JP4656685B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4656685B2
JP4656685B2 JP2000005580A JP2000005580A JP4656685B2 JP 4656685 B2 JP4656685 B2 JP 4656685B2 JP 2000005580 A JP2000005580 A JP 2000005580A JP 2000005580 A JP2000005580 A JP 2000005580A JP 4656685 B2 JP4656685 B2 JP 4656685B2
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JP
Japan
Prior art keywords
film
insulating film
semiconductor
semiconductor device
gate insulating
Prior art date
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Expired - Fee Related
Application number
JP2000005580A
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English (en)
Japanese (ja)
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JP2000269513A5 (enExample
JP2000269513A (ja
Inventor
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000005580A priority Critical patent/JP4656685B2/ja
Publication of JP2000269513A publication Critical patent/JP2000269513A/ja
Publication of JP2000269513A5 publication Critical patent/JP2000269513A5/ja
Application granted granted Critical
Publication of JP4656685B2 publication Critical patent/JP4656685B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Shift Register Type Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2000005580A 1999-01-14 2000-01-14 半導体装置 Expired - Fee Related JP4656685B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000005580A JP4656685B2 (ja) 1999-01-14 2000-01-14 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP849699 1999-01-14
JP11-8496 1999-01-14
JP2000005580A JP4656685B2 (ja) 1999-01-14 2000-01-14 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010215788A Division JP5298094B2 (ja) 1999-01-14 2010-09-27 半導体装置及びその作製方法
JP2010236657A Division JP5244885B2 (ja) 1999-01-14 2010-10-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000269513A JP2000269513A (ja) 2000-09-29
JP2000269513A5 JP2000269513A5 (enExample) 2007-03-08
JP4656685B2 true JP4656685B2 (ja) 2011-03-23

Family

ID=26343017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000005580A Expired - Fee Related JP4656685B2 (ja) 1999-01-14 2000-01-14 半導体装置

Country Status (1)

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JP (1) JP4656685B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1871711B (zh) 2003-10-28 2011-12-07 株式会社半导体能源研究所 显示器件及其制造方法,以及电视接收机
JP4700317B2 (ja) * 2004-09-30 2011-06-15 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4698998B2 (ja) * 2004-09-30 2011-06-08 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
EP1998374A3 (en) * 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
US7642114B2 (en) 2006-07-19 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical device and manufacturing method thereof
JP2008147207A (ja) * 2006-12-06 2008-06-26 Dainippon Printing Co Ltd 薄膜トランジスタ基板
KR101721285B1 (ko) 2009-10-09 2017-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터 및 표시 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376482A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 非晶質シリコン薄膜トランジスタ
JPH0818053A (ja) * 1994-06-28 1996-01-19 Mitsubishi Electric Corp 薄膜トランジスタ及びその製造方法
JPH10261801A (ja) * 1997-03-19 1998-09-29 Toshiba Electron Eng Corp 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法

Also Published As

Publication number Publication date
JP2000269513A (ja) 2000-09-29

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