JP4719817B2 - 基板の性質を測定する方法、スキャトロメータ、及び、リソグラフィ装置 - Google Patents
基板の性質を測定する方法、スキャトロメータ、及び、リソグラフィ装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 19
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- 238000005259 measurement Methods 0.000 claims description 6
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- 238000007654 immersion Methods 0.000 description 5
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- 238000001459 lithography Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Environmental & Geological Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Epidemiology (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
ここで、I1は+1次の強度であり、I-1は−1次の強度であり、OVはオーバーレイエラーである。
上記についてのさらなる詳細は、欧州特許出願公開第1628164(A)号で見つけることができる。
ここで、I0+は+dのバイアスを有する重なり合う回折格子の0次の強度であり、I0-は−dのバイアスを有する重なり合う回折格子の0次の強度である。
Claims (4)
- 基板の性質を測定する方法であって、
放射プロジェクタを用いて基板上に放射を投影すること、および
反射した放射の0次および±n次(但しn≧1)を検出すること、
を含み、
前記反射放射は測定すべき性質を示しており、
前記放射は、複数の重畳パターン上に投影され、瞳面に配置されたディテクタが、前記複数の重畳パターンの間のオーバーレイエラーを検出し、
n次回折次数からのデータは、前記オーバーレイエラーを測定するために使用され、
0次回折次数からのデータは、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するように、エラーチェックとして使用され、
前記±n次回折次数は±1次回折次数であり、
前記所定の閾値I thr は、キャリブレーション基板を用いたモデリングまたはキャリブレーションを用いて決定された値である、方法。 - 基板の性質を測定するスキャトロメータであって、
基板上の複数の重畳パターンに放射を投影する放射プロジェクタ、
基板の表面で反射した放射ビームの0次および±n次回折次数(但しn≧1)を検出する瞳面に配置されたディテクタ、および
n次回折次数からのデータに基づき、前記複数の重畳パターンの間のオーバーレイエラーを計算し、かつ、0次回折次数からのデータに基づき、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するデータ処理ユニット、
を備え、
前記±n次回折次数は±1次回折次数であり、
前記所定の閾値I thr は、キャリブレーション基板を用いたモデリングまたはキャリブレーションを用いて決定された値である、スキャトロメータ。 - 検査装置を備えるリソグラフィ装置であって、前記検査装置は、
基板上の複数の重畳パターンに放射を投影する放射プロジェクタ、
基板の表面から反射した放射ビームの0次および±n次回折次数(n≧1)を検出する瞳面に配置されたディテクタ、および
n次回折次数からのデータに基づき、前記複数の重畳パターンの間のオーバーレイエラーを計算し、かつ、0次回折次数からのデータに基づき、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するデータ処理ユニット
を備え、
前記±n次回折次数は±1次回折次数であり、
前記所定の閾値I thr は、キャリブレーション基板を用いたモデリングまたはキャリブレーションを用いて決定された値である、リソグラフィ装置。 - 放射ビームを調節する照明システム、
放射ビームの断面にパターンを付与するパターニングデバイスを支持するサポート、
基板を保持する基板テーブル、
基板のターゲット部分にパターン付与された放射ビームを投影する投影システム、および
検査装置、
を備えるリソグラフィ装置であって、
前記検査装置は、
前記基板上の複数の重畳パターンに放射を投影する放射プロジェクタ、
前記基板の表面で反射した放射ビームの0次および±n次回折次数(n≧1)を検出する瞳面に配置されたディテクタ、および
n次回折次数からのデータに基づき、前記複数の重畳パターンの間のオーバーレイエラーを計算し、かつ、0次回折次数からのデータに基づき、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するするデータ処理ユニット
を備え、
前記±n次回折次数は±1次回折次数であり、
前記所定の閾値I thr は、キャリブレーション基板を用いたモデリングまたはキャリブレーションを用いて決定された値である、リソグラフィ装置。
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US11/526,243 US7573584B2 (en) | 2006-09-25 | 2006-09-25 | Method and apparatus for angular-resolved spectroscopic lithography characterization |
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EP1903397A3 (en) | 2009-07-08 |
EP1903397A2 (en) | 2008-03-26 |
TW200821770A (en) | 2008-05-16 |
US7573584B2 (en) | 2009-08-11 |
SG170759A1 (en) | 2011-05-30 |
US20080074666A1 (en) | 2008-03-27 |
CN101154055A (zh) | 2008-04-02 |
TWI371662B (en) | 2012-09-01 |
KR100923543B1 (ko) | 2009-10-27 |
KR20080027748A (ko) | 2008-03-28 |
JP4555847B2 (ja) | 2010-10-06 |
EP1903397B1 (en) | 2012-07-25 |
SG141384A1 (en) | 2008-04-28 |
CN101154055B (zh) | 2010-11-24 |
JP2010251798A (ja) | 2010-11-04 |
JP2008109104A (ja) | 2008-05-08 |
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