JP4683241B2 - 枚葉式基板洗浄設備 - Google Patents
枚葉式基板洗浄設備 Download PDFInfo
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- JP4683241B2 JP4683241B2 JP2008261851A JP2008261851A JP4683241B2 JP 4683241 B2 JP4683241 B2 JP 4683241B2 JP 2008261851 A JP2008261851 A JP 2008261851A JP 2008261851 A JP2008261851 A JP 2008261851A JP 4683241 B2 JP4683241 B2 JP 4683241B2
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- 238000004140 cleaning Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims description 150
- 238000000034 method Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims 3
- 238000012546 transfer Methods 0.000 description 30
- 239000000126 substance Substances 0.000 description 16
- 239000012530 fluid Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005502 peroxidation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
Description
(実施の形態)
図1は、本発明による枚葉式基板洗浄設備の構成を示す図である。
100 ホールディングユニット
120、130 グリップ部材
148 シリンダ
150 動力伝達部材
152a、152b プーリ
154 ベルト
200 反転ユニット
300 昇降ユニット
Claims (7)
- 基板の洗浄工程が行われる工程チャンバと、
前記工程チャンバ内に設けられ、処理基板が載置される基板保持部材と、
前記工程チャンバ内の前記基板保持部材の一側に設けられ、基板をホールディングするホールディングユニット、前記ホールディングユニットを反転する反転ユニット及び前記反転ユニットを上下移動させる昇降ユニットを有する基板反転装置と、を含み、
前記ホールディングユニットは、
前記基板保持部材の上側に位置し、基板が反転される回転軸上で互いに反対方向に移動して基板をチャッキング/アンチャッキングするグリップ部材と、前記グリップ部材を駆動させる駆動部材と、を含み、
前記グリップ部材は、
前記基板の前記反転ユニット方向のエッジをチャッキングする第1グリップ部材と、前記基板の前記反転ユニットの反対方向のエッジをチャッキングする第2グリップ部材と、を含み、
前記駆動部材は、
ベースと、前記ベースの上面に前記回転軸方向に移動可能なように設けられ、前記第1グリップ部材と連結される第1ロッドと、前記ベースの下面に前記回転軸方向に移動可能なように設けられ、前記第2グリップ部材と連結される第2ロッドと、前記第1及び第2ロッドのうち何れか一つのロッドを直線往復運動させるシリンダと、前記第1及び第2ロッドのうち他の一つのロッドが何れか一つのロッドと反対方向に運動するように、前記シリンダの駆動力を伝達する動力伝達部材と、を含み、
前記ホールディングユニットは、
前記第1及び第2グリップ部材によってチャッキング/アンチャッキングされる基板が載置される保持部材をさらに含み、
前記保持部材は、
リング状の保持リングと、前記保持リングに設けられて基板を保持する複数の保持ピンと、を含む
ことを特徴とする枚葉式基板処理装置。 - 前記動力伝達部材は、
前記ベースの上面と下面を貫通して設けられる第1及び第2プーリと、前記第1及び第2プーリに巻かれるベルトと、前記ベルトに前記第1及び第2ロッドをそれぞれ連結する第1及び第2連結部材と、を含む
ことを特徴とする請求項1に記載の枚葉式基板洗浄設備。 - 前記第1グリップ部材は、
少なくとも1個の第1グリッパと、前記第1グリッパが設けられ、前記第1ロッドと連結される第1ブラケットと、を含む
ことを特徴とする請求項1に記載の枚葉式基板洗浄設備。 - 前記第2グリップ部材は、
少なくとも2個の第2グリッパと、前記第2グリッパが設けられ、前記第2ロッドと連結される第2ブラケットと、を含む
ことを特徴とする請求項3に記載の枚葉式基板洗浄設備。 - 前記第2ブラケットは、
前記保持部材の保持ピンに載置される基板の下に位置する
ことを特徴とする請求項4に記載の枚葉式基板洗浄設備。 - 前記第2ブラケットは、
前記保持部材の保持リングと同じ高さに位置する
ことを特徴とする請求項5に記載の枚葉式基板洗浄設備。 - 前記シリンダは、
前記第1ロッドを直線往復運動させるように前記ベースの上面に設けられる
ことを特徴とする請求項1に記載の枚葉式基板洗浄設備。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070102485A KR100901493B1 (ko) | 2007-10-11 | 2007-10-11 | 매엽식 기판 세정 설비 및 기판의 이면 세정 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009094515A JP2009094515A (ja) | 2009-04-30 |
JP4683241B2 true JP4683241B2 (ja) | 2011-05-18 |
Family
ID=40532994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008261851A Active JP4683241B2 (ja) | 2007-10-11 | 2008-10-08 | 枚葉式基板洗浄設備 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7775222B2 (ja) |
JP (1) | JP4683241B2 (ja) |
KR (1) | KR100901493B1 (ja) |
CN (1) | CN101409218B (ja) |
TW (1) | TWI376004B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009035343A1 (de) * | 2009-07-23 | 2011-01-27 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Reinigung von Substraten an einem Träger |
KR101256958B1 (ko) | 2010-04-29 | 2013-04-25 | 세메스 주식회사 | 기판 세정 장치 및 기판 세정 방법 |
JP5806811B2 (ja) * | 2010-10-01 | 2015-11-10 | 株式会社日立国際電気 | 基板処理装置、基板処理方法および半導体装置の製造方法 |
KR101394458B1 (ko) * | 2011-05-31 | 2014-05-14 | 세메스 주식회사 | 버퍼 유닛, 기판 처리 설비 그리고 기판 처리 방법 |
US9099510B2 (en) * | 2013-03-15 | 2015-08-04 | Genmark Automation, Inc. | Workpiece flipping mechanism for space-constrained environment |
KR102207397B1 (ko) * | 2014-07-31 | 2021-01-26 | 주식회사 케이씨텍 | 화학 기계적 연마 공정을 마친 웨이퍼의 반전 장치 및 이를 이용한 웨이퍼 처리 방법 |
CN106344177A (zh) * | 2016-08-29 | 2017-01-25 | 江苏艾拓生物技术有限公司 | 一种微创外科手术器具用洁具 |
KR101968488B1 (ko) * | 2016-11-24 | 2019-04-16 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
CN107583902A (zh) * | 2017-08-25 | 2018-01-16 | 武汉华星光电技术有限公司 | 用于清洗机的摇摆驱动机构的清洗机构及清洗机 |
CN111515155B (zh) * | 2020-06-08 | 2021-01-29 | 深圳市金业达电子有限公司 | Pcb印刷电路板的翻转式超声波清洗方法 |
CN114054419B (zh) * | 2021-11-17 | 2023-04-11 | 新美光(苏州)半导体科技有限公司 | 硅电极的清洗装置、清洗方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163493A (ja) * | 1992-11-20 | 1994-06-10 | Tokyo Electron Ltd | 洗浄処理装置 |
JP2004006853A (ja) * | 2003-04-30 | 2004-01-08 | Dainippon Screen Mfg Co Ltd | 基板処理方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3888608B2 (ja) * | 2001-04-25 | 2007-03-07 | 東京エレクトロン株式会社 | 基板両面処理装置 |
KR100413067B1 (ko) | 2001-09-28 | 2003-12-31 | 한국디엔에스 주식회사 | 반도체 제조 장비의 웨이퍼 세정 장비 |
JP2005175036A (ja) * | 2003-12-09 | 2005-06-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
KR20070093746A (ko) * | 2006-03-15 | 2007-09-19 | 삼성전자주식회사 | 반도체 기판의 반전 장치 및 이를 이용한 기판의 반전 방법 |
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2007
- 2007-10-11 KR KR1020070102485A patent/KR100901493B1/ko active IP Right Grant
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2008
- 2008-10-08 JP JP2008261851A patent/JP4683241B2/ja active Active
- 2008-10-08 CN CN2008101671008A patent/CN101409218B/zh active Active
- 2008-10-09 TW TW097138921A patent/TWI376004B/zh active
- 2008-10-10 US US12/287,517 patent/US7775222B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163493A (ja) * | 1992-11-20 | 1994-06-10 | Tokyo Electron Ltd | 洗浄処理装置 |
JP2004006853A (ja) * | 2003-04-30 | 2004-01-08 | Dainippon Screen Mfg Co Ltd | 基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
US7775222B2 (en) | 2010-08-17 |
US20090095328A1 (en) | 2009-04-16 |
CN101409218B (zh) | 2010-12-01 |
KR100901493B1 (ko) | 2009-06-08 |
KR20090037073A (ko) | 2009-04-15 |
JP2009094515A (ja) | 2009-04-30 |
CN101409218A (zh) | 2009-04-15 |
TWI376004B (en) | 2012-11-01 |
TW200921826A (en) | 2009-05-16 |
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