JP4763966B2 - 複数ターゲットスパッタリング用の装置及び方法 - Google Patents

複数ターゲットスパッタリング用の装置及び方法 Download PDF

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Publication number
JP4763966B2
JP4763966B2 JP2003542670A JP2003542670A JP4763966B2 JP 4763966 B2 JP4763966 B2 JP 4763966B2 JP 2003542670 A JP2003542670 A JP 2003542670A JP 2003542670 A JP2003542670 A JP 2003542670A JP 4763966 B2 JP4763966 B2 JP 4763966B2
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JP
Japan
Prior art keywords
target
sputtering
target substrate
processed
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003542670A
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English (en)
Japanese (ja)
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JP2005508447A (ja
JP2005508447A5 (enExample
Inventor
ジョンソン、ポール、マーコフ
ポンド、ノーマン、エイチ
ラック、ロバート
フォ、ナザン
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Intevac Inc
Original Assignee
Intevac Inc
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Publication date
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Publication of JP2005508447A publication Critical patent/JP2005508447A/ja
Publication of JP2005508447A5 publication Critical patent/JP2005508447A5/ja
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Publication of JP4763966B2 publication Critical patent/JP4763966B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacturing Optical Record Carriers (AREA)
JP2003542670A 2001-11-03 2002-10-30 複数ターゲットスパッタリング用の装置及び方法 Expired - Fee Related JP4763966B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/006,899 2001-11-03
US10/006,899 US6635154B2 (en) 2001-11-03 2001-11-03 Method and apparatus for multi-target sputtering
PCT/US2002/034603 WO2003040428A1 (en) 2001-11-03 2002-10-30 Method and apparatus for multi-target sputtering

Publications (3)

Publication Number Publication Date
JP2005508447A JP2005508447A (ja) 2005-03-31
JP2005508447A5 JP2005508447A5 (enExample) 2011-06-23
JP4763966B2 true JP4763966B2 (ja) 2011-08-31

Family

ID=21723164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003542670A Expired - Fee Related JP4763966B2 (ja) 2001-11-03 2002-10-30 複数ターゲットスパッタリング用の装置及び方法

Country Status (5)

Country Link
US (1) US6635154B2 (enExample)
EP (1) EP1448806A4 (enExample)
JP (1) JP4763966B2 (enExample)
CN (1) CN100352969C (enExample)
WO (1) WO2003040428A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100450749B1 (ko) * 2001-12-28 2004-10-01 한국전자통신연구원 어븀이 도핑된 실리콘 나노 점 어레이 제조 방법 및 이에이용되는 레이저 기화 증착 장비
DE102004006419A1 (de) * 2004-02-09 2005-09-08 Applied Films Gmbh & Co. Kg Energie- und Medienanschluss für eine aus mehreren Kammern bestehende Beschichtungsanlage
US20050224343A1 (en) * 2004-04-08 2005-10-13 Richard Newcomb Power coupling for high-power sputtering
US7823405B2 (en) * 2004-06-18 2010-11-02 Williams Arthur R Rotating bernoulli heat pump
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
US20060096855A1 (en) * 2004-11-05 2006-05-11 Richard Newcomb Cathode arrangement for atomizing a rotatable target pipe
US7918094B2 (en) * 2005-03-09 2011-04-05 Machflow Energy, Inc. Centrifugal bernoulli heat pump
US20060278524A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
US20060278521A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for controlling ion density and energy using modulated power signals
KR20080025411A (ko) * 2005-06-24 2008-03-20 아써 윌리엄 열전달용 벤튜리 덕트
US20070012557A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc Low voltage sputtering for large area substrates
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
US20070095281A1 (en) * 2005-11-01 2007-05-03 Stowell Michael W System and method for power function ramping of microwave liner discharge sources
US20070209932A1 (en) * 2006-03-10 2007-09-13 Veeco Instruments Inc. Sputter deposition system and methods of use
US7908872B2 (en) * 2006-08-03 2011-03-22 Machflow Energy Inc. Rare-gas-based bernoulli heat pump and method
WO2009101909A1 (ja) * 2008-02-13 2009-08-20 Shibaura Mechatronics Corporation マグネトロンスパッタ装置及びマグネトロンスパッタ方法
DE102010046780A1 (de) 2010-09-28 2012-03-29 Singulus Technologies Ag Beschichten von Substraten mit einer Legierung mittels Kathodenzerstäubung
WO2013052713A1 (en) * 2011-10-05 2013-04-11 Intevac, Inc. Inductive/capacitive hybrid plasma source and system with such chamber
US9281231B2 (en) 2011-10-12 2016-03-08 Ferrotec (Usa) Corporation Non-contact magnetic drive assembly with mechanical stop elements
CN103681975B (zh) * 2013-12-27 2017-01-25 柳州百韧特先进材料有限公司 一种制备cigs太阳能电池的方法
US9368330B2 (en) 2014-05-02 2016-06-14 Bh5773 Ltd Sputtering targets and methods
CN104749975B (zh) * 2015-01-30 2017-12-01 深圳达实智能股份有限公司 玻璃镀膜工艺电源配置自动识别系统及方法
JP7039224B2 (ja) 2016-10-13 2022-03-22 芝浦メカトロニクス株式会社 電子部品の製造装置及び電子部品の製造方法
CN111304615B (zh) * 2020-04-01 2024-07-30 昆山浦元真空技术工程有限公司 战斗机驾驶舱玻璃罩表面物理气相沉积设备
CN116180029B (zh) * 2023-04-26 2023-07-21 电子科技大学 一种柔性薄膜的分层磁控溅射镀膜装置及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1594667A (enExample) * 1968-10-15 1970-06-08
US3803019A (en) * 1971-10-07 1974-04-09 Hewlett Packard Co Sputtering system
CH558428A (de) * 1972-11-23 1975-01-31 Balzers Patent Beteilig Ag Target-wechselvorrichtung fuer die zerstaeubung mittels ionen.
US3864239A (en) * 1974-04-22 1975-02-04 Nasa Multitarget sequential sputtering apparatus
GB2228948A (en) * 1989-02-28 1990-09-12 British Aerospace Fabrication of thin films from a composite target
US5215420A (en) 1991-09-20 1993-06-01 Intevac, Inc. Substrate handling and processing system
CN1087130A (zh) * 1992-11-16 1994-05-25 四川大学 高真空多靶磁控溅射方法和装置
US5705044A (en) 1995-08-07 1998-01-06 Akashic Memories Corporation Modular sputtering machine having batch processing and serial thin film sputtering
TW399102B (en) * 1995-11-20 2000-07-21 Anelva Co Ltd Method for depositing magnetic film on both substrate surfaces and mechanism for performing same
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
DE19830223C1 (de) * 1998-07-07 1999-11-04 Techno Coat Oberflaechentechni Vorrichtung und Verfahren zum mehrlagigen PVD - Beschichten von Substraten
US6328858B1 (en) * 1998-10-01 2001-12-11 Nexx Systems Packaging, Llc Multi-layer sputter deposition apparatus
US6328856B1 (en) * 1999-08-04 2001-12-11 Seagate Technology Llc Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device
US6495010B2 (en) * 2000-07-10 2002-12-17 Unaxis Usa, Inc. Differentially-pumped material processing system
JP4516199B2 (ja) 2000-09-13 2010-08-04 キヤノンアネルバ株式会社 スパッタ装置及び電子デバイス製造方法

Also Published As

Publication number Publication date
EP1448806A1 (en) 2004-08-25
JP2005508447A (ja) 2005-03-31
EP1448806A4 (en) 2006-11-08
WO2003040428A1 (en) 2003-05-15
US6635154B2 (en) 2003-10-21
CN1639381A (zh) 2005-07-13
CN100352969C (zh) 2007-12-05
US20030085114A1 (en) 2003-05-08

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