JP4663063B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4663063B2
JP4663063B2 JP2000165332A JP2000165332A JP4663063B2 JP 4663063 B2 JP4663063 B2 JP 4663063B2 JP 2000165332 A JP2000165332 A JP 2000165332A JP 2000165332 A JP2000165332 A JP 2000165332A JP 4663063 B2 JP4663063 B2 JP 4663063B2
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Prior art keywords
film
insulating film
tft
layer
gate
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Expired - Fee Related
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JP2000165332A
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Japanese (ja)
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JP2001053286A (ja
JP2001053286A5 (enExample
Inventor
光範 坂間
勇臣 浅見
典子 石丸
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000165332A priority Critical patent/JP4663063B2/ja
Publication of JP2001053286A publication Critical patent/JP2001053286A/ja
Publication of JP2001053286A5 publication Critical patent/JP2001053286A5/ja
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Publication of JP4663063B2 publication Critical patent/JP4663063B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2000165332A 1999-06-02 2000-06-02 半導体装置の作製方法 Expired - Fee Related JP4663063B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000165332A JP4663063B2 (ja) 1999-06-02 2000-06-02 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-154429 1999-06-02
JP15442999 1999-06-02
JP2000165332A JP4663063B2 (ja) 1999-06-02 2000-06-02 半導体装置の作製方法

Publications (3)

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JP2001053286A JP2001053286A (ja) 2001-02-23
JP2001053286A5 JP2001053286A5 (enExample) 2007-08-23
JP4663063B2 true JP4663063B2 (ja) 2011-03-30

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Family Applications (1)

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JP2000165332A Expired - Fee Related JP4663063B2 (ja) 1999-06-02 2000-06-02 半導体装置の作製方法

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JP (1) JP4663063B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
WO2004073068A1 (en) 2003-02-14 2004-08-26 Canon Kabushiki Kaisha Radiation image pickup device
JP2004265933A (ja) * 2003-02-14 2004-09-24 Canon Inc 放射線検出装置
KR100685395B1 (ko) 2004-06-30 2007-02-22 삼성에스디아이 주식회사 유기전계발광표시장치의 제조방법
KR100731745B1 (ko) 2005-06-22 2007-06-22 삼성에스디아이 주식회사 유기전계발광표시장치 및 그 제조방법
JP6087970B2 (ja) * 2015-03-26 2017-03-01 株式会社半導体エネルギー研究所 表示装置、表示モジュール及び電子機器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2648746B2 (ja) * 1991-09-26 1997-09-03 株式会社ジーティシー 絶縁膜形成方法
JPH06267856A (ja) * 1993-03-16 1994-09-22 Toshiba Corp 化合物薄膜の形成方法
JPH09162405A (ja) * 1995-12-04 1997-06-20 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH09172182A (ja) * 1995-12-18 1997-06-30 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

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JP2001053286A (ja) 2001-02-23

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