JP4772866B2 - バルク音波共振器装置 - Google Patents
バルク音波共振器装置 Download PDFInfo
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- JP4772866B2 JP4772866B2 JP2008513000A JP2008513000A JP4772866B2 JP 4772866 B2 JP4772866 B2 JP 4772866B2 JP 2008513000 A JP2008513000 A JP 2008513000A JP 2008513000 A JP2008513000 A JP 2008513000A JP 4772866 B2 JP4772866 B2 JP 4772866B2
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- 229910052751 metal Inorganic materials 0.000 claims description 97
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 5
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 5
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Description
図面において、対応する特長を示すのに、同じ参照符号を用いている。
(2)挿入損失は、増加する音響的なつながりのため、通過帯域にわたりより一層低い。
(3)開口での電気的適合は改善される。
(4)合計の音響的に活性な領域はほとんど増加しない(N=1は非常に乏しい性能を持つ特別な場合である)。加えて、この領域の全体的な縦横比はより一層適度になる。
(5)停止帯域における望まれない反応の鋭さは増加する。
これらの効果のすべては、最後を除いて有利である。
・第1部分12の指状部分16の少なくとも若干のものの長さ及び第2部分14の指状部分18の少なくとも若干のものの長さは等しくなくてよい、
・第1部分12の指状部分16の少なくとも若干は等しくない幅でよく及び/又は第2部分14の指状部分18の少なくとも若干は等しくない幅でよい、
・第1部分12の指状部分16の少なくとも若干のものの幅及び第2部分14の指状部分18の少なくとも若干のものの幅は等しくなくてよい、
・第1部分12の指状部分16の少なくとも若干のものの間の空隙は等しくない幅でよく及び/又は第2部分14の指状部分18の少なくとも若干のものの間の空隙は等しくない幅でよい。
Claims (5)
- バルク音波、BAWの共振器装置であり、第1及び第2の金属層及び介在性の圧電性層を備え、第1の金属層が間隔を開けられた第1及び第2の部分を備え、そこで、第1及び第2の部分が各々、複数の相互接続された指状部分として配置され、及びそこで第1部分の各々の複数の指状部分が音響的に第2部分の少なくとも1種の指状部分につながれ、及びそこで、第1部分が入力口につながれ、及び第2部分が出力口につながれ、第1金属層が、第1部分の指状部分及び第2部分の指状部分の間の音響的なつながりを提供するように配置される複数の更なる部分を備える、装置。
- 第2金属層が間隔を開けられた第3及び第4の部分を備え、そこで、第3及び第4の部分が各々、複数の相互接続された指状部分として配置され、そこで、第3部分の指状部分が第1部分の指状部分に対向するように配置され、及び第4部分の指状部分が第2部分の指状部分に対向するように配置され、及び第2金属層が、第3部分の指状部分及び第4部分の指状部分の間の音響的なつながりが提供されるように、複数の更なる部分を備える、請求項1記載のBAW共振器装置。
- バルク音波、BAWの共振器装置であり、第1及び第2の金属層及び介在性の圧電性層を備え、第1の金属層が間隔を開けられた第1及び第2の部分を備え、そこで、第1及び第2の部分が各々、複数の相互接続された指状部分として配置され、及びそこで第1部分の各々の複数の指状部分が音響的に第2部分の少なくとも1種の指状部分につながれ、及びそこで、第1部分が入力口につながれ、及び第2部分が出力口につながれ、第1部分の指状部分が第2部分の指状部分と織り交ざり、第2金属層が間隔を開けられた第3及び第4の部分を備え、そこで、第3及び第4の部分が各々、複数の相互接続された指状部分として配置され、そこで、第3部分の指状部分が第4部分の指状部分と織り交ざり、及びそこで、第3部分の指状部分が第1部分の指状部分に対向するように配置され、及び第4部分の指状部分が第2部分の指状部分に対向するように配置され、さらに、圧電性層内に位置付けられる第3の金属層を備える、BAW共振器装置。
- さらに、圧電性層内に位置付けられる第3の金属層を備える、請求項2記載のBAW共振器装置。
- 少なくとも1種の指状部分が長さ方向の細長いスロットを構成する、請求項1〜4の何れか1項記載のBAW共振器装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05104574 | 2005-05-27 | ||
EP05104574.8 | 2005-05-27 | ||
PCT/IB2006/051653 WO2006126168A1 (en) | 2005-05-27 | 2006-05-23 | Bulk acoustic wave resonator device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008543157A JP2008543157A (ja) | 2008-11-27 |
JP4772866B2 true JP4772866B2 (ja) | 2011-09-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008513000A Expired - Fee Related JP4772866B2 (ja) | 2005-05-27 | 2006-05-23 | バルク音波共振器装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8058768B2 (ja) |
EP (1) | EP1889357A2 (ja) |
JP (1) | JP4772866B2 (ja) |
KR (1) | KR101288190B1 (ja) |
CN (1) | CN101185241B (ja) |
WO (1) | WO2006126168A1 (ja) |
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US3621309A (en) * | 1969-04-19 | 1971-11-16 | Mitsumi Electric Co Ltd | Electric-mechanical transducer |
DE2231467C3 (de) * | 1972-06-27 | 1975-02-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Piezoelektrische Anordnung und Verfahren zur Vermeidung von Über Sprechkapazitäten |
JPS6261412A (ja) | 1985-09-11 | 1987-03-18 | Toshiba Corp | 弾性表面波装置 |
JP3206548B2 (ja) * | 1998-05-14 | 2001-09-10 | 株式会社村田製作所 | 表面波フィルタ、共用器、通信機装置 |
JP3291255B2 (ja) * | 1998-09-22 | 2002-06-10 | 日本碍子株式会社 | 弾性表面波デバイス |
GB0014963D0 (en) * | 2000-06-20 | 2000-08-09 | Koninkl Philips Electronics Nv | A bulk acoustic wave device |
JP3853252B2 (ja) * | 2002-05-16 | 2006-12-06 | 富士通メディアデバイス株式会社 | 弾性表面波素子 |
JP3622758B2 (ja) * | 2003-03-28 | 2005-02-23 | 松下電器産業株式会社 | 弾性表面波共振器、弾性表面波フィルタ、及びアンテナ共用器 |
JP3928632B2 (ja) | 2003-03-28 | 2007-06-13 | 松下電器産業株式会社 | 弾性表面波フィルタ |
JP2005092461A (ja) | 2003-09-16 | 2005-04-07 | Canon Sales Co Inc | データ編集装置及びその制御方法並びに制御プログラム |
EP1935093A2 (en) * | 2005-09-30 | 2008-06-25 | Nxp B.V. | Improvements in or relating to thin-film bulk-acoustic wave (baw) resonators |
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JPS58173912A (ja) * | 1982-04-05 | 1983-10-12 | Hiroshi Shimizu | 圧電体屈曲振動子および圧電フィルタ |
JPS59172825A (ja) * | 1983-03-22 | 1984-09-29 | Hiroshi Shimizu | 圧電単体屈曲振動子および圧電フィルタ |
JP2002541704A (ja) * | 1999-03-30 | 2002-12-03 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 構成素子 |
JP2005318547A (ja) * | 2004-03-30 | 2005-11-10 | Sanyo Electric Co Ltd | バルク波デバイス |
Also Published As
Publication number | Publication date |
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WO2006126168A8 (en) | 2007-03-01 |
CN101185241A (zh) | 2008-05-21 |
US8058768B2 (en) | 2011-11-15 |
CN101185241B (zh) | 2010-10-06 |
KR20080016679A (ko) | 2008-02-21 |
JP2008543157A (ja) | 2008-11-27 |
US20100039000A1 (en) | 2010-02-18 |
WO2006126168B1 (en) | 2007-04-12 |
EP1889357A2 (en) | 2008-02-20 |
WO2006126168A1 (en) | 2006-11-30 |
KR101288190B1 (ko) | 2013-07-18 |
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