JP4724625B2 - Plasma generating apparatus and work processing apparatus using the same - Google Patents

Description

  The present invention relates to a plasma generator capable of purifying or modifying the surface of a workpiece by irradiating plasma on a workpiece to be processed such as a substrate, and a workpiece processing apparatus using the plasma generator.

  For example, there is known a workpiece processing apparatus that irradiates a workpiece to be processed such as a semiconductor substrate with plasma and removes organic contaminants on the surface, surface modification, etching, thin film formation, or thin film removal. For example, in Patent Document 1, a plasma generating nozzle having concentric inner and outer electrodes is used, and a high-frequency pulse electric field is applied between both electrodes, thereby generating glow discharge instead of arc discharge. A high-density plasma is generated by rotating the processing gas from the gas supply source from the base end side to the free end side while swirling between the two conductors, and is covered by the nozzle attached to the free end. There has been disclosed a plasma processing apparatus capable of obtaining a high-density plasma under normal pressure by irradiating a processing work.

  Although the above-described conventional plasma generating nozzle has a shape suitable for generating plasma capable of generating high-density plasma under normal pressure, it is necessary to process a large-area workpiece or a plurality of workpieces collectively. There is a problem that it is not suitable. That is, when the plasma reaches the desired irradiation position of the wide workpiece, the ratio of the plasma being cooled and extinguished increases, and in order to perform plasma irradiation over the large area, the nozzle diameter is formed to be large. Must. If so, there is a problem in that microwaves with a higher electric field must be generated, which increases costs and increases noise associated with plasma generation. There is also a problem that the glow discharge varies within the large-diameter nozzle, making control difficult.

On the other hand, Patent Document 2 discloses a plasma generation space formed by surrounding one side of the strip-like electrodes arranged in parallel to each other as an electric field application electrode and the other as a ground electrode. There is disclosed a plasma processing apparatus in which a processing gas is generated by supplying a processing gas into the plasma, and a workpiece is irradiated from a slit-shaped outlet formed in the longitudinal direction of the ground electrode. According to this prior art, plasma is radiated from the slit-shaped outlet, and plasma irradiation over a wide range becomes possible.
JP 2003-197397 A Japanese Unexamined Patent Publication No. 2004-6221

  In the above-described prior art disclosed in Patent Document 2, plasma processing gas may be irradiated relatively uniformly and over a wide range. However, since glow discharge is caused by parallel plate electrodes, a high voltage is required and expensive. In addition, there is a problem that the discharge is not stable. In addition, local arc discharge is likely to occur, and in order to suppress it, it is necessary to cover at least one electrode with a dielectric, and a higher voltage is required. Therefore, Patent Document 1 is superior in generating plasma.

  An object of the present invention is to provide a plasma that has a concentric inner electrode and outer electrode, and can perform uniform plasma irradiation on a wide workpiece even when using a low-cost and easy-to-control plasma generating nozzle. It is an object of the present invention to provide a generator and a work processing apparatus using the same.

The plasma generator of the present invention includes a microwave generator for generating a microwave, and a plasma that receives the microwave from the microwave generator and generates and releases a plasma gas based on the energy of the microwave. In the plasma generating apparatus comprising the generating nozzle, the plasma generating nozzle generates a glow discharge between the inner electrode and the outer electrode arranged concentrically, and generates plasma between them. By supplying the processing gas, it is configured to radiate plasma gas from the annular outlet under normal pressure, and is attached to the tip of the plasma generating nozzle and consumed by the plasma generating nozzle by a thin member. Created with a heat capacity that increases the temperature in response to energy and introduced into the plasma from the annular outlet And chambers, and Bei obtain adapter and longitudinal-shaped air outlet communicating with the chamber, is mounted on the wall of the chamber, a temperature detecting means for detecting a temperature of said adapter, a detection result of said temperature detecting means On the basis of this, it includes control means for controlling at least one of a gas supply amount supplied to the plasma generation nozzle and a microwave power.

  According to the above configuration, in the plasma generating apparatus that can be used for workpiece processing such as substrate modification, the plasma generating nozzle is formed between the inner electrode and the outer electrode arranged concentrically. When it is configured in a shape suitable for generating plasma that emits plasma under normal pressure from an annular outlet by generating a discharge to generate plasma and supplying a processing gas between them, At the tip of the plasma generating nozzle, an adapter for converting the annular outlet into a longitudinal outlet is attached.

  Therefore, when the plasma reaches the desired irradiation position of a wide workpiece directly from the outlet, the rate of the plasma being cooled and extinguished is high. However, it is difficult for the plasma in the path in the adapter to be cooled, and it is cooled only in a slight path from the opening portion near the irradiation position until it actually reaches the irradiation position. The rate at which the plasma disappears becomes small even if it is away from the center. Accordingly, even if a small-sized plasma generating nozzle that is easy to control at low cost is used without using an unnecessarily large plasma generating nozzle, uniform plasma irradiation can be performed on the wide workpiece.

Moreover, the use of adapters to convert so the annular air outlet in the longitudinal-shaped air outlet, this adapter may have been heat capacity created by members of the thin small, corresponding to the energy consumed by the plasma generating nozzles The temperature of the adapter rises. Therefore, the adapter can be provided with temperature detection means, and the energy consumption can be estimated by measuring the temperature. Even if the adapter is attached, the plasma is turned on, turned off, or turned on. The plasma temperature and the like can be estimated.

  Therefore, based on the detection result, the control means controls at least one of the gas supply amount supplied to the plasma generation nozzle and the microwave power, so that it can be easily turned on and up to the plasma temperature. Controlled and stable plasma irradiation can also be performed.

  In the plasma generator of the present invention, the attachment portion to which the temperature detecting means is attached is formed at the tip of a thin portion extending from the free end portion of the longitudinal adapter.

  According to the above configuration, the temperature detecting means is not directly attached to the adapter that becomes high temperature by storing the plasma gas inside, but is attached via the thin wall portion, so that the detection is not affected. The temperature detecting means can be protected from excessive heat conduction.

  Furthermore, in the plasma generating apparatus of the present invention, the microwave from the microwave generating means is propagated through the waveguide, and the control means is configured to transmit the waveguide based on a detection result of the temperature detecting means. The microwave power is adjusted by adjusting the amount of protrusion of the stub tuner provided in the waveguide into the waveguide.

