JP4664835B2 - 可変増幅器を備えた調整器構造 - Google Patents
可変増幅器を備えた調整器構造 Download PDFInfo
- Publication number
- JP4664835B2 JP4664835B2 JP2006045627A JP2006045627A JP4664835B2 JP 4664835 B2 JP4664835 B2 JP 4664835B2 JP 2006045627 A JP2006045627 A JP 2006045627A JP 2006045627 A JP2006045627 A JP 2006045627A JP 4664835 B2 JP4664835 B2 JP 4664835B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- input
- signal
- terminal
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003321 amplification Effects 0.000 claims description 59
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 59
- 238000005516 engineering process Methods 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000010897 surface acoustic wave method Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
- H03F3/45201—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/456—A scaled replica of a transistor being present in an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45024—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are cascode coupled transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45052—Indexing scheme relating to differential amplifiers the cascode stage of the cascode differential amplifier being controlled by a controlling signal, which controlling signal can also be the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45311—Indexing scheme relating to differential amplifiers the common gate stage of a cascode dif amp being implemented by multiple transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45398—Indexing scheme relating to differential amplifiers the AAC comprising a voltage generating circuit as bias circuit for the AAC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45544—Indexing scheme relating to differential amplifiers the IC comprising one or more capacitors, e.g. coupling capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
- Control Of Amplification And Gain Control (AREA)
Description
無線周波数入力信号を供給するための入力部と、利得の制御信号を供給するための入力部と、出力部とが備えられ、
供給電位端子と基準電位端子との間に電流経路が接続されており、
上記電流経路が、
第1端子にて上記基準電位端子に結合されている被制御経路と、可変増幅器の無線周波数入力信号を供給するための上記入力部に結合されている制御入力部とを有する増幅トランジスタと、
可変増幅器の制御信号を供給するための上記入力部に結合されている制御入力部と、第1端子にて上記出力部に結合されるとともに第2端子にて上記増幅トランジスタの第2端子に結合されている被制御経路とを有するカスコードトランジスタとを含んでいることを特徴とする可変増幅器によって達成する。
可変増幅器を備えた調整器構造であって、
第1補助トランジスタおよび第2補助トランジスタを含んだ補助電流経路が備えられ、
上記第1補助トランジスタの被制御経路と第2補助トランジスタの被制御経路とが直列回路を成し、
上記第1補助トランジスタの制御入力部が上記増幅トランジスタの制御入力部に接続されており、上記第2補助トランジスタの制御入力部が上記カスコードトランジスタの制御入力部に接続されており、
上記補助電流経路の出力端子が上記第2補助トランジスタの制御入力部に結合されてフィードバック経路を成し、
可変増幅器の利得の制御信号を供給するための上記入力部が、上記フィードバック経路に形成されていることを特徴とする調整器構造によって達成する。
2 カスコードトランジスタ
3 電気的負荷を接続するための手段
4 増幅トランジスタ
5 カスコードトランジスタ
6 キャパシタ
7 キャパシタ
8 電気的負荷を接続するための手段
9 入力トランジスタ
10 バイアス電流源
11 機能ブロック
12 電流源
13 電流源
14 抵抗
15 補助トランジスタ
16 補助トランジスタ
17 抵抗
18 差動増幅器
19 VGA
20 アンテナ
21 ベクトル変調器
22 トランジスタ
23 トランジスタ
25 トランジスタ
26 入力部
27 増幅器
28 ベースバンドVGA
GND 基準電位端子
I 入力部
IX 入力部
IOUT 出力部
IXOUT 出力部
LO 入力部
LOX 入力部
RFOUT 出力部
RFOUTX 出力部
VCTRL 制御信号入力部
VDD 供給電位端子
Claims (8)
- 無線周波数入力信号を供給するための入力部(LO)と、利得のアナログの制御信号を供給するための入力部(VCTRL)と、出力部(RFOUT)とが備えられ、
供給電位端子(VDD)と基準電位端子(GND)との間に電流経路が接続されており、
上記電流経路が、
第1端子にて上記基準電位端子(GND)に結合されている被制御経路と、可変増幅器の無線周波数入力信号を供給するための上記入力部(LO)に結合されている制御入力部とを有する増幅トランジスタ(1)と、
可変増幅器の制御信号を供給するための上記入力部(VCTRL)に結合されている制御入力部と、第1端子にて上記出力部に結合されるとともに第2端子にて上記増幅トランジスタ(1)の第2端子に結合されている被制御経路とを有し、上記アナログの制御信号によりその利得が調整されるカスコードトランジスタ(2)とを含んでいることを特徴とする可変増幅器を備えた調整器構造であって、
上記電流経路(1、2;4、5)と、上記入力部(LO、LOX)と、上記出力部(RFOUT、RFOUTX)とが、差動信号を供給するように設計されており、
上記増幅トランジスタ(1)および上記カスコードトランジスタ(2)を有する第1直列回路を備え、
他の増幅トランジスタ(4)および他のカスコードトランジスタ(5)を有する第2直列回路を備え、
上記他のカスコードトランジスタ(5)の制御入力部は、可変増幅器の制御信号を供給するための上記入力部(VCTRL)に結合されており、
第1補助トランジスタ(15)および第2補助トランジスタ(16)を含んだ補助電流経路が備えられ、
上記第1補助トランジスタ(15)の被制御経路と第2補助トランジスタ(16)の被制御経路とが直列回路を成し、
上記第1補助トランジスタ(15)の制御入力部が上記増幅トランジスタ(4)の制御入力部に接続されており、上記第2補助トランジスタ(16)の制御入力部が上記カスコードトランジスタ(2)の制御入力部に接続されており、
上記補助電流経路(15、16)の出力端子が上記第2補助トランジスタ(16)の制御入力部に結合されてフィードバック経路(18)を成し、
可変増幅器の利得の制御信号を供給するための上記入力部(VCTRL)が、上記フィードバック経路(18)に形成されていることを特徴とする調整器構造。 - 上記供給電位端子(VDD)と上記カスコードトランジスタ(2)の第1端子との間に、電気的負荷を接続するための手段(3)が備えられていることを特徴とする請求項1に記載の調整器構造。
- 上記増幅トランジスタ(1)の制御入力部に接続され、バイアス信号を供給するための手段(9、10;11)を備えていることを特徴とする請求項1または2に記載の調整器構造。
- 上記バイアス信号を供給するための手段は、
バイアス電流源(10)が接続された入力トランジスタ(9)と、出力トランジスタとしての上記増幅トランジスタ(1)とを備えたカレントミラー(1、9)を含んでいることを特徴とする請求項3に記載の調整器構造。 - 上記バイアス信号を供給するための手段は、
上記増幅トランジスタ(1)の制御入力部を、可変増幅器の無線周波数入力信号を供給するための上記入力部(LO)に結合する結合素子(6、11)を含んでいることを特徴とする請求項3または4に記載の調整器構造。 - 上記結合素子(11)は、上記入力トランジスタ(9)の制御端子と、上記増幅トランジスタ(1)の制御端子との間に接続されていることを特徴とする請求項5に記載の調整器構造。
- 上記電流経路に配置され、上記増幅トランジスタ(1)の被制御経路の第1端子に接続された、バイアス信号を供給するための手段(12)を備えていることを特徴とする請求項1または2に記載の調整器構造。
- ユニポーラ半導体回路技術によって集積されていることを特徴とする請求項1ないし7のいずれかに記載の調整器構造。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005008372.2A DE102005008372B4 (de) | 2005-02-23 | 2005-02-23 | Steuerbarer Verstärker und dessen Verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006238447A JP2006238447A (ja) | 2006-09-07 |
JP4664835B2 true JP4664835B2 (ja) | 2011-04-06 |
Family
ID=36776285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006045627A Expired - Fee Related JP4664835B2 (ja) | 2005-02-23 | 2006-02-22 | 可変増幅器を備えた調整器構造 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7889005B2 (ja) |
JP (1) | JP4664835B2 (ja) |
DE (1) | DE102005008372B4 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005008274A1 (de) * | 2005-02-23 | 2006-08-24 | Infineon Technologies Ag | Steuerbarer Verstärker und Verfahren zum Verstärken eines Signals |
JP4686425B2 (ja) * | 2006-09-14 | 2011-05-25 | 株式会社リコー | 可変利得増幅回路 |
US8237497B2 (en) * | 2010-04-06 | 2012-08-07 | Mediatek Inc. | Amplifier for processing differential input using amplifier circuits with different driving capabilities and/or different frequency compensation characteristics |
CN102438389B (zh) * | 2010-09-29 | 2013-06-05 | 中微半导体设备(上海)有限公司 | 单一匹配网络、其构建方法和该匹配网络射频功率源系统 |
JP6465115B2 (ja) * | 2014-09-03 | 2019-02-06 | 富士通株式会社 | 電力増幅回路及び半導体集積回路 |
WO2016127119A1 (en) * | 2015-02-06 | 2016-08-11 | Clean Energy Labs, Llc | Loudspeaker having electrically conductive membrane transducers |
