JP2007234298A - Plasma generating device and workpiece processing device using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable a plasma generating device, as one used for processing of a workpiece such as reforming of a substrate, to have a waveguide mount a plurality of plasma generating nozzles and carry out uniform plasma treatment in correspondence with processing of a plurality of workpieces to be processed or a workpiece to be processed of a large area. <P>SOLUTION: A center conductor 32 of each plasma generating nozzle 31 is divided into top and bottom, a rod 321 of a top half is given any selected length, and mounted on a common bottom-side rod 322, so that a length of a receiving antenna part 320 is made adjustable. The farther it is away from the microwave generating device, the longer the receiving antenna part 320 is formed. Therefore, with a receiving microwave energy at each of the plurality of plasma generating nozzles 31 nearly constant, plumes of nearly the same size can be obtained, and a uniform plasma treatment can be applied on the plurality of workpieces to be processed or a large-area workpiece to be processed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plasma generator capable of purifying or modifying the surface of a workpiece by irradiating plasma on a workpiece to be processed such as a substrate, and a workpiece processing apparatus using the plasma generator.

For example, there is known a workpiece processing apparatus that irradiates a workpiece to be processed such as a semiconductor substrate with plasma and removes organic contaminants on the surface, surface modification, etching, thin film formation, or thin film removal. For example, Patent Document 1 uses a plasma generation nozzle having concentric inner conductors and outer conductors, and applies a high-frequency pulse electric field between the two conductors, thereby generating glow discharge instead of arc discharge. The plasma is generated, and a high-density plasma is generated by turning the processing gas from the gas supply source from the base end side to the free end side while swirling between both conductors, and is attached to the free end. A plasma processing apparatus is disclosed in which high-density plasma can be obtained under normal pressure by radiating a workpiece to be processed from a nozzle.
JP 2003-197397 A

  However, in the above-described prior art, only a single plasma generating nozzle is shown. When processing a large-area workpiece or a plurality of workpieces to be processed, a plurality of plasma generating nozzles can be used to process workpieces of various shapes. In addition, it is impossible to conceive how the uniform plasma treatment can be realized.

  An object of the present invention is to provide a plasma generating apparatus capable of performing uniform processing on a plurality of workpieces to be processed and workpieces having a large area, and a workpiece processing apparatus using the same.

  The plasma generator according to the present invention includes a microwave generating means for generating a microwave, a waveguide for propagating the microwave, and the waveguide attached to the waveguide, receiving the microwave, and converting the microwave energy into the microwave energy. And a plasma generating nozzle configured to generate and discharge a plasma gas based on the plurality of plasma generating nozzles arranged in the waveguide and receiving the microwave. The receiving antenna section of each plasma generating nozzle is provided with an adjusting means for adjusting the microwave energy applied to the plasma generating nozzle.

  According to the above configuration, in the plasma generating apparatus that can be used for workpiece processing such as substrate modification, a plurality of plasma generating nozzles are arranged and attached to the waveguide. In order to cope with processing of a workpiece having a large area, an adjustment means for adjusting the microwave energy applied to the plasma generating nozzle is provided in the receiving antenna portion of each plasma generating nozzle that receives the microwave. For example, when the flat plate-shaped workpiece is irradiated with plasma, the adjusting means lengthens the receiving antenna portion stepwise or continuously as the distance from the microwave generating means increases. When plasma is applied to a workpiece or an uneven workpiece, the receiving antenna unit may have a length corresponding to the microwave energy to be applied to the nozzle.

  Accordingly, the plasma energy applied to the workpiece from each of the plurality of plasma generating nozzles can be made substantially constant, and the plurality of workpieces to be processed and a workpiece having a large area can be uniformly subjected to plasma processing. .

  In the plasma generating apparatus of the present invention, the adjusting means is composed of an adjusting member having a plurality of types of lengths and having a microwave receiving ability, and the receiving antenna portion of each plasma generating nozzle has a predetermined length. Each of the adjustment members is selected and attached, so that the reception length of the reception antenna unit in the waveguide can be adjusted.

  According to the above configuration, the adjustment means is an attachment member that is detachable from the reception antenna unit, has a plurality of types of lengths, and includes an adjustment member having a microwave reception capability. The microwave energy applied to the nozzle can be adjusted simply by selecting an adjustment member having a length corresponding to the microwave energy to be applied and the distance from the microwave generation means and attaching the adjustment member to the receiving antenna unit.

  Therefore, uniform plasma treatment can be easily performed on the plurality of workpieces and workpieces having a large area.

  In addition, the plasma generator of the present invention includes a microwave generator for generating a microwave, a waveguide for propagating the microwave, and the microwave generator attached to the waveguide, receiving the microwave and receiving the microwave. A plasma generation device configured to generate and release a plasma gas based on energy, wherein a plurality of the plasma generation nozzles are attached to the waveguide, and the plasma generation nozzles are arranged. One end of the nozzle protrudes into the waveguide and has a receiving antenna part for receiving microwaves, and the height of the tip of the receiving antenna part in the waveguide is from the microwave generating means. A plasma generator characterized by being set higher stepwise or continuously as it goes away.

  According to the above configuration, in the plasma generating apparatus that can be used for workpiece processing such as substrate modification, a plurality of plasma generating nozzles are arranged and attached to the waveguide. In dealing with a large-area workpiece to be processed, the height of the tip of each plasma generating nozzle that receives the microwave in the waveguide of the receiving antenna section is farther away from the microwave generating means. Set high stepwise or continuously.

  Accordingly, the plasma energy applied to the workpiece from each of the plurality of plasma generating nozzles can be made substantially constant, and the plurality of workpieces to be processed and a workpiece having a large area can be uniformly subjected to plasma processing. .

  Furthermore, the workpiece processing apparatus of the present invention includes a workpiece transfer means for transferring a workpiece so as to pass through each of the plasma nozzles, and the workpiece is transferred to the workpiece while transferring the workpiece to be processed. A predetermined treatment is performed by irradiating plasma.

  Accordingly, the plasma energy irradiated to the workpiece from each of the plurality of plasma generation nozzles is made substantially constant, and the workpiece can be uniformly subjected to plasma processing even on a plurality of workpieces to be processed or a large area workpiece. A processing device can be realized.

  As described above, the plasma generator of the present invention is a plasma generator that can be used for processing of a workpiece, such as substrate modification, in which a plurality of plasma generating nozzles are arranged and attached to a waveguide. Adjustment means for adjusting the microwave energy applied to the plasma generation nozzle to the reception antenna portion of each plasma generation nozzle that receives the microwave when dealing with processing of a plurality of workpieces or workpieces having a large area. Is provided.

  Therefore, the plasma energy applied to the workpiece from each of the plurality of plasma generating nozzles is made substantially constant, and the plurality of workpieces to be processed and the workpiece having a large area can be uniformly subjected to plasma processing. it can.

  Further, as described above, the plasma generator of the present invention is a plasma generator that can be used for processing of a workpiece such as substrate modification, and a plurality of plasma generating nozzles are arranged and attached to a waveguide. When processing a plurality of workpieces or workpieces having a large area, the height of the tip of each plasma generating nozzle that receives the microwave in the waveguide of the receiving antenna unit is set to Set higher stepwise or continuously as you move away from the wave generating means.

  Therefore, the plasma energy applied to the workpiece from each of the plurality of plasma generating nozzles is made substantially constant, and the plurality of workpieces to be processed and the workpiece having a large area can be uniformly subjected to plasma processing. it can.

  Furthermore, as described above, the workpiece processing apparatus of the present invention includes a workpiece transfer means for transferring a workpiece so as to pass through each of the plasma nozzles in the plasma generator, and transfers a workpiece to be processed. However, the workpiece is irradiated with plasma and given treatment.

  Therefore, the plasma energy applied to the workpiece from each of the plurality of plasma generating nozzles can be made substantially constant, and even a plurality of workpieces to be processed and a workpiece having a large area can be uniformly processed. A work processing apparatus can be realized.

[Embodiment 1]
FIG. 1 is a perspective view showing an overall configuration of a work processing apparatus S according to an embodiment of the present invention. The workpiece processing apparatus S includes a plasma generation unit PU (plasma generation apparatus) that generates plasma and irradiates the workpiece W, which is an object to be processed, with the plasma, and a predetermined route that passes the workpiece W through the plasma irradiation region. It is comprised from the conveyance means C which conveys. 2 is a perspective view of the plasma generation unit PU in which the line-of-sight direction is different from that in FIG. 1, and FIG. 3 is a partially transparent side view. 1 to 3, the XX direction is the front-rear direction, the Y-Y direction is the left-right direction, the ZZ direction is the up-down direction, the -X direction is the front direction, the + X direction is the rear direction,- Y will be described as a left direction, + Y direction as a right direction, -Z direction as a downward direction, and + Z direction as an upward direction.

