JP4639379B2 - バイポーラ型飛行時間質量分析計用のディテクター - Google Patents
バイポーラ型飛行時間質量分析計用のディテクター Download PDFInfo
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- JP4639379B2 JP4639379B2 JP2005133352A JP2005133352A JP4639379B2 JP 4639379 B2 JP4639379 B2 JP 4639379B2 JP 2005133352 A JP2005133352 A JP 2005133352A JP 2005133352 A JP2005133352 A JP 2005133352A JP 4639379 B2 JP4639379 B2 JP 4639379B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/025—Detectors specially adapted to particle spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24435—Microchannel plates
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Tubes For Measurement (AREA)
- Measurement Of Radiation (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Description
Claims (17)
- 飛行時間質量分析計用ディテクターであって、
前記ディテクターに簡単に取り付け及び取外し可能に構成されたカートリッジに取り付けられて、荷電粒子を多数の第一の電子に変換するためのマイクロチャネルプレートと、
前記多数の第一の電子を多数の光量子に変換するためのシンチレーターと、
前記多数の光量子を受けるために前記シンチレーターとの関係で厳密に離間した関係をもって配置されて、前記光量子を多数の第二の電子に再変換させて、それら多数の第二の電子を前記荷電粒子の質量に対応した電荷パルスに統合させるためのコレクターを有し、
前記シンチレーターが、前記マイクロチャネルプレートを含んだ前記カートリッジとの関係で厳密に離間した関係をもって配置され、電圧源に接続された入力側と、アースに接続された出力側とを有し、前記入力側が、前記第一の電子を受けるために前記マイクロチャネルプレートに面し、
前記コレクターが、アバランシェホトダイオード,アバランシェホトダイオードのアレー,電荷結合素子,光起電力素子,CdS光導電セル,PNホトダイオード,PINホトダイオード,ホトトランジスター,真空ホトダイオード,発光スクリーンの代りに金属アノードを有するイメージ増強管,マイクロチャネルプレートタイプの光電子増倍管及び段階的スキッピングを組み込んだ光電子増倍管より成るグループから選択された光センサーを有している、飛行時間質量分析計用のディテクター。 - 前記マイクロチャネルプレートの入力面上に形成されたコーティングを有し、そのコーティングが、酸化アルミニウム(Al2O3),酸化マグネシウム(MgO),酸化スズ(SnO2),クォーツ(SiO2),フッ化バリウム(BaF2),ルビジウムスズ(Rb3Sn),酸化ベリリウム(BeO),ダイヤモンド及びこれらの組合せより成るグループから選択された材料にて構成されている、請求項1に記載のディテクター。
- 前記シンチレーターが、多数の電子の到達時間に順応する周波数バンド幅を提供するよう構成されている、請求項1に記載のディテクター。
- 前記シンチレーターが、プラスチック・シンチレーター材料にて構成されている、請求項1に記載のディテクター。
- 前記シンチレーターの前記入力側に形成された導電性コーティングを更に有し、該導電性コーティングが、発生した光量子を内部で反射させるように構成され、前記電圧源に接続されるようになっている、請求項4に記載のディテクター。
- 前記シンチレーター上に形成された前記導電性コーティングが、アルミニウム,クロム又はアルミニウムとクロムの組合せから形成されている、請求項5に記載のディテクター。
- 前記光センサーが、アバランシェホトダイオードである、請求項1に記載のディテクター。
- 前記光センサーが、アバランシェホトダイオードのアレーである、請求項1に記載のディテクター。
- 前記光センサーが、電荷結合素子である、請求項1に記載のディテクター。
- 前記光センサーが、光起電力素子である、請求項1に記載のディテクター。
- 前記光センサーが、CdS光導電セルである、請求項1に記載のディテクター。
- 前記光センサーが、PINホトダイオードである、請求項1に記載のディテクター。
- 前記光センサーが、ホトトランジスターである、請求項1に記載のディテクター。
- 前記光センサーが、真空ホトダイオードである、請求項1に記載のディテクター。
- 前記光センサーが、発光スクリーンの代りに金属アノードを有するイメージ増強管である、請求項1に記載のディテクター。
- 前記光センサーが、マイクロチャネルプレートタイプの光電子増倍管である、請求項1に記載のディテクター。
- 前記光センサーが、段階的スキッピングを組み込んだ光電子増倍管である、請求項1に記載のディテクター。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/835,032 US6958474B2 (en) | 2000-03-16 | 2004-04-29 | Detector for a bipolar time-of-flight mass spectrometer |
Publications (2)
Publication Number | Publication Date |
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JP2005351887A JP2005351887A (ja) | 2005-12-22 |
JP4639379B2 true JP4639379B2 (ja) | 2011-02-23 |
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JP2005133352A Active JP4639379B2 (ja) | 2004-04-29 | 2005-04-28 | バイポーラ型飛行時間質量分析計用のディテクター |
Country Status (3)
Country | Link |
---|---|
US (1) | US6958474B2 (ja) |
EP (1) | EP1592041A3 (ja) |
JP (1) | JP4639379B2 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7030375B1 (en) * | 2003-10-07 | 2006-04-18 | Kla-Tencor Technologies Corporation | Time of flight electron detector |
US7141787B2 (en) * | 2004-05-17 | 2006-11-28 | Burle Technologies, Inc. | Detector for a co-axial bipolar time-of-flight mass spectrometer |
US7242008B2 (en) * | 2004-05-19 | 2007-07-10 | The Johns Hopkins University | Bipolar ion detector |
US7535185B2 (en) * | 2005-10-26 | 2009-05-19 | Itt Manufacturing Enterprises, Inc. | Method and system for implementing power reduction algorithms in a night vision system power system |
US10309929B2 (en) * | 2006-02-14 | 2019-06-04 | Excellims Corporation | Practical ion mobility spectrometer apparatus and methods for chemical and/or biological detection |
US10073056B2 (en) * | 2006-02-14 | 2018-09-11 | Excellims Corporation | Practical ion mobility spectrometer apparatus and methods for chemical and/or biological detection |
US9523657B2 (en) * | 2006-02-14 | 2016-12-20 | Excellims Corporation | Practical ion mobility spectrometer apparatus and methods for chemical and/or biological detection |
US7714300B1 (en) * | 2006-06-27 | 2010-05-11 | Kla-Tencor Technologies Corporation | High-speed high-efficiency solid-state electron detector |
US10794862B2 (en) * | 2006-11-28 | 2020-10-06 | Excellims Corp. | Practical ion mobility spectrometer apparatus and methods for chemical and/or biological detection |
US7655891B2 (en) * | 2007-03-22 | 2010-02-02 | Hamamatsu Photonics K.K. | Charged-particle detecting apparatus |
US7564043B2 (en) * | 2007-05-24 | 2009-07-21 | Hamamatsu Photonics K.K. | MCP unit, MCP detector and time of flight mass spectrometer |
JP5049167B2 (ja) * | 2008-03-07 | 2012-10-17 | 浜松ホトニクス株式会社 | マイクロチャネルプレート組立体 |
JP5210940B2 (ja) * | 2009-03-31 | 2013-06-12 | 浜松ホトニクス株式会社 | 質量分析装置 |
JP5546806B2 (ja) * | 2009-06-26 | 2014-07-09 | 株式会社東芝 | 核医学イメージング装置 |
GB0918630D0 (en) * | 2009-10-23 | 2009-12-09 | Thermo Fisher Scient Bremen | Detection apparatus for detecting charged particles, methods for detecting charged particles and mass spectrometer |
GB0918629D0 (en) * | 2009-10-23 | 2009-12-09 | Thermo Fisher Scient Bremen | Detection apparatus for detecting charged particles, methods for detecting charged particles and mass spectometer |
US8203118B2 (en) * | 2009-12-11 | 2012-06-19 | Honeywell International, Inc. | Ion-trap mass spectrometer driven by a monolithic photodiode array |
DE102010008995A1 (de) | 2010-02-24 | 2011-08-25 | Siemens Aktiengesellschaft, 80333 | Gleichspannungs-Hochspannungsquelle und Teilchenbeschleuniger |
US8410442B2 (en) | 2010-10-05 | 2013-04-02 | Nathaniel S. Hankel | Detector tube stack with integrated electron scrub system and method of manufacturing the same |
JP2012138324A (ja) * | 2010-12-28 | 2012-07-19 | Topcon Corp | 二次電子検出器、及び荷電粒子ビーム装置 |
US8861167B2 (en) | 2011-05-12 | 2014-10-14 | Global Plasma Solutions, Llc | Bipolar ionization device |
GB201116845D0 (en) * | 2011-09-30 | 2011-11-09 | Micromass Ltd | Multiple channel detection for time of flight mass spectrometer |
CN102508281B (zh) * | 2011-10-18 | 2013-06-26 | 中国航天科技集团公司第五研究院第五一〇研究所 | 一种空间电子的探测装置 |
KR101303242B1 (ko) | 2011-11-25 | 2013-09-04 | 한국기초과학지원연구원 | 냉전자를 이용한 음이온 발생 및 전자포획 분해장치 |
JP6076729B2 (ja) | 2012-01-25 | 2017-02-08 | 浜松ホトニクス株式会社 | イオン検出装置 |
JP6121681B2 (ja) * | 2012-10-10 | 2017-04-26 | 浜松ホトニクス株式会社 | Mcpユニット、mcp検出器および飛行時間型質量分析器 |
US9689996B2 (en) | 2013-04-05 | 2017-06-27 | General Electric Company | Integrated diode DAS detector |
US9524855B2 (en) * | 2014-12-11 | 2016-12-20 | Thermo Finnigan Llc | Cascaded-signal-intensifier-based ion imaging detector for mass spectrometer |
US9578311B2 (en) * | 2014-10-22 | 2017-02-21 | Microsoft Technology Licensing, Llc | Time of flight depth camera |
CN107703712B (zh) * | 2017-11-13 | 2023-11-14 | 中国工程物理研究院激光聚变研究中心 | 一种硬x射线条纹相机及其探测硬x射线能段的方法 |
EP3984056A1 (en) * | 2019-06-13 | 2022-04-20 | Dectris AG | Electron detector |
WO2022240813A1 (en) * | 2021-05-11 | 2022-11-17 | Inficon, Inc. | Time-of-flight mass spectrometer assembly with a secondary flange |
CN113932988B (zh) * | 2021-11-26 | 2024-04-26 | 常熟大众机器人研究院有限公司 | 锂电池盖板检测装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6240148A (ja) * | 1985-08-15 | 1987-02-21 | Shimadzu Corp | イオン検出器 |
JPH07500448A (ja) * | 1991-04-25 | 1995-01-12 | ザ パーキン エルマー コーポレイション | 分解能と伝達効率との間の性能配分を可能とする開口を備えた飛行時間型質量分析計 |
US5770858A (en) * | 1997-02-28 | 1998-06-23 | Galileo Corporation | Microchannel plate-based detector for time-of-flight mass spectrometer |
JPH10283981A (ja) * | 1997-03-31 | 1998-10-23 | Nippon Biitec:Kk | イオン検出装置 |
JP2000338069A (ja) * | 1999-05-25 | 2000-12-08 | Jeol Ltd | 複合表面分析装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2825760C2 (de) * | 1978-06-12 | 1983-08-25 | Finnigan MAT GmbH, 2800 Bremen | Einrichtung zum alternativen Nachweis von positiv und negativ geladenen Ionen am Ausgang eines Massenspektrometers |
US4471378A (en) * | 1979-12-31 | 1984-09-11 | American Sterilizer Company | Light and particle image intensifier |
US4454422A (en) * | 1982-01-27 | 1984-06-12 | Siemens Gammasonics, Inc. | Radiation detector assembly for generating a two-dimensional image |
JP2735222B2 (ja) * | 1988-06-01 | 1998-04-02 | 株式会社日立製作所 | 質量分析計 |
US4948965A (en) * | 1989-02-13 | 1990-08-14 | Galileo Electro-Optics Corporation | Conductively cooled microchannel plates |
US4978885A (en) * | 1989-03-02 | 1990-12-18 | Galileo Electro-Optics Corporation | Electron multipliers with reduced ion feedback |
DE69030145T2 (de) * | 1989-08-18 | 1997-07-10 | Galileo Electro Optics Corp | Kontinuierliche Dünnschicht-Dynoden |
US5306910A (en) * | 1992-04-10 | 1994-04-26 | Millipore Corporation | Time modulated electrified spray apparatus and process |
US5326978A (en) * | 1992-12-17 | 1994-07-05 | Intevac, Inc. | Focused electron-bombarded detector |
DE4316805C2 (de) * | 1993-05-19 | 1997-03-06 | Bruker Franzen Analytik Gmbh | Nachweis schwerer Ionen in einem Flugzeitmassenspektrometer |
US5349185A (en) * | 1993-06-25 | 1994-09-20 | Vanderbilt University | High resolution detector device for a particle time-of-flight measurement system |
US5453609A (en) * | 1993-10-22 | 1995-09-26 | Southeastern Universities Research Assn., Inc. | Non cross talk multi-channel photomultiplier using guided electron multipliers |
US5548121A (en) * | 1995-06-27 | 1996-08-20 | Balmer; David K. | Electronically shielded solid state charged particle detector |
US5969361A (en) * | 1996-07-16 | 1999-10-19 | Centre National De La Recherche Scientifique | Transparent position-sensitive particle detector |
DE19644713A1 (de) * | 1996-10-28 | 1998-05-07 | Bruker Franzen Analytik Gmbh | Hochauflösender Hochmassendetektor für Flugzeitmassenspektrometer |
US5994694A (en) * | 1996-12-06 | 1999-11-30 | The Regents Of The University Of California | Ultra-high-mass mass spectrometry with charge discrimination using cryogenic detectors |
US5990483A (en) * | 1997-10-06 | 1999-11-23 | El-Mul Technologies Ltd. | Particle detection and particle detector devices |
US6008491A (en) * | 1997-10-15 | 1999-12-28 | The United States Of America As Represented By The United States Department Of Energy | Time-of-flight SIMS/MSRI reflectron mass analyzer and method |
US6013913A (en) * | 1998-02-06 | 2000-01-11 | The University Of Northern Iowa | Multi-pass reflectron time-of-flight mass spectrometer |
US6243348B1 (en) * | 1998-06-05 | 2001-06-05 | Massachusetts Institute Of Technology | Very-high-density memory device utilizing a scintillating data-storage medium |
US6828729B1 (en) * | 2000-03-16 | 2004-12-07 | Burle Technologies, Inc. | Bipolar time-of-flight detector, cartridge and detection method |
GB2381373B (en) * | 2001-05-29 | 2005-03-23 | Thermo Masslab Ltd | Time of flight mass spectrometer and multiple detector therefor |
-
2004
- 2004-04-29 US US10/835,032 patent/US6958474B2/en not_active Expired - Lifetime
-
2005
- 2005-04-28 JP JP2005133352A patent/JP4639379B2/ja active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6240148A (ja) * | 1985-08-15 | 1987-02-21 | Shimadzu Corp | イオン検出器 |
JPH07500448A (ja) * | 1991-04-25 | 1995-01-12 | ザ パーキン エルマー コーポレイション | 分解能と伝達効率との間の性能配分を可能とする開口を備えた飛行時間型質量分析計 |
US5770858A (en) * | 1997-02-28 | 1998-06-23 | Galileo Corporation | Microchannel plate-based detector for time-of-flight mass spectrometer |
JPH10283981A (ja) * | 1997-03-31 | 1998-10-23 | Nippon Biitec:Kk | イオン検出装置 |
JP2000338069A (ja) * | 1999-05-25 | 2000-12-08 | Jeol Ltd | 複合表面分析装置 |
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JP2005351887A (ja) | 2005-12-22 |
US20040211896A1 (en) | 2004-10-28 |
EP1592041A3 (en) | 2006-10-25 |
EP1592041A2 (en) | 2005-11-02 |
US6958474B2 (en) | 2005-10-25 |
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