EP3316481A1 (en) * | 2016-11-01 | 2018-05-02 | NXP USA, Inc. | Baseband amplifier circuit |
US9998075B1 (en) | 2017-01-25 | 2018-06-12 | Psemi Corporation | LDO with fast recovery from saturation |
US10277168B2 (en) | 2017-03-06 | 2019-04-30 | Psemi Corporation | Stacked power amplifier power control |
US9960737B1 (en) * | 2017-03-06 | 2018-05-01 | Psemi Corporation | Stacked PA power control |
US10063303B1 (en) * | 2017-09-18 | 2018-08-28 | Integrated Device Technology, Inc. | Fast memory access control for phase and gain |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5912603A (ja) * | 1982-07-13 | 1984-01-23 | Toshiba Corp | カスコ−ド回路 |
JP2000114891A (ja) * | 1998-10-01 | 2000-04-21 | Sony Corp | 電流源回路 |
JP2002141758A (ja) * | 2000-11-01 | 2002-05-17 | Nec Corp | 利得可変低雑音増幅器 |
JP2002335135A (ja) * | 2001-03-05 | 2002-11-22 | Toshiba Corp | 高周波電力増幅器及びその制御回路 |
JP2003008373A (ja) * | 2001-06-27 | 2003-01-10 | Sony Corp | カスコード増幅回路 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5923217A (en) * | 1997-06-27 | 1999-07-13 | Motorola, Inc. | Amplifier circuit and method for generating a bias voltage |
US6651203B1 (en) | 1999-05-17 | 2003-11-18 | Infineon Technologies Ag | On chip programmable data pattern generator for semiconductor memories |
DE10132800C1 (de) * | 2001-07-06 | 2003-01-30 | Infineon Technologies Ag | Rauscharme Verstärkerschaltung |
US6724235B2 (en) * | 2001-07-23 | 2004-04-20 | Sequoia Communications | BiCMOS variable-gain transconductance amplifier |
US6496067B1 (en) * | 2002-01-07 | 2002-12-17 | Broadcom | Class AB voltage current convertor having multiple transconductance stages and its application to power amplifiers |
DE10231181A1 (de) * | 2002-07-10 | 2004-01-29 | Infineon Technologies Ag | Verstärkerschaltung mit einstellbarer Verstärkung und Sendeanordnung mit der Verstärkerschaltung |
JP4273729B2 (ja) * | 2002-09-18 | 2009-06-03 | ソニー株式会社 | 可変利得増幅器 |
US7129787B1 (en) * | 2003-04-18 | 2006-10-31 | Broadcom Corporation | Systems and methods for ramping power amplifier output power |
US7161429B2 (en) * | 2003-12-18 | 2007-01-09 | International Business Machines Corporation | Multi-port cross-connected multi-level cascode differential amplifier |
DE102005007876B4 (de) * | 2005-02-21 | 2013-07-04 | Infineon Technologies Ag | Verstärkerschaltung mit reduzierter Temperaturabhängingkeit der Verstärkung |
DE102005008274A1 (de) * | 2005-02-23 | 2006-08-24 | Infineon Technologies Ag | Steuerbarer Verstärker und Verfahren zum Verstärken eines Signals |
-
2005
- 2005-02-23 DE DE102005008372.2A patent/DE102005008372B4/de not_active Expired - Fee Related
-
2006
- 2006-02-21 US US11/358,623 patent/US7889005B2/en not_active Expired - Fee Related
- 2006-02-22 JP JP2006045627A patent/JP4664835B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5912603A (ja) * | 1982-07-13 | 1984-01-23 | Toshiba Corp | カスコ−ド回路 |
JP2000114891A (ja) * | 1998-10-01 | 2000-04-21 | Sony Corp | 電流源回路 |
