JP4745420B2 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

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Publication number
JP4745420B2
JP4745420B2 JP2009121193A JP2009121193A JP4745420B2 JP 4745420 B2 JP4745420 B2 JP 4745420B2 JP 2009121193 A JP2009121193 A JP 2009121193A JP 2009121193 A JP2009121193 A JP 2009121193A JP 4745420 B2 JP4745420 B2 JP 4745420B2
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JP
Japan
Prior art keywords
bus bar
pressing mechanism
substrate
electrode layer
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009121193A
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English (en)
Japanese (ja)
Other versions
JP2010272582A (ja
Inventor
崇博 萩原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2009121193A priority Critical patent/JP4745420B2/ja
Priority to PCT/JP2010/058164 priority patent/WO2010134467A1/fr
Publication of JP2010272582A publication Critical patent/JP2010272582A/ja
Application granted granted Critical
Publication of JP4745420B2 publication Critical patent/JP4745420B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP2009121193A 2009-05-19 2009-05-19 太陽電池の製造方法 Expired - Fee Related JP4745420B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009121193A JP4745420B2 (ja) 2009-05-19 2009-05-19 太陽電池の製造方法
PCT/JP2010/058164 WO2010134467A1 (fr) 2009-05-19 2010-05-14 Procédé de fabrication de cellule solaire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009121193A JP4745420B2 (ja) 2009-05-19 2009-05-19 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JP2010272582A JP2010272582A (ja) 2010-12-02
JP4745420B2 true JP4745420B2 (ja) 2011-08-10

Family

ID=43126148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009121193A Expired - Fee Related JP4745420B2 (ja) 2009-05-19 2009-05-19 太陽電池の製造方法

Country Status (2)

Country Link
JP (1) JP4745420B2 (fr)
WO (1) WO2010134467A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150045309A (ko) * 2013-10-18 2015-04-28 엘지이노텍 주식회사 태양전지 모듈
CN109950362B (zh) * 2019-03-29 2021-02-05 苏州携创新能源科技有限公司 一种光伏组件的加工方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177131A (ja) * 1999-12-16 2001-06-29 Kanegafuchi Chem Ind Co Ltd 太陽電池用リード線自動半田付け方法及びその装置
JP2005150570A (ja) * 2003-11-19 2005-06-09 Canon Inc 光起電力素子及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177131A (ja) * 1999-12-16 2001-06-29 Kanegafuchi Chem Ind Co Ltd 太陽電池用リード線自動半田付け方法及びその装置
JP2005150570A (ja) * 2003-11-19 2005-06-09 Canon Inc 光起電力素子及びその製造方法

Also Published As

Publication number Publication date
JP2010272582A (ja) 2010-12-02
WO2010134467A1 (fr) 2010-11-25

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