JP2008122413A5 - - Google Patents
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- Publication number
- JP2008122413A5 JP2008122413A5 JP2008002751A JP2008002751A JP2008122413A5 JP 2008122413 A5 JP2008122413 A5 JP 2008122413A5 JP 2008002751 A JP2008002751 A JP 2008002751A JP 2008002751 A JP2008002751 A JP 2008002751A JP 2008122413 A5 JP2008122413 A5 JP 2008122413A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon crystal
- infrared absorption
- nitrogen
- absorption peak
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 65
- 229910052710 silicon Inorganic materials 0.000 claims 65
- 239000010703 silicon Substances 0.000 claims 65
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 50
- 239000013078 crystal Substances 0.000 claims 46
- 238000010521 absorption reaction Methods 0.000 claims 26
- 229910052757 nitrogen Inorganic materials 0.000 claims 25
- 238000000862 absorption spectrum Methods 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 19
- 238000010438 heat treatment Methods 0.000 claims 16
- 230000007547 defect Effects 0.000 claims 12
- 238000000034 method Methods 0.000 claims 10
- 238000001228 spectrum Methods 0.000 claims 4
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008002751A JP4756385B2 (ja) | 2008-01-10 | 2008-01-10 | シリコン結晶の製造方法及びシリコンウェハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008002751A JP4756385B2 (ja) | 2008-01-10 | 2008-01-10 | シリコン結晶の製造方法及びシリコンウェハの製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002030311A Division JP4147453B2 (ja) | 2002-02-07 | 2002-02-07 | 窒素濃度測定方法及び窒素濃度測定用比例換算係数の算出方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010110393A Division JP4992996B2 (ja) | 2010-05-12 | 2010-05-12 | 窒素濃度測定方法及び窒素濃度測定用比例換算係数の算出方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008122413A JP2008122413A (ja) | 2008-05-29 |
| JP2008122413A5 true JP2008122413A5 (https=) | 2010-06-24 |
| JP4756385B2 JP4756385B2 (ja) | 2011-08-24 |
Family
ID=39507269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008002751A Expired - Fee Related JP4756385B2 (ja) | 2008-01-10 | 2008-01-10 | シリコン結晶の製造方法及びシリコンウェハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4756385B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5842765B2 (ja) * | 2012-08-10 | 2016-01-13 | 信越半導体株式会社 | シリコン単結晶中の窒素濃度評価方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2582491B2 (ja) * | 1991-09-04 | 1997-02-19 | 富士通株式会社 | 半導体結晶の熱処理方法 |
| JPH09330966A (ja) * | 1996-06-07 | 1997-12-22 | Sumitomo Metal Ind Ltd | シリコン基板中炭素の検出方法 |
| JP3876175B2 (ja) * | 2001-08-29 | 2007-01-31 | 富士通株式会社 | シリコン結晶中の窒素濃度測定方法、窒素濃度測定用換算表の作成方法、シリコンウエハの製造方法、及び半導体装置の製造方法 |
-
2008
- 2008-01-10 JP JP2008002751A patent/JP4756385B2/ja not_active Expired - Fee Related
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