JP2002141758A (ja) * | 2000-11-01 | 2002-05-17 | Nec Corp | 利得可変低雑音増幅器 |
JP2002335135A (ja) * | 2001-03-05 | 2002-11-22 | Toshiba Corp | 高周波電力増幅器及びその制御回路 |
JP2003008373A (ja) * | 2001-06-27 | 2003-01-10 | Sony Corp | カスコード増幅回路 |
Also Published As
Publication number | Publication date |
---|---|
US7889005B2 (en) | 2011-02-15 |
JP2006238447A (ja) | 2006-09-07 |
DE102005008372B4 (de) | 2016-08-18 |
US20060202760A1 (en) | 2006-09-14 |
DE102005008372A1 (de) | 2006-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4664835B2 (ja) | 可変増幅器を備えた調整器構造 | |
US5497123A (en) | Amplifier circuit having high linearity for cancelling third order harmonic distortion | |
US20040174213A1 (en) | Doherty bias circuit to dynamically compensate for process and environmental variations | |
US5896063A (en) | Variable gain amplifier with improved linearity and bandwidth | |
KR101127461B1 (ko) | 고도의 선형 가변이득 증폭기 | |
KR100427878B1 (ko) | 증폭회로 | |
US20040108902A1 (en) | High frequency power amplifier electric parts and radio telecommunication system | |
JP2007036973A (ja) | 電力増幅器および通信装置 | |
US6496067B1 (en) | Class AB voltage current convertor having multiple transconductance stages and its application to power amplifiers | |
KR102133926B1 (ko) | 낮은 위상 변화를 갖는 광대역 가변 이득 증폭기 | |
US6731173B1 (en) | Doherty bias circuit to dynamically compensate for process and environmental variations | |
US5844443A (en) | Linear high-frequency amplifier with high input impedance and high power efficiency | |
US7397307B2 (en) | Amplifier arrangement having an adjustable gain, and use thereof | |
US6970044B2 (en) | Audio signal amplifier circuit and electronic apparatus having the same | |
EP2106021A1 (en) | Converting circuit for converting differential signal to single-ended signal | |
KR100729342B1 (ko) | dB 선형 이득의 제어가 가능한 CMOS 가변 이득 증폭기 | |
JP2006303850A (ja) | 高周波電力増幅回路および無線通信端末 | |
KR100416168B1 (ko) | 전력 증폭기 | |
US7501887B2 (en) | Controllable amplifier and its use | |
US6100763A (en) | Circuit for RF buffer and method of operation | |
US6388529B2 (en) | Grounded emitter amplifier and a radio communication device using the same | |
KR20080061480A (ko) | Cmos 가변 이득 증폭기 | |
US7282995B2 (en) | Variable gain amplifier | |
JP4571145B2 (ja) | 相互コンダクタンス回路 | |
JP2007306208A (ja) | 送信装置並びに利得可変周波数変換回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090306 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090317 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090609 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091006 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091228 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100406 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100706 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110107 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R370 | Written measure of declining of transfer procedure |
Free format text: JAPANESE INTERMEDIATE CODE: R370 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |