JP4684029B2 - 固体撮像素子及びその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
- H04N25/136—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements using complementary colours
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
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- Physics & Mathematics (AREA)
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
Description
の上層に着色粒子を堆積して形成された着色膜と、前記着色粒子の間の隙間に充填された着色されている樹脂とを有し、且つ、前記カラーフィルタが、当該固体撮像素子の有効画素領域の内側及び外側に形成されており、前記有効画素領域の外側に位置する前記カラーフィルタにおいて、前記樹脂が、前記着色粒子の色に対して補色又は対照色となる色で着色されていることを特徴とする。
以下、本発明の実施の形態における固体撮像素子及び固体撮像素子の製造方法について、図1及び図2を参照しながら説明する。最初に、本実施の形態における固体撮像素子の構成について図1を用いて説明する。図1は、本発明の実施の形態における固体撮像素子の構成の一部を示す部分断面図である。なお、図1においては断面に現れた線のみを図示している。
2 フォトダイオード
3 転送電極
4 絶縁膜
5 第1の平坦膜
6 層内マイクロレンズ
7 第2の平坦膜
8 着色膜
8a 着色粒子が緑色の着色膜
8b 着色粒子が青色の着色膜
8c 着色粒子が赤色の着色膜
9 隙間に充填される樹脂
10 カラーフィルタ
10a カラーフィルタ(G)
10b カラーフィルタ(B)
10c カラーフィルタ(R)
11 カラーフィルタアレイ
12 着色粒子
13 有効画素領域
14 有効画素領域の外側に形成された遮光領域
15 有効画素領域内に格子状に形成された遮光領域
Claims (7)
- 半導体基板上にマトリクス状に形成された複数の受光素子と、前記複数の受光素子それぞれに対応する複数のカラーフィルタとを備える固体撮像素子であって、
前記カラーフィルタは、前記複数の受光素子の上層に着色粒子を堆積して形成された着色膜と、前記着色粒子の間の隙間に充填された着色されている樹脂とを有し、且つ、
前記カラーフィルタが、当該固体撮像素子の有効画素領域の内側及び外側に形成されており、前記有効画素領域の外側に位置する前記カラーフィルタにおいて、前記樹脂が、前記着色粒子の色に対して補色又は対照色となる色で着色されていることを特徴とする固体撮像素子。 - 半導体基板上にマトリクス状に形成された複数の受光素子と、前記複数の受光素子それぞれに対応する複数のカラーフィルタとを備える固体撮像素子であって、
前記カラーフィルタは、前記複数の受光素子の上層に着色粒子を堆積して形成された着色膜と、前記着色粒子の間の隙間に充填された樹脂とを有し、
前記複数のカラーフィルタが、マトリクス状に配置されて、カラーフィルタアレイを形成しており、
前記カラーフィルタアレイは、隣り合う前記カラーフィルタ間の境界に沿って形成された格子状の遮光領域を有し、
前記遮光領域は、隣り合う前記カラーフィルタ間に着色粒子を堆積して形成された着色膜と、前記着色粒子の間の隙間に充填され、且つ、前記着色粒子の色に対して補色又は対照色となる色で着色された樹脂とを有していることを特徴とする固体撮像素子。 - 前記着色粒子が、顔料粒子及び染料粒子のうち少なくとも一種を含んでいる請求項1または2に記載の固体撮像素子。
- 半導体基板上にマトリクス状に形成された複数の受光素子と、前記複数の受光素子それぞれに対応する複数のカラーフィルタとを備える固体撮像素子の製造方法であって、
(a)前記複数のカラーフィルタそれぞれの形成領域に着色粒子を堆積させて着色膜を形成する工程と、
(b)前記着色粒子の間の隙間に、樹脂を充填する工程とを少なくとも有し、
前記(a)の工程において、蒸着、スパッタリング、及びイオンプレーティングのいずれかによって、前記着色粒子を前記形成領域に堆積させることを特徴とする固体撮像素子の製造方法。 - 前記着色粒子が、顔料粒子及び染料粒子のうち少なくとも一種を含んでいる請求項4に記載の固体撮像素子の製造方法。
- 前記(b)の工程において、前記着色膜の上に前記樹脂を塗布し、毛細管現象を利用して、塗布された樹脂を前記着色粒子の間の隙間に充填する請求項4または5に記載の固体撮像素子の製造方法。
- 前記(b)の工程において、前記着色膜の上に前記樹脂を塗布し、前記着色膜の内部と外部との間に圧力差を生じさせて、塗布された前記樹脂を前記着色粒子の間の隙間に充填する請求項4または5に記載の固体撮像素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005197975A JP4684029B2 (ja) | 2005-07-06 | 2005-07-06 | 固体撮像素子及びその製造方法 |
US11/480,048 US7576314B2 (en) | 2005-07-06 | 2006-06-30 | Solid-state imaging device and method for manufacturing the same |
CNA2006101054517A CN1893100A (zh) | 2005-07-06 | 2006-07-05 | 固体摄像元件及其制造方法 |
Applications Claiming Priority (1)
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JP2005197975A JP4684029B2 (ja) | 2005-07-06 | 2005-07-06 | 固体撮像素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007019189A JP2007019189A (ja) | 2007-01-25 |
JP4684029B2 true JP4684029B2 (ja) | 2011-05-18 |
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JP2005197975A Expired - Fee Related JP4684029B2 (ja) | 2005-07-06 | 2005-07-06 | 固体撮像素子及びその製造方法 |
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US (1) | US7576314B2 (ja) |
JP (1) | JP4684029B2 (ja) |
CN (1) | CN1893100A (ja) |
Families Citing this family (6)
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US7955764B2 (en) * | 2006-04-07 | 2011-06-07 | Micron Technology, Inc. | Methods to make sidewall light shields for color filter array |
