JP4767167B2 - 濃度変調コーティング - Google Patents
濃度変調コーティング Download PDFInfo
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3694—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer having a composition gradient through its thickness
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
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Description
Claims (31)
- 低放射率コーティングを備えた基材であって、前記低放射率コーティングが、外側に向かって順に、
a)誘電内側層と、
b)日射反射性の高い物質を含む第1の赤外反射層と、
c)第1の誘電物質の濃度が連続的に減少し、第2の誘電物質の濃度が連続的に増大している第1のグレーデッドフィルム領域を含み、前記第1の誘電物質と前記第2の誘電物質とは異なる物質である、濃度変調中間層と、
d)日射反射性の高い物質を含む第2の赤外反射層と、
e)誘電外側層とを含む、基材。 - 前記濃度変調中間層が、前記中間層の厚み全体に渡って均一な屈折率を有する請求項1記載の基材。
- 前記屈折率が、1.9〜2.2である請求項2記載の基材。
- 前記濃度変調中間層が、均質な誘電層同士間の不連続な界面を含まない請求項1〜3のいずれかに記載の基材。
- 前記濃度変調中間層が、200オングストローム以上の厚みを有する均質なフィルム領域を含まない請求項1〜4のいずれかに記載の基材。
- 前記第1のグレーデッドフィルム領域において、前記第1の誘電物質の濃度が、前記第2の誘電物質が次第に増大するのに従って、次第に減少する請求項1〜5のいずれかに記載の基材。
- 前記第1の誘電物質が酸化錫であり、前記第2の誘電物質が酸化亜鉛であり、前記第1のグレーデッドフィルム領域が、酸化錫に富む内側領域から、酸化亜鉛に富む外側領域にまで延びている請求項1〜6のいずれかに記載の基材。
- 酸化錫に富む前記内側領域が、第1のブロッカー層の直上に配置されており、前記第1のブロッカー層が、前記第1の赤外反射層の直上に配置されている請求項7記載の基材。
- 前記濃度変調中間層が、外側に向かって連続して順に、
i) 前記第1の誘電物質に富む第1の高濃度領域と、
ii) 前記第1のグレーデッドフィルム領域と、
iii)前記第2の誘電物質に富む第2の高濃度領域と、
iv) 前記第2の誘電物質の濃度が連続的に減少し、第3の誘電物質の濃度が連続的に増大しており、前記第2の誘電物質と前記第3の誘電物質とは異なる物質である、第2のグレーデッドフィルム領域と、
v) 前記第3の誘電物質に富む第3の高濃度領域とを含む、請求項1〜8のいずれかに記載の基材。 - 前記第3の誘電物質が酸化亜鉛であり、前記第3の高濃度領域が酸化亜鉛に富んだ領域である請求項9記載の基材。
- 前記第1の誘電物質と前記第3の誘電物質とが、両方とも同じ物質であり、前記第1の高濃度領域と前記第3の高濃度領域とが、両方とも同じ物質に富む請求項9または10に記載の基材。
- 前記第2の誘電物質が、酸化錫、亜鉛・錫酸化物および酸化チタンからなる群より選択される酸化物である請求項9〜11のいずれかに記載の基材。
- 前記第1の高濃度領域が、前記第1の誘電物質からなる第1の均質フィルム領域を含み、前記第2の高濃度領域が、前記第2の誘電物質からなる第2の均質フィルム領域を含み、前記第3の高濃度領域が、前記第3の誘電物質からなる第3の均質フィルム領域を含む請求項9〜12のいずれかに記載の基材。
- 前記均質フィルム領域の各々が、200オングストローム未満の厚みを有する請求項13記載の基材。
- 前記濃度変調中間層が、外側に向かって連続して順に、
i) 前記第1の誘電物質に富む第1の高濃度領域と、
ii) 前記第1のグレーデッドフィルム領域と、
iii)前記第2の誘電物質に富む第2の高濃度領域と、
iv) 前記第2の誘電物質の濃度が連続的に減少し、第3の誘電物質の濃度が連続的に増大しており、前記第2の誘電物質と前記第3の誘電物質とは異なる物質である、第2のグレーデッドフィルム領域と、
v) 前記第3の誘電物質に富む第3の高濃度領域と、
vi) 前記第3の誘電物質の濃度が連続的に減少し、第4の誘電物質の濃度が連続的に増大しており、前記第3の誘電物質と前記第4の誘電物質とは異なる物質である、第3のグレーデッドフィルム領域と、
vii)前記第4の誘電物質に富む第4の高濃度領域と、
viii) 前記第4の誘電物質の濃度が連続的に減少し、第5の誘電物質の濃度が連続的に増大しており、前記第4の誘電物質と前記第5の誘電物質とは異なる物質である、第4のグレーデッドフィルム領域と、
ix)前記第5の誘電物質に富む第5の高濃度領域とを含む、請求項1記載の基材。 - 前記第5の誘電物質が酸化亜鉛であり、前記第5の高濃度領域が、酸化亜鉛に富んだ領域である請求項15記載の基材。
- 前記第1、前記第3および前記第5の誘電物質が、全て同じ物質であり、前記第1、前記第3および前記第5の高濃度領域が、全て同じ物質に富む請求項15または16に記載の基材。
- 前記第2の誘電物質と前記第4の誘電物質とが、両方とも同じ物質であり、前記第2の高濃度領域と前記第4の高濃度領域とが、両方とも同じ物質に富む請求項15〜17のいずれか記載の基材。
- 前記第2の誘電物質と前記第4の誘電物質とが、両方とも、酸化錫、亜鉛・錫酸化物および酸化チタンからなる群より選択される酸化物である請求項18記載の基材。
- 前記第1の高濃度領域が、前記第1の誘電物質からなる第1の均質フィルム領域を含み、前記第2の高濃度領域が、前記第2の誘電物質からなる第2の均質フィルム領域を含み、前記第3の高濃度領域が、前記第3の誘電物質からなる第3の均質フィルム領域を含み、前記第4の高濃度領域が、前記第4の誘電物質からなる第4の均質フィルム領域を含み、前記第5の高濃度領域が、前記第5の誘電物質からなる第5の均質フィルム領域を含む、請求項15〜19のいずれかに記載の基材。
- 前記均質フィルム領域の各々が、200オングストローム未満の厚みを有する請求項20記載の基材。
- 前記誘電内側層が、第3の誘電物質の濃度が連続的に減少し、第4の誘電物質の濃度が連続的に増大している第2のグレーデッドフィルム領域を含む濃度変調内側層であり、前記第3の誘電物質と前記第4の誘電物質とは異なる物質である、請求項1記載の基材。
- 前記誘電外側層が、第5の誘電物質の濃度が連続的に減少し、第6の誘電物質の濃度が連続的に増大している第3のグレーデッドフィルム領域を含む濃度変調外側層であり、前記第5の誘電物質と前記第6の誘電物質とは異なる物質である、請求項22記載の基材。
- 前記濃度変調内側層、中間層および外側層が、均質な誘電層同士間の不連続な界面を含まない請求項23記載の基材。
- 低放射率コーティングを備えた基材であって、前記低放射率コーティングが、外側に向かって順に、
a)酸化錫の濃度が連続的に減少し、酸化亜鉛または亜鉛・錫酸化物または亜鉛・アルミニウム酸化物の濃度が連続的に増大している第1のグレーデッドフィルム領域を含み、前記第1のグレーデッドフィルム領域が、酸化錫に富んだ内側領域から、酸化亜鉛または亜鉛・錫酸化物または亜鉛・アルミニウム酸化物に富んだ外側領域にまで延びている、濃度変調内側層と、
b)日射放射性の高い物質を含む第1の赤外反射層と、
c)誘電中間層と、
d)日射放射性の高い物質を含む第2の赤外反射層と、
e)誘電外側層とを含む、基材。 - 前記第1のグレーデッドフィルム領域の酸化錫に富んだ前記内側領域が、酸化錫からなる請求項25記載の基材。
- 前記第1のグレーデッドフィルム領域の酸化錫に富んだ前記内側部分が、基材の直上に堆積されている請求項25または26に記載の基材。
- 前記第1の赤外反射層が、前記第1のグレーデッドフィルム領域の前記外側領域の直上に堆積されている請求項25〜27のいずれかに記載の基材。
- 前記濃度変調内側層が、外側に向かって連続して順に、
i) 酸化錫に富んだ第1の高濃度領域と、
ii) 前記第1のグレーデッドフィルム領域と、
iii)酸化亜鉛または亜鉛・錫酸化物に富んだ第2の高濃度領域と、
iv) 酸化亜鉛または亜鉛・錫酸化物の濃度が連続的に減少し、酸化錫の濃度が連続的に増大している第2のグレーデッドフィルム領域と、
v) 酸化錫に富んだ第3の高濃度領域と、
vi) 酸化錫の濃度が連続的に減少し、酸化亜鉛または亜鉛・錫酸化物の濃度が連続的に増大している第3のグレーデッドフィルム領域と、
vii)酸化亜鉛または亜鉛・錫酸化物に富んだ第4の高濃度領域とを含む、請求項25〜28のいずれかに記載の基材。 - 請求項1〜24のいずれかに記載のコーテッド基材を製造する方法であって、基材上に低放射率コーティングを堆積することを含み、前記コーティングが、外側に向かって順に、
a)誘電内側層と、
b)日射反射性の高い物質を含む第1の赤外反射層と、
c)第1の誘電物質の濃度が連続的に減少し、第2の誘電物質の濃度が連続的に増大している第1のグレーデッドフィルム領域を含み、前記第1の誘電物質と前記第2の誘電物質とは異なる物質である、濃度変調中間層と、
d)日射反射性の高い物質を含む第2の赤外反射層と、
e)誘電外側層とを含む、方法。 - 請求項25〜29のいずれかに記載のコーテッド基材を製造する方法であって、基材上に低放射コーティングを堆積することを含み、前記コーティングが、外側に向かって順に、
a)酸化錫の濃度が連続的に減少し、酸化亜鉛または亜鉛・錫酸化物または亜鉛・アルミニウム酸化物の濃度が連続的に増大している第1のグレーデッドフィルム領域を含み、前記第1のグレーデッドフィルム領域が、酸化錫に富んだ内側領域から、酸化亜鉛または亜鉛・錫酸化物または亜鉛・アルミニウム酸化物に富んだ外側領域にまで延びている、濃度変調内側層と、
b)日射放射性の高い物質を含む第1の赤外反射層と、
c)誘電中間層と、
d)日射放射性の高い物質を含む第2の赤外反射層と、
e)誘電外側層とを含む、方法。
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DE602004011062T2 (de) | 2009-01-02 |
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US20050026002A1 (en) | 2005-02-03 |
DE602004011062D1 (de) | 2008-02-14 |
ATE382585T1 (de) | 2008-01-15 |
CA2530443C (en) | 2012-08-28 |
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