664847B1 (en) * 2002-10-10 2003-12-16 Texas Instruments Incorporated CTAT generator using parasitic PNP device in deep sub-micron CMOS process
US6690228B1 (en) * 2002-12-11 2004-02-10 Texas Instruments Incorporated Bandgap voltage reference insensitive to voltage offset
JP2007514225A (ja) * 2003-12-09 2007-05-31 アナログ・デバイシズ・インコーポレーテッド 改良型バンドギャップ基準電圧
JP2007518173A (ja) * 2004-01-13 2007-07-05 アナログ・デバイシズ・インコーポレーテッド 低オフセット・バンドギャップ電圧基準

Also Published As

Publication number Publication date
TWI282050B (en) 2007-06-01
JP2008505412A (ja) 2008-02-21
CN100511083C (zh) 2009-07-08
TW200609704A (en) 2006-03-16
CN1977225A (zh) 2007-06-06
ATE534066T1 (de) 2011-12-15
EP1769301B1 (en) 2011-11-16
WO2006003083A1 (en) 2006-01-12
US20060001413A1 (en) 2006-01-05
US7173407B2 (en) 2007-02-06
EP1769301A1 (en) 2007-04-04

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