JP4628807B2 - 真空処理装置および真空処理方法 - Google Patents

真空処理装置および真空処理方法 Download PDF

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Publication number
JP4628807B2
JP4628807B2 JP2005022114A JP2005022114A JP4628807B2 JP 4628807 B2 JP4628807 B2 JP 4628807B2 JP 2005022114 A JP2005022114 A JP 2005022114A JP 2005022114 A JP2005022114 A JP 2005022114A JP 4628807 B2 JP4628807 B2 JP 4628807B2
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Japan
Prior art keywords
vacuum
pressure
processing chamber
vacuum processing
time
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Expired - Lifetime
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JP2005022114A
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English (en)
Japanese (ja)
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JP2006210728A5 (https=
JP2006210728A (ja
Inventor
学 枝村
昭孝 牧野
元彦 吉開
孝則 中司
勤 田内
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2005022114A priority Critical patent/JP4628807B2/ja
Priority to US11/068,804 priority patent/US7194821B2/en
Publication of JP2006210728A publication Critical patent/JP2006210728A/ja
Publication of JP2006210728A5 publication Critical patent/JP2006210728A5/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2066—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using controlling means acting on the pressure source

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  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2005022114A 2005-01-28 2005-01-28 真空処理装置および真空処理方法 Expired - Lifetime JP4628807B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005022114A JP4628807B2 (ja) 2005-01-28 2005-01-28 真空処理装置および真空処理方法
US11/068,804 US7194821B2 (en) 2005-01-28 2005-03-02 Vacuum processing apparatus and vacuum processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005022114A JP4628807B2 (ja) 2005-01-28 2005-01-28 真空処理装置および真空処理方法

Publications (3)

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JP2006210728A JP2006210728A (ja) 2006-08-10
JP2006210728A5 JP2006210728A5 (https=) 2006-12-21
JP4628807B2 true JP4628807B2 (ja) 2011-02-09

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ID=36754980

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JP2005022114A Expired - Lifetime JP4628807B2 (ja) 2005-01-28 2005-01-28 真空処理装置および真空処理方法

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US (1) US7194821B2 (https=)
JP (1) JP4628807B2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP5117818B2 (ja) * 2007-10-30 2013-01-16 ルネサスエレクトロニクス株式会社 表面加工処理装置又は成膜処理装置の異物検査・解析のための管理装置及び方法
JP5731881B2 (ja) * 2011-04-12 2015-06-10 株式会社日立ハイテクノロジーズ プラズマ処理装置及びその運転方法
US10428807B2 (en) * 2011-12-09 2019-10-01 Applied Materials, Inc. Pump power consumption enhancement
DE102012010522A1 (de) * 2012-05-25 2013-11-28 Hydac Fluidtechnik Gmbh Ventil für Ventilanordnung
US10309722B1 (en) 2013-03-14 2019-06-04 International Research Institute Inc. Microwave and vacuum drying device, system, and related methods
US9575494B2 (en) * 2013-11-14 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for processing wafer
JP6613402B2 (ja) * 2015-03-13 2019-12-04 Ｖｉｓｔａ株式会社 真空排気監視装置
US10119529B2 (en) * 2015-03-17 2018-11-06 Varian Semiconductor Equipment Associates, Inc. Cryopump arrangement for improved pump speed
JP6991795B2 (ja) * 2017-08-30 2022-01-13 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
WO2019053836A1 (ja) * 2017-09-14 2019-03-21 株式会社日立ハイテクノロジーズ プラズマ処理装置およびウェットクリーニング方法
CN112067370B (zh) * 2020-09-11 2024-05-10 上海朋环测控技术股份有限公司 一种吸附管老化仪及方法
JP7200346B1 (ja) * 2021-12-22 2023-01-06 Ｓｐｐテクノロジーズ株式会社 プログラム、情報処理方法、情報処理装置及びモデルの生成方法
CN115389124B (zh) * 2022-07-29 2025-09-16 北京北方华创微电子装备有限公司 半导体工艺参数的确定方法、检测方法及半导体处理设备
CN118064876B (zh) * 2024-04-18 2024-06-21 上海陛通半导体能源科技股份有限公司 化学气相沉积方法及设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215521A (ja) * 1982-06-09 1983-12-15 Hitachi Ltd 水漏洩検出装置
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
US5157960A (en) * 1990-02-06 1992-10-27 Massachusetts Institute Of Technology Method and apparatus for transient measurement of gas permeability in closed-cell foam insulation
JP4109356B2 (ja) * 1998-08-20 2008-07-02 学校法人 龍谷大学 結晶質の窒化炭素膜を形成する方法
JP2002346367A (ja) 2001-05-23 2002-12-03 Nec Corp 真空装置，その真空度制御方法及び真空度制御プログラム
JP3660896B2 (ja) * 2001-07-26 2005-06-15 株式会社日立製作所 プラズマ処理装置のメンテナンス方法

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JP2006210728A (ja) 2006-08-10
US20060168844A1 (en) 2006-08-03
US7194821B2 (en) 2007-03-27

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