US8023017B2 (en) * | 2007-01-08 | 2011-09-20 | United Microelectronics Corp. | Pattern of color filter array |
US7718533B2 (en) | 2007-05-08 | 2010-05-18 | Micron Technology, Inc. | Inverted variable resistance memory cell and method of making the same |
JP5027081B2 (ja) * | 2008-08-29 | 2012-09-19 | パナソニック株式会社 | カラー撮像デバイスおよびカラー撮像デバイスの製造方法 |
JP2011054911A (ja) * | 2009-09-04 | 2011-03-17 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
US10983339B2 (en) * | 2016-08-09 | 2021-04-20 | Sony Corporation | Solid-state imaging element, pupil correction method for solid-state imaging element, imaging device, and information processing device |
Citations (2)
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JP2001271036A (ja) * | 2000-03-23 | 2001-10-02 | Eastman Kodak Co | カラーフィルターアレイの製造方法 |
JP2002314058A (ja) * | 2001-04-17 | 2002-10-25 | Sony Corp | 固体撮像素子およびその製造方法 |
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JPS5522763A (en) * | 1978-08-08 | 1980-02-18 | Dainippon Printing Co Ltd | Image recording material |
US4786148A (en) * | 1986-12-10 | 1988-11-22 | Canon Kabushiki Kaisha | Color filter having different primary color pigment densities, inter alia |
JPH02105571A (ja) * | 1988-10-14 | 1990-04-18 | Nec Corp | 固体撮像素子 |
JP2707787B2 (ja) * | 1990-03-20 | 1998-02-04 | セイコーエプソン株式会社 | 薄膜の形成方法および液晶装置用カラーフィルターの製造方法 |
JPH04342207A (ja) * | 1991-05-20 | 1992-11-27 | Seiko Epson Corp | カラーフィルター及びその製造方法 |
JPH09230131A (ja) * | 1996-02-21 | 1997-09-05 | Kansai Shin Gijutsu Kenkyusho:Kk | カラーフィルタ及びその製造方法 |
US7070106B2 (en) * | 1998-03-24 | 2006-07-04 | Metrologic Instruments, Inc. | Internet-based remote monitoring, configuration and service (RMCS) system capable of monitoring, configuring and servicing a planar laser illumination and imaging (PLIIM) based network |
CN100530758C (zh) * | 1998-03-17 | 2009-08-19 | 精工爱普生株式会社 | 薄膜构图的衬底及其表面处理 |
US6064528A (en) * | 1998-11-20 | 2000-05-16 | Eastman Kodak Company | Multiple laser array sources combined for use in a laser printer |
US7176446B1 (en) * | 1999-09-15 | 2007-02-13 | Zoran Corporation | Method and apparatus for distributing light onto electronic image sensors |
JP2003332547A (ja) * | 2002-05-16 | 2003-11-21 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
US20070153392A1 (en) * | 2005-01-21 | 2007-07-05 | Meritt Reynolds | Apparatus and method for illumination of light valves |
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2005
- 2005-07-06 JP JP2005197975A patent/JP4684029B2/ja not_active Expired - Fee Related
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2006
- 2006-06-30 US US11/480,048 patent/US7576314B2/en not_active Expired - Fee Related
- 2006-07-05 CN CNA2006101054517A patent/CN1893100A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001271036A (ja) * | 2000-03-23 | 2001-10-02 | Eastman Kodak Co | カラーフィルターアレイの製造方法 |
JP2002314058A (ja) * | 2001-04-17 | 2002-10-25 | Sony Corp | 固体撮像素子およびその製造方法 |
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Publication number | Publication date |
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JP2007019189A (ja) | 2007-01-25 |
CN1893100A (zh) | 2007-01-10 |
US7576314B2 (en) | 2009-08-18 |
US20070007443A1 (en) | 2007-01-11 |
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