JP2013225712A - 薄膜太陽電池の製造方法 - Google Patents
薄膜太陽電池の製造方法 Download PDFInfo
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000011521 glass Substances 0.000 description 14
- 239000011787 zinc oxide Substances 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 10
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- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 229910001887 tin oxide Inorganic materials 0.000 description 2
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- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
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- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】透光性絶縁基板(1)と、透光性絶縁基板上に設けられた透明導電膜(2)、光電変換層(3)および裏面電極層(4)と、裏面電極層上に設けられたバスバー(11)と、を少なくとも備え、バスバーが、導電性テープ(8)を介して裏面電極層と電気的に接続されていることにより、裏面電極層が取り出し電極として使用される、薄膜太陽電池(12)を提供する。導電性テープは、熱硬化性樹脂と導電性粒子とを含むことが好ましい。また導電性テープは異方性導電テープであることが好ましい。
【選択図】図1
Description
接着される。
本実施例では、図1に示す構成の薄膜太陽電池を作製した。透光性絶縁基板1として、厚さ1.8mm程度、サイズ560mm×925mmのガラス基板を使用し、該ガラス基板上に、透明導電膜2として、熱CVD法でSnO2(酸化錫)を成膜した。次に、YAGレーザの基本波を用いて透明導電膜2のパターニングを行なった。すなわち、レーザ光をガラス基板面から入射させることにより、透明導電膜2を短冊状に分離して、分離ライン5を形成した。
裏面電極層4として厚み150μmのアルミニウムを形成した以外は実施例1と同じ手順で試験用の太陽電池を作製した。実施例1と同様の方法で信頼性試験を実施したところ、出力変化および外観変化に問題の無い事を確認できた。
実施例1と同じ方法で裏面電極層4まで形成し、ガラス基板を30mm角程度の大きさにカットした。これに実施例1と同じ方法でバスバーを接着して引張試験用のサンプルを作製した。該サンプルの50個につき、引っ張り試験機を用い、斜め45度の引張強度を測定した。50個のサンプルの引張強度の平均値、および50個のサンプルの引張強度のばらつきとして標準偏差を算出した。引張強度の平均値およびばらつきは、後述の比較例1における平均値およびばらつきをそれぞれ1とした場合、平均値は3.1、ばらつきは0.61であった。
実施例1と同じ方法で裏面電極層4まで形成し、ガラス基板を30mm角程度の大きさにカットした。導電性テープを貼り付ける代わりに導電性ペーストである銀ペーストを厚み約10μmで塗布した他は実施例1と同様の方法でバスバーを接着して引張試験用のサンプルを作製した。該サンプルの50個につき、実施例3と同じ方法で斜め45度の引張強度を測定し、50個のサンプルの引張強度の平均値およびばらつきを算出した。
実施例4および実施例5では、導電性テープとの接続側の表面の平坦度が異なるバスバーを用い、裏面電極層とバスバーとの接着状態について評価した。
Claims (9)
- 透光性絶縁基板(1)と、前記透光性絶縁基板上に設けられた透明導電膜(2)、光電変換層(3)および裏面電極層(4)と、前記裏面電極層上に設けられたバスバー(11)と、を少なくとも備え、
前記バスバーが、導電性テープ(8)を介して前記裏面電極層と電気的に接続されていることにより、前記裏面電極層が取り出し電極として使用される、薄膜太陽電池(12)。 - 前記導電性テープ(8)が、熱硬化性樹脂と導電性粒子とを含む、請求の範囲第1項に記載の薄膜太陽電池(12)。
- 前記導電性テープ(8)が、異方性導電テープである、請求の範囲第1項に記載の薄膜太陽電池(12)。
- 前記導電性テープ(8)が点状に配置される、請求の範囲第1項に記載の薄膜太陽電池(12)。
- 前記バスバー(11)の幅よりも前記導電性テープ(8)の幅を小さくしてなる、請求の範囲第1項に記載の薄膜太陽電池(12)。
- 前記バスバー(11)は、金属箔からなる導電体(9)にメッキ(10)が施されてなる、請求の範囲第1項に記載の薄膜太陽電池(12)。
- 前記バスバー(11)の前記導電性テープ(8)との接続側の表面の平坦度が10μm以下である、請求の範囲第1項に記載の薄膜太陽電池(12)。
- 請求の範囲第1項に記載の薄膜太陽電池(12)を得るための製造方法であって、
前記透光性絶縁基板(1)上に、透明導電膜(2)、光電変換層(3)および裏面電極層(4)をこの順で形成する工程と、
前記裏面電極層上に、導電性テープ(8)を介して前記バスバー(11)を接着する接着工程と、
を含み、
前記接着を、前記導電性テープの仮圧着と前記仮圧着の後の本圧着とによって行なう、薄膜太陽電池の製造方法。 - 前記接着がパルスヒーターを用いて行なわれる、請求の範囲第8項に記載の薄膜太陽電池(12)の製造方法。
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JP2013164091A JP2013225712A (ja) | 2007-06-12 | 2013-08-07 | 薄膜太陽電池の製造方法 |
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JP2007155390 | 2007-06-12 | ||
JP2007155390 | 2007-06-12 | ||
JP2013164091A JP2013225712A (ja) | 2007-06-12 | 2013-08-07 | 薄膜太陽電池の製造方法 |
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JP2009519191A Division JPWO2008152865A1 (ja) | 2007-06-12 | 2008-04-25 | 薄膜太陽電池およびその製造方法 |
