JP4640174B2 - レーザーダイシング装置 - Google Patents
レーザーダイシング装置 Download PDFInfo
- Publication number
- JP4640174B2 JP4640174B2 JP2005506370A JP2005506370A JP4640174B2 JP 4640174 B2 JP4640174 B2 JP 4640174B2 JP 2005506370 A JP2005506370 A JP 2005506370A JP 2005506370 A JP2005506370 A JP 2005506370A JP 4640174 B2 JP4640174 B2 JP 4640174B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- thickness direction
- wafer surface
- laser
- dicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000001514 detection method Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 description 17
- 201000009310 astigmatism Diseases 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
図2(a)及び図2(b)は、ウェーハ内部に形成された改質領域を説明する概念図であり;
図3は、非点収差式光学測定手段の測定原理を説明する概念図であり;
図4は、集光点の厚さ方向位置を説明する概念図であり;
図5は、従来のレーザー光学部を説明する概念図である。
図1は、本発明に係るレーザーダイシング装置の概略構成図である。レーザーダイシング装置10は、図1に示すように、ウェーハ移動部11、レーザー光学部20、アライメント手段30、表面検出手段41、制御部50等から構成されている。
Claims (1)
- ウェーハの内部に集光点が合わされたレーザー光を前記ウェーハ表面から入射させながら走査し、前記ウェーハの内部に改質領域を形成することによって前記ウェーハをダイシングして、前記ウェーハを個々のチップに分割するダイシング装置であって、
前記ウェーハをアライメントするアライメント手段と、
前記ウェーハ表面に入射したレーザー光のうち前記ウェーハ表面で反射した表面検出用のレーザー光を取り込むことにより、前記レーザー光の走査に対しリアルタイムで前記レーザー光の入射ポイントにおける前記ウェーハ表面の厚さ方向位置を検出する第1の位置検出手段と、
第1の位置検出手段とは別に設けられ、前記レーザー光の走査が行われる前の前記ウェーハのアライメント時に前記ウェーハ表面の周縁部における厚さ方向位置を予め検出する第2の位置検出手段と、
前記第2の位置検出手段によって検出された前記ウェーハ表面の周縁部における厚さ方向位置を記憶する記憶手段と、
前記ウェーハ内部における前記集光点の厚さ方向位置を制御する制御部と、を有し、
該制御部は、前記レーザー光を前記ウェーハ表面の外側から内側に向けて走査する時には、前記集光点の厚さ方向位置を前記記憶手段に記憶されている前記ウェーハ表面の周縁部における厚さ方向位置データに基いて制御し、所定距離走査後に前記第1の位置検出手段で検出された前記ウェーハ表面の厚さ方向位置データに基づく制御に切換えることを特徴とするレーザーダイシング装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003144598 | 2003-05-22 | ||
JP2003144598 | 2003-05-22 | ||
PCT/JP2004/006993 WO2004105110A1 (ja) | 2003-05-22 | 2004-05-17 | レーザーダイシング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2004105110A1 JPWO2004105110A1 (ja) | 2006-07-20 |
JP4640174B2 true JP4640174B2 (ja) | 2011-03-02 |
Family
ID=33475211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005506370A Expired - Lifetime JP4640174B2 (ja) | 2003-05-22 | 2004-05-17 | レーザーダイシング装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8492676B2 (ja) |
JP (1) | JP4640174B2 (ja) |
KR (1) | KR101058800B1 (ja) |
DE (1) | DE112004000769B4 (ja) |
TW (1) | TW200428501A (ja) |
WO (1) | WO2004105110A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI290500B (en) * | 2004-12-14 | 2007-12-01 | Arima Optoelectronics Corp | Laser dicing apparatus for a silicon wafer and dicing method thereof |
JP4555092B2 (ja) * | 2005-01-05 | 2010-09-29 | 株式会社ディスコ | レーザー加工装置 |
JP2007095952A (ja) * | 2005-09-28 | 2007-04-12 | Tokyo Seimitsu Co Ltd | レーザーダイシング装置及びレーザーダイシング方法 |
JP4748357B2 (ja) | 2005-10-14 | 2011-08-17 | 株式会社東京精密 | ダイシング装置及び方法 |
JP4781128B2 (ja) * | 2006-02-24 | 2011-09-28 | 株式会社デンソー | 半導体ウェハのダイシング方法 |
KR101428824B1 (ko) * | 2006-10-04 | 2014-08-11 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공방법 |
JP5014745B2 (ja) * | 2006-11-16 | 2012-08-29 | キヤノンマシナリー株式会社 | 捺印装置及び捺印方法 |
KR100699247B1 (ko) * | 2006-11-21 | 2007-03-28 | 주식회사 고려반도체시스템 | 웨이퍼 레이저 쏘잉 장치의 파라미터변환방법 및 그 장치 |
US20110155392A1 (en) * | 2009-12-30 | 2011-06-30 | Frazier W Lynn | Hydrostatic Flapper Stimulation Valve and Method |
JP5576211B2 (ja) * | 2010-08-23 | 2014-08-20 | 日立造船株式会社 | レーザ加工装置及びレーザ加工方法 |
US8938317B2 (en) * | 2012-01-10 | 2015-01-20 | Mitsubishi Electronic Research Laboratories, Inc. | System and method for calibrating laser cutting machines |
KR20140140053A (ko) | 2012-02-26 | 2014-12-08 | 솔렉셀, 인크. | 레이저 분할 및 디바이스 층 전사를 위한 시스템 및 방법 |
JP6210902B2 (ja) * | 2014-02-18 | 2017-10-11 | 株式会社ディスコ | レーザー加工溝の検出方法 |
US9548188B2 (en) | 2014-07-30 | 2017-01-17 | Lam Research Corporation | Method of conditioning vacuum chamber of semiconductor substrate processing apparatus |
JP6347714B2 (ja) * | 2014-10-02 | 2018-06-27 | 株式会社ディスコ | ウエーハの加工方法 |
KR101821239B1 (ko) * | 2015-09-04 | 2018-01-24 | 주식회사 이오테크닉스 | 접착제 제거장치 및 방법 |
KR20170087610A (ko) | 2016-01-21 | 2017-07-31 | 삼성전자주식회사 | 웨이퍼 절단 장치 |
WO2019198513A1 (ja) * | 2018-04-09 | 2019-10-17 | 東京エレクトロン株式会社 | レーザー加工装置、レーザー加工システム、およびレーザー加工方法 |
US20200411338A1 (en) * | 2018-04-09 | 2020-12-31 | Tokyo Electron Limited | Laser processing device, laser processing system and laser processing method |
JP7246247B2 (ja) * | 2019-05-15 | 2023-03-27 | 東京エレクトロン株式会社 | 基板処理装置及び監視方法 |
JP7286464B2 (ja) * | 2019-08-02 | 2023-06-05 | 株式会社ディスコ | レーザー加工装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002192367A (ja) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2004188422A (ja) * | 2002-12-06 | 2004-07-08 | Hamamatsu Photonics Kk | レーザ加工装置及びレーザ加工方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4789770A (en) * | 1987-07-15 | 1988-12-06 | Westinghouse Electric Corp. | Controlled depth laser drilling system |
US6407360B1 (en) * | 1998-08-26 | 2002-06-18 | Samsung Electronics, Co., Ltd. | Laser cutting apparatus and method |
JP2002022417A (ja) * | 2000-07-13 | 2002-01-23 | Disco Abrasive Syst Ltd | 厚さ測定装置 |
JP3626442B2 (ja) | 2000-09-13 | 2005-03-09 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP3722731B2 (ja) * | 2000-09-13 | 2005-11-30 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP2002192371A (ja) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | レーザ加工方法及びレーザ加工装置 |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP4762458B2 (ja) | 2000-09-13 | 2011-08-31 | 浜松ホトニクス株式会社 | レーザ加工装置 |
US6676878B2 (en) * | 2001-01-31 | 2004-01-13 | Electro Scientific Industries, Inc. | Laser segmented cutting |
-
2004
- 2004-05-17 DE DE112004000769.0T patent/DE112004000769B4/de not_active Expired - Fee Related
- 2004-05-17 WO PCT/JP2004/006993 patent/WO2004105110A1/ja active Application Filing
- 2004-05-17 KR KR1020057021701A patent/KR101058800B1/ko active IP Right Grant
- 2004-05-17 US US10/555,451 patent/US8492676B2/en active Active
- 2004-05-17 JP JP2005506370A patent/JP4640174B2/ja not_active Expired - Lifetime
- 2004-05-21 TW TW093114460A patent/TW200428501A/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002192367A (ja) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2004188422A (ja) * | 2002-12-06 | 2004-07-08 | Hamamatsu Photonics Kk | レーザ加工装置及びレーザ加工方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2004105110A1 (ja) | 2004-12-02 |
DE112004000769B4 (de) | 2015-06-25 |
US20060124615A1 (en) | 2006-06-15 |
KR20060020627A (ko) | 2006-03-06 |
DE112004000769T5 (de) | 2006-07-06 |
TWI349957B (ja) | 2011-10-01 |
KR101058800B1 (ko) | 2011-08-23 |
TW200428501A (en) | 2004-12-16 |
JPWO2004105110A1 (ja) | 2006-07-20 |
US8492676B2 (en) | 2013-07-23 |
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