JP4695902B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP4695902B2
JP4695902B2 JP2005080345A JP2005080345A JP4695902B2 JP 4695902 B2 JP4695902 B2 JP 4695902B2 JP 2005080345 A JP2005080345 A JP 2005080345A JP 2005080345 A JP2005080345 A JP 2005080345A JP 4695902 B2 JP4695902 B2 JP 4695902B2
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JP
Japan
Prior art keywords
photoelectric conversion
conversion unit
film
forming
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005080345A
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English (en)
Japanese (ja)
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JP2006261596A (ja
JP2006261596A5 (https=
Inventor
茂 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005080345A priority Critical patent/JP4695902B2/ja
Priority to US11/368,511 priority patent/US7259361B2/en
Publication of JP2006261596A publication Critical patent/JP2006261596A/ja
Publication of JP2006261596A5 publication Critical patent/JP2006261596A5/ja
Application granted granted Critical
Publication of JP4695902B2 publication Critical patent/JP4695902B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2005080345A 2005-03-18 2005-03-18 固体撮像装置の製造方法 Expired - Fee Related JP4695902B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005080345A JP4695902B2 (ja) 2005-03-18 2005-03-18 固体撮像装置の製造方法
US11/368,511 US7259361B2 (en) 2005-03-18 2006-03-07 Producing method for solid-state image pickup device including formation of a carrier accumulating region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005080345A JP4695902B2 (ja) 2005-03-18 2005-03-18 固体撮像装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011002866A Division JP5247829B2 (ja) 2011-01-11 2011-01-11 固体撮像装置及びその製造方法、並びに、カメラ

Publications (3)

Publication Number Publication Date
JP2006261596A JP2006261596A (ja) 2006-09-28
JP2006261596A5 JP2006261596A5 (https=) 2008-05-01
JP4695902B2 true JP4695902B2 (ja) 2011-06-08

Family

ID=37009342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005080345A Expired - Fee Related JP4695902B2 (ja) 2005-03-18 2005-03-18 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US7259361B2 (https=)
JP (1) JP4695902B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261597A (ja) * 2005-03-18 2006-09-28 Canon Inc 固体撮像装置、その製造方法及びカメラ
JP5110820B2 (ja) 2006-08-02 2012-12-26 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム
JP5305622B2 (ja) * 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
JP5110831B2 (ja) 2006-08-31 2012-12-26 キヤノン株式会社 光電変換装置及び撮像システム
JP5305623B2 (ja) * 2007-07-20 2013-10-02 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
WO2010122657A1 (ja) 2009-04-24 2010-10-28 ルネサスエレクトロニクス株式会社 固体撮像装置およびその製造方法
US8686338B2 (en) * 2011-08-03 2014-04-01 Symbol Technologies, Inc. Method and apparatus for controlling output of the solid-state imager in a barcode reader
TWI649862B (zh) * 2014-11-17 2019-02-01 國立大學法人東北大學 Light sensor and signal reading method thereof, solid-state imaging device and signal reading method thereof
WO2020261817A1 (ja) * 2019-06-25 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2720478B2 (ja) * 1988-10-18 1998-03-04 株式会社ニコン 縦型オーバーフロードレインを備える固体撮像素子を用いた測光装置
KR100477788B1 (ko) * 1999-12-28 2005-03-22 매그나칩 반도체 유한회사 커패시터가 접속된 포토다이오드를 갖는 씨모스이미지센서 및 그 제조방법
JP4502278B2 (ja) * 2004-02-27 2010-07-14 国立大学法人東北大学 固体撮像装置、ラインセンサ、光センサおよび固体撮像装置の動作方法
JP4497366B2 (ja) * 2005-02-04 2010-07-07 国立大学法人東北大学 光センサおよび固体撮像装置

Also Published As

Publication number Publication date
US7259361B2 (en) 2007-08-21
JP2006261596A (ja) 2006-09-28
US20060208159A1 (en) 2006-09-21

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