JP4693257B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4693257B2
JP4693257B2 JP2001045840A JP2001045840A JP4693257B2 JP 4693257 B2 JP4693257 B2 JP 4693257B2 JP 2001045840 A JP2001045840 A JP 2001045840A JP 2001045840 A JP2001045840 A JP 2001045840A JP 4693257 B2 JP4693257 B2 JP 4693257B2
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Japan
Prior art keywords
island
gate electrode
semiconductor layer
shaped semiconductor
region
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Expired - Fee Related
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JP2001045840A
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Japanese (ja)
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JP2002252352A5 (OSRAM
JP2002252352A (ja
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001045840A priority Critical patent/JP4693257B2/ja
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Publication of JP2002252352A5 publication Critical patent/JP2002252352A5/ja
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  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001045840A 2001-02-21 2001-02-21 半導体装置の作製方法 Expired - Fee Related JP4693257B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001045840A JP4693257B2 (ja) 2001-02-21 2001-02-21 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001045840A JP4693257B2 (ja) 2001-02-21 2001-02-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002252352A JP2002252352A (ja) 2002-09-06
JP2002252352A5 JP2002252352A5 (OSRAM) 2009-01-08
JP4693257B2 true JP4693257B2 (ja) 2011-06-01

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ID=18907563

Family Applications (1)

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JP2001045840A Expired - Fee Related JP4693257B2 (ja) 2001-02-21 2001-02-21 半導体装置の作製方法

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JP (1) JP4693257B2 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737442B2 (en) 2005-06-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8149346B2 (en) * 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
CN114156337A (zh) * 2020-09-08 2022-03-08 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4159713B2 (ja) * 1998-11-25 2008-10-01 株式会社半導体エネルギー研究所 半導体装置
JP4531175B2 (ja) * 1998-12-03 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4402202B2 (ja) * 1999-06-29 2010-01-20 株式会社半導体エネルギー研究所 反射型半導体表示装置

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Publication number Publication date
JP2002252352A (ja) 2002-09-06

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