JP4617546B2 - アレイ型ブロードストライプ半導体レーザおよびその製造方法 - Google Patents

アレイ型ブロードストライプ半導体レーザおよびその製造方法 Download PDF

Info

Publication number
JP4617546B2
JP4617546B2 JP2000235342A JP2000235342A JP4617546B2 JP 4617546 B2 JP4617546 B2 JP 4617546B2 JP 2000235342 A JP2000235342 A JP 2000235342A JP 2000235342 A JP2000235342 A JP 2000235342A JP 4617546 B2 JP4617546 B2 JP 4617546B2
Authority
JP
Japan
Prior art keywords
layer
type
contact
substrate
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000235342A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002050829A5 (enrdf_load_stackoverflow
JP2002050829A (ja
Inventor
照二 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000235342A priority Critical patent/JP4617546B2/ja
Publication of JP2002050829A publication Critical patent/JP2002050829A/ja
Publication of JP2002050829A5 publication Critical patent/JP2002050829A5/ja
Application granted granted Critical
Publication of JP4617546B2 publication Critical patent/JP4617546B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
JP2000235342A 2000-08-03 2000-08-03 アレイ型ブロードストライプ半導体レーザおよびその製造方法 Expired - Fee Related JP4617546B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000235342A JP4617546B2 (ja) 2000-08-03 2000-08-03 アレイ型ブロードストライプ半導体レーザおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000235342A JP4617546B2 (ja) 2000-08-03 2000-08-03 アレイ型ブロードストライプ半導体レーザおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2002050829A JP2002050829A (ja) 2002-02-15
JP2002050829A5 JP2002050829A5 (enrdf_load_stackoverflow) 2007-02-15
JP4617546B2 true JP4617546B2 (ja) 2011-01-26

Family

ID=18727568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000235342A Expired - Fee Related JP4617546B2 (ja) 2000-08-03 2000-08-03 アレイ型ブロードストライプ半導体レーザおよびその製造方法

Country Status (1)

Country Link
JP (1) JP4617546B2 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5479765B2 (ja) * 2009-03-27 2014-04-23 古河電気工業株式会社 一次元アレイ素子の製造方法および一次元アレイ素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04216691A (ja) * 1990-12-17 1992-08-06 Sony Corp 半導体レーザ装置とその製法
JPH04364084A (ja) * 1991-06-11 1992-12-16 Sony Corp 波長多重レーザ
JPH0563298A (ja) * 1991-09-04 1993-03-12 Kubota Corp 半導体レーザの製造方法
JPH10200204A (ja) * 1997-01-06 1998-07-31 Fuji Xerox Co Ltd 面発光型半導体レーザ、その製造方法およびこれを用いた面発光型半導体レーザアレイ
JP2000011417A (ja) * 1998-06-26 2000-01-14 Toshiba Corp 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置

Also Published As

Publication number Publication date
JP2002050829A (ja) 2002-02-15

Similar Documents

Publication Publication Date Title
JP3897186B2 (ja) 化合物半導体レーザ
JP4169821B2 (ja) 発光ダイオード
US6754245B2 (en) GaN series surface-emitting laser diode having spacer for effective diffusion of holes between p-type electrode and active layer, and method for manufacturing the same
TW200423218A (en) Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
CN111146689A (zh) FP腔GaN基激光器及其制作方法
JPH07162086A (ja) 半導体レーザの製造方法
JP4362125B2 (ja) 側面発光半導体素子及び側面発光半導体素子の製造方法
US20110013659A1 (en) Semiconductor laser device and method of manufacturing the same
JP4617546B2 (ja) アレイ型ブロードストライプ半導体レーザおよびその製造方法
US5359619A (en) Multi-beam semiconductor laser and method for producing the same
US20170244220A1 (en) Semiconductor light-emitting device and method for manufacturing the same
JPH10256647A (ja) 半導体レーザ素子およびその製造方法
JP5204690B2 (ja) 分布帰還型半導体レーザ及びその製造方法
JP4497606B2 (ja) 半導体レーザ装置
JP4964027B2 (ja) 窒化物系半導体レーザ素子の作製方法
KR100781118B1 (ko) 반도체 레이저 소자의 제조 방법
KR100386243B1 (ko) 청색 반도체 레이저 및 그 제조방법
JP2605478B2 (ja) 半導体レーザ装置の製造方法
JP3950473B2 (ja) 化合物半導体レーザ
JPH11251678A (ja) 半導体レーザ及びその製造方法
KR100568273B1 (ko) AlGaInP계 반도체 레이저 및 그 제조방법
JP2910119B2 (ja) 半導体レーザ
CN119297737A (zh) 一种半导体激光器芯片及其制备方法
CN120453853A (zh) 一种光子晶体表面发射激光器及其制备方法
JP2009266891A (ja) 半導体レーザおよびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061226

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061226

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20091021

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20091026

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20091104

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100408

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100928

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101011

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131105

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131105

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees