JP4773142B2 - ステージ及びそれを備えた半導体処理装置 - Google Patents
ステージ及びそれを備えた半導体処理装置 Download PDFInfo
- Publication number
- JP4773142B2 JP4773142B2 JP2005173703A JP2005173703A JP4773142B2 JP 4773142 B2 JP4773142 B2 JP 4773142B2 JP 2005173703 A JP2005173703 A JP 2005173703A JP 2005173703 A JP2005173703 A JP 2005173703A JP 4773142 B2 JP4773142 B2 JP 4773142B2
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- Prior art keywords
- stage
- wafer
- processing apparatus
- nickel
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 61
- 229910052759 nickel Inorganic materials 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 20
- 239000012495 reaction gas Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 29
- 210000002381 plasma Anatomy 0.000 description 23
- 238000005530 etching Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000009849 deactivation Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005173703A JP4773142B2 (ja) | 2005-06-14 | 2005-06-14 | ステージ及びそれを備えた半導体処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005173703A JP4773142B2 (ja) | 2005-06-14 | 2005-06-14 | ステージ及びそれを備えた半導体処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006351696A JP2006351696A (ja) | 2006-12-28 |
| JP2006351696A5 JP2006351696A5 (enrdf_load_stackoverflow) | 2008-07-31 |
| JP4773142B2 true JP4773142B2 (ja) | 2011-09-14 |
Family
ID=37647242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005173703A Expired - Fee Related JP4773142B2 (ja) | 2005-06-14 | 2005-06-14 | ステージ及びそれを備えた半導体処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4773142B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010004620A1 (ja) * | 2008-07-08 | 2010-01-14 | 東京エレクトロン株式会社 | 窒化膜除去装置及び窒化膜除去方法 |
| JP5378902B2 (ja) * | 2009-08-04 | 2013-12-25 | 株式会社アルバック | プラズマ処理装置のプラズマ処理方法及びプラズマ処理装置 |
| WO2014157321A1 (ja) * | 2013-03-28 | 2014-10-02 | 芝浦メカトロニクス株式会社 | 載置台及びプラズマ処理装置 |
| WO2017123423A1 (en) * | 2016-01-13 | 2017-07-20 | Applied Materials, Inc. | Hydrogen plasma based cleaning process for etch hardware |
| US10043674B1 (en) * | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10297458B2 (en) * | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| CN113000233B (zh) * | 2019-12-18 | 2022-09-02 | 中微半导体设备(上海)股份有限公司 | 等离子体反应器及其气体喷嘴 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106301A (ja) * | 1993-09-29 | 1995-04-21 | Shibaura Eng Works Co Ltd | プラズマ処理装置 |
| JP3576828B2 (ja) * | 1998-08-31 | 2004-10-13 | 株式会社東芝 | エッチング方法及び基板処理装置 |
| JP2000299305A (ja) * | 1999-04-16 | 2000-10-24 | Toshiba Corp | プラズマ処理装置 |
| JP2000306883A (ja) * | 1999-04-19 | 2000-11-02 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP2002306957A (ja) * | 2001-04-11 | 2002-10-22 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| JP4456412B2 (ja) * | 2004-05-27 | 2010-04-28 | 株式会社日立製作所 | プラズマ処理装置 |
-
2005
- 2005-06-14 JP JP2005173703A patent/JP4773142B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006351696A (ja) | 2006-12-28 |
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