JP4642276B2 - 半導体装置の製造方法及び記録媒体 - Google Patents

半導体装置の製造方法及び記録媒体 Download PDF

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Publication number
JP4642276B2
JP4642276B2 JP2001180492A JP2001180492A JP4642276B2 JP 4642276 B2 JP4642276 B2 JP 4642276B2 JP 2001180492 A JP2001180492 A JP 2001180492A JP 2001180492 A JP2001180492 A JP 2001180492A JP 4642276 B2 JP4642276 B2 JP 4642276B2
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value
profile
evaluation
film
composition ratio
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JP2002076083A (ja
JP2002076083A5 (enExample
Inventor
克弥 能澤
徹 齋藤
実 久保
好彦 神澤
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2001180492A 2000-06-16 2001-06-14 半導体装置の製造方法及び記録媒体 Expired - Fee Related JP4642276B2 (ja)

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JP2001180492A JP4642276B2 (ja) 2000-06-16 2001-06-14 半導体装置の製造方法及び記録媒体

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JP2000-181097 2000-06-16
JP2000181097 2000-06-16
JP2001180492A JP4642276B2 (ja) 2000-06-16 2001-06-14 半導体装置の製造方法及び記録媒体

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JP2002076083A JP2002076083A (ja) 2002-03-15
JP2002076083A5 JP2002076083A5 (enExample) 2008-01-31
JP4642276B2 true JP4642276B2 (ja) 2011-03-02

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7099005B1 (en) * 2000-09-27 2006-08-29 Kla-Tencor Technologies Corporation System for scatterometric measurements and applications
WO2002095372A1 (en) * 2001-05-22 2002-11-28 Horiba, Ltd. Thin-film characteristic measuring method using spectroellipsometer
JP2003347229A (ja) 2002-05-31 2003-12-05 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US7224471B2 (en) 2003-10-28 2007-05-29 Timbre Technologies, Inc. Azimuthal scanning of a structure formed on a semiconductor wafer
US20090078309A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
JP4696037B2 (ja) * 2006-09-01 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9410890B2 (en) * 2012-03-19 2016-08-09 Kla-Tencor Corporation Methods and apparatus for spectral luminescence measurement
JP6591377B2 (ja) * 2015-10-08 2019-10-16 株式会社ニューフレアテクノロジー 気相成長速度測定装置、気相成長装置および成長速度検出方法
CN108701623B (zh) * 2015-11-05 2022-10-04 米朋克斯株式会社 基板评价方法
KR20220103713A (ko) * 2019-11-28 2022-07-22 에베 그룹 에. 탈너 게엠베하 기판 측정 장치 및 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0540087A (ja) * 1991-08-08 1993-02-19 Fujitsu Ltd 半導体中の元素濃度の測定および制御方法
JP2000009553A (ja) * 1998-06-26 2000-01-14 Toshiba Corp 薄膜評価装置、薄膜評価方法、半導体シミュレーション装置、半導体シミュレーション方法、薄膜評価プログラムを格納したコンピュータ読み取り可能な記録媒体、及びシミュレーションプログラムを格納したコンピュータ読み取り可能な記録媒体

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