JP4616281B2 - 低オフセット・バンドギャップ電圧基準 - Google Patents
低オフセット・バンドギャップ電圧基準 Download PDFInfo
- Publication number
- JP4616281B2 JP4616281B2 JP2006548305A JP2006548305A JP4616281B2 JP 4616281 B2 JP4616281 B2 JP 4616281B2 JP 2006548305 A JP2006548305 A JP 2006548305A JP 2006548305 A JP2006548305 A JP 2006548305A JP 4616281 B2 JP4616281 B2 JP 4616281B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- transistors
- amplifier
- voltage
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012937 correction Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 7
- 230000003321 amplification Effects 0.000 abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/756,155 US7211993B2 (en) | 2004-01-13 | 2004-01-13 | Low offset bandgap voltage reference |
| PCT/EP2005/050047 WO2005069098A1 (en) | 2004-01-13 | 2005-01-06 | A low offset bandgap voltage reference |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007518173A JP2007518173A (ja) | 2007-07-05 |
| JP2007518173A5 JP2007518173A5 (enExample) | 2007-12-20 |
| JP4616281B2 true JP4616281B2 (ja) | 2011-01-19 |
Family
ID=34739772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006548305A Expired - Lifetime JP4616281B2 (ja) | 2004-01-13 | 2005-01-06 | 低オフセット・バンドギャップ電圧基準 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7211993B2 (enExample) |
| JP (1) | JP4616281B2 (enExample) |
| CN (1) | CN100527041C (enExample) |
| TW (1) | TWI271608B (enExample) |
| WO (1) | WO2005069098A1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7543253B2 (en) * | 2003-10-07 | 2009-06-02 | Analog Devices, Inc. | Method and apparatus for compensating for temperature drift in semiconductor processes and circuitry |
| US7211993B2 (en) * | 2004-01-13 | 2007-05-01 | Analog Devices, Inc. | Low offset bandgap voltage reference |
| US7113025B2 (en) * | 2004-04-16 | 2006-09-26 | Raum Technology Corp. | Low-voltage bandgap voltage reference circuit |
| US7173407B2 (en) * | 2004-06-30 | 2007-02-06 | Analog Devices, Inc. | Proportional to absolute temperature voltage circuit |
| US7439601B2 (en) * | 2004-09-14 | 2008-10-21 | Agere Systems Inc. | Linear integrated circuit temperature sensor apparatus with adjustable gain and offset |
| DE102005033434A1 (de) * | 2005-07-18 | 2007-01-25 | Infineon Technologies Ag | Referenzspannungserzeugungsschaltung zur Erzeugung kleiner Referenzspannungen |
| US7514998B2 (en) * | 2005-12-07 | 2009-04-07 | California Institute Of Technology | Wide-temperature integrated operational amplifier |
| US7463014B2 (en) * | 2006-02-27 | 2008-12-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | High impedance current mirror with feedback |
| US7576598B2 (en) * | 2006-09-25 | 2009-08-18 | Analog Devices, Inc. | Bandgap voltage reference and method for providing same |
| US8102201B2 (en) | 2006-09-25 | 2012-01-24 | Analog Devices, Inc. | Reference circuit and method for providing a reference |
| US7486129B2 (en) * | 2007-03-01 | 2009-02-03 | Freescale Semiconductor, Inc. | Low power voltage reference |
| US7714563B2 (en) * | 2007-03-13 | 2010-05-11 | Analog Devices, Inc. | Low noise voltage reference circuit |
| US20080265860A1 (en) * | 2007-04-30 | 2008-10-30 | Analog Devices, Inc. | Low voltage bandgap reference source |
| US7605578B2 (en) | 2007-07-23 | 2009-10-20 | Analog Devices, Inc. | Low noise bandgap voltage reference |
| KR100942275B1 (ko) | 2007-08-06 | 2010-02-16 | 한양대학교 산학협력단 | 기준 전압 발생기 |
| WO2009037532A1 (en) * | 2007-09-21 | 2009-03-26 | Freescale Semiconductor, Inc. | Band-gap voltage reference circuit |
| US7612606B2 (en) * | 2007-12-21 | 2009-11-03 | Analog Devices, Inc. | Low voltage current and voltage generator |
| US7598799B2 (en) * | 2007-12-21 | 2009-10-06 | Analog Devices, Inc. | Bandgap voltage reference circuit |
| US7750728B2 (en) * | 2008-03-25 | 2010-07-06 | Analog Devices, Inc. | Reference voltage circuit |
| US7880533B2 (en) * | 2008-03-25 | 2011-02-01 | Analog Devices, Inc. | Bandgap voltage reference circuit |
| US7902912B2 (en) * | 2008-03-25 | 2011-03-08 | Analog Devices, Inc. | Bias current generator |
| US8159206B2 (en) * | 2008-06-10 | 2012-04-17 | Analog Devices, Inc. | Voltage reference circuit based on 3-transistor bandgap cell |
| US8262286B2 (en) * | 2008-11-18 | 2012-09-11 | Toshiba America Electronic Components, Inc. | Digital output temperature sensor |
| US8169256B2 (en) * | 2009-02-18 | 2012-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bandgap reference circuit with an output insensitive to offset voltage |
| US7772920B1 (en) * | 2009-05-29 | 2010-08-10 | Linear Technology Corporation | Low thermal hysteresis bandgap voltage reference |
| US8760216B2 (en) * | 2009-06-09 | 2014-06-24 | Analog Devices, Inc. | Reference voltage generators for integrated circuits |
| US8330445B2 (en) * | 2009-10-08 | 2012-12-11 | Intersil Americas Inc. | Circuits and methods to produce a VPTAT and/or a bandgap voltage with low-glitch preconditioning |
| US8446140B2 (en) * | 2009-11-30 | 2013-05-21 | Intersil Americas Inc. | Circuits and methods to produce a bandgap voltage with low-drift |
| US8278905B2 (en) * | 2009-12-02 | 2012-10-02 | Intersil Americas Inc. | Rotating gain resistors to produce a bandgap voltage with low-drift |
| US20110169551A1 (en) * | 2010-01-08 | 2011-07-14 | Stanescu Cornel D | Temperature sensor and method |
| JP5434695B2 (ja) * | 2010-03-08 | 2014-03-05 | 富士通セミコンダクター株式会社 | バンドギャップ回路、低電圧検出回路及びレギュレータ回路 |
| KR101153651B1 (ko) * | 2010-12-30 | 2012-06-18 | 삼성전기주식회사 | 멀티 전압 레귤레이터 |
| US8687302B2 (en) * | 2012-02-07 | 2014-04-01 | Lsi Corporation | Reference voltage circuit for adaptive power supply |
| US8710901B2 (en) | 2012-07-23 | 2014-04-29 | Lsi Corporation | Reference circuit with curvature correction using additional complementary to temperature component |
| US9235229B2 (en) | 2012-09-14 | 2016-01-12 | Nxp B.V. | Low power fast settling voltage reference circuit |
| US9740229B2 (en) * | 2012-11-01 | 2017-08-22 | Invensense, Inc. | Curvature-corrected bandgap reference |
| US9098098B2 (en) | 2012-11-01 | 2015-08-04 | Invensense, Inc. | Curvature-corrected bandgap reference |
| US8830618B2 (en) | 2012-12-31 | 2014-09-09 | Lsi Corporation | Fly height control for hard disk drives |
| US9780652B1 (en) | 2013-01-25 | 2017-10-03 | Ali Tasdighi Far | Ultra-low power and ultra-low voltage bandgap voltage regulator device and method thereof |
| US9063556B2 (en) | 2013-02-11 | 2015-06-23 | Omnivision Technologies, Inc. | Bandgap reference circuit with offset voltage removal |
| EP2772736B1 (en) * | 2013-02-27 | 2016-04-20 | ST-Ericsson SA | Temperature sensor with layered architecture |
| RU2530260C1 (ru) * | 2013-04-23 | 2014-10-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ФГБОУ ВПО "ЮРГУЭС") | Температурно стабильный источник опорного напряжения на основе стабилитрона |
| US9519304B1 (en) | 2014-07-10 | 2016-12-13 | Ali Tasdighi Far | Ultra-low power bias current generation and utilization in current and voltage source and regulator devices |
| CN104503528B (zh) * | 2014-12-24 | 2016-03-30 | 电子科技大学 | 一种降低失调影响的低噪声带隙基准电路 |
| US10177713B1 (en) | 2016-03-07 | 2019-01-08 | Ali Tasdighi Far | Ultra low power high-performance amplifier |
| KR102451873B1 (ko) * | 2016-12-13 | 2022-10-06 | 현대자동차 주식회사 | 저항값 측정 장치 |
| US9989981B1 (en) * | 2017-06-16 | 2018-06-05 | Apple Inc. | Cascaded LDO voltage regulator |
| US11740281B2 (en) | 2018-01-08 | 2023-08-29 | Proteantecs Ltd. | Integrated circuit degradation estimation and time-of-failure prediction using workload and margin sensing |
| EP4009132B1 (en) * | 2020-12-03 | 2024-11-20 | NXP USA, Inc. | Bandgap reference voltage circuit |
| CN113376423B (zh) * | 2021-04-25 | 2023-08-08 | 合肥中感微电子有限公司 | 一种电压检测电路 |
| US11619551B1 (en) * | 2022-01-27 | 2023-04-04 | Proteantecs Ltd. | Thermal sensor for integrated circuit |
| TWI889463B (zh) * | 2024-07-22 | 2025-07-01 | 大麗科技股份有限公司 | Cmos溫度補償器及其感測方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4603291A (en) * | 1984-06-26 | 1986-07-29 | Linear Technology Corporation | Nonlinearity correction circuit for bandgap reference |
| CH661600A5 (fr) * | 1985-01-17 | 1987-07-31 | Centre Electron Horloger | Source de tension de reference. |
| US4808908A (en) * | 1988-02-16 | 1989-02-28 | Analog Devices, Inc. | Curvature correction of bipolar bandgap references |
| DE68911708T2 (de) * | 1988-02-19 | 1994-06-30 | Philips Nv | Bandabstand-Referenzspannungsschaltung. |
| US4939442A (en) * | 1989-03-30 | 1990-07-03 | Texas Instruments Incorporated | Bandgap voltage reference and method with further temperature correction |
| US4896094A (en) * | 1989-06-30 | 1990-01-23 | Motorola, Inc. | Bandgap reference circuit with improved output reference voltage |
| US5053640A (en) * | 1989-10-25 | 1991-10-01 | Silicon General, Inc. | Bandgap voltage reference circuit |
| SE466060C (sv) * | 1990-02-13 | 1995-09-11 | Moelnlycke Ab | Absorberande kemitermomekanisk massa och framställning därav |
| US5126653A (en) | 1990-09-28 | 1992-06-30 | Analog Devices, Incorporated | Cmos voltage reference with stacked base-to-emitter voltages |
| US5129653A (en) * | 1991-08-01 | 1992-07-14 | Habitat International, Inc. | Golf putting trainer |
| US5352973A (en) * | 1993-01-13 | 1994-10-04 | Analog Devices, Inc. | Temperature compensation bandgap voltage reference and method |
| US5325045A (en) * | 1993-02-17 | 1994-06-28 | Exar Corporation | Low voltage CMOS bandgap with new trimming and curvature correction methods |
| US5424628A (en) * | 1993-04-30 | 1995-06-13 | Texas Instruments Incorporated | Bandgap reference with compensation via current squaring |
| US5512817A (en) * | 1993-12-29 | 1996-04-30 | At&T Corp. | Bandgap voltage reference generator |
| US5519354A (en) * | 1995-06-05 | 1996-05-21 | Analog Devices, Inc. | Integrated circuit temperature sensor with a programmable offset |
| US6292050B1 (en) * | 1997-01-29 | 2001-09-18 | Cardiac Pacemakers, Inc. | Current and temperature compensated voltage reference having improved power supply rejection |
| JP3476363B2 (ja) * | 1998-06-05 | 2003-12-10 | 日本電気株式会社 | バンドギャップ型基準電圧発生回路 |
| US6121824A (en) | 1998-12-30 | 2000-09-19 | Ion E. Opris | Series resistance compensation in translinear circuits |
| US6157245A (en) | 1999-03-29 | 2000-12-05 | Texas Instruments Incorporated | Exact curvature-correcting method for bandgap circuits |
| US6514209B1 (en) * | 1999-06-07 | 2003-02-04 | Drexel University | Method of enhancing ultrasonic techniques via measurement of ultraharmonic signals |
| US6218822B1 (en) * | 1999-10-13 | 2001-04-17 | National Semiconductor Corporation | CMOS voltage reference with post-assembly curvature trim |
| DE10047620B4 (de) * | 2000-09-26 | 2012-01-26 | Infineon Technologies Ag | Schaltung zum Erzeugen einer Referenzspannung auf einem Halbleiterchip |
| US6304109B1 (en) * | 2000-12-05 | 2001-10-16 | Analog Devices, Inc. | High gain CMOS amplifier |
| US6614209B1 (en) * | 2002-04-29 | 2003-09-02 | Ami Semiconductor, Inc. | Multi stage circuits for providing a bandgap voltage reference less dependent on or independent of a resistor ratio |
