JP4621525B2 - Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 - Google Patents

Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 Download PDF

Info

Publication number
JP4621525B2
JP4621525B2 JP2005099485A JP2005099485A JP4621525B2 JP 4621525 B2 JP4621525 B2 JP 4621525B2 JP 2005099485 A JP2005099485 A JP 2005099485A JP 2005099485 A JP2005099485 A JP 2005099485A JP 4621525 B2 JP4621525 B2 JP 4621525B2
Authority
JP
Japan
Prior art keywords
group
general formula
acid
positive resist
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005099485A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006276760A5 (enExample
JP2006276760A (ja
Inventor
安大 川西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2005099485A priority Critical patent/JP4621525B2/ja
Publication of JP2006276760A publication Critical patent/JP2006276760A/ja
Publication of JP2006276760A5 publication Critical patent/JP2006276760A5/ja
Application granted granted Critical
Publication of JP4621525B2 publication Critical patent/JP4621525B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2005099485A 2005-03-30 2005-03-30 Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 Expired - Fee Related JP4621525B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005099485A JP4621525B2 (ja) 2005-03-30 2005-03-30 Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005099485A JP4621525B2 (ja) 2005-03-30 2005-03-30 Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Publications (3)

Publication Number Publication Date
JP2006276760A JP2006276760A (ja) 2006-10-12
JP2006276760A5 JP2006276760A5 (enExample) 2008-05-01
JP4621525B2 true JP4621525B2 (ja) 2011-01-26

Family

ID=37211555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005099485A Expired - Fee Related JP4621525B2 (ja) 2005-03-30 2005-03-30 Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Country Status (1)

Country Link
JP (1) JP4621525B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4770244B2 (ja) * 2005-04-11 2011-09-14 Ｊｓｒ株式会社 オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
JP4810862B2 (ja) * 2005-04-11 2011-11-09 Ｊｓｒ株式会社 オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
WO2010134640A1 (en) * 2009-05-22 2010-11-25 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
JP5548526B2 (ja) * 2009-06-03 2014-07-16 富士フイルム株式会社 感活性光線または感放射線樹脂組成物および該組成物を用いたパターン形成方法
JP5618557B2 (ja) * 2010-01-29 2014-11-05 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JPWO2011108667A1 (ja) * 2010-03-03 2013-06-27 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法及びスルホニウム化合物
JP6244109B2 (ja) * 2013-05-31 2017-12-06 東京応化工業株式会社 レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法
JP6240409B2 (ja) * 2013-05-31 2017-11-29 サンアプロ株式会社 スルホニウム塩および光酸発生剤
US20180282466A1 (en) * 2014-10-31 2018-10-04 Horiba Stec, Co., Ltd. Polymer material for self-assembly, self-assembled film, method of producing self-assembled film, and projection and depression pattern
JP6456176B2 (ja) * 2015-02-10 2019-01-23 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
US10416558B2 (en) * 2016-08-05 2019-09-17 Shin-Etsu Chemical Co., Ltd. Positive resist composition, resist pattern forming process, and photomask blank
JP6991785B2 (ja) * 2016-09-07 2022-01-13 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP6991786B2 (ja) * 2016-09-07 2022-02-03 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7204343B2 (ja) 2017-06-06 2023-01-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JPWO2019131351A1 (ja) * 2017-12-27 2020-12-24 富士フイルム株式会社 レジスト組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
TW202528396A (zh) * 2023-11-09 2025-07-16 日商大阪有機化學工業股份有限公司 共聚物、非線性光學材料和電光學元件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP4145075B2 (ja) * 2002-05-27 2008-09-03 富士フイルム株式会社 感放射線性樹脂組成物

Also Published As

Publication number Publication date
JP2006276760A (ja) 2006-10-12

Similar Documents

Publication Publication Date Title
JP4909768B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4621525B2 (ja) Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2007279699A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4478601B2 (ja) ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP2006276759A (ja) Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4121396B2 (ja) ポジ型レジスト組成物
JP4368282B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4533771B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4568662B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5039622B2 (ja) ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP2006276742A (ja) ポジ型レジスト組成物およびそれを用いたパターン形成方法
KR101129515B1 (ko) 포지티브 레지스트 조성물 및 그것을 사용한 패턴형성방법
JP4324433B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4338567B2 (ja) Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005274877A (ja) Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005091713A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法。
JP4696010B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006030232A (ja) 感光性組成物及びそれを用いたパターン形成方法
JP2006091677A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4452563B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4580841B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005257884A (ja) ポジ型レジスト組成物及びパターン形成方法
JP2006251551A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法。
JP4533831B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4719542B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061127

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071108

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071115

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080314

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080314

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100702

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100727

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100908

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101005

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101101

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131105

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4621525

Country of ref document: JP

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees