JP4749074B2 - Ｉｃチップの作製方法及び装置 - Google Patents

Ｉｃチップの作製方法及び装置 Download PDF

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Publication number
JP4749074B2
JP4749074B2 JP2005216756A JP2005216756A JP4749074B2 JP 4749074 B2 JP4749074 B2 JP 4749074B2 JP 2005216756 A JP2005216756 A JP 2005216756A JP 2005216756 A JP2005216756 A JP 2005216756A JP 4749074 B2 JP4749074 B2 JP 4749074B2
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Japan
Prior art keywords
sheet material
roller
thin film
integrated circuit
film integrated
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Expired - Fee Related
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JP2005216756A
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English (en)
Japanese (ja)
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JP2006066899A (ja
JP2006066899A5 (enrdf_load_stackoverflow
Inventor
了介 渡邊
直人 楠本
理 中村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005216756A priority Critical patent/JP4749074B2/ja
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Publication of JP2006066899A5 publication Critical patent/JP2006066899A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005216756A 2004-07-30 2005-07-27 Ｉｃチップの作製方法及び装置 Expired - Fee Related JP4749074B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005216756A JP4749074B2 (ja) 2004-07-30 2005-07-27 Ｉｃチップの作製方法及び装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004224789 2004-07-30
JP2004224789 2004-07-30
JP2005216756A JP4749074B2 (ja) 2004-07-30 2005-07-27 Ｉｃチップの作製方法及び装置

Publications (3)

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JP2006066899A JP2006066899A (ja) 2006-03-09
JP2006066899A5 JP2006066899A5 (enrdf_load_stackoverflow) 2008-08-14
JP4749074B2 true JP4749074B2 (ja) 2011-08-17

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JP2005216756A Expired - Fee Related JP4749074B2 (ja) 2004-07-30 2005-07-27 Ｉｃチップの作製方法及び装置

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JP (1) JP4749074B2 (enrdf_load_stackoverflow)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007108371A1 (en) * 2006-03-15 2007-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5469799B2 (ja) * 2006-03-15 2014-04-16 株式会社半導体エネルギー研究所 無線通信によりデータの交信を行う半導体装置
JP2007272296A (ja) * 2006-03-30 2007-10-18 Dainippon Printing Co Ltd 非接触データキャリアの取付け方法、非接触データキャリアの取付け装置及びそれに用いる非接触データキャリア内包体
JP5364242B2 (ja) * 2006-04-28 2013-12-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8900970B2 (en) 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
US8137417B2 (en) * 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
TWI570900B (zh) * 2006-09-29 2017-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP4459992B2 (ja) * 2006-09-29 2010-04-28 株式会社半導体エネルギー研究所 剥離装置
EP1962408B1 (en) * 2006-11-16 2015-05-27 Semiconductor Energy Laboratory Co., Ltd. Radio field intensity measurement device, and radio field intensity detector and game console using the same
JP2008134695A (ja) 2006-11-27 2008-06-12 Philtech Inc 基体データ管理システム
JP2008134694A (ja) 2006-11-27 2008-06-12 Philtech Inc Ｒｆパウダーの付加方法およびｒｆパウダー付加基体シート
JP2008135446A (ja) 2006-11-27 2008-06-12 Philtech Inc Ｒｆパウダーの製造方法
JP2008134816A (ja) 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダー粒子、ｒｆパウダー、およびｒｆパウダーの励起方法
JP2008134815A (ja) 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダーの提供方法およびｒｆパウダー含有液
JP2008135951A (ja) 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダー粒子、ｒｆパウダー、およびｒｆパウダー含有基体
WO2008081699A1 (ja) 2006-12-28 2008-07-10 Philtech Inc. 基体シート
US7968382B2 (en) 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
EP2019425A1 (en) 2007-07-27 2009-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20110027760A (ko) * 2008-06-06 2011-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20150120376A (ko) 2013-02-20 2015-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 반도체 장치, 및 박리 장치
US9676175B2 (en) * 2014-06-20 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus
JP6815096B2 (ja) * 2015-05-27 2021-01-20 株式会社半導体エネルギー研究所 剥離装置
JP6960860B2 (ja) * 2015-06-24 2021-11-05 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. トランスデューサ転写スタック
CN106469767B (zh) * 2015-08-18 2017-12-01 江苏诚睿达光电有限公司 一种基于串联滚压的有机硅树脂光转换体贴合封装led的装备系统
CN106469780B (zh) * 2015-08-18 2018-02-13 江苏诚睿达光电有限公司 一种基于串联滚压的有机硅树脂光转换体贴合封装led的工艺方法
JP2017188394A (ja) * 2016-04-08 2017-10-12 株式会社半導体エネルギー研究所 積層体の加工装置および加工方法
EP3506340B1 (en) * 2017-12-28 2020-10-21 Nexperia B.V. Bonding and indexing apparatus
KR102812326B1 (ko) * 2020-05-20 2025-05-26 삼성디스플레이 주식회사 표시 장치 제조 설비 및 이를 이용한 표시 장치 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358198A (ja) * 2000-06-13 2001-12-26 Hitachi Ltd 半導体装置の搬送方法および実装方法
JP4215998B2 (ja) * 2002-04-30 2009-01-28 リンテック株式会社 半導体ウエハの処理方法およびそのための半導体ウエハの転写装置
JP4012019B2 (ja) * 2002-08-30 2007-11-21 大日本印刷株式会社 アンテナ配線パターンの形成方法

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