JP4762274B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4762274B2
JP4762274B2 JP2008184723A JP2008184723A JP4762274B2 JP 4762274 B2 JP4762274 B2 JP 4762274B2 JP 2008184723 A JP2008184723 A JP 2008184723A JP 2008184723 A JP2008184723 A JP 2008184723A JP 4762274 B2 JP4762274 B2 JP 4762274B2
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JP
Japan
Prior art keywords
switching element
layer
drain
main electrode
conductivity type
Prior art date
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Expired - Fee Related
Application number
JP2008184723A
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English (en)
Japanese (ja)
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JP2010027709A (ja
JP2010027709A5 (https=
Inventor
和敏 中村
紀夫 安原
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Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2008184723A priority Critical patent/JP4762274B2/ja
Priority to US12/500,015 priority patent/US8253398B2/en
Publication of JP2010027709A publication Critical patent/JP2010027709A/ja
Publication of JP2010027709A5 publication Critical patent/JP2010027709A5/ja
Application granted granted Critical
Publication of JP4762274B2 publication Critical patent/JP4762274B2/ja
Priority to US13/461,918 priority patent/US20120212198A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008184723A 2008-07-16 2008-07-16 半導体装置 Expired - Fee Related JP4762274B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008184723A JP4762274B2 (ja) 2008-07-16 2008-07-16 半導体装置
US12/500,015 US8253398B2 (en) 2008-07-16 2009-07-09 Semiconductor device
US13/461,918 US20120212198A1 (en) 2008-07-16 2012-05-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008184723A JP4762274B2 (ja) 2008-07-16 2008-07-16 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010227297A Division JP5259671B2 (ja) 2010-10-07 2010-10-07 半導体装置
JP2011119160A Division JP5121976B2 (ja) 2011-05-27 2011-05-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2010027709A JP2010027709A (ja) 2010-02-04
JP2010027709A5 JP2010027709A5 (https=) 2010-11-25
JP4762274B2 true JP4762274B2 (ja) 2011-08-31

Family

ID=41529748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008184723A Expired - Fee Related JP4762274B2 (ja) 2008-07-16 2008-07-16 半導体装置

Country Status (2)

Country Link
US (2) US8253398B2 (https=)
JP (1) JP4762274B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211901A (ja) * 2011-05-27 2011-10-20 Toshiba Corp 半導体装置

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JP4995873B2 (ja) * 2009-08-05 2012-08-08 株式会社東芝 半導体装置及び電源回路
JP2011100953A (ja) * 2009-11-09 2011-05-19 Toshiba Corp 半導体装置およびｄｃ−ｄｃコンバータ
JP2011198921A (ja) * 2010-03-18 2011-10-06 Toshiba Corp 静電サージ保護回路、ｄｃ−ｄｃコンバータ制御回路及びｄｃ−ｄｃコンバータ
DE102010013353A1 (de) * 2010-03-30 2011-10-06 Texas Instruments Deutschland Gmbh Schaltwandler-Steuerschaltung
JP5676961B2 (ja) * 2010-07-30 2015-02-25 スパンション エルエルシー 電源の制御回路、電子機器及び電源の制御方法
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JP5552691B2 (ja) 2010-10-28 2014-07-16 トランスフォーム・ジャパン株式会社 レギュレータ回路
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CN104969342B (zh) * 2013-03-01 2019-03-01 富士电机株式会社 半导体装置
US9048734B2 (en) * 2013-03-01 2015-06-02 Analog Devices Global Negative current protection system for low side switching converter FET
WO2014144733A1 (en) * 2013-03-15 2014-09-18 Volterra Semiconductor Corporation Voltage regulators with multiple transistors
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US9653996B2 (en) * 2013-10-28 2017-05-16 Infineon Technologies Americas Corp. Adaptive off time control scheme for semi-resonant and hybrid converters
US9825521B2 (en) * 2014-08-22 2017-11-21 Texas Instruments Incorporated Method and apparatus for inductive-kick protection clamp during discontinuous conduction mode operation
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US9537400B2 (en) * 2014-08-29 2017-01-03 Infineon Technologies Austria Ag Switching converter with dead time between switching of switches
CN104779782B (zh) * 2015-04-17 2017-06-20 华为技术有限公司 一种电压转换电路
US10193442B2 (en) 2016-02-09 2019-01-29 Faraday Semi, LLC Chip embedded power converters
US9998020B2 (en) * 2016-04-29 2018-06-12 Infineon Technologies Austria Ag Method and apparatus for efficient switching in semi-resonant power converters
US9899930B2 (en) * 2016-05-13 2018-02-20 Infineon Technologies Austria Ag Method and apparatus for phase alignment in semi-resonant power converters to avoid switching of power switches having negative current flow
US9806621B1 (en) 2016-05-13 2017-10-31 Infineon Technologies Austria Ag Method and apparatus for phase alignment in semi-resonant power converters
US10079539B2 (en) * 2017-02-01 2018-09-18 Dialog Semiconductor (Uk) Limited Power supply protection circuit
US11201543B2 (en) * 2018-11-01 2021-12-14 Texas Instruments Incorporated Methods and apparatus to improve the safe operating area of switched mode power supplies
US10504848B1 (en) 2019-02-19 2019-12-10 Faraday Semi, Inc. Chip embedded integrated voltage regulator
US10581426B1 (en) * 2019-03-11 2020-03-03 Texas Instruments Incorporated Source down power FET with integrated temperature sensor
US11069624B2 (en) 2019-04-17 2021-07-20 Faraday Semi, Inc. Electrical devices and methods of manufacture
KR102685570B1 (ko) * 2019-12-23 2024-07-16 삼성전자주식회사 주파수 제한 회로 및 이를 포함하는 dc-dc 컨버터
US11063516B1 (en) 2020-07-29 2021-07-13 Faraday Semi, Inc. Power converters with bootstrap
WO2023100509A1 (ja) * 2021-12-03 2023-06-08 ローム株式会社 スイッチング電源装置、スイッチ制御装置、車載機器、及び車両
JPWO2023100508A1 (https=) * 2021-12-03 2023-06-08
JP7674301B2 (ja) 2022-04-07 2025-05-09 株式会社デンソー スイッチング回路
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Publication number Priority date Publication date Assignee Title
JP2011211901A (ja) * 2011-05-27 2011-10-20 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
US8253398B2 (en) 2012-08-28
JP2010027709A (ja) 2010-02-04
US20120212198A1 (en) 2012-08-23
US20100013451A1 (en) 2010-01-21

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