JP4736251B2 - Film carrier and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film carrier having a double-sided wiring layer on which a semiconductor element can be mounted, and more particularly to a film carrier excellent in conduction reliability between a conduction hole and a double-sided wiring layer and a method for manufacturing the same.
[0002]
[Prior art]
Printed wiring boards are used in consumer electronics such as TVs, mobile phones, game machines, audio equipment, and VTRs, and in industrial applications such as cars, industrial robots, electronic computers, OA equipment, electronic application equipment, electrical measuring instruments, and communication equipment. Used in equipment. In recent years, as represented by robot toys, personal computers, and the like, these electronic devices are increasingly demanded for higher performance and compactness. In order to satisfy these requirements, a TAB film carrier is used in which a semiconductor chip is mounted and mounted directly on a printed wiring board.
As a film carrier that can cope with downsizing, high density, and high performance of such electronic devices, thinning of wiring, downsizing of conduction holes, downsizing of lands and pads, flexible bases, multilayering and Refinement is progressing rapidly.
[0003]
In addition, epoxy resin, phenol resin, and acrylic resin have been conventionally used as the base material, but recently, polyimide films and polyester films that are excellent in mechanical strength and heat resistance are used. Application of liquid crystal resins is progressing for the purpose of development of fluororesins and polyphenyl resins for the purpose of making them easier and environmental measures.
[0004]
A conventional film carrier configuration and manufacturing method will be described. An example of the manufacturing method of a film carrier is shown to Fig.6 (a)-(e). First, a copper foil or the like is bonded to both surfaces of the insulating film 2 via an adhesive layer to form the adhesive layer 3 and the conductor layer 4 (see FIG. 6A). Next, sprocket holes 5 are formed on both ends of the insulating film 2 by a punch press or the like (see FIG. 6B). Next, the opening 13 is formed at a predetermined position of the conductor layer 4 (see FIG. 6C). Next, the conductive layer 4 is used as a mask to irradiate a laser beam from the opening 13 to form a conduction hole 6 (see FIG. 6D). Next, the thin-film conductor layer 11 and the conductor layer 4 are used as cathode electrodes, and the electrolytic copper-plated conductor layer 12 is used to apply the thin-film conductor layer 11 and the copper plating 12 in the hole 6 for the conductive hole. Conductive hole 7 to be connected is formed (see FIG. 6E). Next, the patterning process of the conductor layers 4 on both sides is performed to form the first wiring pattern 9 and the second wiring pattern 10 to obtain the film carrier 1.
[0005]
[Problems to be solved by the invention]
The conduction holes 7 of the film carrier 1 are formed in a substrate having a thickness of 50 μm by a laser having a diameter of 80 to 150 μm and formed in a conformal plating shape by electrolytic copper plating. However, in recent years, there has been a demand for improved reliability through conduction by copper plating of conduction holes, so-called filled vias in which the hole diameter is reduced and hole filling is performed by copper plating, or soldering is performed by increasing the hole diameter to the maximum and printing. A conduction hole for embedding a resin such as a resist is formed.
[0006]
However, in filled vias with small-diameter conduction holes, the aspect ratio is high, so that the penetration of the plating solution into the conduction holes is hindered during electrolytic copper plating, resulting in poor plating or abnormal plating deposition. There was a problem that voids occurred.
By forming the shape of the conduction hole 7 in a reverse taper shape, the balance between the supply amount of copper ions and the copper plating volume in the conduction hole 7 is lost, and the copper plating thickness of the copper plating shape at the bottom of the conduction hole 7 is reduced. Disconnected.
[0007]
In addition, when the hole diameter is increased, in the hole-filling printing of large-diameter vias, there is a problem that printing defects such as bubbles are generated inside the hole-filling printing. When bubbles are present, the bubbles may burst when heat is applied during the subsequent manufacturing process or use, which may cause disconnection. In addition, the formation of the large-diameter via in the shape of the conduction hole 7 increases the amount of resin required for embedding the conduction hole in the resin, and the insulating layer is partially broken or the opening of the conduction hole becomes large. Phenomenon such as sag occurred, and there was a possibility of lowering insulation and reliability.
[0008]
When these defects occur, there is a problem that the yield rate of the film carrier is reduced. Moreover, filling a hole by plating with a large-diameter via is not practical because the plating time becomes long and the manufacturing efficiency is lowered.
[0009]
The present invention has been devised in view of the above problems, and an object thereof is to provide a film carrier excellent in connection reliability between a wiring layer and a conduction hole and a method for manufacturing the same.
[0010]
[Means for Solving the Problems]
According to the first aspect of the present invention, a wiring layer is formed on both surfaces of a long insulating film, and the thin film conductor layer and the plating conductor layer are laminated in this order, whereby the thin film is formed on the side surface and the bottom portion. through the introducing hole with the conductor layer and the plating conductor layers are laminated, the both surfaces of the wiring layer is electrically connected, blind via shape der which the through hole is the bottom wiring layer on one surface And the thin-film conductor layer and the plated conductor layer have a tapered shape in which the diameter of the conduction hole becomes narrower toward the bottom in the film carrier that does not completely fill the conductor hole , and is in the middle of the taper The film carrier is characterized in that it has a step shape of 3 to 7 steps.
[0011]
In the invention according to claim 2 of the present invention, the side surface and bottom portion of the conduction hole are covered with a conductive material formed by laminating a thin film conductor layer and a plating conductor layer in this order ,
2. The film carrier according to claim 1, wherein the conductive material layer formed by the thin-film conductor layer and the plating conductor layer of the conduction hole is embedded with a resin.
[0012]
(Delete)
[0013]
Invention of Claim 3 of this invention manufactures the film carrier which manufactures the film carrier provided with the blind via-shaped conduction | electrical_connection hole of any one of Claim 1 thru | or 2 which has the following processes at least. In the method
(A) A long insulating film having copper foil attached to both sides has a tapered shape with a diameter decreasing toward the bottom, and a step shape of 3 to 7 steps in the middle of the taper. A process of forming a conduction hole by a laser;
(B) forming a thin film conductor layer on both surfaces of the insulating film and the conduction hole;
(C) plating on the thin film conductor layer to form a plated conductor layer having a predetermined pattern;
(D) forming a resist pattern on the plated conductor layer;
(E) by developing and flash etching the resist pattern;
Forming a wiring layer by the plating conductor layer;
It is the manufacturing method of the film carrier characterized by comprising.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 2 is an xx cross-sectional view of the film carrier shown in FIG. From FIG. 2, this film carrier 1 has adhesive layers 3 on both surfaces of an insulating film 2 that can be wound up freely, and sprocket holes 5 are formed along the longitudinal direction of both ends of the film 2. Between the sprocket holes 5 at both ends in the direction, there are second wiring pattern layers 10 electrically connected to each other via the conduction holes 7 on both surfaces of the film 2, and the first wiring pattern layer 9 is formed on the opposite surface. Has a structure including a pad electrode 8 connected to the conduction hole 7 or the first wiring pattern 9.
[0015]
Here, the wiring patterns on both sides are a 9 to 18 μm thick first wiring pattern layer 9 selectively formed on one side of the insulating film 2 and 10 ± 5 μm selectively formed on the other side of the insulating film 2. A thick second wiring pattern layer 10, a thin film conductor layer 11 formed on both wiring pattern layers 9, 10, and a plating layer 12 are included. The thin film conductor layer 11 and the plating layer 12 are also formed inside the conduction hole 7.
[0016]
The thickness of the second wiring pattern layer 10 means a range of a maximum diameter of 5 to 15 μm from the viewpoint of the shape of the conduction hole 7 by the laser and the wiring strength, but the viewpoint of easily and reliably obtaining the effects of the present invention. It is preferable that it exists in the range of 5-12 micrometers in diameter.
[0017]
Here, the thickness of the first wiring pattern layer 9 and the second wiring pattern layer 10 are different, but the thickness may be within the range described above. For example, the first wiring pattern layer 9 The present invention can be implemented even if the thickness of the second wiring pattern layer 10 is unified such as 12 μm, or the thickness of the first wiring pattern layer 9 is increased as 18 μm.
[0018]
Moreover, although the film of the three-layer structure using the film which apply | coated the adhesive agent on both surfaces was used, the insulating film 2 as a base material is an epoxy resin, a phenol resin, an acrylic resin, a polyimide resin, an aramid resin, Examples include polyester resins, polyether resins, polyether ether ketone resins, liquid crystal polymer resins, fluorine resins, polyphenyl resin resins, and the like.
[0019]
Moreover, the use of a copper-clad laminate film is possible, and a film having a structure cast on a copper foil and a metallized film having a structure in which the outermost surface of the film is subjected to conductor treatment and copper plating can also be implemented. is there. For example, Espanex, Neoprex, Microlux, Iupicel N, Esperflex, Metaroyal and the like can be mentioned.
[0020]
Moreover, although the film thickness of a base film is used in the range of 25-75 micrometers, when it matches with the process of the diameter of a conduction hole especially, it will be a possible range of 25-50 micrometers. When the thickness is less than 25 μm, it is difficult to carry the interposer during manufacture or assembly. Moreover, since copper foil exists on both surfaces when it becomes thicker than 50 μm, the total thickness of the tape becomes thicker than that of single-sided T-BGA, and it cannot cope with thinning.
[0021]
Here, the shape of the conduction hole 7 of the film carrier 1 as described above will be described. As a technique for forming blind vias on a double-sided copper-clad wiring board, a laser irradiation method and a chemical etching method are used. However, the laser processing method is usually selected because of the complexity of the process and the positional accuracy of the product. The shape of this conventional laser method is shown in FIG. Usually, the laser beam irradiation diameter is kept constant in the laser processing of the resin part, so that when viewed in a cross-sectional view, it becomes a reverse taper shape in which the trapezoid is inverted.
[0022]
However, in the present invention, the conduction hole 7 is formed in the shape shown in the sectional view of FIG. 1 by adjusting the constant beam diameter. It is appropriate that the minimum diameter (bottom of the conduction hole) is 21 ± 1 μm and the number of beam irradiation diameters is 2 to 10 in consideration of workability. In consideration of the penetration of the chemical into the conduction hole 7, three or more stages are preferable, and in consideration of the volume in the via, seven stages or less are preferable.
[0023]
Next, the manufacturing method of the above film carriers is demonstrated using FIG. FIG. 3 is a schematic diagram showing the configuration of a film carrier according to an embodiment of the present invention. As shown in FIG. 3A, adhesive layers 3 are formed on both surfaces of an insulating film 2 made of a polyimide film, and The first conductor layer 15 and the second conductor layer 16 are formed by laminating and curing a copper foil having a predetermined thickness from both sides. Thereafter, the whole is cut into a predetermined width, and the copper-clad wiring board film 1 is created.
[0024]
Next, as described above, the sprocket hole 5 is punched and formed as shown in FIG.
[0025]
Next, a photosensitive resist layer is formed on the second conductor layer 16, patterned, and etched. As shown in FIG. 3C, an opening 13 is formed at a predetermined position of the second conductor layer 16. .
[0026]
Next, as shown in FIG. 3D, the second conductor wiring layer 16 in which the opening 13 is formed is used as a mask to irradiate the excimer laser beam L and conduct to the adhesive layer 3 and the insulating film 2. Hole holes 6 are formed. During laser irradiation, the diameter of the opening 13 is narrowed down for each shot to form a step-like hole 6 for a conduction hole. 3 (d) to 3 (f), the shape of the conduction hole 6 is not shown in a staircase shape for simplification, but the conduction hole 6 is a staircase as shown in FIG. 1 and FIG. It has a shape.
