JP4755398B2 - 層または積層体において電気ポンピングされる少なくとも1つの領域または少なくとも1つのメサ構造またはリッジ構造を形成する方法 - Google Patents
層または積層体において電気ポンピングされる少なくとも1つの領域または少なくとも1つのメサ構造またはリッジ構造を形成する方法 Download PDFInfo
- Publication number
- JP4755398B2 JP4755398B2 JP2004074906A JP2004074906A JP4755398B2 JP 4755398 B2 JP4755398 B2 JP 4755398B2 JP 2004074906 A JP2004074906 A JP 2004074906A JP 2004074906 A JP2004074906 A JP 2004074906A JP 4755398 B2 JP4755398 B2 JP 4755398B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sacrificial layer
- laminate
- ridge
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 67
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- -1 InN Chemical compound 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 167
- 239000004065 semiconductor Substances 0.000 description 30
- 238000002161 passivation Methods 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (18)
- 層または積層体に少なくとも1つのメサ構造またはリッジ構造を形成するための方法であって、
メサ構造またはリッジ構造の側縁部にコーティングを設け、
前記コーティングを、該メサ構造またはリッジ構造を露出させた後に取り付ける方法において、
a)犠牲層を層または積層体上に取り付けるステップと、
b)マスク層を前記犠牲層上に取り付け、メサ寸法またはリッジ寸法を定義するステップと、
c)前記犠牲層および層または積層体を部分的に除去し、該層または積層体にメサ構造またはリッジ構造を形成するステップと、
d)ステップc)で露出された犠牲層の側面から該犠牲層の一部を選択的に除去し、層または積層体から見て犠牲層の上方に残留する層と比較して狭幅の犠牲層を残すステップと、
e)少なくともステップa)〜d)で形成された構造の側縁部にコーティングを取り付け、その際には、残留する犠牲層の側縁部をコーティング材料によって完全には被覆しないようにするステップと、
f)前記犠牲層を完全に除去することにより、前記層または積層体まで達する窓を前記コーティングに設けて該層または積層体から見て犠牲層の上方に残留する層を剥離し、該窓内において該層または積層体上に電気的接続金属被覆部を設けるステップと
を有することを特徴とする方法。 - 前記ステップc)において、前記犠牲層および層または積層体を部分的に異方性エッチングによって除去する、請求項1記載の方法。
- InxAlyGa1−x−yNをベースとする少なくとも1つのリッジ導波路(Ridge-Waveguide)レーザダイオードチップを製造するための方法であって、
0≦x≦1、0≦y≦1およびx+y≦1である形式の方法において、
請求項1または2記載の方法によって、幾何的なリッジ導波路構造を形成する形成することを特徴とする方法。 - リッジ導波路構造の幅は、2μm以下である、請求項3記載の方法。
- ステップc)においてドライエッチングによってレーザファセットを形成し、
コーティングは、反射加工または反射防止加工された層または積層体を有する、請求項3または4記載の方法。 - 光線放射性の積層体の側面のコーティングを有する少なくとも1つの発光ダイオードチップを製造するための方法であって、
前記光線放射性の積層体の幾何的なメサ構造またはリッジ構造と、前記コーティングとを、請求項1または2記載の方法によって形成することを特徴とする方法。 - 該発光ダイオードチップの側縁部長さは、2μm以下である、請求項6記載の方法。
- 少なくとも1つの利得導波型レーザダイオードを積層体で製造するための方法であって、
a)犠牲層を積層体上に取り付けるステップと、
b)マスク層を前記犠牲層上に取り付け、パターニングするステップと、
c)前記マスク層によってコーティングされていない、前記犠牲層の領域を部分的に除去するステップと、
d)ステップc)で露出された前記犠牲層の側面から、該犠牲層の一部を選択的に除去し、積層体から見て該犠牲層上に残留する層と比較して狭幅の犠牲層を残し、前記犠牲層によって、レーザダイオードの電気ポンピングされる領域を定義するステップと、
e)少なくともステップa)〜d)で形成された構造の側縁部にコーティングを取り付け、その際には、残留する犠牲層の側面をコーティング材料によって完全には被覆しないようにするステップと、
f)前記犠牲層を完全に除去することにより、前記層または積層体まで達する窓を前記コーティングに設けて該層または積層体から見て該犠牲層上に残留する層を剥離し、該窓内において該層または積層体上に電気的接続金属被覆部を設けるステップと
を有することを特徴とする方法。 - 前記電気ポンピングされる前記領域の幅は、2μm以下である、請求項9記載の方法。
- 前記層または積層体はIn x Al y Ga 1−x−y Nをベースとしており、ただし0≦x≦1、0≦y≦1およびx+y≦1である、請求項8または9記載の方法。
- 前記ステップc)において、前記犠牲層およびコンタクト金属層を異方性エッチングによって部分的に除去する、請求項8から10までのいずれか1項記載の方法。
- 前記犠牲層は、金属、誘電体、ポリマー、エピタキシャル成長した材料、またはこれらの材料の組み合わせから成る、請求項1から11までのいずれか1項記載の方法。
- 前記犠牲層は、金、銀、アルミニウム、パラジウム、チタン、酸化アルミニウム、窒化シリコン、ポリイミド、InN、AlN、GaP、GaAs、INPまたはこれらの材料の組み合わせから成る、請求項12記載の方法。
- ステップb)において、第1のマスク層を犠牲層上に、第2のマスク層を第1のマスク層上に取り付けて構造化する、請求項1から13までのいずれか1項記載の方法。
- 前記第1のマスク層を取り付ける前に、犠牲層上にカバー層を取り付ける、請求項1から14までのいずれか1項記載の方法。
- リッジ導体路構造の幅、側縁部長さ、ないしは電気ポンピングされる領域の幅は、1.5μm以下である、請求項3または7または9記載の方法。
- 前記コーティングに設けられる窓を、前記メサ構造またはリッジ構造のリッジ上に配置するか、または前記電気ポンピングされる領域上に配置する、請求項1または8記載の方法。
- 前記窓の幅は、前記リッジまたは前記電気ポンピングされる領域の幅より小さい、請求項17記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10312214A DE10312214B4 (de) | 2003-03-19 | 2003-03-19 | Verfahren zum Herstellen von mindestens einer Mesa- oder Stegstruktur oder von mindestens einem elektrisch gepumpten Bereich in einer Schicht oder Schichtenfolge |
DE10312214.1 | 2003-03-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004289149A JP2004289149A (ja) | 2004-10-14 |
JP4755398B2 true JP4755398B2 (ja) | 2011-08-24 |
Family
ID=32945987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004074906A Expired - Lifetime JP4755398B2 (ja) | 2003-03-19 | 2004-03-16 | 層または積層体において電気ポンピングされる少なくとも1つの領域または少なくとも1つのメサ構造またはリッジ構造を形成する方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7008810B2 (ja) |
JP (1) | JP4755398B2 (ja) |
DE (1) | DE10312214B4 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI229485B (en) * | 2004-04-06 | 2005-03-11 | Univ Nat Central | Semiconductor laser device structure and method of manufacturing the same |
DE102004037868A1 (de) * | 2004-04-30 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes und/oder -empfangendes Halbleiterbauelement und Verfahren zur strukturierten Aufbringung eines Kontakts auf einen Halbleiterkörper |
KR100818522B1 (ko) * | 2004-08-31 | 2008-03-31 | 삼성전기주식회사 | 레이저 다이오드의 제조방법 |
JP4708417B2 (ja) * | 2005-03-04 | 2011-06-22 | 富士通株式会社 | 光半導体装置とその製造方法 |
NO325047B1 (no) * | 2005-03-30 | 2008-01-21 | Intopto As | Optiske enheter ved bruk av et pentaert III-V material system |
EP1894280A4 (en) * | 2005-06-22 | 2014-03-26 | Binoptics Corp | ALGAINN-BASED LASER PRODUCED BY ETCH FACET TECHNOLOGY |
JP2007027164A (ja) * | 2005-07-12 | 2007-02-01 | Rohm Co Ltd | 半導体発光装置の製造方法及び半導体発光装置 |
US7564910B2 (en) * | 2006-04-17 | 2009-07-21 | Zoran Kostic | Method and system for communications with reduced complexity receivers |
US7598104B2 (en) | 2006-11-24 | 2009-10-06 | Agency For Science, Technology And Research | Method of forming a metal contact and passivation of a semiconductor feature |
JP4290745B2 (ja) * | 2007-03-16 | 2009-07-08 | 豊田合成株式会社 | Iii−v族半導体素子の製造方法 |
US7833695B2 (en) * | 2007-05-31 | 2010-11-16 | Corning Incorporated | Methods of fabricating metal contact structures for laser diodes using backside UV exposure |
JP2009076867A (ja) * | 2007-08-30 | 2009-04-09 | Sumitomo Electric Ind Ltd | 半導体素子の製造方法 |
DE102008015253B4 (de) * | 2008-02-26 | 2014-07-24 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Laserbauelements und Laserbauelement |
JP5298938B2 (ja) * | 2009-02-24 | 2013-09-25 | 住友電気工業株式会社 | 半導体素子の製造方法 |
JP2014515563A (ja) * | 2011-05-27 | 2014-06-30 | コーニング インコーポレイテッド | 絶縁領域をレーザダイオード構造に形成するリフトオフ処理 |
JP5786548B2 (ja) * | 2011-08-15 | 2015-09-30 | 住友電気工業株式会社 | 窒化物半導体発光素子を作製する方法 |
US10366883B2 (en) | 2014-07-30 | 2019-07-30 | Hewlett Packard Enterprise Development Lp | Hybrid multilayer device |
DE102015102300A1 (de) | 2015-02-18 | 2016-08-18 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektronischen Bauelements |
DE102015107160A1 (de) * | 2015-05-07 | 2016-11-10 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Halbleiterbauelements |
US10658177B2 (en) | 2015-09-03 | 2020-05-19 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
US10586847B2 (en) | 2016-01-15 | 2020-03-10 | Hewlett Packard Enterprise Development Lp | Multilayer device |
US11088244B2 (en) | 2016-03-30 | 2021-08-10 | Hewlett Packard Enterprise Development Lp | Devices having substrates with selective airgap regions |
US10312568B2 (en) * | 2017-08-09 | 2019-06-04 | The United States Of America, As Represented By The Secretary Of Commerce | Process for making a self-aligned waveguide |
US10381801B1 (en) * | 2018-04-26 | 2019-08-13 | Hewlett Packard Enterprise Development Lp | Device including structure over airgap |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7801181A (nl) * | 1978-02-02 | 1979-08-06 | Philips Nv | Injectielaser. |
US4751708A (en) * | 1982-03-29 | 1988-06-14 | International Business Machines Corporation | Semiconductor injection lasers |
GB2175442B (en) * | 1985-05-15 | 1989-05-24 | Stc Plc | Laser manufacture |
US5139968A (en) * | 1989-03-03 | 1992-08-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a t-shaped gate electrode |
US5316967A (en) * | 1992-01-21 | 1994-05-31 | Mitsubishi Denki Kabushiki Kaisha | Method for producing semiconductor device |
JP3936109B2 (ja) * | 1999-04-26 | 2007-06-27 | 富士通株式会社 | 半導体発光装置及びその製造方法 |
US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
US6605519B2 (en) * | 2001-05-02 | 2003-08-12 | Unaxis Usa, Inc. | Method for thin film lift-off processes using lateral extended etching masks and device |
DE10147791A1 (de) * | 2001-09-27 | 2003-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf der Basis eines Nitrid-Verbindungshalbleiters |
JP4067928B2 (ja) * | 2002-09-27 | 2008-03-26 | 株式会社東芝 | 窒化ガリウム系化合物半導体素子の製造方法及び窒化ガリウム系化合物半導体層の加工方法 |
-
2003
- 2003-03-19 DE DE10312214A patent/DE10312214B4/de not_active Expired - Lifetime
-
2004
- 2004-03-16 JP JP2004074906A patent/JP4755398B2/ja not_active Expired - Lifetime
- 2004-03-19 US US10/804,514 patent/US7008810B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE10312214B4 (de) | 2008-11-20 |
US7008810B2 (en) | 2006-03-07 |
US20040248334A1 (en) | 2004-12-09 |
JP2004289149A (ja) | 2004-10-14 |
DE10312214A1 (de) | 2004-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4755398B2 (ja) | 層または積層体において電気ポンピングされる少なくとも1つの領域または少なくとも1つのメサ構造またはリッジ構造を形成する方法 | |
JP5285835B2 (ja) | 半導体素子およびその製造方法 | |
EP1830416B1 (en) | Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices | |
US8178372B2 (en) | Method for production of a plurality of semiconductor chips, and a semiconductor component | |
JP5189734B2 (ja) | 窒化物半導体発光素子 | |
US7476903B2 (en) | Semiconductor light-emitting device | |
US11626707B2 (en) | Semiconductor laser diode | |
EP2023410A1 (en) | Integrated semiconductor light emitting device and method for manufacturing same | |
US7456039B1 (en) | Method for manufacturing semiconductor optical device | |
KR100621117B1 (ko) | 반도체 레이저 및 그 제조 방법 | |
US9692208B2 (en) | Method of manufacturing semiconductor device | |
JPH10321910A (ja) | 半導体発光素子 | |
JP3659621B2 (ja) | 窒化物系半導体レーザ装置の製造方法 | |
JP2012094564A (ja) | 半導体レーザ素子およびその製造方法 | |
US7751456B2 (en) | Method for manufacturing semiconductor optical device | |
JP2002171021A (ja) | 半導体レーザ、半導体レーザの製造方法および半導体レーザの実装方法 | |
JP3693142B2 (ja) | 半導体レーザ装置およびその製造方法 | |
TW589682B (en) | Method to produce a semiconductor-element on the basis of a nitride-compound-semiconductor | |
JPH11340569A (ja) | 半導体素子の電極形成方法およびその構造 | |
KR20050042715A (ko) | 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법 | |
US20240162686A1 (en) | Semiconductor laser | |
JP2012175052A (ja) | 半導体発光装置の製造方法 | |
KR20060025211A (ko) | 사파이어 기판 식각 방법을 이용한 수직형 전극 구조를가지는 레이저 다이오드 및 그 제조 방법 | |
WO2005057745A1 (en) | Gan-based vertical electrode laser diode utilizing the technique of sapphire etching and manufacturing method of the same. | |
CN112490848A (zh) | 一种分布式反馈激光器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070313 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100611 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100707 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101005 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101008 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101108 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101111 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101203 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101213 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110428 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110527 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140603 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4755398 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |