JP4712352B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4712352B2
JP4712352B2 JP2004328446A JP2004328446A JP4712352B2 JP 4712352 B2 JP4712352 B2 JP 4712352B2 JP 2004328446 A JP2004328446 A JP 2004328446A JP 2004328446 A JP2004328446 A JP 2004328446A JP 4712352 B2 JP4712352 B2 JP 4712352B2
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Japan
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film
forming
semiconductor
insulating film
semiconductor film
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JP2004328446A
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Japanese (ja)
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JP2005167229A (ja
JP2005167229A5 (enExample
Inventor
洋平 神野
厳 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004328446A priority Critical patent/JP4712352B2/ja
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Publication of JP2005167229A5 publication Critical patent/JP2005167229A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004328446A 2003-11-14 2004-11-12 発光装置の作製方法 Expired - Fee Related JP4712352B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004328446A JP4712352B2 (ja) 2003-11-14 2004-11-12 発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003386022 2003-11-14
JP2003386022 2003-11-14
JP2004328446A JP4712352B2 (ja) 2003-11-14 2004-11-12 発光装置の作製方法

Publications (3)

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JP2005167229A JP2005167229A (ja) 2005-06-23
JP2005167229A5 JP2005167229A5 (enExample) 2007-12-20
JP4712352B2 true JP4712352B2 (ja) 2011-06-29

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JP2004328446A Expired - Fee Related JP4712352B2 (ja) 2003-11-14 2004-11-12 発光装置の作製方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007043113A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置、半導体装置の作製方法
US8048473B2 (en) 2006-07-04 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP5314842B2 (ja) * 2006-08-25 2013-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5329784B2 (ja) * 2006-08-25 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5014347B2 (ja) * 2006-09-14 2012-08-29 パナソニック株式会社 表示装置
US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010143283A1 (ja) * 2009-06-10 2010-12-16 パイオニア株式会社 コンタクトホールの形成方法、半導体装置の製造方法及び半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP2821347B2 (ja) * 1993-10-12 1998-11-05 日本電気株式会社 電流制御型発光素子アレイ
JP4397439B2 (ja) * 1997-09-30 2010-01-13 株式会社半導体エネルギー研究所 半導体装置
JP3616584B2 (ja) * 2000-06-12 2005-02-02 鹿児島日本電気株式会社 パターン形成方法及びそれを用いた表示装置の製造方法
JP3980312B2 (ja) * 2001-09-26 2007-09-26 株式会社日立製作所 液晶表示装置およびその製造方法
JP3965562B2 (ja) * 2002-04-22 2007-08-29 セイコーエプソン株式会社 デバイスの製造方法、デバイス、電気光学装置及び電子機器

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JP2005167229A (ja) 2005-06-23

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