As the type of laser beam, a carbon dioxide gas laser, an excimer laser, a UV-YAG laser, or the like can be used. However, an excimer laser and a UV-YAG laser are preferable in view of operability for controlling the diameter of the light beam.
[0027]
Subsequently, smear on the surface of the hole 6 for the conductive hole and the surface of the insulating film 2 is removed by the potassium permanganate solution, the inner wall and the bottom of the hole 6 for the conductive hole, the first conductor layer 15 surface, and the second conductor layer 16. The surface is cleaned.
[0028]
Next, as shown in FIG. 3E, as a pretreatment for plating, the thin film conductor layer 11 is formed from the opening 13 side. Examples of the thin film layer formation include sputtering, vapor deposition, direct plating, and electroless plating.
[0029]
Next, as shown in FIG. 3 (e), a plating resist printing is performed on the first conductor layer 15, and a copper plating protective layer is formed by drying and curing.
In addition, about the method of forming a copper plating protective layer, use of the means to laminate a dry film resist and to cure by UV irradiation is also possible.
[0030]
Next, as shown in FIG. 3 (f), after forming a protective film on the first conductor layer 15, the bottom surface of the conduction hole 6 of the thin film conductor layer 11 and the first conductor layer 15 is used as a cathode electrode, By performing electrolytic copper plating, a plating layer 12 made of copper is formed on the second wiring pattern layer 10 and on the inner wall and bottom of the hole 6 for the conduction hole.
[0031]
In addition, the conductive hole 7 is formed in a stepped shape in which the diameter is reduced by overlapping the truncated cones upside down toward the bottom, so that the shape of the copper plating of the conductive hole 7 is conformal in the opening and the conductive hole. Filled plating is applied at the bottom. By making this composite plating shape, the copper plating layer in the conduction hole 7 does not contain voids (pores). Furthermore, by setting the bottom diameter of the conduction hole 7 to a diameter of 20 μm, a filled via shape was obtained, and the conduction reliability was improved. After electrolytic copper plating, the plating protective film layer is removed.
[0032]
Next, a resist solution is applied or a photosensitive dry film is applied, and exposure, development, etching, resist removal, and the like are performed, as shown in FIG. The conductor layer 16 and the plating layer 12 are patterned to form the pad electrode 8, the first wiring pattern 9, and the second wiring pattern 10.
[0033]
Next, a die attach material or a photosensitive photo solder resist is applied in a vacuum or a photosensitive dry film is applied to form a photo solder resist layer 14 to complete the production of the film carrier 1.
[0034]
In addition, since the volume which the conduction hole 7 occupies has decreased because the conduction hole 7 has a stepped shape in which the diameter is narrowed by overlapping the truncated cones toward the bottom, the volume occupied by the conduction hole 7 is reduced. This reduces the amount of the resin embedded and reduces the insulation failure of the solder resist, and the dent of the opening 15 of the conduction hole 7 is also reduced.
[0035]
In the subsequent manufacturing process, the film carrier 1 is mounted with a semiconductor chip and resin-sealed so as to be electrically connected to the wiring pattern on the surface of the second wiring pattern 10 opposite to the pad electrode 16. Thereafter, by stamping, a semiconductor device that can be mounted on a mother board or the like of an external element is obtained.
[0036]
As described above, according to the present embodiment, the conductive hole 7 is formed in a stepped shape and subjected to copper plating, so that the inside of the conductive hole 7 is a composite structure of filled and conformal plating shapes.
[0037]
For this reason, the copper plating thickness of the bottom part of the conduction | electrical_connection hole 7 becomes thin, or it does not break, and the reliability regarding the conduction | electrical_connection between the double-sided wiring layers 9 and 10 and the conduction | electrical_connection hole 7 can be improved.