  According to the above configuration, the microwave is propagated through the waveguide, and in response to this, the plasma lighting / extinguishing and the temperature adjustment during lighting are performed by the stub tuner provided in the waveguide. And adjusting the microwave power applied to the plasma generating nozzle by the stub tuner based on the detection result of the temperature detecting means that can easily detect whether the plasma is on / off as described above. Thus, the plasma lighting / extinguishing and lighting temperature can be easily adjusted. In particular, when a plurality of plasma generating nozzles are provided in the waveguide, the lighting / extinguishing control and the lighting temperature can be easily adjusted by individually providing the stub tuners.

  The plasma generation apparatus of the present invention is characterized in that at least one of the plasma generation nozzle and the adapter has a heat radiating fin in the vicinity of the junction.

  According to the above configuration, since the adapter becomes high temperature by storing the plasma gas inside as described above, the heat dissipating fin for suppressing the propagation of the heat to the plasma generating nozzle side is provided with the plasma generating nozzle and the adapter. At least one of them is provided near the junction.

  Therefore, it is possible to prevent the waveguide from becoming high temperature.

  Furthermore, the plasma generator of the present invention is characterized in that the adapter further includes a heater for preheating the adapter.

  According to the above configuration, if the plasma generating nozzle is operated for a while, the adapter becomes hot due to the plasma gas stored inside as described above, and even if it is turned off once, it is easily turned on when microwaves are applied again. On the other hand, when the adapter is dissipating heat, such as when the plasma generating nozzle is started or when the operation is resumed after a pause, the plasma generating nozzle is turned on rather than the plasma is turned on alone. It becomes difficult. Therefore, by further providing a heater for improving the startability for preheating the adapter, plasma can be easily turned on even with the adapter attached, and uniform plasma irradiation can be performed immediately after lighting. This is particularly suitable for a work processing apparatus that repeatedly turns on / off such that a work to be processed is intermittently conveyed.

  In the work processing apparatus of the present invention, the microwave from the microwave generating means is propagated through the waveguide, and a plurality of the plasma generating nozzles are arranged in the longitudinal direction of the waveguide. The plasma generating apparatus is characterized by comprising transport means for transporting the workpiece in a predetermined transport direction that intersects with the arrangement direction of the plasma generating nozzles.

  According to the above configuration, a workpiece with a large area can be obtained by performing plasma irradiation from a plurality of plasma generating nozzles that can perform band-shaped plasma irradiation by attaching the adapter to the workpiece conveyed by the conveying means. Plasma irradiation can be performed continuously and uniformly on a plurality of workpieces.

  Furthermore, the workpiece processing apparatus of the present invention is characterized in that a cooling water flow path is provided at the base end of the plasma generating nozzle.

  According to said structure, the heating of the waveguide by adapter mounting as mentioned above can be prevented more reliably.

  In the work processing apparatus of the present invention, the waveguide may include at least one of a microwave that has not been received through the plasma generation nozzles and a microwave that has been reflected toward the microwave generation means. The cooling water flow path is connected to a microwave absorption pipe in the dummy load, and common cooling water is circulated.

  According to said structure, the circulating mechanism of a cooling water can be shared by the said cooling water flow path and a dummy load.

  Furthermore, the workpiece processing apparatus of the present invention further comprises a heater for preheating the adapter, and the adapter is further provided with a predetermined crossing with the longitudinal direction of the adapter. A conveying unit configured to convey a workpiece in a conveying direction; and a workpiece detecting unit configured to detect a conveyance state of the workpiece by the conveying unit, wherein the control unit corresponds to the detection result of the workpiece detecting unit, It is characterized in that at least one of the supply amount and the microwave power is controlled to control the turning on / off of plasma, and the heater is driven and controlled.

  According to said structure, when a workpiece | work is conveyed by a conveyance means, the conveyance state is detected by a workpiece | work detection means, and the said control means controls at least one of the said gas supply amount and microwave power. In addition to controlling the turning on / off of plasma, preheating by the heater is controlled. For example, the control means causes the heater to preheat in a state where the workpiece is not being conveyed, turns on the plasma generating nozzle when detecting the start of conveyance of the workpiece, and generates the plasma when detecting the completion of conveyance of the workpiece. Turn off the nozzle.

  Therefore, uniform plasma plasma irradiation can be performed while suppressing consumption of the plasma generating nozzle and the processing gas.

  As described above, the plasma generator of the present invention is a plasma generator that can be used for workpiece processing such as substrate reforming, in which the plasma generating nozzle is disposed concentrically with an outer electrode and an outer electrode. Glow discharge is generated between the electrodes and plasma is generated, and a processing gas is supplied between them to form a shape suitable for generating plasma that emits plasma gas from the annular outlet under normal pressure. When comprised, the adapter which converts the said cyclic | annular blowing outlet into a longitudinal blowing outlet is mounted | worn with the front-end | tip of the plasma generation nozzle.

Therefore, even if a small-diameter plasma generation nozzle that is easy to control at low cost is used without using an excessively large plasma generation nozzle, uniform plasma irradiation can be performed on a wide workpiece. Moreover, the use of adapters to convert so the annular air outlet in the longitudinal-shaped air outlet, this adapter may have been heat capacity created by members of the thin small, corresponding to the energy consumed by the plasma generating nozzles Focusing on the rise in temperature of the adapter, the adapter is provided with temperature detection means, and the energy consumption is estimated by measuring the temperature, and the adapter is supplied to the plasma generating nozzle based on the detection result. By controlling at least one of the gas supply amount and the microwave power, the light can be easily turned on, and stable plasma irradiation can be performed by controlling the plasma temperature.

  In the work processing apparatus of the present invention, as described above, the microwaves from the microwave generating means are propagated through the waveguide, and a plurality of the plasma generating nozzles are arranged in the longitudinal direction of the waveguide. The plasma generating apparatus is provided with transport means for transporting the workpiece in a predetermined transport direction that intersects with the direction in which the plasma generating nozzles are arranged.

  Therefore, by irradiating the workpiece conveyed by the conveying means with the plasma from a plurality of plasma generating nozzles that can be attached with the adapter and performing band-shaped plasma irradiation, the workpiece can be applied to a large area workpiece or a plurality of workpieces. Plasma irradiation can be performed continuously and uniformly.

[Embodiment 1]
FIG. 1 is a perspective view showing an overall configuration of a work processing apparatus S according to an embodiment of the present invention. The workpiece processing apparatus S includes a plasma generation unit PU (plasma generation apparatus) that generates plasma and irradiates the workpiece W, which is an object to be processed, with the plasma, and a predetermined route that passes the workpiece W through the plasma irradiation region. It is comprised from the conveyance means C which conveys. 2 is a perspective view of the plasma generation unit PU in which the line-of-sight direction is different from that in FIG. 1, and FIG. 3 is a partially transparent side view. 1 to 3, the XX direction is the front-rear direction, the Y-Y direction is the left-right direction, the ZZ direction is the up-down direction, the -X direction is the front direction, the + X direction is the rear direction,- Y will be described as a left direction, + Y direction as a right direction, -Z direction as a downward direction, and + Z direction as an upward direction.

