JP4756385B2 - シリコン結晶の製造方法及びシリコンウェハの製造方法 - Google Patents

シリコン結晶の製造方法及びシリコンウェハの製造方法 Download PDF

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JP4756385B2
JP4756385B2 JP2008002751A JP2008002751A JP4756385B2 JP 4756385 B2 JP4756385 B2 JP 4756385B2 JP 2008002751 A JP2008002751 A JP 2008002751A JP 2008002751 A JP2008002751 A JP 2008002751A JP 4756385 B2 JP4756385 B2 JP 4756385B2
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silicon
silicon crystal
infrared absorption
nitrogen
crystal
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JP2008122413A (ja
JP2008122413A5 (https=
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克人 棚橋
寛 金田
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Fujitsu Ltd
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Fujitsu Ltd
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  • Crystals, And After-Treatments Of Crystals (AREA)
JP2008002751A 2008-01-10 2008-01-10 シリコン結晶の製造方法及びシリコンウェハの製造方法 Expired - Fee Related JP4756385B2 (ja)

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JP2002030311A Division JP4147453B2 (ja) 2002-02-07 2002-02-07 窒素濃度測定方法及び窒素濃度測定用比例換算係数の算出方法

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JP2010110393A Division JP4992996B2 (ja) 2010-05-12 2010-05-12 窒素濃度測定方法及び窒素濃度測定用比例換算係数の算出方法

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JP2008122413A JP2008122413A (ja) 2008-05-29
JP2008122413A5 JP2008122413A5 (https=) 2010-06-24
JP4756385B2 true JP4756385B2 (ja) 2011-08-24

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JP5842765B2 (ja) * 2012-08-10 2016-01-13 信越半導体株式会社 シリコン単結晶中の窒素濃度評価方法

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JP2582491B2 (ja) * 1991-09-04 1997-02-19 富士通株式会社 半導体結晶の熱処理方法
JPH09330966A (ja) * 1996-06-07 1997-12-22 Sumitomo Metal Ind Ltd シリコン基板中炭素の検出方法
JP3876175B2 (ja) * 2001-08-29 2007-01-31 富士通株式会社 シリコン結晶中の窒素濃度測定方法、窒素濃度測定用換算表の作成方法、シリコンウエハの製造方法、及び半導体装置の製造方法

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