JP4795745B2 - マイクロリソグラフィ用投影露光装置のための照明システム - Google Patents

マイクロリソグラフィ用投影露光装置のための照明システム Download PDF

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Publication number
JP4795745B2
JP4795745B2 JP2005221109A JP2005221109A JP4795745B2 JP 4795745 B2 JP4795745 B2 JP 4795745B2 JP 2005221109 A JP2005221109 A JP 2005221109A JP 2005221109 A JP2005221109 A JP 2005221109A JP 4795745 B2 JP4795745 B2 JP 4795745B2
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Japan
Prior art keywords
polarization
manipulator
polarization manipulator
light
illumination system
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Expired - Fee Related
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JP2005221109A
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English (en)
Japanese (ja)
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JP2006041540A5 (enExample
JP2006041540A (ja
Inventor
ダミアン・フィオルカ
ラルフ・リンドナー
ラルフ・シャーンウェバー
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
  • Microscoopes, Condenser (AREA)
JP2005221109A 2004-07-29 2005-07-29 マイクロリソグラフィ用投影露光装置のための照明システム Expired - Fee Related JP4795745B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US59198504P 2004-07-29 2004-07-29
US60/591,985 2004-07-29
US63156404P 2004-11-29 2004-11-29
US60/631,564 2004-11-29

Publications (3)

Publication Number Publication Date
JP2006041540A JP2006041540A (ja) 2006-02-09
JP2006041540A5 JP2006041540A5 (enExample) 2008-09-04
JP4795745B2 true JP4795745B2 (ja) 2011-10-19

Family

ID=35241233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005221109A Expired - Fee Related JP4795745B2 (ja) 2004-07-29 2005-07-29 マイクロリソグラフィ用投影露光装置のための照明システム

Country Status (5)

Country Link
US (1) US20060055909A1 (enExample)
EP (1) EP1621930A3 (enExample)
JP (1) JP4795745B2 (enExample)
KR (1) KR101212921B1 (enExample)
TW (1) TWI413853B (enExample)

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KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TWI385414B (zh) * 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
TWI379344B (en) * 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
US20060204204A1 (en) * 2004-12-20 2006-09-14 Markus Zenzinger Method for improving the optical polarization properties of a microlithographic projection exposure apparatus
TWI423301B (zh) * 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US20080192224A1 (en) * 2005-02-12 2008-08-14 Carl Zeiss Smt Ag Microlithographic Projection Exposure Apparatus
DE102006031807A1 (de) * 2005-07-12 2007-01-18 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator
KR100835495B1 (ko) 2006-05-12 2008-06-04 주식회사 하이닉스반도체 반도체 소자의 노광 장비 및 노광 방법
CN101479667B (zh) * 2006-07-03 2011-12-07 卡尔蔡司Smt有限责任公司 修正/修复光刻投影物镜的方法
DE102006038643B4 (de) * 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
US8035803B2 (en) * 2006-09-06 2011-10-11 Carl Zeiss Smt Gmbh Subsystem of an illumination system of a microlithographic projection exposure apparatus
DE102006050653A1 (de) 2006-10-24 2008-04-30 Carl Zeiss Smt Ag Verfahren und Vorrichtung zum stoffschlüssigen Verbinden eines optischen Elementes mit einer Fassung
WO2008064859A2 (en) 2006-12-01 2008-06-05 Carl Zeiss Smt Ag Optical system with an exchangeable, manipulable correction arrangement for reducing image aberrations
DE102007009867A1 (de) * 2007-02-28 2008-09-11 Carl Zeiss Smt Ag Abbildungsvorrichtung mit auswechselbaren Blenden sowie Verfahren hierzu
DE102007031691A1 (de) 2007-07-06 2009-01-08 Carl Zeiss Smt Ag Verfahren zum Betreiben einer Mikrolithographischen Projektionsbelichtunganlagen
US8077388B2 (en) * 2007-09-13 2011-12-13 University Of Utah Research Foundation Light polarization converter for converting linearly polarized light into radially polarized light and related methods
DE102007055567A1 (de) 2007-11-20 2009-05-28 Carl Zeiss Smt Ag Optisches System
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
EP2202580B1 (en) 2008-12-23 2011-06-22 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP5531518B2 (ja) * 2009-09-08 2014-06-25 株式会社ニコン 偏光変換ユニット、照明光学系、露光装置、およびデバイス製造方法
US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
DE102009055184B4 (de) 2009-12-22 2011-11-10 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US9389519B2 (en) * 2010-02-25 2016-07-12 Nikon Corporation Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
NL2006196A (en) * 2010-03-12 2011-09-13 Asml Netherlands Bv Lithographic apparatus and method.
WO2012041339A1 (en) * 2010-09-28 2012-04-05 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors
US8654332B2 (en) * 2011-06-22 2014-02-18 Teledyne Scientific & Imaging, Llc Chip-scale optics module for optical interrogators
DE102012206150B9 (de) 2012-04-16 2014-06-12 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206151A1 (de) 2012-04-16 2013-05-02 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206287A1 (de) 2012-04-17 2013-10-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012212864A1 (de) 2012-07-23 2013-08-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012223230A1 (de) 2012-12-14 2014-02-13 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102023210859A1 (de) * 2023-11-02 2025-05-08 Carl Zeiss Smt Gmbh Projektionssystem mit minimierten thermisch induzierten oszillierenden Aberrationen

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JP2569711B2 (ja) * 1988-04-07 1997-01-08 株式会社ニコン 露光制御装置及び該装置による露光方法
US5233460A (en) 1992-01-31 1993-08-03 Regents Of The University Of California Method and means for reducing speckle in coherent laser pulses
US5442184A (en) 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
US6285443B1 (en) 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
EP0658810B1 (de) * 1993-12-13 1998-11-25 Carl Zeiss Beleuchtungseinrichtung für ein optisches System mit einem Reticle-Maskierungssystem
DE19520563A1 (de) * 1995-06-06 1996-12-12 Zeiss Carl Fa Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
US5815247A (en) * 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
DE19535392A1 (de) * 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
DE19921795A1 (de) 1999-05-11 2000-11-23 Zeiss Carl Fa Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie
US6392890B1 (en) 2000-12-20 2002-05-21 Nortel Networks Limited Method and device for heat dissipation in an electronics system
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
EP1668420B1 (en) * 2003-09-26 2008-05-21 Carl Zeiss SMT AG Exposure method as well as projection exposure system for carrying out the method
US6970233B2 (en) * 2003-12-03 2005-11-29 Texas Instruments Incorporated System and method for custom-polarized photolithography illumination
JP4497968B2 (ja) * 2004-03-18 2010-07-07 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
EP1621930A3 (en) 2011-07-06
US20060055909A1 (en) 2006-03-16
KR101212921B1 (ko) 2012-12-14
KR20060048810A (ko) 2006-05-18
TW200611063A (en) 2006-04-01
TWI413853B (zh) 2013-11-01
JP2006041540A (ja) 2006-02-09
EP1621930A2 (en) 2006-02-01

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