  The plasma generation unit PU is a unit capable of generating plasma at normal temperature and pressure using microwaves. In general, the waveguide 10 propagates microwaves, and one end side of the waveguide 10 ( Microwave generator 20 arranged on the left side to generate microwaves of a predetermined wavelength, plasma generator 30 provided on waveguide 10, and arranged on the other end side (right side) of waveguide 10 to reflect microwaves The sliding short 40 to be performed, the circulator 50 for separating the reflected microwaves from the microwaves emitted to the waveguide 10 so as not to return to the microwave generator 20, and the dummy load 60 for absorbing the reflected microwaves separated by the circulator 50. In addition, a stub tuner 70 for matching impedance between the waveguide 10 and the plasma generation nozzle 31 is provided. The conveying means C includes a conveying roller 80 that is rotationally driven by a driving means (not shown). In the present embodiment, an example in which a flat workpiece W is conveyed by the conveying means C is shown.

  The waveguide 10 is made of a nonmagnetic metal such as aluminum, has a long tubular shape with a rectangular cross section, and propagates the microwave generated by the microwave generator 20 toward the plasma generator 30 in the longitudinal direction thereof. Is. The waveguide 10 is composed of a connected body in which a plurality of divided waveguide pieces are connected to each other by flange portions, and the first conductor on which the microwave generator 20 is mounted in order from one end side. The wave tube piece 11, the second waveguide piece 12 to which the stub tuner 70 is assembled, and the third waveguide piece 13 provided with the plasma generator 30 are connected. A circulator 50 is interposed between the first waveguide piece 11 and the second waveguide piece 12, and a sliding short 40 is connected to the other end side of the third waveguide piece 13.

  The first waveguide piece 11, the second waveguide piece 12 and the third waveguide piece 13 are each formed in a rectangular tube shape using an upper plate, a lower plate and two side plates made of a metal flat plate, respectively. And flange plates are attached to both ends thereof. In addition, you may make it use the rectangular waveguide piece formed by extrusion molding, the bending process of a plate-shaped member, etc., or a non-dividing type | mold waveguide irrespective of the assembly of such a flat plate. Further, not only a nonmagnetic metal but also a waveguide can be constituted by various members having a waveguide action.

  The microwave generator 20 includes, for example, an apparatus main body portion 21 including a microwave generation source such as a magnetron that generates a microwave of 2.45 GHz, and the microwave generated by the apparatus main body portion 21 inside the waveguide 10. And a microwave transmission antenna 22 that emits light to the outside. In the plasma generation unit PU according to the present embodiment, for example, a continuously variable microwave generator 20 that can output microwave energy of 1 W to 3 kW is preferably used.

  As shown in FIG. 3, the microwave generation device 20 has a configuration in which a microwave transmission antenna 22 protrudes from the device main body 21, and is fixed in a mode of being placed on the first waveguide piece 11. Has been. Specifically, the apparatus main body 21 is placed on the upper surface plate 11U of the first waveguide piece 11, and the microwave transmitting antenna 22 is inside the first waveguide piece 11 through the through hole 111 formed in the upper surface plate 11U. The waveguide space 110 is fixed so as to protrude. With this configuration, the microwave of 2.45 GHz, for example, emitted from the microwave transmission antenna 22 is directed from one end side (left side) to the other end side (right side) by the waveguide 10. Propagated.

The plasma generating unit 30 includes a plurality of plasmas arranged on the lower surface plate 13B of the third waveguide piece 13 (a surface facing the workpiece to be processed) spaced apart from each other in the microwave propagation direction (left-right direction). The generation nozzle 31 and the upper surface plate 13U of the third waveguide piece 13 are configured to include stub tuner units 70X provided corresponding to the respective plasma generation nozzles 31. The width of the plasma generation unit 30, that is, the arrangement width in the left-right direction of the eight plasma generation nozzles 31 is a width that substantially matches the size t in the width direction orthogonal to the conveying direction of the flat workpiece W. Thereby, the plasma processing can be performed on the entire surface of the workpiece W (the surface facing the lower surface plate 13B) while the workpiece W is being conveyed by the conveying roller 80. Note that it is desirable that the arrangement interval of the plasma generating nozzles 31 is determined according to the wavelength λ _{G of the} microwave propagating in the waveguide 10. For example, it is desirable to arrange the plasma generating nozzles 31 at a ½ pitch and a ¼ pitch of the wavelength λ _{G. When} a microwave of 2.45 GHz is used, since λ _G = 230 mm, 115 mm (λ _G / 2) The plasma generating nozzles 31 may be arranged at a pitch or 57.5 mm (λ _G / 4) pitch.

  The sliding short 40 is provided for optimizing the coupling state between the central conductor 32 provided in each plasma generation nozzle 31 and the microwave propagated inside the waveguide 10. The third wave guide piece 13 is connected to the right end of the third waveguide piece 13 so that the standing wave pattern can be adjusted by changing the microwave reflection position. Therefore, when a standing wave is not used, a dummy load having a radio wave absorption function is attached instead of the sliding short 40. The sliding short 40 includes, for example, a cylindrical reflection block inside, and the standing wave pattern in the waveguide 10 is optimized by sliding the reflection block in the left-right direction.

  The circulator 50 is composed of, for example, a waveguide-type three-port circulator with a built-in ferrite column. Of the microwaves once propagated toward the plasma generator 30, the plasma generator 30 returns without being consumed. The incoming reflected microwave is directed to the dummy load 60 without returning to the microwave generator 20. By arranging such a circulator 50, the microwave generator 20 is prevented from being overheated by the reflected microwave.

  The dummy load 60 is a water-cooled radio wave absorber that absorbs the above-described reflected microwave and converts it into heat. The dummy load 60 is provided with a cooling water circulation port 61 for circulating cooling water therein so that heat generated by heat conversion of the reflected microwaves is exchanged with the cooling water. It has become.

  The stub tuner 70 is for impedance matching between the waveguide 10 and the plasma generation nozzle 31, and has three stub tuners arranged in series on the upper surface plate 12 U of the second waveguide piece 12 at a predetermined interval. Units 70A to 70C are provided. FIG. 4 is a perspective side view showing an installation state of the stub tuner 70. As shown in the figure, the three stub tuner units 70 </ b> A to 70 </ b> C have the same structure, and a stub 71 protruding into the waveguide space 120 of the second waveguide piece 12 and an operation rod 72 directly connected to the stub 71. And a moving mechanism 73 for moving the stub 71 up and down in the vertical direction, and an outer jacket 74 for holding these mechanisms.

  In the stub 71 provided in each of the stub tuner units 70 </ b> A to 70 </ b> C, the protruding length into the waveguide space 120 can be adjusted independently by each operation rod 72. The protruding lengths of these stubs 71 are determined by searching for a point where the power consumption by the central conductor 32 is maximized (a point where the reflected microwave is minimized) while monitoring the microwave power. Such impedance matching is executed in conjunction with the sliding short 40 as necessary. The operation of the stub tuner 70 is automated using a stepping motor or the like as will be described later.

  The conveyance means C includes a plurality of conveyance rollers 80 arranged along a predetermined conveyance path, and the conveyance roller 80 is driven by a driving means (not shown), so that the workpiece W to be processed is generated by the plasma generation. It is conveyed via the section 30. Here, examples of the workpiece W to be processed include a flat substrate such as a plasma display panel and a semiconductor substrate, a circuit substrate on which electronic components are mounted, and the like. Also, parts or assembled parts that are not flat-shaped can be processed, and in this case, a belt conveyor or the like may be employed instead of the conveying roller.

  It should be noted that in this embodiment, an adapter 32 is attached to the tip of each plasma generating nozzle 31. FIG. 5 is an enlarged cross-sectional view showing the adapter 38 from the plasma generating nozzle 31, FIG. 6 is an exploded perspective view of the adapter 38, and FIG. 7 shows the mounting portion of the third waveguide piece 13. It is a perspective view which expands and shows. The plasma generating nozzle 31 includes a central conductor 32 (inner electrode), a nozzle body 33 (outer electrode), a nozzle holder 34, and a seal member 35.

  The center conductor 32 is made of a highly conductive metal such as copper, aluminum, or brass, and is made of a rod-like member having a diameter of about 1 to 5 mm. The upper end 321 side of the center conductor 32 is a lower plate 13B of the third waveguide piece 13. While vertically penetrating and projecting into the waveguide space 130 by a predetermined length (this projecting portion is referred to as a receiving antenna unit 320), the lower end 322 is substantially flush with the lower end edge 331 of the nozzle body 33. Is arranged. Microwave energy (microwave power) is applied to the central conductor 32 when the receiving antenna unit 320 receives the microwave propagating through the waveguide 10. The central conductor 32 is held by a seal member 35 at a substantially intermediate portion in the length direction.

  The nozzle body 33 is a cylindrical body made of a highly conductive metal and having a cylindrical space 332 that houses the central conductor 32. The nozzle holder 34 is also made of a highly conductive metal, and has a relatively large-diameter lower holding space 341 that holds the nozzle body 33 and a relatively small-diameter upper holding space 342 that holds the seal member 35. It is a state. On the other hand, the seal member 35 is made of a heat-resistant resin material such as Teflon (registered trademark) or an insulating member such as ceramic, and has a holding hole 351 for holding the central conductor 32 fixedly on its central axis. It consists of a body.

  The nozzle body 33 is formed in an annularly projecting manner from the upper side, an upper body portion 33U fitted in the lower holding space 341 of the nozzle holder 34, an annular recess 33S for holding a gas seal ring 337 described later. A flange portion 33F and a lower body portion 33B protruding from the nozzle holder 34 are provided. In addition, a communication hole 333 for supplying a predetermined processing gas to the cylindrical space 332 is formed in the upper body portion 33U.

  The nozzle body 33 functions as an external conductor disposed around the central conductor 32. The central conductor 32 is a cylindrical space with a predetermined annular space H (insulation interval) secured around it. It is inserted on the central axis of 332. The nozzle body 33 has a nozzle holder such that the outer peripheral portion of the upper body portion 33U is in contact with the inner peripheral wall of the lower holding space 341 of the nozzle holder 34 and the upper end surface of the flange portion 33F is in contact with the lower end edge 343 of the nozzle holder 34. 34 is fitted. The nozzle body 33 is preferably attached to the nozzle holder 34 with a detachable fixing structure using, for example, a plunger or a set screw.

  The nozzle holder 34 includes an upper body portion 34U (corresponding approximately to the position of the upper holding space 342) and a lower surface plate 13B that are closely fitted in a through hole 131 formed in the lower surface plate 13B of the third waveguide piece 13. And a lower body portion 34B (substantially corresponding to the position of the lower holding space 341). On the lower surface plate 13B of the third waveguide piece 13, a cooling pipe 39 that radiates heat in contact with the lower body portion 34B is laid.

  Further, a gas supply hole 344 for supplying a processing gas to the annular space H is formed in the outer periphery of the lower body portion 34B. Although not shown, a pipe joint or the like for connecting a terminal portion of a gas supply pipe for supplying a predetermined processing gas is attached to the gas supply hole 344. The gas supply hole 344 and the communication hole 333 of the nozzle body 33 are set so that they are in communication with each other when the nozzle body 33 is fitted into the nozzle holder 34 at a fixed position. A gas seal ring 337 is interposed between the nozzle body 33 and the nozzle holder 34 in order to suppress gas leakage from the abutting portion between the gas supply hole 344 and the communication hole 333.

  A plurality of the gas supply holes 344 and the communication holes 333 may be perforated at equal intervals in the circumferential direction, and are not perforated in the radial direction toward the center. The gas may be perforated in the tangential direction of the outer peripheral surface of the cylindrical space 332 so as to swirl the gas. Further, the gas supply hole 344 and the communication hole 333 are not perpendicular to the central conductor 32, and may be formed obliquely from the upper end 321 side to the lower end 322 side in order to improve the flow of the processing gas. Good.

  The seal member 35 has a lower end edge 352 in contact with an upper end edge 334 of the nozzle body 33 and an upper end edge 353 in contact with an upper end locking portion 345 of the nozzle holder 34 in the upper holding space 342 of the nozzle holder 34. Is retained. That is, the upper holding space 342 is assembled so that the seal member 35 supporting the central conductor 32 is fitted and the lower end edge 352 of the nozzle body 33 is pressed by the upper end edge 334. is there.

