JP4622213B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4622213B2
JP4622213B2 JP2003191583A JP2003191583A JP4622213B2 JP 4622213 B2 JP4622213 B2 JP 4622213B2 JP 2003191583 A JP2003191583 A JP 2003191583A JP 2003191583 A JP2003191583 A JP 2003191583A JP 4622213 B2 JP4622213 B2 JP 4622213B2
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JP
Japan
Prior art keywords
film
barrier film
constituent material
main constituent
additive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003191583A
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English (en)
Japanese (ja)
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JP2004006929A5 (enExample
JP2004006929A (ja
Inventor
富生 岩▲崎▼
裕之 太田
勇 浅野
譲 大路
吉孝 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2003191583A priority Critical patent/JP4622213B2/ja
Publication of JP2004006929A publication Critical patent/JP2004006929A/ja
Publication of JP2004006929A5 publication Critical patent/JP2004006929A5/ja
Application granted granted Critical
Publication of JP4622213B2 publication Critical patent/JP4622213B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2003191583A 2003-07-04 2003-07-04 半導体装置 Expired - Fee Related JP4622213B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003191583A JP4622213B2 (ja) 2003-07-04 2003-07-04 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003191583A JP4622213B2 (ja) 2003-07-04 2003-07-04 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000077779A Division JP3468200B2 (ja) 2000-03-15 2000-03-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2004006929A JP2004006929A (ja) 2004-01-08
JP2004006929A5 JP2004006929A5 (enExample) 2006-08-03
JP4622213B2 true JP4622213B2 (ja) 2011-02-02

Family

ID=30438419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003191583A Expired - Fee Related JP4622213B2 (ja) 2003-07-04 2003-07-04 半導体装置

Country Status (1)

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JP (1) JP4622213B2 (enExample)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612253A (en) * 1995-01-31 1997-03-18 Advanced Micro Devices, Inc. Method for forming ordered titanium nitride and titanium silicide upon a semiconductor wafer using a three-step anneal process
JPH10223900A (ja) * 1996-12-03 1998-08-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
US6054331A (en) * 1997-01-15 2000-04-25 Tong Yang Cement Corporation Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate
KR100243285B1 (ko) * 1997-02-27 2000-02-01 윤종용 고유전 커패시터 및 그 제조방법
JPH10289885A (ja) * 1997-04-14 1998-10-27 Hitachi Ltd 半導体装置およびその製造方法
JPH10321810A (ja) * 1997-05-22 1998-12-04 Hitachi Ltd 強誘電体メモリ
JP3917272B2 (ja) * 1997-11-04 2007-05-23 株式会社日立製作所 半導体メモリ
EP0926741A3 (en) * 1997-12-23 1999-11-03 Texas Instruments Incorporated Gate structure and method of forming same
JPH11354732A (ja) * 1998-06-04 1999-12-24 Matsushita Electric Ind Co Ltd 薄膜キャパシタ及びその製造方法
JP2000040800A (ja) * 1998-07-24 2000-02-08 Sharp Corp 強誘電体記憶素子及びその製造方法
KR100318442B1 (ko) * 1998-12-24 2002-02-19 박종섭 반도체소자의금속게이트전극형성방법

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Publication number Publication date
JP2004006929A (ja) 2004-01-08

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