JP4773142B2 - ステージ及びそれを備えた半導体処理装置 - Google Patents

ステージ及びそれを備えた半導体処理装置 Download PDF

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Publication number
JP4773142B2
JP4773142B2 JP2005173703A JP2005173703A JP4773142B2 JP 4773142 B2 JP4773142 B2 JP 4773142B2 JP 2005173703 A JP2005173703 A JP 2005173703A JP 2005173703 A JP2005173703 A JP 2005173703A JP 4773142 B2 JP4773142 B2 JP 4773142B2
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stage
wafer
processing apparatus
nickel
covered
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Expired - Fee Related
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JP2005173703A
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Japanese (ja)
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JP2006351696A (ja
JP2006351696A5 (enExample
Inventor
慶久 嘉瀬
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2005173703A 2005-06-14 2005-06-14 ステージ及びそれを備えた半導体処理装置 Expired - Fee Related JP4773142B2 (ja)

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JP2005173703A JP4773142B2 (ja) 2005-06-14 2005-06-14 ステージ及びそれを備えた半導体処理装置

Applications Claiming Priority (1)

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JP2005173703A JP4773142B2 (ja) 2005-06-14 2005-06-14 ステージ及びそれを備えた半導体処理装置

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JP2006351696A JP2006351696A (ja) 2006-12-28
JP2006351696A5 JP2006351696A5 (enExample) 2008-07-31
JP4773142B2 true JP4773142B2 (ja) 2011-09-14

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JP2005173703A Expired - Fee Related JP4773142B2 (ja) 2005-06-14 2005-06-14 ステージ及びそれを備えた半導体処理装置

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010004620A1 (ja) * 2008-07-08 2010-01-14 東京エレクトロン株式会社 窒化膜除去装置及び窒化膜除去方法
JP5378902B2 (ja) * 2009-08-04 2013-12-25 株式会社アルバック プラズマ処理装置のプラズマ処理方法及びプラズマ処理装置
KR101586181B1 (ko) * 2013-03-28 2016-01-15 시바우라 메카트로닉스 가부시끼가이샤 적재대 및 플라즈마 처리 장치
KR102729098B1 (ko) * 2016-01-13 2024-11-13 어플라이드 머티어리얼스, 인코포레이티드 에칭 하드웨어를 위한 수소 플라즈마 기반 세정 프로세스
US10043674B1 (en) * 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) * 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
CN113000233B (zh) * 2019-12-18 2022-09-02 中微半导体设备(上海)股份有限公司 等离子体反应器及其气体喷嘴

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106301A (ja) * 1993-09-29 1995-04-21 Shibaura Eng Works Co Ltd プラズマ処理装置
JP3576828B2 (ja) * 1998-08-31 2004-10-13 株式会社東芝 エッチング方法及び基板処理装置
JP2000299305A (ja) * 1999-04-16 2000-10-24 Toshiba Corp プラズマ処理装置
JP2000306883A (ja) * 1999-04-19 2000-11-02 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2002306957A (ja) * 2001-04-11 2002-10-22 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4456412B2 (ja) * 2004-05-27 2010-04-28 株式会社日立製作所 プラズマ処理装置

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