  As a result of the plasma generation nozzle 31 being configured as described above, the nozzle body 33, the nozzle holder 34, and the third waveguide piece 13 (waveguide 10) are in a conductive state (the same potential), Since the central conductor 32 is supported by the insulating seal member 35, it is electrically insulated from these members. Therefore, when the microwave is received by the receiving antenna unit 320 of the central conductor 32 and the microwave power is supplied to the central conductor 32 in a state where the waveguide 10 is at the ground potential, the lower end 322 and the nozzle An electric field concentration portion is formed in the vicinity of the lower end edge 331 of the main body 33.

  In this state, when an oxygen-based processing gas such as oxygen gas or air is supplied from the gas supply hole 344 to the annular space H, the processing gas is excited by the microwave power and the lower end of the central conductor 32 is excited. Plasma (ionized gas) is generated near the portion 322. Although this plasma has an electron temperature of tens of thousands of degrees, the gas temperature is a reactive plasma that is close to the outside temperature (a plasma in which the electron temperature indicated by electrons is extremely high compared to the gas temperature indicated by neutral molecules). It is a plasma generated under normal pressure.

  The processing gas thus converted into plasma is radiated from the lower edge 331 of the nozzle body 33 as a plume by the gas flow provided from the gas supply hole 344. This plume contains radicals. For example, when an oxygen-based gas is used as a processing gas, oxygen radicals are generated, and a plume having an action of decomposing / removing organic matter, a resist removing action, and the like can be obtained. In the plasma generation unit PU according to the present embodiment, since a plurality of plasma generation nozzles 31 are arranged, it is possible to generate a line-shaped plume extending in the left-right direction.

  Incidentally, when an inert gas such as argon gas or nitrogen gas is used as the processing gas, the surface cleaning and surface modification of various substrates can be performed. Further, if a compound gas containing fluorine is used, the substrate surface can be modified to a water-repellent surface, and using a compound gas containing a hydrophilic group can modify the substrate surface to a hydrophilic surface. Furthermore, if a compound gas containing a metal element is used, a metal thin film layer can be formed on the substrate.

  The adapter 38 is generally covered with a mounting portion 381 into which the lower body portion 33B of the nozzle body 33 is fitted, a plasma chamber 382 extending horizontally from the tip of the mounting portion 381, and the plasma chamber 382. And a pair of slit plates 383 and 384. The plasma chamber 382 from the mounting portion 381 is formed by machining or casting, and is integrally formed. The slit plates 383 and 384 are formed by cutting or punching.

  The attachment portion 381 is formed in a cylindrical shape, and when the lower body portion 33B is fitted into the cylinder, and the attachment screw 385 is screwed into the screw hole 3811 formed in the side portion, the tip 3851 thereof. Is fitted into a recess 33B1 formed on the outer peripheral surface of the lower body portion 33B, thereby preventing the removal. The slit plates 383 and 384 are attached to the bottom surface of the plasma chamber 382 by a plurality of countersunk screws 386.

  The plasma chamber 382 includes a pair of chamber portions 3821 and 3822 extending away from the lower end 3812 of the attachment portion 381, and a longitudinal groove 3823 that is recessed upwardly across the chamber portions 3821 and 3822. Are formed, and a substantially central portion of the concave groove 3823 is a large-diameter opening 3824 communicating with the inner peripheral portion of the mounting portion 381.

  By inserting the slit plates 383 and 384 into the concave grooves 3823 formed in this way, the space surrounded by the slit plates 383 and 384 and the chamber portions 3821 and 3822 becomes a chamber, and the cylinder of the nozzle body 33 is formed. The plasma-treated gas radiated from the space 332 propagates in the concave groove 3823 from the attachment portion 381 through the opening 3824 and is radiated in a strip shape from the outlet 387 between the slit plates 383 and 384. The width W0 of the outlet 387 is sufficiently larger than the diameter φ of the cylindrical space 332 of the nozzle body 33, for example, W0 = 70 mm for φ = 5 mm.

  Therefore, a glow discharge is generated between the central conductor 32 as the inner electrode and the nozzle body 33 as the outer electrode arranged concentrically to generate plasma, and a processing gas is supplied between them. Thus, in the plasma generating nozzle 31 that radiates plasma gas from the annular outlet under normal pressure, as shown in FIG. 8, when the plasma irradiation is performed on the desired irradiation position P of the wide workpiece W, the reference symbol L1 In the case of reaching directly from the outlet (cylindrical space 332 of the nozzle main body 33), the rate at which the plasma is cooled and disappears in most of the path L1 increases. On the other hand, by installing this adapter 38 that converts the annular outlet into a longitudinal outlet 387, the adapter 38 that becomes hot even in the same path length up to the irradiation position P can be obtained. In the passing path L21, the plasma is difficult to be cooled, and the cooling is performed only in the slight path L22 that exits from the opening portion nearest to the irradiation position P and actually reaches the irradiation position. Even if it is away from 33, the rate at which the plasma disappears is small. Accordingly, even if a small-sized plasma generating nozzle that is easy to control at low cost is used without using an unnecessarily large plasma generating nozzle, uniform plasma irradiation can be performed on the wide workpiece W.

In addition, it should be noted that when the adapter 38 that converts the annular outlet to the longitudinal outlet 387 is used, the adapter 38 is electrically connected to the plasma generating nozzle 31 from the nozzle body 33 via the nozzle holder 34. The plasma chamber 382 is filled with high-temperature plasma gas when the plasma is turned on, whereas the adapter 38 is a thin-walled member. When the heat capacity is small, the temperature of the adapter rises corresponding to the energy consumed by the plasma generating nozzle 31. Therefore, the temperature sensor 36 is provided in the adapter, and the consumed energy can be estimated by measuring the temperature. Even if the adapter 38 is attached, that is, even if the tip of the plasma generating nozzle 31 is not directly visible, It is to estimate the plasma temperature or the like when the plasma is on or off, or even when the plasma is on. Based on the detection result, the amount of gas supplied to each plasma generating nozzle 31 is controlled, and the wave guide of the stub 71 of the stub tuner unit 70X provided corresponding to each plasma generating nozzle 31 is provided. As the projecting length into the space 130 is adjusted and the projecting length becomes longer, the energy consumed by the corresponding plasma generation nozzle 31 is reduced. Thus, the control of the microwave power from the control of turning on / off the plasma is described in detail later. To be done.

  By adjusting the microwave power applied to each plasma generating nozzle 31 by the stub tuner unit 70X, it is possible to easily adjust the plasma lighting / extinguishing and lighting temperature. In particular, when a plurality of plasma generating nozzles 31 are provided in the waveguide 10, it is possible to easily adjust the lighting / light-off control and the lighting temperature by providing the stub tuner units 70 </ b> X individually. Can do. The stub tuner unit 70X is configured in the same manner as the stub tuner units 70A to 70C described above, and detailed description thereof is omitted, but the protruding amount of the stub 71 can be adjusted using the stepping motor or the like. Yes. The stepping motor may be provided in each of the stub tuner units 70A to 70C and 70X, or may be provided in common and the protrusion amount may be individually adjusted by a transmission mechanism such as a gear.

  Here, the attachment portion 388 to which the temperature sensor 36 is attached is formed at the tip of a thin portion 389 extending from the free end portion of the longitudinal adapter 38. Therefore, the temperature sensor 36 is not directly attached to the adapter 38 that becomes high temperature by storing the plasma gas inside as described above, but is attached via the thin portion 389, so that detection is not affected. In range, the temperature sensor 36 can be protected from excessive heat conduction.

  The temperature sensor 36 can be realized by a thermistor, a thermocouple, an infrared sensor or the like, and the mounting portion 388 is bonded, screwed, or a mounting hole is formed in the mounting portion 388, and the mounting hole 388 It can be installed by fitting it in. In the case where the temperature sensor 36 has heat resistance, the dedicated mounting portion 388 is not provided from the thin portion 389 but may be provided on an arbitrary surface of the plasma chamber 382 or in the plasma chamber 382.

  Furthermore, it should be noted that the adapter 38 is provided with a heater 37 for preheating the adapter 38. The heater 37 is composed of a heating resistor, a wire heater, and the like, and generates heat when a voltage is applied between lead wires 371 drawn from both ends thereof. This is because, if the plasma generating nozzle 31 is operated for a while (for example, about 5 minutes), the adapter 38 becomes high temperature due to the plasma gas stored inside as described above, and even if the adapter 38 is turned off once, the adapter again emits the microwave. In contrast, when the plasma generating nozzle 31 is in a heat dissipating state such as when the plasma generating nozzle 31 is started up or when the operation is resumed after the operation is stopped for a while, the plasma generating nozzle 31 alone is used. This is because it is more difficult to turn on the plasma than to turn on the plasma. Therefore, by providing this heater 37 for improving startability in the adapter 38, plasma can be easily turned on even with the adapter 38 attached, and uniform plasma irradiation can be performed immediately after lighting. it can. This is particularly suitable for the workpiece processing apparatus S that repeatedly turns on / off so that the workpiece W to be processed is intermittently conveyed.

  Note that the attachment portion 381 from the lower body portion 33B of the nozzle body 33 is formed to be thin, whereby heat conduction is efficiently performed from the plasma generating nozzle 31 to the adapter 38. The deficient amount of heat can be compensated for by heating the heater 37 as described above.

  Also, it should be noted that, as described above, the adapter 38 is heated by storing the plasma gas therein, and therefore, in order to suppress the propagation of the heat to the plasma generation nozzle 31 side, In at least one of the adapters 38 (both in FIG. 5 and FIG. 6), heat dissipating fins 339 and 3819 are provided in the vicinity of the joint portion. Therefore, together with the cooling pipe 39, the waveguide 10 can be prevented from becoming high temperature, and problems such as deterioration of the sealing member 35 due to overheating of the plasma generating nozzle 31 can be prevented.

  Furthermore, by providing the cooling pipe 39 which is a cooling water flow path, it is possible to obtain a higher cooling effect than air cooling by a fan or the like. As a result, the central conductor 32 can be prevented from loosening due to deterioration of the seal member 35 and can be stably lit, and heat from the plasma generating nozzle 31 is transmitted to the waveguide 10 at low temperatures to cause condensation. Can be prevented. In addition, the cooling by the fan may cause dust or the like to be wound up, but does not cause such a problem. Furthermore, the cooling pipe 39 is connected to the cooling water circulation port 61 which is the outlet of the microwave absorption pipe in the dummy load 60 by the pipe line 391, thereby circulating the common cooling water and circulating the cooling water. The mechanism can be shared.

  Further, when the work processing apparatus S is configured by providing the plasma generating apparatus PU with the conveying means C, the microwave is propagated from the microwave generating apparatus 20 to the plasma generating nozzle 31 through the waveguide 10 and guided there. When a plurality of the plasma generating nozzles 31 are attached to the wave tube in the longitudinal direction D2 of the waveguide 10 which is orthogonal to the conveyance direction D1 of the workpiece W, as shown in an enlarged view in FIG. The axis D3 of the adapter 38 is attached to be inclined with a predetermined angle α with respect to the arrangement direction of the plasma generating nozzles 31 (longitudinal direction of the waveguide 10).

  By configuring in this way, it is possible to prevent the plasma blown from the longitudinal end portion of the longitudinal blowout port 387 from colliding with each other between the adjacent adapters 38, in the vicinity of the end portion. The decrease in plasma density can be suppressed.

  Furthermore, the longitudinal ends of the blowout ports 387 overlap with each other when viewed from the transport direction D1, so that the longitudinal ends of the longitudinal blowout ports 387 at which the plasma density becomes relatively low. The plasma density irradiated onto the workpiece W from the vicinity of the part can be made substantially uniform. The overlap amount W4 may be appropriately determined according to the length of the chamber portions 3821 and 3822, the shape of the blowout port 387, the gas flow rate, and the like.

  Next, an electrical configuration of the work processing apparatus S according to the present embodiment will be described. FIG. 9 is a block diagram showing a control system of the work processing apparatus S. This control system includes a CPU (central processing unit) 901 and an overall control unit 90 including its peripheral circuits, a microwave output control unit 91 including an output interface and a drive circuit, a gas flow rate control unit 92, and conveyance control. Unit 93, stub drive unit 99, heater drive unit 100, an operation unit 95 which provides a predetermined operation signal to the overall control unit 90, an input interface and analog / digital conversion. A sensor input unit 96, 97, and 98, a sensor 36, 971, and 981, a drive motor 931, a flow rate control valve 923, the stub tuner units 70A, 70B, 70C, and 70X, and a heater 37. The

  The microwave output control unit 91 performs ON / OFF control and output intensity control of the microwave output from the microwave generator 20. The microwave output controller 91 generates the 2.45 GHz pulse signal and The operation control of the microwave generation by the apparatus main body 21 is performed.

  The gas flow rate control unit 92 controls the flow rate of the processing gas supplied to each plasma generation nozzle 31 of the plasma generation unit 30. Specifically, the opening degree of the flow rate control valve 923 provided in the gas supply pipe 922 connecting the processing gas supply source 921 such as a gas cylinder and each plasma generating nozzle 31 is adjusted.

  The conveyance control unit 93 controls the operation of the drive motor 931 that rotationally drives the conveyance roller 80, and controls the start / stop of conveyance of the workpiece W, the conveyance speed, and the like. The stub drive unit 99 and the heater drive unit 100 perform drive control of the stub tuner units 70A, 70B, 70C, and 70X and the heater 37, respectively.

  The overall control unit 90 is responsible for overall operation control of the work processing apparatus S. The detection result of the temperature sensor 36 input from the sensor input unit 96 in response to an operation signal given from the operation unit 95, The microwave output control unit monitors the measurement result of the conveyance speed of the workpiece W by the speed sensor 971 input from the sensor input unit 97, the conveyance state of the workpiece W by the workpiece detection sensor 981 input from the sensor input unit 98, and the like. 91, the gas flow control unit 92, the conveyance control unit 93, the stub drive unit 99, and the heater drive unit 100 are controlled based on a predetermined sequence. As shown in FIG. 1, the workpiece detection sensor 981 that is a workpiece detection unit is arranged on the conveyance path of the workpiece W and blocks the light path between the light emitting element 982 (the transmitted light amount when the workpiece W is a glass substrate or the like). ) Or the presence or absence of formation (presence or absence of reflection by the workpiece W) to detect the conveyance of the workpiece W (in the example of FIG.

  Specifically, the CPU 901 starts the operation of the work processing apparatus S based on a control program stored in advance in the memory 902, and when the start of processing is instructed by an operation from the operation unit 95, The drive motor 931 is activated via the conveyance control unit 93 to start conveyance of the workpiece W to the plasma generation unit 30. CPU901 reads the conveyance speed of the workpiece | work W from the speed sensor 971 via the sensor input part 97, and controls it so that it may become a fixed speed.

  The CPU 901 starts preheating of the heater 37 via the heater driving unit 100 and the flow rate via the gas flow rate control unit 92 simultaneously with the start of conveyance of the workpiece W or when the workpiece W reaches a predetermined position. The control valve 923 is controlled so that a predetermined flow rate of processing gas is supplied to each plasma generation nozzle 31 and a microwave power greater than that during steady lighting is applied to the microwave generator 20 via the microwave output controller 91. Each plasma generating nozzle 31 is heated. In this state, the CPU 901 retreats (fully opens) the stub 71 in the stub tuner unit 70X corresponding to each plasma generation nozzle 31 via the stub drive unit 99 and scans the stub tuner units 70A, 70B, and 70C. The standing wave pattern in the waveguide 10 is changed. As a result, each plasma generating nozzle 31 is turned on by plasma, and whether or not it is turned on can be determined from whether or not the temperature sensor 36 has reached a predetermined temperature or more as a result of detection. The energization of the heater 37 is terminated when the detection result of the temperature of the adapter 38 by the temperature sensor 36 input from the sensor input unit 96 reaches a predetermined temperature due to the lighting.

  When the lighting of all the plasma generating nozzles 31 is detected, the CPU 901 reduces the microwave power to the level at the time of steady lighting and the stub tuner unit 70X and the adapter 38 so that the temperature of each adapter 38 becomes constant. The flow control valve 923 is controlled. When the temperature became constant and the uniform plasma irradiation became possible, the workpiece W passed through the plasma generation unit 30 and the CPU 901 enabled the plasma irradiation by the lamp display of the operation unit 95 or the like. To the worker.

  When the rear end of the work W is detected by the work detection sensor 981 via the sensor input unit 98 and the subsequent work W is not detected, the CPU 901 determines when the rear end has passed through the plasma generation unit 30 or after that After a lapse of time, the supply of the processing gas is stopped and the generation of microwaves is stopped. Furthermore, the heater 37 is driven at that time or when a temperature drop of the adapter 38 below a predetermined temperature is detected. The drive motor 931 is also stopped at an appropriate time after the final work W is discharged from the work processing apparatus S. Note that, depending on the transfer speed of the workpiece W and the mounting position of the workpiece detection sensor 981, the plasma lighting may be performed after the tip of the workpiece W is detected by the workpiece detection sensor 981.

  On the other hand, the plasma generation nozzle 31 does not always light up under the same conditions every time, but lighting occurs accidentally. Therefore, the CPU 901 scans the stub tuner units 70A, 70B, and 70C, and a predetermined time elapses. If all the plasma generating nozzles 31 are not lit even after that, the generation of microwaves is stopped once, and then restart (reset operation) is performed to start the generation of microwaves again.

  When the temperature sensor 36 detects that the temperature has become abnormally high, the CPU 901 determines that arc discharge has occurred in the plasma generation nozzle 31 instead of the glow discharge, and generates microwaves. The protection operation to stop is performed. As a result, damage to the central conductor 32 (inner electrode), the nozzle body 33 (outer electrode), the seal member 35 that holds the central conductor 32, and the like can be prevented. Thereafter, after a predetermined time has elapsed, or when the detected temperature falls below a predetermined value, the apparatus may be automatically restarted. For detecting such arcing, the plasma generation nozzle 31 itself may be provided with a temperature sensor or an optical sensor for detecting plasma lighting.

  In this way, the plasma generation nozzle 31 is controlled by controlling at least one of the processing gas supply amount and the microwave power based on the detection result of the work detection sensor 981 to control the turning on / off of the plasma and driving the heater 37. Further, uniform plasma plasma irradiation can be performed while suppressing consumption of the processing gas.

  According to the work processing apparatus S described above, the work W is transported by the work transport means C, and plasma is generated from the adapter 38 at the tip of the plasma generating nozzle 31 attached to the waveguide 10 in an array. Since it is possible to radiate the gas to the workpiece W, it is possible to continuously perform plasma processing on a plurality of workpieces to be processed, and also to efficiently perform plasma processing on large-area workpieces. be able to. Therefore, it is possible to provide the work processing apparatus S or the plasma generation apparatus PU that is superior in plasma processing workability to various types of workpieces as compared with batch processing type work processing apparatuses. Moreover, since plasma can be generated at an external temperature and pressure, a vacuum chamber or the like is not required, and the equipment configuration can be simplified.

  In addition, the microwave generated from the microwave generator 20 is received by the receiving antenna unit 320 provided in each plasma generation nozzle 31, and the gas converted into plasma from each plasma generation nozzle 31 based on the energy of the microwave. Therefore, the transmission system of the energy held by the microwave to each plasma generating nozzle 31 can be simplified. Therefore, simplification of the device configuration, cost reduction, and the like can be achieved.

  Further, since the plasma generation unit 30 in which the plurality of plasma generation nozzles 31 are arranged in a line has a width that substantially matches the size t in the width direction orthogonal to the conveyance direction of the flat workpiece W, By simply passing the workpiece W through the plasma generating unit 30 only once by the conveying means C, the processing of the entire surface can be completed, and the plasma processing efficiency for the plate-shaped workpiece can be remarkably improved.

The work processing apparatus S according to the embodiment of the present invention has been described above, but the present invention is not limited to this, and for example, the following embodiment can be taken.
(1) In the above-described embodiment, the transport unit C that transports the workpiece W is used as the moving unit. As the transport unit C, a mode in which the workpiece W is mounted on the upper surface of the transport roller 80 and transported is exemplified. In addition to this, for example, a form in which the work W is nipped between the upper and lower transport rollers and transported, a form in which the work is stored in a predetermined basket without using the transport roller, and the basket is transported by a line conveyor or the like, For example, the workpiece W may be gripped and conveyed to the plasma generation unit 30 by using a method such as Alternatively, the moving means may be configured to move the plasma generating nozzle 31 side. That is, the workpiece W and the plasma generation nozzle 31 may be relatively moved in a direction (X direction) intersecting the plasma irradiation direction (Z direction) and the arrangement direction (Y direction) of the plasma generation nozzles 31.
(2) In the above embodiment, a magnetron that generates a microwave of 2.45 GHz is illustrated as a microwave generation source. However, various high-frequency power sources other than the magnetron can be used, and a microwave having a wavelength different from 2.45 GHz. A wave may be used.

  A workpiece processing apparatus and a plasma generation apparatus according to the present invention include an etching processing apparatus and a film forming apparatus for a semiconductor substrate such as a semiconductor wafer, a glass substrate such as a plasma display panel, a cleaning processing apparatus for a printed board, and a sterilization process for a medical device. The present invention can be suitably applied to an apparatus, a protein decomposition apparatus, and the like.

It is a perspective view which shows the whole structure of the workpiece processing apparatus which concerns on this invention. FIG. 2 is a perspective view of a plasma generation unit with a different line-of-sight direction from FIG. 1. It is a see-through | perspective side view which shows the installation condition of a stub tuner. It is a partial see-through | perspective side view of a workpiece | work processing apparatus. It is sectional drawing which expands and shows an adapter from a plasma generation nozzle. It is a disassembled perspective view of the said adapter. It is a perspective view which expands and shows the attachment part from the said plasma generation nozzle to the waveguide of an adapter. It is sectional drawing which shows the function of an adapter typically. It is a block diagram which shows the control system of a workpiece | work processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Waveguide 20 Microwave generator 30 Plasma generating part 31 Plasma generating nozzle 32 Central conductor 320 Reception antenna part 33 Nozzle main body 332 Cylindrical space 339, 3819 Radiation fin 34 Nozzle holder 344 Gas supply hole 36 Temperature sensor 37 Heater 38 Adapter 381 Attaching part 382 Plasma chamber 3821, 3822 Chamber part 3823 Concave groove 3824 Opening 383, 384 Slit plate 387 Outlet 388 Attaching part 389 Thin part 39 Cooling pipe 40 Sliding short 50 Circulator 60 Dummy load 70 Stub tuners 70A, 70B, 70C, 70X Stub tuner unit 80 Conveying roller 90 Overall control unit 901 CPU
91 Microwave output control unit 92 Gas flow rate control unit 921 Process gas supply source 923 Flow rate control valve 93 Transfer control unit 931 Drive motor 95 Operation unit 96, 97, 98 Sensor input unit 99 Stub drive unit 100 Heater drive unit S Work processing device PU Plasma generation unit C Conveying means W Workpiece

Claims (9)

A microwave generating means for generating a microwave; and a plasma generating nozzle for receiving the microwave from the microwave generating means and generating and emitting a plasma gas based on the energy of the microwave. In the plasma generator
The plasma generating nozzle generates a glow discharge between an inner electrode and an outer electrode that are arranged concentrically to generate plasma, and supplies a processing gas between them, so that the plasma generating nozzle is normally supplied from an annular outlet. It is configured to radiate plasma gas under pressure,
A gas that is attached to the tip of the plasma generation nozzle and is made into a heat capacity that rises in temperature according to the energy consumed by the plasma generation nozzle by a thin member and is converted into plasma from the annular outlet is introduced. a chamber that, the adapter obtain Bei a longitudinal-shaped air outlet communicating with the chamber,
Temperature detecting means mounted on the wall of the chamber and detecting the temperature of the adapter;
A plasma generation apparatus comprising: control means for controlling at least one of a gas supply amount supplied to the plasma generation nozzle and microwave power based on a detection result of the temperature detection means.   2. The plasma generating apparatus according to claim 1, wherein the attaching portion to which the temperature detecting means is attached is formed at the tip of a thin portion extending from the free end portion of the elongated adapter.   Microwaves from the microwave generation means are propagated through the waveguide, and the control means enters the waveguide of a stub tuner provided in the waveguide based on the detection result of the temperature detection means. 3. The plasma generator according to claim 1, wherein the microwave power is adjusted by adjusting a protrusion amount.   The plasma generating apparatus according to any one of claims 1 to 3, wherein at least one of the plasma generating nozzle and the adapter has a radiating fin in the vicinity of a joint portion thereof.   The plasma generator according to claim 1, further comprising a heater for preheating the adapter in the adapter. The microwave from the microwave generation means is propagated through a waveguide, and a plurality of the plasma generation nozzles are arranged in the longitudinal direction of the waveguide. In the plasma generator described,
2. A workpiece processing apparatus comprising: a conveying unit configured to convey a workpiece in a predetermined conveyance direction intersecting with an arrangement direction of the plasma generating nozzles.   The work processing apparatus according to claim 6, further comprising a cooling water flow path at a base end portion of the plasma generation nozzle.   The waveguide is provided with a dummy load that absorbs at least one of a microwave that has not been received through each plasma generation nozzle and a microwave that has been reflected to the microwave generation means side, The work processing apparatus according to claim 7, wherein the cooling water flow path is connected to a microwave absorption pipe in the dummy load, and common cooling water is circulated. The plasma generator according to claim 5, further comprising a heater for preheating the adapter.
Conveying means for conveying a workpiece in a predetermined conveying direction intersecting with the longitudinal direction of the adapter;
Comprising a workpiece detection means for detecting the conveyance state of the workpiece by the conveyance means,
The control means controls at least one of the gas supply amount and the microwave power in accordance with the detection result of the work detection means to control the turning on / off of the plasma, and the drive control of the heater. Work processing device characterized by

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