JP4686830B2 - 固体撮像素子及びその駆動方法 - Google Patents

固体撮像素子及びその駆動方法 Download PDF

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Publication number
JP4686830B2
JP4686830B2 JP2000257463A JP2000257463A JP4686830B2 JP 4686830 B2 JP4686830 B2 JP 4686830B2 JP 2000257463 A JP2000257463 A JP 2000257463A JP 2000257463 A JP2000257463 A JP 2000257463A JP 4686830 B2 JP4686830 B2 JP 4686830B2
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Japan
Prior art keywords
gate
overflow
electrode
transfer
layer
Prior art date
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Expired - Fee Related
Application number
JP2000257463A
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English (en)
Japanese (ja)
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JP2002076318A (ja
JP2002076318A5 (enExample
Inventor
賢 吉原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000257463A priority Critical patent/JP4686830B2/ja
Priority to TW090119935A priority patent/TW517386B/zh
Priority to US09/931,464 priority patent/US6512254B2/en
Publication of JP2002076318A publication Critical patent/JP2002076318A/ja
Publication of JP2002076318A5 publication Critical patent/JP2002076318A5/ja
Application granted granted Critical
Publication of JP4686830B2 publication Critical patent/JP4686830B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2000257463A 2000-08-28 2000-08-28 固体撮像素子及びその駆動方法 Expired - Fee Related JP4686830B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000257463A JP4686830B2 (ja) 2000-08-28 2000-08-28 固体撮像素子及びその駆動方法
TW090119935A TW517386B (en) 2000-08-28 2001-08-14 Solid-state image pickup device
US09/931,464 US6512254B2 (en) 2000-08-28 2001-08-17 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000257463A JP4686830B2 (ja) 2000-08-28 2000-08-28 固体撮像素子及びその駆動方法

Publications (3)

Publication Number Publication Date
JP2002076318A JP2002076318A (ja) 2002-03-15
JP2002076318A5 JP2002076318A5 (enExample) 2007-03-08
JP4686830B2 true JP4686830B2 (ja) 2011-05-25

Family

ID=18745916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000257463A Expired - Fee Related JP4686830B2 (ja) 2000-08-28 2000-08-28 固体撮像素子及びその駆動方法

Country Status (3)

Country Link
US (1) US6512254B2 (enExample)
JP (1) JP4686830B2 (enExample)
TW (1) TW517386B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1341377B1 (en) * 2002-02-27 2018-04-11 Canon Kabushiki Kaisha Signal processing device for image pickup apparatus
US7492404B2 (en) * 2004-08-27 2009-02-17 Eastman Kodak Company Fast flush structure for solid-state image sensors
US20080195116A1 (en) * 2007-02-09 2008-08-14 Karim Mansour Circumcision clamp and surgical kit
JP7765306B2 (ja) * 2022-02-24 2025-11-06 浜松ホトニクス株式会社 固体撮像素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63296267A (ja) * 1987-05-27 1988-12-02 Mitsubishi Electric Corp 電荷転送装置
JP2666928B2 (ja) * 1987-07-13 1997-10-22 株式会社東芝 電荷転送素子の出力検出器
JPH084136B2 (ja) * 1987-12-22 1996-01-17 日本電気株式会社 電荷転送装置
JPH05251480A (ja) * 1992-03-04 1993-09-28 Sony Corp 電荷電圧変換装置
JPH06303527A (ja) * 1993-04-09 1994-10-28 Sony Corp 電荷結合素子
KR950002084A (ko) * 1993-06-22 1995-01-04 오가 노리오 전하전송장치

Also Published As

Publication number Publication date
US6512254B2 (en) 2003-01-28
US20020060329A1 (en) 2002-05-23
JP2002076318A (ja) 2002-03-15
TW517386B (en) 2003-01-11

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