JP4740850B2 - 基板上へ所望のパターンの導電被膜を付着させる方法 - Google Patents
基板上へ所望のパターンの導電被膜を付着させる方法 Download PDFInfo
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- JP4740850B2 JP4740850B2 JP2006524826A JP2006524826A JP4740850B2 JP 4740850 B2 JP4740850 B2 JP 4740850B2 JP 2006524826 A JP2006524826 A JP 2006524826A JP 2006524826 A JP2006524826 A JP 2006524826A JP 4740850 B2 JP4740850 B2 JP 4740850B2
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
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- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
生物工学、診断法、マイクロエレクトロニクス、およびマイクロエレクトロニクスにおける多くの重要な応用は、物質の基本的なタイプの一つである金属のナノ構造を必要とする。例えば、より優れたマイクロエレクトロニクスがより小型かつより高速なコンピュータチップおよび回路基板を提供するために必要であり、金属は、回路を完成させるために必要な導電率を提供できる。金属はまた、触媒としても用いることができる。しかし、金属の処理は難しい可能性があり、ナノスケールでの操作は問題をさらにより難しくする可能性がある。多くの方法は、ミクロンレベル製造に制限される。多くの方法は、電気化学的バイアスまたは非常に高い温度の必要性により制限される。さらに、多くの方法は、インクの粘性のような付着過程の物理的な必要条件により制限される。とりわけ、アライメント、フィルム、および導線を階層化する能力、高分解能、ならびに用途の広さを提供する手段によって金属ナノ構造を製造するために、より優れた方法が必要である。
本発明は、本発明の範囲を制限せずに本願明細書において要約される、一連の態様を含む。例えば、本発明は、基板上へ所望のパターンの導電被膜を付着させる、以下の工程を含む方法を提供する:
(a) 前駆体でコーティングされたチップを使用するナノリソグラフィによって、所望のパターンで基板上へ前駆体を付着させる工程、
(b) リガンドに前駆体を接触させる工程、
(c) リガンドから前駆体に電子を移動させるために、任意で拡張線源から、十分なエネルギーを加え、これより前駆体を分解して所望のパターンの伝導性の沈殿物を形成し、このようにして直接的に導体パターンを基板上に形成させる工程。
(a) 前駆体でコーティングされたチップを使用するナノリソグラフィを使用して、所望のパターンに従って基板上へ直接的に金属前駆体およびリガンドを描画する工程、および
(b) 基板から前駆体の実質的な量を除去することなく、且つ基板から金属の実質的な量を除去することなく、任意で拡張線源から、エネルギーを加えることによって前駆体を分解し、所望のパターンの導電金属を形成させる工程。
DPN(商標)および、DIP PEN NANOLITHOGRAPHY(商標)はNanoInk社の商標であり、これに従って、これらは本明細書において使用される(例えば、DPN印刷またはDIP PEN NANOLITHOGRAPHY印刷)。DPN法および器材は、通常NanoInk社(シカゴ、IL)から入手可能であり、これには本発明のナノリソグラフィを実行するために用いることができるNScriptor(商標)が含まれる。
(1) Piner et al. Science, 29 January 1999, Vol.283, 661-663。
(2) Mirkin et al.の1999年1月7日に出願された米国特許仮出願第60/115,133号。
(3) Mirkin et al.の1999年10月4日に出願された米国特許仮出願第60/207,713号。
(4) Mirkin et al.の2000年1月5日に出願された米国特許出願第09/477,997号。
(5) Mirkin et al.の2000年5月26日に出願された米国特許仮出願第60/207,713号。
(6) Mirkin et al.の2000年5月26日に出願された米国特許仮出願第60/207,711号。
(7) Mirkin et al.の2001年5月24日に出願された米国特許出願第09/866,533号。
(8) Mirkin et al.の2002年5月30日に公開された米国特許公報第2002/0063212 A1号。
(9) Mirkin et al.の2000年1月7日に出願されたPCT出願番号PCT/US00/00319号に基づく、2000年7月13日に公開されたPCT公開番号WO 00/41213 A1。
(10) Mirkin et al.の2001年5月25日に出願されたPCT出願番号PCT/US01/17067号に基づく、2001年12月6日に公開されたPCT公開番号WO 01/91855 A1。
(11) 2001年10月2日に出願された米国特許仮出願第60/326,767号「Protein Arrays with Nanoscopic Features Generated by Dip-Pen Nanolithography」(Mirkin et al.の特許公開番号第2003/0068446号「Protein and Peptide Nanoarrays」も参照されたい)。
(12) Mirkin et al.の2001年11月30日に出願された米国特許仮出願第60/337,598号「Patterning of Nucleic Acids by Dip-Pen Nanolithography」、および2002年12月2日に出願された特許出願第10/307,515号。
(13) Mirkin et al.の2001年12月17日に出願された米国特許仮出願第60/341,614号「Patterning of Solid State Features by Dip-Pen Nanolithography、および2002年12月17日に出願された出願第10/320,721号。
(14) Eby et al.の2002年3月27日に出願された米国特許仮出願第60/367,514号「Method and Apparatus for Aligning Patterns on a Substrate、および2003年2月14日に出願された米国特許出願第10/366,717号。
(15) Cruchon-Dupeyrat et al.の2002年5月14日に出願された米国特許仮出願第60/379,755号「Nanolithographic Methods Calibration Methods」、および2003年2月28日に出願された米国特許出願第10/375,060号。
(16) 2002年8月9日に出願された米国特許仮出願第60/379,755号「Apparatus, Materials, and Methods for Fabrication and Catalysis」。
(17) Demers et al. Angew Chem. Int. Ed. Engl. 2001, 40(16), 3069-3071。
(18) Demers et al. Angew Chem. Int. Ed. Engl. 2001, 40(16), 3071-3073。
(19) Liu et al. Adv. Mater. 2002, 14, No. 3, Feb. 5, 231-234。
(20) L.M. Demers et al. 「Direct Patterning of Modified Oligonucleotides on Metals and Insulators by Dip-Pen Nanolithography」, Science, 2002, June 7, 296, 1836-1838。
(a) 金属イオンの表面誘発された還元による金のナノ構造の形成を記載する、B.W. Maynor et al.、Langmuir, 17, 2575-2578(「Au 'Ink' for AFM 'Dip-Pen' Nanolithography」)。しかし、この方法は、適当な金前駆体およびこの金と反応する基体面の慎重な選択を含み、これが工程を制限し、本発明においては必要とされない。
(b) 白金金属の付着を記載する、Y. Li et al., J. Am. Chem. Soc., 2001, 123, 2105-2106(「Electrochemical AFM 'Dip-Pen' Nanolithography」)。しかし、この方法は、チップと基板の間の外部の電気化学的バイアスの使用を含み、これが工程を制限し、本発明においては必要とされない。
以下の工程を用いるDPN印刷の使用により形成される:
(1) コーティングされたチップを使用して、所望のパターンで基板上へ、例えば金属塩などの前駆体を付着させる工程、
(2) 基板上へ適当なリガンドを適用する工程であって、ここで例えばリガンドが窒素、リン、または硫黄などの供与体原子を含む工程、
(3) 例えば放射熱によって、リガンドから前駆体に電子を移動させるのに十分なエネルギーを加え、これにより前駆体を分解して、例えば金属などの沈殿物を形成させる工程。
(1) プラズマ、紫外線、またはオゾンによる清浄化、洗浄、乾燥、送風乾燥。
(2) 例えばピラニア洗浄、塩基性エッチング(例えば、過酸化水素および水酸化アンモニウム)などの化学洗浄。
(3) インクの輸送、または粘着、または共有結合による修飾を促進するための、基板の化学または物理的な修飾(例えば、酸化シリコンに荷電した表面を与えるための塩基性処理、アミノシラン化剤またはメルカプトシラン化剤によるシラン化、化学的に反応性の官能基を担持しているポリマー)。
(4) 以降の処理工程の副作用からの保護(例えば、レジストまたは薄膜によるコーティング)。
(5) 光学顕微鏡法(例えばAIMS)、電子顕微鏡法(例えばCD SEM)、または画像法(例えばEDS、AES、UPS)、イオン画像法(例えばTOF SSIMS)、もしくは走査プローブ画像法(例えばAFM、AC AFM、NSOM、EFM...)、以下の付着後工程の章において詳述される任意の工程、およびこれらの組合せに由来する技術による基板の点検。
(a) プラズマによる清浄化、洗浄、乾燥、送風乾燥。
(b)ピラニア洗浄、塩基性エッチングなどの化学洗浄(例えば、過酸化水素および水酸化アンモニウム)。
(c) インクのコーティング、粘着、または輸送促進するまたは強化するためのプローブの化学的または物理的な修飾(例えば、窒化シリコンチップの荷電表面を与えるための塩基性処理、アミノシラン化剤またはメルカプトシラン化剤を用いるシラン化、ポリ(エチレングリコール)などの小分子またはポリマー剤を用いる非共有結合による修飾)。このような修飾は、多孔性を増加させ、またはインク送達に利用可能な表面積を改良することによって、チップ上のインクの充填を増加させるものを含む。
付着工程は、例えばDPN(商標)印刷による一つまたは複数のインクの付着または一つまたは複数のプローブを用いた付着を含むが、これらに限定されるものではない。可能なインクは、前駆体、最終的なパターンの大半を形成する化合物、触媒、溶媒、小分子もしくはポリマー担体剤、ホストマトリックス材料、または犠牲的還元剤、および上記の材料の混合物含むが、これらに限定されるものではない。これらは、層ごとの化学組成の変化を伴うかまたは伴わない、薄膜または厚い多層(多数の付着工程によって形成)として付着させてもよい。
(1) 例えば加熱ランプ、熱風送風機、またはホットプレートによる基板の加熱。
(2) 電磁放射(例えば、IR、可視光線、および紫外線)または荷電粒子(例えば、銃またはプラズマ源から引き起こされる電子イオン)による基板の照射。本処理は、光感作性剤を用いてまたは用いずに、空気中、真空中、または溶液中において、生じさせてもよい。
(3) 一つまたは複数の溶液へのパターニングされた基板の浸漬。
(4) 電気化学的還元。
(5) 化学還元。
(6) 蒸気またはガスへのパターニングされた基板の曝露。
(7) パターニングされた基板、および上記で概説される工程の全てのナノスケールの局所的等価物の音波処理。適用可能な場合、エネルギーおよび/または組成物の供給源は一つまたは複数のプローブにより提供され、このプローブは、DPNプローブと同一であっても同一でなくてもよく、これらは以下を含むがこれらに限定されるものではない:
(a) 付着した物質または周囲の基板の局所的加熱、
(b) 付着した物質または周囲の基板の局所的照射、およびこれらの全ての組合せ。
一般的方法:
本方法は、金属ナノパターンの直接的な付着を提供する。酸化化合物および還元化合物を混合することができ、チップに適用し、DPN(商標)印刷または付着によって、基板上の選択された場所に付着させることができる。インク混合物をその後加熱することができる(基板全体の加熱または局所的なプローブ誘発加熱のいずれかによる)。具体的には、金属塩および有機リガンドカクテルを使用することができる。典型的なインク処方は、適当な有機ルイス塩基またはリガンド(アミン、ホスフィン)とともに、金属塩(例えばカルボキシレート、ナイトレート、またはハロゲン化物)を含むことができる。インクの溶解性、反応性、または流動特性を改変する添加物(エチレングリコールなどの小分子、ポリエチレンオキシド、PMMA、ポリビニルカルバゾールなどポリマー)もまた使用してもよい。インク混合物の付着の後、周囲環境または不活性の環境における穏やかな加熱(例えば40〜200℃)は、塩の不均化を促進して金属沈殿物および有機揮発性物質を形成させることができる。本方法は、例えば銅含む種々の金属または金属酸化物を、穏やかな条件下で、有機不純物がほとんどない状態で付着させることを可能にする[例えば、その完全な開示が、特に付着物質に関して参照により本明細書に組み入れられる、Sharma et al.の米国特許第5,980,998号を参照されたい]。反応が起こる前にパターニングされた基板からリガンドが蒸発する場合、潜在的陥穽が生じうる。その場合、加熱前の第二工程において、塩をパターニングした基板を、リガンドに曝露してもよい。
この方法の使用の一つの具体的な実施例は、クロロホルムに溶解させたパラジウムアセチルアセトネート(1mg/マイクロリットル、通常インクがほぼ飽和した溶液が望ましい)を、酸化したシリコン、ガラス、またはアミノシラン処理されたガラス上にパターニングするために、DPN(商標)印刷または付着を使用する。点のパターニング後、ホルムアミドの液滴(1マイクロリットル)を水平基板に配置し、2分間150℃に加熱した。得られた金属パターンは、溶媒洗浄(水、アルコール、および他の無極性有機物を含む)に対して安定であったが、還元前の塩のパターニングは溶媒洗浄により除去された。図1は、ホルムアミドおよび熱による処理の前(図1a)、および処理の後(図1bおよび1c)の、AFM画像およびパターンの高さの走査を示す。
パラジウムナノパターンはDPN印刷により付着させ、蒸気還元によって金属化させた。ジメチルホルムアミドに溶解したパラジウムアセテートからなるDPNインクを、DPN法を使用して酸化シリコン上へパターニングする。使用したDPNペンは、金コーティングされた窒化シリコンプローブであった。この処理もまた、アルミニウムコーティングされたDPNプローブを用いて良好に機能した。その理由は、金コーティングされたプローブがするように、アルミニウムコーティングはカンチレバー上へ直接配置される金属塩の還元を触媒しないからである。パターニング前に、5分間のミリポア水の音波処理によって、シリコン/酸化シリコンウェーハを清浄化した。パターニングされた基板を円錐ポリエチレンチューブ中に垂直に配置し、10マイクロリットルのホルムアミド液をチューブの底に配置した。本チューブを加熱ブロックに配置し、30分間80℃で加熱して、蒸気により金属前駆体の還元を生じさせた。これにより基板上の金属パターンが保存されるので、本方法は有用である。得られる金属構造は、溶媒洗浄および他の一般的な清浄化法に対して抵抗性である。
DPNによって付着させたパラジウムナノパターンを、化学還元によって金属化させた。10%のポリエチレンオキシド(MW 10,000)を含むジナトリウムパラジウム水溶液からなるDPNインクを、DPN法を使用して、アミノシラン処理したガラス(Schott Glass company)上へパターニングした。パターニングされた基板をジメチルアミン:ボラン複合体(DMAB)0.03M溶液の溶液に曝露し、金属前駆体の伝導性金属への還元を生じさせた。得られる金属構造は、溶媒洗浄に対して抵抗性である。図2は、DMABによる処理の前(2a)および処理の後(2b、2c)の、AFM画像およびパターンの高さ走査を示す。
DPNによって付着させたプラチナナノパターンを、化学還元によって金属化させた。プラチナ四塩化物水溶液からなるDPNインクを、DPN法を使用して、アミノシアン処理されたガラス(Schott Glass company)上へパターニングした。パターニングされた基板をジメチルアミン:ボラン複合体(DMAB)0.03M溶液の溶液に曝露し、金属前駆体の伝導性金属への還元を生じさせた。還元反応は、浸漬の数秒以内に生じる。得られる金属構造は、溶媒洗浄に対して抵抗性である。図3は、DPNによって付着させ、DMABによって還元させたプラチナナノ構造の、AFMによる高さの走査を示す。
パラジウムパターンはDPNによって付着させた。パラジウムアセテートのジメチルホルムアミド溶液からなるDPNインクを、DPN法を使用して、酸化シリコン上へパターニングした。パターニング前に、基板を、80℃で15分間ピラニア溶液中で清浄化した。パターニング後、基板を、ホットプレートを使用して空気中で少なくとも1分間加熱した。加熱後、パターンをAFMによって画像化した。得られた金属構造は高いトポグラフィを示し、溶媒洗浄および他の一般的な清浄化法に対して抵抗性である。図4および図5は、所望の構造デザイン(左の図)ならびに還元前(中心の図)および熱還還元後(右の図)の実際のパターンを示す。これらのパターン、特にすでに還元されているパターンの画像法は、例えば付着に使用しない清潔なチップを使用することにより改良できる。
態様1
以下を含む、所望のパターンの導電被膜を基板上に付着させる方法:
前駆体でコーティングされたチップを使用するナノリソグラフィによって、基板上へ前駆体を所望のパターンで付着させる工程、
リガンドに前駆体を接触させる工程、
リガンドから前駆体に電子を移動させるために十分なエネルギーを加え、これにより前駆体を分解して伝導性沈殿物を所望のパターンで形成し、このようにして導体パターンを直接基板上に形成する工程。
チップがナノスコピックなチップである、態様1の態様。
チップが走査プローブ顕微鏡的チップである、態様1の態様。
チップが原子間力顕微鏡チップである、態様1の態様。
コーティングが少なくとも約80%の純度の金属を含む、態様1の態様。
コーティングが約10オングストローム未満の厚さを有する金属を含む、態様1の態様。
コーティングが少なくとも約100オングストロームの厚さを有する金属含む、態様1の態様。
前駆体がカルボキシレート、ハロゲン化物、偽ハロゲン化物(pseudohalide)、およびナイトレートからなる群より選択される塩を含む、態様1の態様。
前駆体がカルボキシレートを含む、態様1の態様。
パターンが回路を含む、態様1の態様。
リガンドがアミン、アミド、ホスフィン、スルフィド、およびエステルからなる群より選択される物質を含む、態様1の態様。