  The plasma generation unit PU is a unit capable of generating plasma at normal temperature and pressure using microwaves. In general, the waveguide 10 propagates microwaves, and one end side of the waveguide 10 ( Microwave generator 20 arranged on the left side for generating microwaves of a predetermined wavelength, plasma generator 30 provided on waveguide 10, and arranged on the other end side (right side) of waveguide 10 for absorbing microwaves Among the microwaves emitted to the dummy load 40 and the waveguide 10, the circulator 50 that separates the reflected microwaves described later so as not to return to the microwave generator 20, and the reflected microwaves separated by the circulator 50 are absorbed. The dummy load 60 and the stub tuner 70 for impedance matching between the waveguide 10 and the plasma generation nozzle 31 are provided. The conveying means C includes a conveying roller 80 that is rotationally driven by a driving means (not shown). In the present embodiment, an example in which a flat workpiece W is conveyed by the conveying means C is shown.

  The waveguide 10 is made of a nonmagnetic metal such as aluminum, has a long tubular shape with a rectangular cross section, and propagates the microwave generated by the microwave generator 20 toward the plasma generator 30 in the longitudinal direction thereof. Is. The waveguide 10 is composed of a connected body in which a plurality of divided waveguide pieces are connected to each other by flange portions, and the first conductor on which the microwave generator 20 is mounted in order from one end side. The wave tube piece 11, the second waveguide piece 12 to which the stub tuner 70 is assembled, and the third waveguide piece 13 provided with the plasma generator 30 are connected. A circulator 50 is interposed between the first waveguide piece 11 and the second waveguide piece 12, and a dummy load 40 is connected to the other end side of the third waveguide piece 13.

  The first waveguide piece 11, the second waveguide piece 12, and the third waveguide piece 13 are each formed into a rectangular tube shape using an upper plate, a lower plate, and two side plates made of a metal flat plate. It is assembled and flange plates are attached to both ends thereof. In addition, you may make it use the rectangular waveguide piece formed by extrusion molding, the bending process of a plate-shaped member, etc., or a non-dividing type | mold waveguide irrespective of the assembly of such a flat plate. In addition, the waveguide is not limited to a rectangular cross section, and for example, a waveguide having an elliptical cross section can be used. Furthermore, not only a nonmagnetic metal but a waveguide can be comprised with the various members which have a waveguide effect | action.

  The microwave generator 20 includes, for example, an apparatus main body portion 21 including a microwave generation source such as a magnetron that generates a microwave of 2.45 GHz, and the microwave generated by the apparatus main body portion 21 inside the waveguide 10. And a microwave transmission antenna 22 that emits light to the outside. In the plasma generation unit PU according to the present embodiment, for example, a continuously variable microwave generator 20 that can output microwave energy of 1 W to 3 kW is preferably used.

  As shown in FIG. 3, the microwave generation device 20 has a configuration in which a microwave transmission antenna 22 protrudes from the device main body 21, and is fixed in a mode of being placed on the first waveguide piece 11. Has been. Specifically, the apparatus main body 21 is placed on the upper surface plate 11U of the first waveguide piece 11, and the microwave transmitting antenna 22 is inside the first waveguide piece 11 through the through hole 111 formed in the upper surface plate 11U. The waveguide space 110 is fixed so as to protrude. With this configuration, the microwave of 2.45 GHz, for example, emitted from the microwave transmission antenna 22 is directed from one end side (left side) to the other end side (right side) by the waveguide 10. Propagated.

The plasma generation unit 30 includes eight plasma generation nozzles 31 that are arranged in a row in the left-right direction on the lower surface plate 13B of the third waveguide piece 13 (the surface facing the workpiece to be processed). Configured. The width of the plasma generation unit 30, that is, the arrangement width in the left-right direction of the eight plasma generation nozzles 31 is a width that substantially matches the size t in the width direction orthogonal to the conveying direction of the flat workpiece W. Thereby, the plasma processing can be performed on the entire surface of the workpiece W (the surface facing the lower surface plate 13B) while the workpiece W is being conveyed by the conveying roller 80. The arrangement interval of the eight plasma generating nozzles 31 is preferably determined according to the wavelength lambda _G of the microwave propagating through the waveguide 10. For example, a half pitch of the wavelength lambda _G, 1/4, it is desirable to arrange the plasma generation nozzles 31 at a pitch, with a 2.45GHz microwave, 2.84 inch cross-sectional size of the rectangular waveguide 10 In the case of × 1.38 inch, since λ _G = 230 mm, the plasma generating nozzles 31 may be arranged at a pitch of 115 mm (λ _G / 2) or 57.5 mm (λ _G / 4).

  4 is an enlarged side view showing two plasma generation nozzles 31 (one plasma generation nozzle 31 is drawn as an exploded view), and FIG. 5 is a cross-sectional view taken along line AA in FIG. The plasma generating nozzle 31 includes a central conductor 32 (internal conductor), a nozzle body 33 (external conductor), a nozzle holder 34, a seal member 35, and a protective tube 36.

  The central conductor 32 is made of a highly conductive metal such as copper, aluminum, or brass, and is made of a rod-like member having a diameter of about 1 to 5 mm, and can be divided into an upper rod 321 and a lower rod 322. Yes. The lower rod 322 is common to the plasma generating nozzles 31, the upper end 3221 is held by the seal member 35, and the lower end 3222 is substantially flush with the lower end edge 331 of the nozzle body 33. Is arranged. On the other hand, the rod 321 on the upper side constitutes an adjusting means and an adjusting member, and penetrates the lower surface plate 13B of the third waveguide piece 13 individually between the plasma generating nozzles 31 to the waveguide space 130. It protrudes by the length. The protruding length of the rod 321 from the seal member 35 is a reception length that contributes to the reception of microwaves.

  From the upper end side of the rod 322 on the lower side, a connecting convex portion 3223 that protrudes to the waveguide space 130 side by a predetermined length and has a small diameter is extended. Correspondingly, a connecting recess 3213 is formed on the lower end side of the upper rod 321. Then, the upper rod 321 is attached to the lower rod 322 so that the connecting convex portion 3223 fits into the connecting concave portion 3213. The connecting convex part 3223 and the upper rod 321 constitute a receiving antenna part 320.

  At this time, in the case where the workpiece W to be processed has a flat plate shape, the farther away from the microwave generator 20, the greater the distance from the microwave generator 20 in accordance with the arrangement position of each plasma generating nozzle 31 from the microwave generator 20 in FIG. A long upper rod, as indicated by reference numeral 321 ′, is attached to the lower rod 322. Here, the intensity of the microwave in the waveguide 10 becomes stronger near the central portion and becomes smaller toward the both ends. However, it is behind the front plasma generating nozzle for the rear plasma generating nozzle. Therefore, it is only necessary to select a long rod so that the tip height increases as the distance from the microwave generator 20 increases as described above, and the length is also continuously changed as shown in FIG. In addition, the number of types of rods may be reduced by changing in stages.

  Note that the energy of the received microwave changes more greatly depending on the height of the tip than the length of the rod 321 protruding into the waveguide 10. For example, a rod that is simply projected into the waveguide 10 and a rod whose base end side is shielded and the projection length from the shield is short are received if the tip portion is high. The microwave energy is high. When the base end side is not shielded, the energy of the received microwave increases as the protruding length into the waveguide 10 increases.

  Thereby, the microwave energy (microwave power) received by the receiving antenna unit 320 of each plasma generating nozzle 31 becomes substantially equal, and the received microwave energy is given to the lower rod 322 and has the same magnitude. Plume P (see FIG. 6) can be obtained. On the other hand, when irradiating a curved workpiece or a workpiece with projections and depressions with plasma, the upper rod 321 uses the microwave energy (the size of the required plume P) to be received by the plasma generation nozzle and the microwave. The length corresponding to the arrangement position from the generator 20 is selected.

  If the microwave receiving efficiency is different due to, for example, the material of the upper rod 321 being different, the length of the upper rod 321 may be determined according to the receiving efficiency. In addition, an internal screw may be engraved in the connection concave portion 3213 and an external screw may be engraved in the connection convex portion 3223 to form a retaining structure.

  The nozzle body 33 is a cylindrical body made of a highly conductive metal and having a cylindrical space 332 that houses the central conductor 32. The nozzle holder 34 is also made of a highly conductive metal, and has a relatively large-diameter lower holding space 341 that holds the nozzle body 33 and a relatively small-diameter upper holding space 342 that holds the seal member 35. It is a state. On the other hand, the sealing member 35 is made of a heat-resistant resin material such as Teflon (registered trademark) or an insulating member such as ceramic, and has a holding hole 351 that holds the upper end portion 3221 of the lower rod 322 fixedly at its center. It consists of a cylindrical body provided on the shaft.

  The nozzle body 33 is provided in an annularly projecting manner from the upper side, an upper body part 33U fitted in the lower holding space 341 of the nozzle holder 34, an annular recess 33S for holding a gas seal ring 37 described later. A flange portion 33F and a lower body portion 33B protruding from the nozzle holder 34 are provided. In addition, a communication hole 333 for supplying a predetermined processing gas to the cylindrical space 332 is formed in the upper body portion 33U.

  The nozzle body 33 functions as an external conductor disposed around the central conductor 32. The central conductor 32 is a cylindrical space with a predetermined annular space H (insulation interval) secured around it. It is inserted on the central axis of 332. The nozzle body 33 has a nozzle holder such that the outer peripheral portion of the upper body portion 33U is in contact with the inner peripheral wall of the lower holding space 341 of the nozzle holder 34 and the upper end surface of the flange portion 33F is in contact with the lower end edge 343 of the nozzle holder 34. 34 is fitted. The nozzle body 33 is preferably attached to the nozzle holder 34 with a detachable fixing structure using, for example, a plunger or a set screw.

