JP4781445B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP4781445B2
JP4781445B2 JP2009070046A JP2009070046A JP4781445B2 JP 4781445 B2 JP4781445 B2 JP 4781445B2 JP 2009070046 A JP2009070046 A JP 2009070046A JP 2009070046 A JP2009070046 A JP 2009070046A JP 4781445 B2 JP4781445 B2 JP 4781445B2
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substrate
tray
support portion
plasma processing
electrodes
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Japanese (ja)
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JP2009147375A5 (enExample
JP2009147375A (ja
Inventor
尚吾 置田
浩海 朝倉
彰三 渡邉
隆三 宝珍
宏之 鈴木
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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JP2009070046A 2009-03-23 2009-03-23 プラズマ処理装置及びプラズマ処理方法 Expired - Lifetime JP4781445B2 (ja)

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JP2009070046A JP4781445B2 (ja) 2009-03-23 2009-03-23 プラズマ処理装置及びプラズマ処理方法

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JP2009070046A JP4781445B2 (ja) 2009-03-23 2009-03-23 プラズマ処理装置及びプラズマ処理方法

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JP2005297378A Division JP4361045B2 (ja) 2005-10-12 2005-10-12 プラズマ処理装置及びプラズマ処理方法

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JP2009147375A JP2009147375A (ja) 2009-07-02
JP2009147375A5 JP2009147375A5 (enExample) 2010-10-21
JP4781445B2 true JP4781445B2 (ja) 2011-09-28

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5593384B2 (ja) 2010-06-01 2014-09-24 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
US20120234229A1 (en) * 2011-03-16 2012-09-20 Applied Materials, Inc. Substrate support assembly for thin film deposition systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335616A (ja) * 1994-06-06 1995-12-22 Hitachi Ltd ウエハ処理装置
JP2000286328A (ja) * 1999-03-31 2000-10-13 Tokyo Electron Ltd ガス処理装置
JP4361045B2 (ja) * 2005-10-12 2009-11-11 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法

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