JP4555847B2 - 角度分解分光リソグラフィキャラクタライゼイション方法およびデバイス - Google Patents
角度分解分光リソグラフィキャラクタライゼイション方法およびデバイス Download PDFInfo
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- JP4555847B2 JP4555847B2 JP2007240597A JP2007240597A JP4555847B2 JP 4555847 B2 JP4555847 B2 JP 4555847B2 JP 2007240597 A JP2007240597 A JP 2007240597A JP 2007240597 A JP2007240597 A JP 2007240597A JP 4555847 B2 JP4555847 B2 JP 4555847B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Environmental & Geological Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
Claims (8)
- 基板の性質を測定する方法であって、
放射プロジェクタを用いて基板上に放射を投影すること、および
反射した放射の0次および±n次(但しn≧1)を検出すること、
を含み、
前記反射放射は測定すべき性質を示しており、
前記放射は、複数の重畳パターン上に投影され、ディテクタが、前記複数の重畳パターンの間のオーバーレイエラーを検出し、
n次回折次数からのデータは、前記オーバーレイエラーを測定するために使用され、
0次回折次数からのデータは、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するように、エラーチェックとして使用される、
方法。 - 前記±n次回折次数は±1次回折次数である、請求項1に記載の方法。
- 基板の性質を測定するスキャトロメータであって、
基板上の複数の重畳パターンに放射を投影する放射プロジェクタ、
基板の表面で反射した放射ビームの0次および±n次回折次数(但しn≧1)を検出するディテクタ、および
n次回折次数からのデータに基づき、前記複数の重畳パターンの間のオーバーレイエラーを計算し、かつ、0次回折次数からのデータに基づき、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するデータ処理ユニット、
を備えるスキャトロメータ。 - 前記±n次回折次数は±1次回折次数である、請求項3に記載のスキャトロメータ。
- 検査装置を備えるリソグラフィ装置であって、前記検査装置は、
基板上の複数の重畳パターンに放射を投影する放射プロジェクタ、
基板の表面から反射した放射ビームの0次および±n次回折次数(n≧1)を検出するディテクタ、および
n次回折次数からのデータに基づき、前記複数の重畳パターンの間のオーバーレイエラーを計算し、かつ、0次回折次数からのデータに基づき、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するデータ処理ユニット
を備える、リソグラフィ装置。 - 前記±n次回折次数は±1次回折次数である、請求項5に記載のリソグラフィ装置。
- 放射ビームを調節する照明システム、
放射ビームの断面にパターンを付与するパターニングデバイスを支持するサポート、
基板を保持する基板テーブル、
基板のターゲット部分にパターン付与された放射ビームを投影する投影システム、および
検査装置、
を備えるリソグラフィ装置であって、
前記検査装置は、
前記基板上の複数の重畳パターンに放射を投影する放射プロジェクタ、
前記基板の表面で反射した放射ビームの0次および±n次回折次数(n≧1)を検出するディテクタ、および
n次回折次数からのデータに基づき、前記複数の重畳パターンの間のオーバーレイエラーを計算し、かつ、0次回折次数からのデータに基づき、下記式(1);
ΔI 0 =I 0+ −I 0− (1)、
(式(1)中、I 0+ は所定の+dのバイアスを有する重なり合う回折格子の0次の強度を示し、I 0− は所定の−dのバイアスを有する重なり合う回折格子の0次の強度を示す。)で表される回折強度の差ΔI 0 が、予め決定された所定の閾値I thr を上回る場合に、該回折強度の差ΔI 0 が大きいと判断し、該回折強度の差ΔI 0 が、該所定の閾値I thr を下回る場合に、オーバーレイ測定は有効であると判断するするデータ処理ユニット
を備える、リソグラフィ装置。 - 前記±n次回折次数は±1次回折次数である、請求項7に記載のリソグラフィ装置。
Applications Claiming Priority (1)
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US11/526,243 US7573584B2 (en) | 2006-09-25 | 2006-09-25 | Method and apparatus for angular-resolved spectroscopic lithography characterization |
Related Child Applications (1)
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JP2010161443A Division JP4719817B2 (ja) | 2006-09-25 | 2010-07-16 | 基板の性質を測定する方法、スキャトロメータ、及び、リソグラフィ装置 |
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JP2008109104A JP2008109104A (ja) | 2008-05-08 |
JP4555847B2 true JP4555847B2 (ja) | 2010-10-06 |
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JP2010161443A Active JP4719817B2 (ja) | 2006-09-25 | 2010-07-16 | 基板の性質を測定する方法、スキャトロメータ、及び、リソグラフィ装置 |
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Country Status (7)
Country | Link |
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US (1) | US7573584B2 (ja) |
EP (1) | EP1903397B1 (ja) |
JP (2) | JP4555847B2 (ja) |
KR (1) | KR100923543B1 (ja) |
CN (1) | CN101154055B (ja) |
SG (2) | SG170759A1 (ja) |
TW (1) | TWI371662B (ja) |
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2006
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- 2007-09-14 SG SG200708751-3A patent/SG141384A1/en unknown
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- 2007-09-18 JP JP2007240597A patent/JP4555847B2/ja active Active
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US20060197951A1 (en) * | 2005-03-01 | 2006-09-07 | Kla-Tencor Technologies Corporation | Diffraction order controlled overlay metrology |
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EP1903397B1 (en) | 2012-07-25 |
KR100923543B1 (ko) | 2009-10-27 |
TW200821770A (en) | 2008-05-16 |
US20080074666A1 (en) | 2008-03-27 |
CN101154055B (zh) | 2010-11-24 |
KR20080027748A (ko) | 2008-03-28 |
CN101154055A (zh) | 2008-04-02 |
EP1903397A3 (en) | 2009-07-08 |
JP2010251798A (ja) | 2010-11-04 |
EP1903397A2 (en) | 2008-03-26 |
SG141384A1 (en) | 2008-04-28 |
JP4719817B2 (ja) | 2011-07-06 |
US7573584B2 (en) | 2009-08-11 |
SG170759A1 (en) | 2011-05-30 |
TWI371662B (en) | 2012-09-01 |
JP2008109104A (ja) | 2008-05-08 |
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