| US6690228B1 (en) * | 2002-12-11 | 2004-02-10 | Texas Instruments Incorporated | Bandgap voltage reference insensitive to voltage offset |
| US6885178B2 (en) * | 2002-12-27 | 2005-04-26 | Analog Devices, Inc. | CMOS voltage bandgap reference with improved headroom |
| US6828847B1 (en) | 2003-02-27 | 2004-12-07 | Analog Devices, Inc. | Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference |
| US6958643B2 (en) * | 2003-07-16 | 2005-10-25 | Analog Microelectrics, Inc. | Folded cascode bandgap reference voltage circuit |
| US7211993B2 (en) | 2004-01-13 | 2007-05-01 | Analog Devices, Inc. | Low offset bandgap voltage reference |
| US7113025B2 (en) * | 2004-04-16 | 2006-09-26 | Raum Technology Corp. | Low-voltage bandgap voltage reference circuit |
| US7193454B1 (en) * | 2004-07-08 | 2007-03-20 | Analog Devices, Inc. | Method and a circuit for producing a PTAT voltage, and a method and a circuit for producing a bandgap voltage reference |
-
2004
- 2004-01-13 US US10/756,155 patent/US7211993B2/en not_active Expired - Lifetime
-
2005
- 2005-01-06 CN CN200580002389.2A patent/CN100527041C/zh not_active Expired - Lifetime
- 2005-01-06 JP JP2006548305A patent/JP4616281B2/ja not_active Expired - Lifetime
- 2005-01-06 WO PCT/EP2005/050047 patent/WO2005069098A1/en not_active Ceased
- 2005-01-11 TW TW094100747A patent/TWI271608B/zh not_active IP Right Cessation
-
2007
- 2007-03-12 US US11/716,842 patent/US7372244B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN100527041C (zh) | 2009-08-12 |
| US20050151528A1 (en) | 2005-07-14 |
| TWI271608B (en) | 2007-01-21 |
| US20070170906A1 (en) | 2007-07-26 |
| JP2007518173A (ja) | 2007-07-05 |
| CN1947079A (zh) | 2007-04-11 |
| TW200537270A (en) | 2005-11-16 |
| WO2005069098A1 (en) | 2005-07-28 |
| US7211993B2 (en) | 2007-05-01 |
| US7372244B2 (en) | 2008-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4616281B2 (ja) | 低オフセット・バンドギャップ電圧基準 | |
| US6885178B2 (en) | CMOS voltage bandgap reference with improved headroom | |
| US7173407B2 (en) | Proportional to absolute temperature voltage circuit | |
| US7088085B2 (en) | CMOS bandgap current and voltage generator | |
| US7304466B1 (en) | Voltage reference circuit compensated for non-linearity in temperature characteristic of diode | |
| JP4817825B2 (ja) | 基準電圧発生回路 | |
| JP3586073B2 (ja) | 基準電圧発生回路 | |
| US7880533B2 (en) | Bandgap voltage reference circuit | |
| US7053694B2 (en) | Band-gap circuit with high power supply rejection ratio | |
| US7323857B2 (en) | Current source with adjustable temperature coefficient | |
| US20080265860A1 (en) | Low voltage bandgap reference source | |
| US7208998B2 (en) | Bias circuit for high-swing cascode current mirrors | |
| JP2008108009A (ja) | 基準電圧発生回路 | |
| CN103792980A (zh) | 参考电压产生电路 | |
| US6242897B1 (en) | Current stacked bandgap reference voltage source | |
| US11662761B2 (en) | Reference voltage circuit | |
| US10379567B2 (en) | Bandgap reference circuitry | |
| US7605578B2 (en) | Low noise bandgap voltage reference | |
| US12468325B2 (en) | Reference current source | |
| JP2006031246A (ja) | 基準電流発生回路 | |
| TW202520024A (zh) | 電壓參考電路、積體電路以及用以產生參考電壓之方法 | |
| JP2024003332A (ja) | 基準電圧源回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071030 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071030 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100924 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101021 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4616281 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131029 Year of fee payment: 3 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D04 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |