JP4700484B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4700484B2
JP4700484B2 JP2005355668A JP2005355668A JP4700484B2 JP 4700484 B2 JP4700484 B2 JP 4700484B2 JP 2005355668 A JP2005355668 A JP 2005355668A JP 2005355668 A JP2005355668 A JP 2005355668A JP 4700484 B2 JP4700484 B2 JP 4700484B2
Authority
JP
Japan
Prior art keywords
layer
region
wettability
light
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005355668A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006196879A (ja
JP2006196879A5 (cg-RX-API-DMAC7.html
Inventor
将文 森末
慎志 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005355668A priority Critical patent/JP4700484B2/ja
Publication of JP2006196879A publication Critical patent/JP2006196879A/ja
Publication of JP2006196879A5 publication Critical patent/JP2006196879A5/ja
Application granted granted Critical
Publication of JP4700484B2 publication Critical patent/JP4700484B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005355668A 2004-12-17 2005-12-09 半導体装置の作製方法 Expired - Fee Related JP4700484B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005355668A JP4700484B2 (ja) 2004-12-17 2005-12-09 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004366430 2004-12-17
JP2004366430 2004-12-17
JP2005355668A JP4700484B2 (ja) 2004-12-17 2005-12-09 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006196879A JP2006196879A (ja) 2006-07-27
JP2006196879A5 JP2006196879A5 (cg-RX-API-DMAC7.html) 2009-01-15
JP4700484B2 true JP4700484B2 (ja) 2011-06-15

Family

ID=36802663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005355668A Expired - Fee Related JP4700484B2 (ja) 2004-12-17 2005-12-09 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4700484B2 (cg-RX-API-DMAC7.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5110785B2 (ja) * 2004-10-08 2012-12-26 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101161189B1 (ko) * 2006-07-31 2012-07-02 닛뽕소다 가부시키가이샤 막 물성 개선 처리 방법을 사용하여 이루어지는 유기 박막의 제조 방법
JP5371240B2 (ja) * 2006-12-27 2013-12-18 株式会社半導体エネルギー研究所 配線の作製方法
JP5332145B2 (ja) * 2007-07-18 2013-11-06 株式会社リコー 積層構造体、電子素子、電子素子アレイ及び表示装置
JP2009026901A (ja) * 2007-07-18 2009-02-05 Ricoh Co Ltd 積層構造体、電子素子、電子素子アレイ及び表示装置
JP2009026900A (ja) * 2007-07-18 2009-02-05 Ricoh Co Ltd 積層構造体、電子素子及びそれらの製造方法、表示装置
JP2009038185A (ja) * 2007-08-01 2009-02-19 Konica Minolta Holdings Inc 導電膜パターンの形成方法、および配線基板、表示装置
JP2009054949A (ja) * 2007-08-29 2009-03-12 Seiko Instruments Inc 金属配線形成方法
JP2010157532A (ja) * 2008-12-26 2010-07-15 Hitachi Ltd 半導体装置の製造方法および半導体装置
KR101107160B1 (ko) 2009-07-10 2012-01-25 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101107158B1 (ko) * 2009-07-10 2012-01-25 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
US8617993B2 (en) * 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
JP2013105797A (ja) * 2011-11-11 2013-05-30 Fujifilm Corp パターン形成方法
JP2014107394A (ja) * 2012-11-27 2014-06-09 Toyota Motor Corp 金属化フィルムコンデンサ
KR101605884B1 (ko) 2014-04-21 2016-03-24 한국과학기술원 레이저를 이용한 박막 트랜지스터 제조 방법
EP3920238B1 (en) * 2019-02-01 2024-02-14 FUJIFILM Corporation Organic thin-film transistor and method for producing organic thin-film transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3870562B2 (ja) * 1998-07-16 2007-01-17 セイコーエプソン株式会社 パターン形成方法、およびパターン形成基板の製造方法
JP4035968B2 (ja) * 2000-06-30 2008-01-23 セイコーエプソン株式会社 導電膜パターンの形成方法
JP2003076004A (ja) * 2001-09-04 2003-03-14 Fuji Photo Film Co Ltd パターン形成方法
JP2004200365A (ja) * 2002-12-18 2004-07-15 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子
JP4557755B2 (ja) * 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法

Also Published As

Publication number Publication date
JP2006196879A (ja) 2006-07-27

Similar Documents

Publication Publication Date Title
US7687326B2 (en) Semiconductor device and manufacturing method thereof
US7635889B2 (en) Semiconductor device, electronic device, and method of manufacturing semiconductor device
JP4777078B2 (ja) 半導体装置の作製方法
US7582904B2 (en) Semiconductor device, display device and method for manufacturing thereof, and television device
US7985677B2 (en) Method of manufacturing semiconductor device
JP5210594B2 (ja) 半導体装置の作製方法
JP5707373B2 (ja) 液晶表示装置
US8158517B2 (en) Method for manufacturing wiring substrate, thin film transistor, display device and television device
US7470604B2 (en) Method for manufacturing display device
JP4700484B2 (ja) 半導体装置の作製方法
JP5110785B2 (ja) 表示装置の作製方法
JP4854994B2 (ja) 配線基板の作製方法及び薄膜トランジスタの作製方法
JP4845491B2 (ja) 半導体装置の作製方法
JP4777203B2 (ja) 半導体装置
JP5116212B2 (ja) 薄膜トランジスタの作製方法
JP5171003B2 (ja) 半導体装置
JP5089036B2 (ja) 半導体装置の作製方法及び発光装置の作製方法
JP4879496B2 (ja) パターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081120

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081120

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100817

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100907

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110222

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110304

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140311

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees