CN116097562A - 谐振器及其制作方法、滤波器、电子设备 - Google Patents
谐振器及其制作方法、滤波器、电子设备 Download PDFInfo
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- CN116097562A CN116097562A CN202080103400.9A CN202080103400A CN116097562A CN 116097562 A CN116097562 A CN 116097562A CN 202080103400 A CN202080103400 A CN 202080103400A CN 116097562 A CN116097562 A CN 116097562A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
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- 239000010409 thin film Substances 0.000 description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
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- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 238000010295 mobile communication Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
一种谐振器(100)及其制作方法、滤波器、电子设备，涉及谐振器领域，能够抑制谐振器的导纳曲线上的杂散。该谐振器(100)包括：基板(S)、设置在基板(S)上的换能器(T)；换能器(T)包括层叠设置的第一电极(a1)、压电层(a3)、第二电极(a2)；第二电极(a2)相对于第一电极(a1)靠近基板(S)；第一电极(a1)包括第一边缘(e1)，压电层(a3)包括第二边缘(e2)；第一边缘(e1)与第二边缘(e2)平齐设置。
Description
PCT国内申请，说明书已公开。
Claims (12)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/124110 WO2022087843A1 (zh) | 2020-10-27 | 2020-10-27 | 谐振器及其制作方法、滤波器、电子设备 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116097562A true CN116097562A (zh) | 2023-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080103400.9A Pending CN116097562A (zh) | 2020-10-27 | 2020-10-27 | 谐振器及其制作方法、滤波器、电子设备 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN116097562A (zh) |
| WO (1) | WO2022087843A1 (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7694397B2 (en) * | 2006-02-24 | 2010-04-13 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of manufacturing an acoustic mirror for piezoelectric resonator |
| CN105262455B (zh) * | 2015-10-09 | 2018-07-31 | 锐迪科微电子（上海）有限公司 | 一种高可靠性的薄膜体声波谐振器及其制造方法 |
| CN109660227B (zh) * | 2018-12-24 | 2023-08-18 | 江西省纳米技术研究院 | 薄膜体声波滤波器及其封装方法 |
| CN111162748B (zh) * | 2019-10-23 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | 电极具有空隙层的体声波谐振器、滤波器及电子设备 |
| CN110768644B (zh) * | 2019-10-25 | 2022-09-16 | 河海大学常州校区 | 一种薄膜体声波谐振器及其分隔制备工艺 |
-
2020
- 2020-10-27 CN CN202080103400.9A patent/CN116097562A/zh active Pending
- 2020-10-27 WO PCT/CN2020/124110 patent/WO2022087843A1/zh active Application Filing
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| Publication number | Publication date |
|---|---|
| WO2022087843A1 (zh) | 2022-05-05 |
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