  The nozzle holder 34 includes an upper body portion 34U (corresponding approximately to the position of the upper holding space 342) and a lower surface plate 13B that are closely fitted in a through hole 131 formed in the lower surface plate 13B of the third waveguide piece 13. And a lower body portion 34B (substantially corresponding to the position of the lower holding space 341). A gas supply hole 344 for supplying a processing gas to the annular space H is formed in the outer periphery of the lower body portion 34B. Although not shown, a pipe joint or the like for connecting a terminal portion of a gas supply pipe for supplying a predetermined processing gas is attached to the gas supply hole 344. The gas supply hole 344 and the communication hole 333 of the nozzle body 33 are set so that they are in communication with each other when the nozzle body 33 is fitted into the nozzle holder 34 at a fixed position. A gas seal ring 37 is interposed between the nozzle body 33 and the nozzle holder 34 in order to suppress gas leakage from the abutting portion between the gas supply hole 344 and the communication hole 333.

  A plurality of the gas supply holes 344 and the communication holes 333 may be perforated at equal intervals in the circumferential direction, and are not perforated in the radial direction toward the center. The gas may be perforated in the tangential direction of the outer peripheral surface of the cylindrical space 332 so as to swirl the gas. Further, the gas supply hole 344 and the communication hole 333 are not perpendicular to the central conductor 32, and may be formed obliquely from the upper end 321 side to the lower end 322 side in order to improve the flow of the processing gas. Good.

  The seal member 35 has a lower end edge 352 in contact with an upper end edge 334 of the nozzle body 33 and an upper end edge 353 in contact with an upper end locking portion 345 of the nozzle holder 34 in the upper holding space 342 of the nozzle holder 34. Is retained. That is, the upper holding space 342 is assembled so that the seal member 35 supporting the central conductor 32 is fitted and the lower end edge 352 of the nozzle body 33 is pressed by the upper end edge 334. is there.

  The protective tube 36 (not shown in FIG. 5) is made of a quartz glass pipe or the like having a predetermined length, and has an outer diameter substantially equal to the inner diameter of the cylindrical space 332 of the nozzle body 33. The protective tube 36 has a function of preventing abnormal discharge (arcing) at the lower end edge 331 of the nozzle body 33 and radiating a plume P to be described later normally. The cylindrical space 332 is inserted so as to protrude from the edge 331. Note that the entire protective tube 36 may be accommodated in the cylindrical space 332 so that the tip end thereof coincides with the lower end edge 331 or enters the inner side of the lower end edge 331.

  As a result of the plasma generation nozzle 31 being configured as described above, the nozzle body 33, the nozzle holder 34, and the third waveguide piece 13 (waveguide 10) are in a conductive state (the same potential), Since the central conductor 32 is supported by the insulating seal member 35, it is electrically insulated from these members. Therefore, as shown in FIG. 6, when the microwave is received by the receiving antenna unit 320 of the central conductor 32 and the microwave power is supplied to the central conductor 32 in a state where the waveguide 10 is at the ground potential. An electric field concentration portion is formed in the vicinity of the lower end portion 322 and the lower end edge 331 of the nozzle body 33.

  In this state, when an oxygen-based processing gas such as oxygen gas or air is supplied from the gas supply hole 344 to the annular space H, the processing gas is excited by the microwave power and the lower end of the central conductor 32 is excited. Plasma (ionized gas) is generated near the portion 322. Although this plasma has an electron temperature of tens of thousands of degrees, the gas temperature is a reactive plasma that is close to the outside temperature (a plasma in which the electron temperature indicated by electrons is extremely high compared to the gas temperature indicated by neutral molecules). It is a plasma generated under normal pressure.

  The processing gas thus converted into plasma is radiated from the lower edge 331 of the nozzle body 33 as a plume P by the gas flow provided from the gas supply hole 344. This plume P contains radicals. For example, when an oxygen-based gas is used as the processing gas, oxygen radicals are generated, and the plume P having an organic substance decomposition / removal action, a resist removal action, and the like can be obtained. In the plasma generation unit PU according to the present embodiment, since a plurality of plasma generation nozzles 31 are arranged, it is possible to generate a line-shaped plume P extending in the left-right direction.

  Incidentally, when an inert gas such as argon gas or nitrogen gas is used as the processing gas, the surface cleaning and surface modification of various substrates can be performed. Further, if a compound gas containing fluorine is used, the substrate surface can be modified to a water-repellent surface, and using a compound gas containing a hydrophilic group can modify the substrate surface to a hydrophilic surface. Furthermore, if a compound gas containing a metal element is used, a metal thin film layer can be formed on the substrate.

  The dummy loads 40 and 60 are water-cooled (or air-cooled) radio wave absorbers that absorb excess microwaves and convert them into heat. These dummy loads 40 and 60 are provided with cooling water circulation ports 41 and 61 for circulating cooling water therein, and heat generated by heat-converting surplus microwaves is heated to the cooling water. It is to be exchanged. Due to the dummy load 40, the end of the waveguide 10 is a non-reflective end.

  The circulator 50 is composed of, for example, a waveguide-type three-port circulator with a built-in ferrite column. Of the microwaves once propagated toward the plasma generator 30, the plasma generator 30 returns without being consumed. The incoming reflected microwave is directed to the dummy load 60 without returning to the microwave generator 20. By arranging such a circulator 50, the microwave generator 20 is prevented from being overheated by the reflected microwave.

  FIG. 7 is a top view of the plasma generation unit PU for explaining the operation of the circulator 50. As shown, the first port 51 of the circulator 50 has a first waveguide piece 11, the second port 52 has a second waveguide piece 12, and the third port 53 has a dummy load 60. It is connected. Then, the microwave generated from the microwave transmission antenna 22 of the microwave generator 20 travels from the first port 51 to the second waveguide piece 12 via the second port 52 as indicated by an arrow a. On the other hand, the reflected microwaves that are reflected by the receiving antenna unit 320 of each plasma generating nozzle 31 and are incident from the second waveguide piece 12 side are transmitted from the second port 52 to the third as shown by the arrow b. It is deflected toward the port 53 and enters the dummy load 60.

  The stub tuner 70 is for impedance matching between the waveguide 10 and the plasma generation nozzle 31, and has three stub tuners arranged in series on the upper surface plate 12 U of the second waveguide piece 12 at a predetermined interval. Units 70A to 70C are provided. FIG. 8 is a perspective side view showing an installation state of the stub tuner 70. As shown in the figure, the three stub tuner units 70 </ b> A to 70 </ b> C have the same structure, a stub 71 protruding into the waveguide space 120 of the second waveguide piece 12, and an operation rod 72 directly connected to the stub 71. And a moving mechanism 73 for moving the stub 71 up and down in the vertical direction, and an outer jacket 74 for holding these mechanisms.

  In the stub 71 provided in each of the stub tuner units 70 </ b> A to 70 </ b> C, the protruding length into the waveguide space 120 can be adjusted independently by each operation rod 72. The protruding lengths of these stubs 71 are determined by searching for a point where the power consumption by the central conductor 32 is maximized (a point where the reflected microwave is minimized) while monitoring the microwave power. The operation of the stub tuner 70 is desirably automated using a stepping motor or the like.

  The conveyance means C includes a plurality of conveyance rollers 80 arranged along a predetermined conveyance path, and the conveyance roller 80 is driven by a driving means (not shown), so that the workpiece W to be processed is generated by the plasma generation. It is conveyed via the section 30. Here, examples of the workpiece W to be processed include a flat substrate such as a plasma display panel and a semiconductor substrate, a circuit substrate on which electronic components are mounted, and the like. Also, parts or assembled parts that are not flat-shaped can be processed, and in this case, a belt conveyor or the like may be employed instead of the conveying roller.

  Next, an electrical configuration of the work processing apparatus S according to the present embodiment will be described. FIG. 9 is a block diagram showing a control system of the work processing apparatus S. This control system includes a CPU (central processing unit) 901 and its peripheral circuits, and the like. The overall control unit 90 as a control means, a microwave output control unit 91 including an output interface, a drive circuit, and the like, a gas flow rate control. Unit 92, a conveyance control unit 93, a display unit, an operation panel, and the like, an operation unit 95 for supplying a predetermined operation signal to the overall control unit 90, and a sensor including an input interface, an analog / digital converter, and the like. An input unit 96, 97, sensors 961, 971, a drive motor 931, and a flow control valve 923 are provided.

  The microwave output control unit 91 performs ON / OFF control and output intensity control of the microwave output from the microwave generator 20. The microwave output controller 91 generates the 2.45 GHz pulse signal and The operation control of the microwave generation by the apparatus main body 21 is performed.

  The gas flow rate control unit 92 controls the flow rate of the processing gas supplied to each plasma generation nozzle 31 of the plasma generation unit 30. Specifically, the opening degree of the flow rate control valve 923 provided in the gas supply pipe 922 connecting the processing gas supply source 921 such as a gas cylinder and each plasma generating nozzle 31 is adjusted.

  The conveyance control unit 93 controls the operation of the drive motor 931 that rotationally drives the conveyance roller 80, and controls the start / stop of conveyance of the workpiece W, the conveyance speed, and the like.

  The overall control unit 90 is responsible for overall operation control of the work processing apparatus S. The measurement result of the flow rate sensor 961 input from the sensor input unit 96 according to the operation signal given from the operation unit 95, the sensor The measurement result of the conveyance speed of the workpiece W by the speed sensor 971 input from the input unit 97 is monitored, and the microwave output control unit 91, the gas flow rate control unit 92, and the conveyance control unit 93 are controlled based on a predetermined sequence. Control the operation.

  Specifically, the CPU 901 starts the conveyance of the workpiece W based on a control program stored in advance in the memory 902, guides the workpiece W to the plasma generation unit 30, and generates a processing gas having a predetermined flow rate for each plasma. Plasma (plume P) is generated by supplying microwave power while being supplied to the nozzle 31, and the plume P is radiated on the surface of the workpiece W while it is being conveyed. Thereby, a plurality of works W are processed continuously.

  According to the workpiece processing apparatus S described above, the workpiece W is transported by the workpiece transport means C, and the plasmaized gas from the plasma generating nozzles 31 arranged and attached to the waveguide 10 is supplied to the workpiece W. Since it can radiate | emit with respect to a workpiece | work, a plasma processing can be continuously performed with respect to several to-be-processed workpiece | work, and a plasma processing can be efficiently performed also about the workpiece | work of a large area. Therefore, it is possible to provide the work processing apparatus S or the plasma generation apparatus PU that is superior in plasma processing workability to various types of workpieces as compared with batch processing type work processing apparatuses. Moreover, since plasma can be generated at an external temperature and pressure, a vacuum chamber or the like is not required, and the equipment configuration can be simplified.

  In addition, the microwave generated from the microwave generator 20 is received by the receiving antenna unit 320 of the central conductor 32 included in each plasma generating nozzle 31, and based on the energy of the microwave, from each plasma generating nozzle 31. Since plasmaized gas can be discharged, the transmission system of the energy held by the microwave to each plasma generating nozzle 31 can be simplified. Therefore, simplification of the device configuration, cost reduction, and the like can be achieved.

  Further, since the plasma generation unit 30 in which the plurality of plasma generation nozzles 31 are arranged in a line has a width that substantially matches the size t in the width direction orthogonal to the conveyance direction of the flat workpiece W, By simply passing the workpiece W through the plasma generating unit 30 only once by the conveying means C, the processing of the entire surface can be completed, and the plasma processing efficiency for the plate-shaped workpiece can be remarkably improved. In addition, plasmaized gas can be radiated to the workpiece W being conveyed at the same timing, and uniform surface treatment or the like can be performed.

  Furthermore, the receiving antenna part 320 of each plasma generating nozzle 31 is formed in a length corresponding to the distance from the microwave generator 20 and the size of the required plume P, so that the plurality of workpieces to be processed or large It is possible to uniformly perform plasma processing on a workpiece to be processed having an area, and also on workpieces having various shapes.

The work processing apparatus S according to the embodiment of the present invention has been described above, but the present invention is not limited to this, and for example, the following embodiment can be taken.
(1) In the above embodiment, an example in which a plurality of plasma generating nozzles 31 are arranged in a line is shown. However, the nozzle arrangement may be appropriately determined according to the shape of the workpiece W, the power of microwave power, and the like. The plurality of rows of plasma generating nozzles 31 may be arranged in a matrix or in a staggered arrangement in the conveyance direction of the workpiece W.
(2) In the above-described embodiment, a mode in which a flat work is placed on the upper surface of the transport roller 80 and transported as the transport means C is exemplified. However, for example, the work is nipped between upper and lower transport rollers. In a form in which a workpiece is stored in a predetermined basket or the like without using a conveyance roller and the basket or the like is conveyed by a line conveyor or the like, or is held in a robot hand or the like and conveyed to the plasma generator 30. There may be.
(3) In the above embodiment, a magnetron that generates a microwave of 2.45 GHz is illustrated as a microwave generation source. However, various high-frequency power sources other than the magnetron can be used, and a microwave having a wavelength different from 2.45 GHz. A wave may be used.
(4) In order to measure the microwave power in the waveguide 10, it is desirable to install a power meter at an appropriate position of the waveguide 10. For example, in order to know the ratio of the reflected microwave power to the microwave power emitted from the microwave transmission antenna 22 of the microwave generator 20, a power meter is provided between the circulator 50 and the second waveguide piece 12. It is possible to interpose a waveguide containing the.
(5) In the above embodiment, the receiving antenna unit 320 of each plasma generating nozzle 31 is formed longer as it goes away from the microwave generator 20, but may be formed wider. That is, when the waveguide 10 is considered as a microwave channel, the channel cross-sectional area may be increased and the reception area may be increased.
(6) In the above embodiment, the central conductor 32 of each plasma generating nozzle 31 is divided into upper and lower parts, an arbitrary length is selected for the upper rod 321, and the common lower rod 322 is mounted. Although the length of the receiving antenna unit 320 is adjusted, as shown by the central conductor 32a in FIG. 10, the telescopic shape can be freely expanded and contracted, and the central conductor 32a can be connected to the waveguide space 130. The reception area may be adjusted by adjusting the feed amount. Further, the amount of feeding may be adjusted each time the plume P is changed by a feeding mechanism or the like.

  A workpiece processing apparatus and a plasma generation apparatus according to the present invention include an etching processing apparatus and a film forming apparatus for a semiconductor substrate such as a semiconductor wafer, a glass substrate such as a plasma display panel and a cleaning processing apparatus for a printed board, and a sterilization process for medical equipment. The present invention can be suitably applied to an apparatus, a protein decomposition apparatus, and the like.

It is a perspective view which shows the whole structure of the workpiece processing apparatus which concerns on this invention. FIG. 2 is a perspective view of a plasma generation unit with a different line-of-sight direction from FIG. 1. It is a partial see-through | perspective side view of a workpiece | work processing apparatus. It is a side view which expands and shows two plasma generation nozzles (one plasma generation nozzle is drawn as an exploded view). It is the sectional view on the AA line side of FIG. It is a see-through | perspective side view for demonstrating the generation state of the plasma in a plasma generation nozzle. It is a top view of the plasma generation unit for demonstrating the effect | action of a circulator. It is a see-through | perspective side view which shows the installation condition of a stub tuner. It is a block diagram which shows the control system of a workpiece | work processing apparatus. It is sectional drawing which expands and shows another plasma generation nozzle.

Explanation of symbols

10 Waveguide 130 Waveguide Space 20 Microwave Generator (Microwave Generator)
30 Plasma generator 31 Plasma generating nozzles 32, 32a Central conductor (internal conductor)
321 Upper rod 3213 Connection recess 322 Lower rod 3223 Connection projection 33 Nozzle body (external conductor)
34 Nozzle holder 344 Gas supply hole (gas supply part)
40, 60 Dummy load 50 Circulator 70 Stub tuner 80 Conveying roller 90 Overall control unit 901 CPU
902 Memory 91 Microwave output control unit 92 Gas flow control unit 921 Processing gas supply source 922 Gas supply pipe 923 Flow control valve 93 Transfer control unit 931 Drive motor 95 Operation unit 96, 97 Sensor input unit 961 Flow rate sensor 971 Speed sensor S Workpiece Processing unit PU Plasma generation unit (Plasma generator)
C Conveying means W Workpiece

Claims (5)

Microwave generating means for generating microwaves, a waveguide for propagating the microwaves, and attached to the waveguides, receiving the microwaves and generating plasmad gas based on the energy of the microwaves In the plasma generator configured to include a plasma generating nozzle that emits
A plurality of the plasma generating nozzles are arranged and attached to the waveguide,
A plasma generating apparatus, wherein an adjustment means for adjusting microwave energy applied to the plasma generating nozzle is provided in a receiving antenna portion of each plasma generating nozzle that receives the microwave.   The adjusting means is composed of an adjusting member having a plurality of types of lengths and capable of receiving microwaves, and each adjusting member having a predetermined length is selectively attached to the receiving antenna portion of each plasma generating nozzle. The plasma generating apparatus according to claim 1, wherein the reception length of the reception antenna section in the waveguide is adjustable.   3. The plasma generating apparatus according to claim 2, wherein the adjusting member is selected to be long stepwise or continuously as it moves away from the microwave generating means. Microwave generating means for generating microwaves, a waveguide for propagating the microwaves, and attached to the waveguides, receiving the microwaves and generating plasmad gas based on the energy of the microwaves In the plasma generator configured to include a plasma generating nozzle that emits
A plurality of the plasma generating nozzles are arranged and attached to the waveguide,
Each of the plasma generating nozzles has a receiving antenna portion for receiving a microwave, with one end protruding into the waveguide, and the height of the tip of the receiving antenna portion in the waveguide is the micro-wavelength. A plasma generator characterized by being set higher stepwise or continuously as it goes away from the wave generating means.   The plasma generating apparatus according to any one of claims 1 to 4, further comprising a workpiece conveying means for conveying a workpiece so as to pass through each of the plasma nozzles, while conveying the workpiece to be processed. A workpiece processing apparatus characterized in that a predetermined process is performed by irradiating a plasma on the workpiece.

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