リガンドが窒素供与体、硫黄供与体、および亜リン酸供与体からなる群より選択される、態様1の態様。
沈殿物が金属を含む、態様1の態様。
沈殿物が銅、亜鉛、パラジウム、プラチナ、銀、金、カドミウム、チタン、コバルト、鉛、スズ、シリコン、およびゲルマニウムからなる群より選択される、態様1の態様。
沈殿物が電気伝導体を含む、態様1の態様。
沈殿物が電気的半導体を含む、態様1の態様。
基板が不導体を含む、態様1の態様。
基板が導体および半導体の少なくとも一つを含む、態様1の態様。
エネルギーを加える工程が熱の適用を含む、態様1の態様。
エネルギーを加える工程が赤外放射または紫外線の適用を含む、態様1の態様。
エネルギーを加える工程が振動エネルギーの適用を含む、態様1の態様。
前駆体が、カルボキシレート、ハロゲン化物、偽ハロゲン化物、ナイトレート、ならびにアミン、アミド、フォスフィン、スルフィドおよびエステルからなる群より選択される物質を含むリガンドからなる群より選択される塩を含む、態様1の態様。
沈殿物が、銅、亜鉛、パラジウム、プラチナ、銀、金、カドミウム、チタン、コバルト、鉛、スズ、シリコン、およびゲルマニウムからなる群より選択される、態様19の態様。
エネルギーを加える工程が放射熱の適用を含む、態様19の態様。
以下の工程を含む、基板上へ所望のパターンの導電金属を印刷する方法:
前駆体でコーティングされたチップを使用するナノリソグラフィを使用して、所望のパターンに従って基板上へ直接的に金属前駆体およびリガンドを描画する工程、ならびに
基板から前駆体の実質的な量を除去することなく、且つ基板から金属の実質的な量を除去することなく、エネルギーを加えることによって前駆体を分解し、所望のパターンの導電金属を形成する工程。
金属のパターンが不純物が約20重量%未満である実質的に純粋な金属を含む、態様25の態様。
分解工程が熱分解工程を含む、態様25の態様。
分解工程が約300℃未満の温度の熱分解を含む、態様25の態様。
金属が元素金属、合金、金属/金属複合材、金属セラミック複合材、および金属ポリマー複合材からなる群より選択される、態様25の態様。
以下の工程を含む、ナノリソグラフィ法:
金属前駆体をチップから基板上へ付着させてナノ構造を形成させ、その後、前駆体ナノ構造を金属付着物に変換する工程。
付着および変換が、チップと基板の間の電気バイアスを使用せずに実行される、態様30の態様。
付着および変換が、基質以外の化学薬剤を使用して実行される、態様30の態様。
チップがナノスコピックなチップである、態様30の態様。
チップが走査プローブ顕微鏡的チップである、態様30の態様。
チップがAFMチップである、態様30の態様。
付着および変換が、チップと基板の間の電気バイアスを使用せずに実行される、態様35の態様。
方法が多層を形成するために繰り返される、態様30の態様。
チップを前駆体を反応しないように適応させる、態様30の態様。
方法が、少なくとも一つのナノワイヤを他の構造に接続するために用いられる、態様30の態様。
方法が、少なくとも2本の電極を接続するために用いられる、態様30の態様。
方法が、センサを作製するために用いられる、態様30の態様。
方法が、リソグラフィテンプレートを作製するために用いられる、態様30の態様。
方法が、バイオセンサを作製するために用いられる、態様30の態様。
以下から本質的になるナノリソグラフィ法:
金属前駆体から本質的になるインク組成物をナノスコピックなチップから基質上へ付着させて、ナノ構造を形成させる工程、および
その後、ナノ構造の金属前駆体を金属形態に変換する工程。
変換が、化学薬剤を使用しない熱変換である、態様44の態様。
変換が、還元剤の使用により実行される化成的変換である、態様44の態様。
還元剤が、変換を実行するために蒸気状態で使用される、態様44の態様。
チップがAFMチップである、態様44の態様。
チップが前駆体と反応しない表面を含む、態様44の態様。
方法が、多層構造を生成させるために複数回繰り返される、態様44の態様。
基板上のミクロ構造またはナノ構造の形態のチップから基板上に金属前駆体インク組成物を付着させ、約1ミクロン以下で互いに分離した離散性の物体を有するアレイを形成する工程を含む、インクと基板の間の電気化学的なバイアスまたは反応を使用せずに印刷する方法。
前駆体から金属を形成する工程をさらに含む、態様51の態様。
離散性の物体が約500nm以下で互いに分離する、態様51の態様。
離散性の物体が約100nm以下で互いに分離する、態様51の態様。
Claims (2)
- 以下の工程を含む、基板上へ所望のパターンの導電被膜を付着させる方法:
前駆体でコーティングされたチップを使用するナノリソグラフィによって、所望のパターンで基板上へ前駆体を付着させる工程、
リガンドに前駆体を接触させる工程、
リガンドから前駆体に電子を移動させるために十分なエネルギーを加え、これにより前駆体を分解して所望のパターンの伝導性の沈殿物を形成させ、このようにして直接的に導体パターンを基板上に形成させる工程。 - 前駆体から金属を形成する工程をさらに含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/647,430 US7005378B2 (en) | 2002-08-26 | 2003-08-26 | Processes for fabricating conductive patterns using nanolithography as a patterning tool |
US10/647,430 | 2003-08-26 | ||
PCT/US2004/027631 WO2005037418A2 (en) | 2003-08-26 | 2004-08-26 | Processes for fabricating conductive patterns using nanolithography as a patterning tool |
Publications (2)
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JP2007503725A JP2007503725A (ja) | 2007-02-22 |
JP4740850B2 true JP4740850B2 (ja) | 2011-08-03 |
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JP2006524826A Expired - Fee Related JP4740850B2 (ja) | 2003-08-26 | 2004-08-26 | 基板上へ所望のパターンの導電被膜を付着させる方法 |
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US (1) | US7005378B2 (ja) |
EP (1) | EP1665360A4 (ja) |
JP (1) | JP4740850B2 (ja) |
KR (1) | KR101084395B1 (ja) |
CN (1) | CN100583401C (ja) |
CA (1) | CA2537023C (ja) |
HK (1) | HK1097954A1 (ja) |
WO (1) | WO2005037418A2 (ja) |
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JPS63274778A (ja) * | 1987-05-07 | 1988-11-11 | Ryutoku Yosomiya | 表面金属化重合体の製造方法 |
JPH04289177A (ja) * | 1990-12-03 | 1992-10-14 | Xerox Corp | 電気部品 |
JPH04247681A (ja) * | 1991-02-04 | 1992-09-03 | Fujitsu Ltd | 導体パターンの形成方法 |
JP2003027210A (ja) * | 1994-07-04 | 2003-01-29 | Seiko Epson Corp | 表面処理方法及び表示装置の製造方法 |
JPH0855756A (ja) * | 1994-08-10 | 1996-02-27 | Taiyo Yuden Co Ltd | セラミック体の導体層形成方法 |
WO2003009659A1 (en) * | 2001-07-17 | 2003-01-30 | Brunel University | Method for forming conducting layer onto substrate |
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WO2005037418A3 (en) | 2006-03-23 |
US7005378B2 (en) | 2006-02-28 |
WO2005037418A2 (en) | 2005-04-28 |
CA2537023A1 (en) | 2005-04-28 |
EP1665360A2 (en) | 2006-06-07 |
CN1875469A (zh) | 2006-12-06 |
JP2007503725A (ja) | 2007-02-22 |
KR101084395B1 (ko) | 2011-11-18 |
HK1097954A1 (en) | 2007-07-06 |
CA2537023C (en) | 2012-02-07 |
EP1665360A4 (en) | 2011-03-30 |
KR20070026297A (ko) | 2007-03-08 |
US20040127025A1 (en) | 2004-07-01 |
CN100583401C (zh) | 2010-01-20 |
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