JP4683233B2 - 半導体ウェーハの製造方法 - Google Patents
半導体ウェーハの製造方法 Download PDFInfo
- Publication number
- JP4683233B2 JP4683233B2 JP2006537796A JP2006537796A JP4683233B2 JP 4683233 B2 JP4683233 B2 JP 4683233B2 JP 2006537796 A JP2006537796 A JP 2006537796A JP 2006537796 A JP2006537796 A JP 2006537796A JP 4683233 B2 JP4683233 B2 JP 4683233B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- wafer
- polishing
- water
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000004140 cleaning Methods 0.000 claims description 257
- 238000005498 polishing Methods 0.000 claims description 86
- 239000000126 substance Substances 0.000 claims description 80
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 31
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 12
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 12
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 170
- 239000002245 particle Substances 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000013078 crystal Substances 0.000 description 17
- 239000004744 fabric Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- 238000001035 drying Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005406 washing Methods 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000008119 colloidal silica Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000002649 leather substitute Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006537796A JP4683233B2 (ja) | 2004-09-30 | 2005-09-29 | 半導体ウェーハの製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004288178 | 2004-09-30 | ||
JP2004288178 | 2004-09-30 | ||
PCT/JP2005/017936 WO2006035865A1 (fr) | 2004-09-30 | 2005-09-29 | Procédé de fabrication de plaquettes semi-conductrices et plaquette semi-conductrice |
JP2006537796A JP4683233B2 (ja) | 2004-09-30 | 2005-09-29 | 半導体ウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006035865A1 JPWO2006035865A1 (ja) | 2008-05-15 |
JP4683233B2 true JP4683233B2 (ja) | 2011-05-18 |
Family
ID=36119010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006537796A Active JP4683233B2 (ja) | 2004-09-30 | 2005-09-29 | 半導体ウェーハの製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4683233B2 (fr) |
WO (1) | WO2006035865A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5680846B2 (ja) * | 2009-12-04 | 2015-03-04 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
JP6311446B2 (ja) * | 2014-05-19 | 2018-04-18 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP6432497B2 (ja) * | 2015-12-10 | 2018-12-05 | 信越半導体株式会社 | 研磨方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07283182A (ja) * | 1994-04-12 | 1995-10-27 | Nippon Steel Corp | 半導体基板の洗浄方法 |
JP2001326210A (ja) * | 2000-05-18 | 2001-11-22 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2002203824A (ja) * | 2000-12-28 | 2002-07-19 | Super Silicon Kenkyusho:Kk | ウエハ洗浄方法 |
JP2003022993A (ja) * | 2001-07-05 | 2003-01-24 | Sony Corp | 基板洗浄方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02100320A (ja) * | 1988-10-06 | 1990-04-12 | Fujitsu Ltd | シリコンウエハーの製造方法 |
JPH07263384A (ja) * | 1994-03-23 | 1995-10-13 | Mitsubishi Materials Corp | 半導体装置の製造方法 |
JP3225273B2 (ja) * | 1997-03-26 | 2001-11-05 | 株式会社スーパーシリコン研究所 | ウエハ基板の総合研磨装置 |
JP2004087666A (ja) * | 2002-08-26 | 2004-03-18 | Hitachi Cable Ltd | 半導体ウェハの洗浄方法 |
-
2005
- 2005-09-29 JP JP2006537796A patent/JP4683233B2/ja active Active
- 2005-09-29 WO PCT/JP2005/017936 patent/WO2006035865A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07283182A (ja) * | 1994-04-12 | 1995-10-27 | Nippon Steel Corp | 半導体基板の洗浄方法 |
JP2001326210A (ja) * | 2000-05-18 | 2001-11-22 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2002203824A (ja) * | 2000-12-28 | 2002-07-19 | Super Silicon Kenkyusho:Kk | ウエハ洗浄方法 |
JP2003022993A (ja) * | 2001-07-05 | 2003-01-24 | Sony Corp | 基板洗浄方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2006035865A1 (fr) | 2006-04-06 |
JPWO2006035865A1 (ja) | 2008-05-15 |
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