[0038]
Further, as described above, according to the present embodiment, the amount of resin required for embedding in the conduction hole 7 by the resin is reduced, the insulating layer is not broken, and the insulation properties of the conduction hole 7, the wiring 9, and the wiring 10 are eliminated. Can be improved.
[0039]
(Function)
Therefore, according to the first to third aspects of the invention, a film carrier having excellent reliability of the conductive via can be obtained. Further, according to the invention described in claim 4, the volume of the conduction hole can be reduced, the amount of copper ion supplied into the conduction hole is sufficient, plating defects and voids are eliminated, and no filling failure occurs. Conductive vias can be obtained.
[0040]
For this reason, void generation at the time of copper plating in the prior art, incomplete plating, and insulation failure due to the solder resist are eliminated, and the reliability between the double-sided wiring layer and the conduction hole can be improved.
[0041]
<Example 1>
Next, an embodiment of the present invention will be described in comparison with a comparative example created by a conventional method. One embodiment of the present invention is a film carrier manufactured by the above-described manufacturing method. However, manufacturing dimensions were as follows.
Insulating film 2 ... 25 µm thick adhesive layer 3 ... 12 µm thick conduction hole 7 ... 100 µmφ
Number of stages of conduction hole 7 irradiation: 4-step copper-clad film carrier width: 48 mm width First wiring pattern layer thickness: 9 μm thickness Second wiring pattern layer thickness: 12 μm thickness
An adhesive layer 3 (12 μmt Yodogawa X12) is formed on both sides of an insulating film 2 made of a polyimide film (25 μmt Upilex S), and a copper foil (USLP) having a predetermined film thickness is bonded and cured from both sides, The wiring pattern layer 9 (first conductor layer 15) and the second wiring pattern layer 10 (second conductor layer 16) are formed. Thereafter, the whole was cut into a predetermined width to produce a film carrier 1 for a copper-clad wiring board.
[0043]
A sprocket hole 5 was formed by punching as shown in FIG.
[0044]
Next, a photosensitive resist layer is formed on the second conductor layer 16 and patterned to form a 100 μmφ opening 13 at a predetermined position of the second conductor layer 16 as shown in FIG.
[0045]
Next, as shown in FIG. 3D, the adhesive layer 3 and the insulating film 2 are irradiated with the laser light L of the UV-YAG laser using the second conductor layer 16 in which the opening 13 is formed as a mask. First, 100 μmφ is opened in the layer (see FIG. 4 a), and then the diameter of the conduction hole is stepped with 80 μmφ (see FIG. 4 b), 60 μmφ (see FIG. 4 c) and 40 μmφ (see FIG. 4 d) while adjusting the laser beam. Processing with a laser was performed to form a hole 6 for a conductive hole. Subsequently, the potassium permanganate solution is used to remove the smear on the inner wall and bottom of the hole 6 for the conductive hole and the surface of the insulating film 2 and clean the surface including the surface of the first conductor layer 15 exposed in the hole 6 for the conductive hole. Turned into.
[0046]
Next, as shown in FIG. 3E, as a pretreatment for plating, a thin film conductor layer 11 was formed from the opening 13 side using a direct plating method.
[0047]
Next, as shown in FIG.3 (f), the plating resist printing was carried out on the 1st conductor layer 15, and the copper foil protective layer was formed by performing drying and curing.
[0048]
Next, as shown in FIG. 3 (f), after forming a protective film on the first conductor layer 15, the bottom surfaces of the conduction hole 6 of the thin film conductor layer 11 and the second conductor layer 16 are used as cathode electrodes, Electrolytic copper plating 12 was applied to form a plating layer 12 made of copper on the second conductor layer 16 (about 15 μm thickness) and in the hole 6 for the conduction hole. Next, the protective film was peeled on the first conductor layer 15.
[0049]
In addition, the shape of the copper plating in the conduction hole 7 was conformal in the first and second stages of the opening, and filled in the third and fourth stages of the bottom of the conduction hole 7.
[0050]
Next, a photosensitive dry film is attached, and exposure, development, etching, resist removal, and the like are performed. As shown in FIG. 3 (f), the first conductor layer 15 and the second conductor layer 16 of the insulating film 2 are applied. , And the plating layer 12 were patterned to form the pad electrode 16, the first wiring pattern 9, and the second wiring pattern 10.
[0051]
Next, the photosensitive dry film was stuck, exposed and developed to form a photo solder resist layer 14, and the solder ball mounting portion was opened to obtain a film carrier 1 having a via structure in the present invention.
[0052]
By forming the shape of the conduction hole 7 in five stages, the supply amount of copper ions required for the plating process in the conduction hole and the copper plating volume formed in the hole 6 for the conduction hole can be balanced, and the conduction Since the bottom of the hole 6 has a filled plating structure and the opening has a composite conduction hole plating structure of a conformal plating structure, the copper plating thickness of the copper plating shape at the bottom of the conduction hole 7 is thin. The reliability concerning the conduction between the first wiring pattern 9 and the second wiring pattern 10 and the conduction hole 7 is improved.
[0053]
In addition, by forming the shape of the conduction hole 7 in four stages, the bottom of the conduction hole 7 has a filled plating structure, and the opening has a conformal plating structure of a composite conduction hole 7. The amount of resin required for embedding in the hole is reduced, the insulating layer is not broken, and the insulating properties of the conduction hole 7, the first wiring pattern 9, and the second wiring pattern 10 are improved.
[0054]
<Comparative example 1>
As a comparative example, the conventional technique was used. An adhesive layer 3 (12 μmt Yodogawa X12) is formed on both sides of an insulating film 2 made of a polyimide film (25 μmt Upilex S), and a copper foil (USLP) with a predetermined film thickness is bonded and cured from both sides. One wiring pattern layer 9 (first conductor layer 15) and second wiring pattern layer 10 (second conductor layer 16) were formed. Thereafter, the whole was cut into a predetermined width to produce a film carrier 1 for a copper-clad wiring board.
[0055]
A sprocket hole 5 was formed by punching as shown in FIG.
[0056]
Next, a photosensitive resist layer was formed on the second conductor layer 16 and patterned to form an opening 13 of 100 μmφ at a predetermined position of the second conductor layer 16 as shown in FIG. .
[0057]
Next, as shown in FIG. 3D, the adhesive layer 3 and the insulating film 2 are irradiated with the laser light L of the UV-YAG laser using the second conductor layer 16 in which the opening 13 is formed as a mask. First, laser processing was performed so that a hole was formed at 100 μmφ and the bottom of the conduction hole was 80 μmφ to form a hole 6 for a conduction hole. Subsequently, smear on the conductive hole 6 and the surface of the insulating film 2 was removed with a potassium permanganate solution, and the surface including the first conductor layer 15 in the conductive hole 6 was cleaned.
[0058]
Next, as shown in FIG. 3E, as a pretreatment for plating, a thin film conductor layer 11 was formed from the opening 13 side using a direct plating method.
[0059]
Next, as shown in FIG.3 (e), the plating resist printing was carried out on the 1st conductor layer 15, and the copper plating protective layer was formed by performing drying and curing.
[0060]
Next, as shown in FIG. 3 (f), after forming a protective film on the first conductor layer 15, the bottom surfaces of the conductive holes 6 of the thin film conductor layer 11 and the first conductor layer 15 are used as cathode electrodes, and electrolytic copper Plating was performed to form a plating layer 12 made of copper on the second conductor layer 16 (about 15 μm thick) and in the hole 6 for the conduction hole. Next, the protective film was peeled off on the first conductor layer 15.
[0061]
In addition, the shape of the copper plating of the conduction hole 7 was conformally plated.
[0062]
Next, a photosensitive dry film is attached, and exposure, development, etching, resist removal, and the like are performed. As shown in FIG. 3 (f), the first conductor layer 15 and the second conductor layer 16 of the insulating film 2 are applied. , And the plating layer 12 were patterned to form the pad electrode 8, the first wiring pattern 9, and the second wiring pattern 10.
[0063]
Next, the die attach material and the photo solder resist are applied in a vacuum, a photosensitive dry film is adhered, exposure and development are performed, the photo solder resist layer 14 and the solder ball mounting portion are opened, and the conventional product. The film carrier 1 was completed.
[0064]
By forming the shape of the conduction hole 7 in a reverse taper shape, the balance between the supply amount of copper ions and the copper plating volume in the conduction hole 7 is lost, and the copper plating thickness of the copper plating shape at the bottom of the conduction hole 7 is reduced. Disconnected.
[0065]
Further, since the shape of the conductive hole 7 is formed in a reverse taper shape, a large amount of resin is required for embedding in the conductive hole with the resin, and the insulating layer is partially broken or the opening of the conductive hole is greatly depressed. As a result, there is a possibility that the insulation and reliability may be lowered.
[0066]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a film carrier that can improve the reliability of conduction between the double-sided wiring board and the conduction hole, and a method for manufacturing the film carrier.
[Brief description of the drawings]
FIG. 1 is a side sectional view showing a via shape in the present invention.
FIG. 2 is a side sectional view according to an embodiment of the present invention.
FIG. 3 is a process cross-sectional view for explaining a film carrier manufacturing method according to an embodiment of the present invention.
FIG. 4 is a side cross-sectional view of a staircase-shaped passage hole according to an embodiment of the present invention.
FIG. 5 is a side sectional view showing a conventional via shape.
FIG. 6 is a process cross-sectional view for explaining a film carrier manufacturing method in the prior art.
FIG. 7 is a schematic diagram showing the configuration of a film carrier.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Film carrier 2 ... Insulating film 3 ... Adhesive layer 4 ... Copper foil conductor layer 5 ... Sprocket hole 6 ... Conduction hole 7 ... Conduction hole 8 ... Pad electrode 9 ... First wiring pattern 10 ... Second wiring pattern 11 ... thin film conductor layer 12 ... plated conductor layer 13 ... opening 14 ... photo solder resist layer 15 ... first conductor layer 16 ... second conductor layer

Claims (3)

A wiring layer was formed on both sides of the long insulating film, and the thin film conductor layer and the plating conductor layer were laminated in this order, whereby the thin film conductor layer and the plating conductor layer were laminated on the side surface and the bottom . through the through hole, the both surfaces of the wiring layer is electrically connected, Ri blind via shape der the conducting hole and the bottom wiring layer on one surface, and said thin film conductor layer and the plating conductor layer in the film carrier which is not completely fill the conductive hole, said through hole is the tapered diameter becomes narrower toward the bottom, and the middle three or more stages 7 stages following step shape of the tapered A film carrier characterized by Side and bottom portions of the conduction hole are covered with a conductive material formed by laminating a thin film conductor layer and a plating conductor layer in this order ,
2. The film carrier according to claim 1, wherein the conductive material layer formed by the thin-film conductor layer and the plating conductor layer of the conduction hole is embedded with a resin. In the manufacturing method of the film carrier which manufactures the film carrier provided with the conduction hole of the blind via shape according to claim 1 or 2 which has at least the following processes.
(A) A long insulating film having copper foil attached to both sides has a tapered shape with a diameter decreasing toward the bottom, and a step shape of 3 to 7 steps in the middle of the taper. A process of forming a conduction hole by a laser;
(B) forming a thin film conductor layer on both surfaces of the insulating film and the conduction hole;
(C) plating on the thin film conductor layer to form a plated conductor layer having a predetermined pattern;
(D) forming a resist pattern on the plated conductor layer;
(E) by developing and flash etching the resist pattern;
Forming a wiring layer by the plating conductor layer;
A method for producing a film carrier, comprising:

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