KR20080027748A - 각도-분해 분광 리소그래피 특성화를 위한 방법 및 장치 - Google Patents
각도-분해 분광 리소그래피 특성화를 위한 방법 및 장치 Download PDFInfo
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- KR20080027748A KR20080027748A KR1020070096772A KR20070096772A KR20080027748A KR 20080027748 A KR20080027748 A KR 20080027748A KR 1020070096772 A KR1020070096772 A KR 1020070096772A KR 20070096772 A KR20070096772 A KR 20070096772A KR 20080027748 A KR20080027748 A KR 20080027748A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
Description
Claims (13)
- 기판의 특성을 측정하는 방법에 있어서:방사선 투영기를 이용하여 기판 상에 방사선을 투영하는 단계; 및반사된 방사선의 0 차 및 ±n 차 회절을 검출하는 단계를 포함하여 이루어지고, n > 1이며, 상기 반사된 방사선은 측정될 특성을 나타내는 것을 특징으로 하는 기판 특성 측정 방법.
- 제 1 항에 있어서,상기 방사선은 복수의 중첩 패턴(superimposed pattern)들 상에 투영되고, 검출기가 상기 복수의 중첩 패턴들 간의 오버레이 오차를 검출하는 것을 특징으로 하는 기판 특성 측정 방법.
- 제 2 항에 있어서,상기 오버레이 오차를 측정하기 위해 1 차 회절로부터의 데이터가 사용되고, 오차 검사 기준(check)으로서 0 차 회절로부터의 데이터가 사용되는 것을 특징으로 하는 기판 특성 측정 방법.
- 제 1 항에 있어서,상기 ±n 차 회절들은 ±1 차 회절들인 것을 특징으로 하는 기판 특성 측정 방법.
- 기판의 특성을 측정하도록 구성된 스케터로미터(scatterometer)에 있어서:상기 기판 상의 복수의 중첩 패턴들 상으로 방사선을 투영하도록 구성된 방사선 투영기;상기 기판의 표면으로부터 반사된 상기 방사선 빔의 0 차 및 n > 1인 ±n 차 회절을 검출하도록 구성된 검출기; 및상기 0 차 및 ±n 차 회절에 기초하여 상기 복수의 중첩 패턴들 간의 오버레이 오차를 계산하도록 구성된 데이터 처리 유닛(data handling unit)을 포함하여 이루어지는 스케터로미터.
- 제 5 항에 있어서,상기 오버레이 오차를 측정하기 위해 1 차 회절로부터의 데이터가 사용되고, 오차 검사 기준으로서 0 차 회절로부터의 데이터가 사용되는 것을 특징으로 하는 스케터로미터.
- 제 5 항에 있어서,상기 ±n 차 회절들은 ±1 차 회절들인 것을 특징으로 하는 스케터로미터.
- 검사 장치를 포함한 리소그래피 장치에 있어서, 상기 검사 장치는기판 상의 복수의 중첩 패턴들 상으로 방사선을 투영하도록 구성된 방사선 투영기;상기 기판의 표면으로부터 반사된 상기 방사선 빔의 0 차 및 n > 1인 ±n 차 회절을 검출하도록 구성된 검출기; 및상기 0 차 및 ±n 차 회절에 기초하여 상기 복수의 중첩 패턴들 간의 오버레이 오차를 계산하도록 구성된 데이터 처리 유닛을 포함하여 이루어지는 리소그래피 장치.
- 제 8 항에 있어서,상기 오버레이 오차를 측정하기 위해 1 차 회절로부터의 데이터가 사용되고, 오차 검사 기준으로서 0 차 회절로부터의 데이터가 사용되는 것을 특징으로 하는 리소그래피 장치.
- 제 8 항에 있어서,상기 ±n 차 회절들은 ±1 차 회절들인 것을 특징으로 하는 리소그래피 장치.
- 리소그래피 장치에 있어서:방사선 빔을 컨디셔닝(condition)하도록 구성된 조명 시스템;상기 방사선 빔의 단면에 패턴을 부여하도록 구성되는 패터닝 디바이스를 지 지하도록 구성된 지지체;기판을 유지하도록 구성된 기판 테이블;상기 기판의 타겟부 상에 상기 패터닝된 방사선 빔을 투영하도록 구성된 투영 시스템; 및검사 장치를 포함하여 이루어지고, 상기 검사 장치는상기 기판 상의 복수의 중첩 패턴들 상으로 방사선을 투영하도록 구성된 방사선 투영기;상기 기판의 표면으로부터 반사된 상기 방사선 빔의 0 차 및 n > 1인 ±n 차 회절을 검출하도록 구성된 검출기; 및상기 0 차 및 ±n 차 회절에 기초하여 상기 복수의 중첩 패턴들 간의 오버레이 오차를 계산하도록 구성된 데이터 처리 유닛을 포함하여 이루어지는 리소그래피 장치.
- 제 11 항에 있어서,상기 오버레이 오차를 측정하기 위해 1 차 회절로부터의 데이터가 사용되고, 오차 검사 기준으로서 0 차 회절로부터의 데이터가 사용되는 것을 특징으로 하는 리소그래피 장치.
- 제 11 항에 있어서,상기 ±n 차 회절들은 ±1 차 회절들인 것을 특징으로 하는 리소그래피 장 치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/526,243 | 2006-09-25 | ||
US11/526,243 US7573584B2 (en) | 2006-09-25 | 2006-09-25 | Method and apparatus for angular-resolved spectroscopic lithography characterization |
Publications (2)
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KR20080027748A true KR20080027748A (ko) | 2008-03-28 |
KR100923543B1 KR100923543B1 (ko) | 2009-10-27 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020070096772A KR100923543B1 (ko) | 2006-09-25 | 2007-09-21 | 각도-분해 분광 리소그래피 특성화를 위한 방법 및 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7573584B2 (ko) |
EP (1) | EP1903397B1 (ko) |
JP (2) | JP4555847B2 (ko) |
KR (1) | KR100923543B1 (ko) |
CN (1) | CN101154055B (ko) |
SG (2) | SG170759A1 (ko) |
TW (1) | TWI371662B (ko) |
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- 2006-09-25 US US11/526,243 patent/US7573584B2/en active Active
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US8823922B2 (en) | 2008-06-26 | 2014-09-02 | Asml Netherlands B.V. | Overlay measurement apparatus, lithographic apparatus and device manufacturing method using such overlay measurement apparatus |
WO2015009739A1 (en) * | 2013-07-18 | 2015-01-22 | Kla-Tencor Corporation | Illumination configurations for scatterometry measurements |
US9719920B2 (en) | 2013-07-18 | 2017-08-01 | Kla-Tencor Corporation | Scatterometry system and method for generating non-overlapping and non-truncated diffraction images |
US10209183B2 (en) | 2013-07-18 | 2019-02-19 | Kla-Tencor Corporation | Scatterometry system and method for generating non-overlapping and non-truncated diffraction images |
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Publication number | Publication date |
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EP1903397B1 (en) | 2012-07-25 |
JP4719817B2 (ja) | 2011-07-06 |
CN101154055A (zh) | 2008-04-02 |
CN101154055B (zh) | 2010-11-24 |
US20080074666A1 (en) | 2008-03-27 |
SG141384A1 (en) | 2008-04-28 |
JP2010251798A (ja) | 2010-11-04 |
SG170759A1 (en) | 2011-05-30 |
TWI371662B (en) | 2012-09-01 |
EP1903397A3 (en) | 2009-07-08 |
US7573584B2 (en) | 2009-08-11 |
JP2008109104A (ja) | 2008-05-08 |
TW200821770A (en) | 2008-05-16 |
EP1903397A2 (en) | 2008-03-26 |
KR100923543B1 (ko) | 2009-10-27 |
JP4555847B2 (ja) | 2010-10-06 |
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