JP4766190B2 - 電気光学装置および電子機器 - Google Patents
電気光学装置および電子機器 Download PDFInfo
- Publication number
- JP4766190B2 JP4766190B2 JP2010205212A JP2010205212A JP4766190B2 JP 4766190 B2 JP4766190 B2 JP 4766190B2 JP 2010205212 A JP2010205212 A JP 2010205212A JP 2010205212 A JP2010205212 A JP 2010205212A JP 4766190 B2 JP4766190 B2 JP 4766190B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electro
- electrode
- spacer
- pixel circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 157
- 125000006850 spacer group Chemical group 0.000 claims description 71
- 239000000853 adhesive Substances 0.000 claims description 55
- 230000001070 adhesive effect Effects 0.000 claims description 55
- 239000010410 layer Substances 0.000 claims description 27
- 238000005192 partition Methods 0.000 claims description 23
- 239000002346 layers by function Substances 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 description 57
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000010406 cathode material Substances 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- -1 polyparaphenylene vinylene Polymers 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229920006332 epoxy adhesive Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000285 Polydioctylfluorene Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- MUSLHCJRTRQOSP-UHFFFAOYSA-N rhodamine 101 Chemical compound [O-]C(=O)C1=CC=CC=C1C(C1=CC=2CCCN3CCCC(C=23)=C1O1)=C2C1=C(CCC1)C3=[N+]1CCCC3=C2 MUSLHCJRTRQOSP-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
Claims (2)
- 電気光学素子が形成された第1基板と、画素回路が形成された第2基板とを、前記電気光学素子と前記画素回路が対向するように貼り合わせ、前記電気光学素子と前記画素回路を電気的に接続してなる電気光学装置において、
前記電気光学素子は、共通電極である第1電極と、個別電極である第2電極と、前記第1電極と前記第2電極との間に挟持された発光層を含む機能層とを有し、
前記画素回路は、前記第2電極に対向する位置に画素電極を有し、
前記第2電極と前記画素電極との間に配置され、前記第2電極と前記画素電極とを電気的に接続させる導電性接着剤と、
前記電気光学素子と前記画素回路とを含む画素のうち前記電気光学素子と前記画素回路の素子とが配置された領域以外の領域に配置され、前記第1基板と前記第2基板との間隔を保持するスペーサと、を備え、
前記スペーサーは、前記第1基板上で前記電気光学素子の前記第2電極を囲うように設けられた逆テーパ隔壁であることを特徴とする電気光学装置。 - 請求項1に記載の電気光学装置を備えたことを特徴とする電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010205212A JP4766190B2 (ja) | 2010-09-14 | 2010-09-14 | 電気光学装置および電子機器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010205212A JP4766190B2 (ja) | 2010-09-14 | 2010-09-14 | 電気光学装置および電子機器 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004120320A Division JP4691898B2 (ja) | 2004-04-15 | 2004-04-15 | 電気光学装置および電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011028283A JP2011028283A (ja) | 2011-02-10 |
JP4766190B2 true JP4766190B2 (ja) | 2011-09-07 |
Family
ID=43637006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010205212A Expired - Fee Related JP4766190B2 (ja) | 2010-09-14 | 2010-09-14 | 電気光学装置および電子機器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4766190B2 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH113048A (ja) * | 1997-06-10 | 1999-01-06 | Canon Inc | エレクトロ・ルミネセンス素子及び装置、並びにその製造法 |
JP2002244589A (ja) * | 2001-02-20 | 2002-08-30 | Hitachi Ltd | 有機発光装置およびその製造方法 |
JP2003066859A (ja) * | 2001-08-28 | 2003-03-05 | Sharp Corp | 表示装置およびその製造方法 |
JP4176400B2 (ja) * | 2001-09-06 | 2008-11-05 | シャープ株式会社 | 表示装置 |
JP2003208108A (ja) * | 2002-01-10 | 2003-07-25 | Matsushita Electric Ind Co Ltd | 表示装置およびその製造方法 |
JP2003280552A (ja) * | 2002-03-22 | 2003-10-02 | Dainippon Printing Co Ltd | 画像表示装置 |
KR100464864B1 (ko) * | 2002-04-25 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
JP2003332064A (ja) * | 2002-05-09 | 2003-11-21 | Casio Comput Co Ltd | Elパネル及びその製造方法 |
JP2004014447A (ja) * | 2002-06-11 | 2004-01-15 | Sony Corp | 表示装置およびその製造方法 |
KR100621865B1 (ko) * | 2003-12-29 | 2006-09-13 | 엘지.필립스 엘시디 주식회사 | 유기 전계 발광 소자 및 그 제조방법 |
-
2010
- 2010-09-14 JP JP2010205212A patent/JP4766190B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011028283A (ja) | 2011-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102541445B1 (ko) | 디스플레이 장치 | |
TWI546953B (zh) | 可撓性顯示裝置 | |
KR102395917B1 (ko) | 표시 장치 및 그 제조 방법 | |
KR101699911B1 (ko) | 유기 발광 표시 장치 | |
US10177207B2 (en) | Organic light emitting diode display and manufacturing method thereof | |
KR101860036B1 (ko) | 씨오지 타입 플렉서블 유기발광소자 | |
US20100193778A1 (en) | Organic light emitting diode display and method of manufacturing the same | |
US11355568B2 (en) | Organic light emitting diode display device | |
US8896236B2 (en) | Organic light emitting diode display | |
US7763899B2 (en) | Electro-optical device and electronic apparatus having a plurality of pixel sections disposed in a staggered manner | |
JP4409482B2 (ja) | 平板表示パネル及びこれを備える平板表示装置 | |
US7728515B2 (en) | Light-emitting circuit board and light-emitting display device | |
CN114171563A (zh) | 显示面板和显示装置 | |
WO2010090298A1 (ja) | 表示装置用基板およびその製造方法 | |
JP2007207569A (ja) | 光デバイス、および光デバイスの製造方法 | |
JP4691898B2 (ja) | 電気光学装置および電子機器 | |
US10916738B2 (en) | Display panel and manufacturing method of the display panel, display device | |
KR102037487B1 (ko) | 유기전계 발광소자의 제조 방법 및 그 방법에 의해 제조된 유기전계 발광소자 | |
JP2005203128A (ja) | 電気光学装置および電子機器 | |
JP4766190B2 (ja) | 電気光学装置および電子機器 | |
US20220199935A1 (en) | Display Panel | |
JP2017174607A (ja) | 有機el表示装置の製造方法 | |
JP2005093335A (ja) | 電気光学装置及びその製造方法並びに表示装置 | |
CN117412631A (zh) | 显示装置和用于提供显示装置的方法 | |
KR101361958B1 (ko) | 유기발광 표시장치 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110228 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110517 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110530 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140624 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |