JP4731715B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4731715B2
JP4731715B2 JP2001118926A JP2001118926A JP4731715B2 JP 4731715 B2 JP4731715 B2 JP 4731715B2 JP 2001118926 A JP2001118926 A JP 2001118926A JP 2001118926 A JP2001118926 A JP 2001118926A JP 4731715 B2 JP4731715 B2 JP 4731715B2
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Japan
Prior art keywords
film
type impurity
gate electrode
light
conductive film
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Expired - Fee Related
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JP2001118926A
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English (en)
Japanese (ja)
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JP2002050633A (ja
JP2002050633A5 (enExample
Inventor
舜平 山崎
健司 福永
潤 小山
和隆 犬飼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001118926A priority Critical patent/JP4731715B2/ja
Publication of JP2002050633A publication Critical patent/JP2002050633A/ja
Publication of JP2002050633A5 publication Critical patent/JP2002050633A5/ja
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Publication of JP4731715B2 publication Critical patent/JP4731715B2/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP2001118926A 2000-04-19 2001-04-17 発光装置の作製方法 Expired - Fee Related JP4731715B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001118926A JP4731715B2 (ja) 2000-04-19 2001-04-17 発光装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-117436 2000-04-19
JP2000117436 2000-04-19
JP2000117436 2000-04-19
JP2001118926A JP4731715B2 (ja) 2000-04-19 2001-04-17 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002050633A JP2002050633A (ja) 2002-02-15
JP2002050633A5 JP2002050633A5 (enExample) 2008-04-24
JP4731715B2 true JP4731715B2 (ja) 2011-07-27

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JP2001118926A Expired - Fee Related JP4731715B2 (ja) 2000-04-19 2001-04-17 発光装置の作製方法

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JP (1) JP4731715B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI272556B (en) 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
KR100626007B1 (ko) 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터의 제조방법, 이박막 트랜지스터를 구비한 평판표시장치, 및 이평판표시장치의 제조방법
TWI475667B (zh) * 2005-03-28 2015-03-01 半導體能源研究所股份有限公司 記憶裝置和其製造方法
US20080006819A1 (en) * 2006-06-19 2008-01-10 3M Innovative Properties Company Moisture barrier coatings for organic light emitting diode devices
KR101800852B1 (ko) * 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6536035B2 (ja) * 2015-01-08 2019-07-03 大日本印刷株式会社 有機エレクトロルミネッセンス表示装置及びカラーフィルタ
JP2016126305A (ja) * 2015-01-08 2016-07-11 大日本印刷株式会社 有機エレクトロルミネッセンス表示装置、カラーフィルタ、及び、赤色着色層用材料
JP2019008942A (ja) * 2017-06-22 2019-01-17 住友化学株式会社 透明電極の製造方法及び電子デバイスの製造方法
CN110571226B (zh) 2019-09-05 2021-03-16 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法
CN110600517B (zh) * 2019-09-16 2021-06-01 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法
US12224354B2 (en) 2021-11-18 2025-02-11 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Oxide thin film transistor, display panel and preparation method thereof
CN114203726B (zh) * 2021-11-18 2023-08-22 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN115548029A (zh) * 2022-08-30 2022-12-30 深圳市华星光电半导体显示技术有限公司 阵列基板及显示面板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086579B2 (ja) * 1993-12-28 2000-09-11 シャープ株式会社 薄膜トランジスタの製造方法
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH1074951A (ja) * 1996-08-29 1998-03-17 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH11345978A (ja) * 1998-04-03 1999-12-14 Toshiba Corp 薄膜トランジスタおよびその製造方法、液晶表示装置
JP4731714B2 (ja) * 2000-04-17 2011-07-27 株式会社半導体エネルギー研究所 発光装置

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JP2002050633A (ja) 2002-02-15

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