JP2004006929A5 - - Google Patents
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- Publication number
- JP2004006929A5 JP2004006929A5 JP2003191583A JP2003191583A JP2004006929A5 JP 2004006929 A5 JP2004006929 A5 JP 2004006929A5 JP 2003191583 A JP2003191583 A JP 2003191583A JP 2003191583 A JP2003191583 A JP 2003191583A JP 2004006929 A5 JP2004006929 A5 JP 2004006929A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003191583A JP4622213B2 (ja) | 2003-07-04 | 2003-07-04 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003191583A JP4622213B2 (ja) | 2003-07-04 | 2003-07-04 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000077779A Division JP3468200B2 (ja) | 2000-03-15 | 2000-03-15 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006929A JP2004006929A (ja) | 2004-01-08 |
| JP2004006929A5 true JP2004006929A5 (enExample) | 2006-08-03 |
| JP4622213B2 JP4622213B2 (ja) | 2011-02-02 |
Family
ID=30438419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003191583A Expired - Fee Related JP4622213B2 (ja) | 2003-07-04 | 2003-07-04 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4622213B2 (enExample) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612253A (en) * | 1995-01-31 | 1997-03-18 | Advanced Micro Devices, Inc. | Method for forming ordered titanium nitride and titanium silicide upon a semiconductor wafer using a three-step anneal process |
| JPH10223900A (ja) * | 1996-12-03 | 1998-08-21 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
| US6054331A (en) * | 1997-01-15 | 2000-04-25 | Tong Yang Cement Corporation | Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate |
| KR100243285B1 (ko) * | 1997-02-27 | 2000-02-01 | 윤종용 | 고유전 커패시터 및 그 제조방법 |
| JPH10289885A (ja) * | 1997-04-14 | 1998-10-27 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JPH10321810A (ja) * | 1997-05-22 | 1998-12-04 | Hitachi Ltd | 強誘電体メモリ |
| JP3917272B2 (ja) * | 1997-11-04 | 2007-05-23 | 株式会社日立製作所 | 半導体メモリ |
| EP0926741A3 (en) * | 1997-12-23 | 1999-11-03 | Texas Instruments Incorporated | Gate structure and method of forming same |
| JPH11354732A (ja) * | 1998-06-04 | 1999-12-24 | Matsushita Electric Ind Co Ltd | 薄膜キャパシタ及びその製造方法 |
| JP2000040800A (ja) * | 1998-07-24 | 2000-02-08 | Sharp Corp | 強誘電体記憶素子及びその製造方法 |
| KR100318442B1 (ko) * | 1998-12-24 | 2002-02-19 | 박종섭 | 반도체소자의금속게이트전극형성방법 |
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2003
- 2003-07-04 JP JP2003191583A patent/JP4622213B2/ja not_active Expired - Fee Related