JP4721779B2 - 音響共振器 - Google Patents
音響共振器 Download PDFInfo
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- JP4721779B2 JP4721779B2 JP2005169397A JP2005169397A JP4721779B2 JP 4721779 B2 JP4721779 B2 JP 4721779B2 JP 2005169397 A JP2005169397 A JP 2005169397A JP 2005169397 A JP2005169397 A JP 2005169397A JP 4721779 B2 JP4721779 B2 JP 4721779B2
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- 239000000758 substrate Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 description 29
- 239000010409 thin film Substances 0.000 description 17
- 230000005684 electric field Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
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- 238000002161 passivation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
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- 230000006835 compression Effects 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
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- 230000010355 oscillation Effects 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
42、72 基板
44、74 窪み
46、76 第1電極
47、77 第1表面
48、78 圧電材料レイヤ
50、80 第2電極
60、90 引っ込み領域
100 第2引っ込み領域
Claims (6)
- 第1表面を有し、かつ五角形に形成された基板外辺部を有する基板と、
前記基板の前記第1表面に隣接し、かつ五角形に形成された第1電極外辺部を有する第1電極と、
前記第1電極に隣接し、かつ五角形に形成されたレイヤ外辺部を有する圧電材料のレイヤと、
前記圧電材料のレイヤに隣接する第2電極であって、五角形に形成された第2電極外辺部を備える第2電極と、
前記第2電極に隣接する引っ込み領域であって、五角形に形成され、かつ前記第2電極外辺部よりも前記第2電極の中央側に配置される引っ込み領域外辺部を有する引っ込み領域と
を備えており、
前記第1電極に設けられた第1接点が、前記基板外辺部の一辺から前記基板の第1表面に沿って突出し、
前記第2電極に設けられた第2接点が、前記基板外辺部の前記一辺に対向する前記基板外辺部の別の一辺から前記基板の前記第1表面に沿って突出している、音響共振器。 - 前記基板の前記第1表面内に窪みが形成されており、前記第1電極が該窪みの上方にまたがっている、請求項1記載の音響共振器。
- 前記引っ込み領域の大きさは、前記共振器の大きさの合計の0%〜10%である、請求項2記載の音響共振器。
- 前記引っ込み領域に隣接する第2引っ込み領域を更に有し、
前記第2引っ込み領域は、多角形に形成され、かつ前記第2電極外辺部よりも前記第2電極の中央側に配置される引っ込み領域外辺部を有する、請求項2記載の音響共振器。 - 前記第2引っ込み領域外辺部が、前記引っ込み領域外辺部よりも前記引っ込み領域の中央側に配置されている、請求項4記載の音響共振器。
- 前記窪みが窪み外辺部を定義する形状を備え、前記引っ込み領域外辺部が前記窪み外辺部よりも引っ込んでいる、請求項2記載の音響共振器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/867,540 US7161448B2 (en) | 2004-06-14 | 2004-06-14 | Acoustic resonator performance enhancements using recessed region |
US10/867,540 | 2004-06-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006005924A JP2006005924A (ja) | 2006-01-05 |
JP4721779B2 true JP4721779B2 (ja) | 2011-07-13 |
Family
ID=34862181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005169397A Expired - Fee Related JP4721779B2 (ja) | 2004-06-14 | 2005-06-09 | 音響共振器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7161448B2 (ja) |
JP (1) | JP4721779B2 (ja) |
GB (1) | GB2415307B (ja) |
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GB2415307A (en) | 2005-12-21 |
JP2006005924A (ja) | 2006-01-05 |
GB2415307B (en) | 2008-02-27 |
US20050275486A1 (en) | 2005-12-15 |
US7161448B2 (en) | 2007-01-09 |
GB0511765D0 (en) | 2005-07-20 |
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