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JP2013164091A Pending JP2013225712A (ja) | 2007-06-12 | 2013-08-07 | 薄膜太陽電池の製造方法 |
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US (1) | US8735717B2 (ja) |
EP (1) | EP2164108A1 (ja) |
JP (2) | JPWO2008152865A1 (ja) |
WO (1) | WO2008152865A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010182935A (ja) * | 2009-02-06 | 2010-08-19 | Sharp Corp | 薄膜太陽電池の製造方法 |
JP4879298B2 (ja) * | 2009-06-30 | 2012-02-22 | 三洋電機株式会社 | 太陽電池モジュールの製造方法 |
EP2438632A4 (en) * | 2009-06-03 | 2014-01-22 | First Solar Inc | PHOTOVOLTAIC MODULE WITH AUTOMATIC RESTORATION |
US10128393B2 (en) | 2010-07-21 | 2018-11-13 | First Solar, Inc. | Connection assembly protection |
JP5209017B2 (ja) * | 2010-09-30 | 2013-06-12 | シャープ株式会社 | 薄膜太陽電池および薄膜太陽電池の製造方法 |
DE102011051470A1 (de) * | 2011-06-30 | 2013-01-03 | Solibro Gmbh | Verfahren zur Verschaltung eines Solarmoduls und Kontaktbändchen |
CN102299202A (zh) * | 2011-08-25 | 2011-12-28 | 浙江正泰太阳能科技有限公司 | 一种薄膜电池引线连接方法 |
CN102628164B (zh) * | 2012-04-27 | 2013-06-12 | 保定天威薄膜光伏有限公司 | 一种控制太阳能电池组件电学性能低下及外观缺陷的方法 |
KR20140064168A (ko) * | 2012-11-19 | 2014-05-28 | 삼성에스디아이 주식회사 | 리튬 이차 전지 |
WO2014139099A1 (en) * | 2013-03-13 | 2014-09-18 | China Sunergy (Nanjing) Co., Ltd. | Soldering system |
CN105339452B (zh) * | 2013-03-22 | 2018-04-24 | 3M创新有限公司 | 包括导电胶带的太阳能电池和组件及其制造和使用方法 |
JP6236896B2 (ja) * | 2013-06-11 | 2017-11-29 | 日立化成株式会社 | 太陽電池モジュール |
US9547395B2 (en) * | 2013-10-16 | 2017-01-17 | Microsoft Technology Licensing, Llc | Touch and hover sensing with conductive polarizer |
FR3087940B1 (fr) * | 2018-10-26 | 2021-07-23 | Sunpartner Technologies | Dispositif photovoltaique semi-transparent en couches minces pourvu d'un contact electrique métal/oxyde natif/métal optimisé |
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JPH07147424A (ja) * | 1993-11-25 | 1995-06-06 | Fuji Electric Co Ltd | 薄膜太陽電池モジュールの製造方法 |
JP2002314104A (ja) * | 2001-04-17 | 2002-10-25 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
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JP4069587B2 (ja) * | 1998-12-02 | 2008-04-02 | セイコーエプソン株式会社 | 半導体チップの実装方法 |
JP2000286436A (ja) * | 1999-03-31 | 2000-10-13 | Sanyo Electric Co Ltd | 太陽電池出力領域の製造方法 |
JP2004193317A (ja) * | 2002-12-11 | 2004-07-08 | Canon Inc | 太陽電池モジュールの製造方法 |
US20050115602A1 (en) * | 2003-11-28 | 2005-06-02 | Kyocera Corporation | Photo-electric conversion cell and array, and photo-electric generation system |
JP2005167161A (ja) * | 2003-12-05 | 2005-06-23 | Sharp Corp | 太陽電池モジュールの製造方法 |
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2008
- 2008-04-25 WO PCT/JP2008/058028 patent/WO2008152865A1/ja active Application Filing
- 2008-04-25 US US12/664,209 patent/US8735717B2/en not_active Expired - Fee Related
- 2008-04-25 JP JP2009519191A patent/JPWO2008152865A1/ja active Pending
- 2008-04-25 EP EP08752102A patent/EP2164108A1/en not_active Withdrawn
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US20100163106A1 (en) | 2010-07-01 |
US8735717B2 (en) | 2014-05-27 |
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