JP4616237B2 - シリコン化合物薄膜の形成方法 - Google Patents
シリコン化合物薄膜の形成方法 Download PDFInfo
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- JP4616237B2 JP4616237B2 JP2006301357A JP2006301357A JP4616237B2 JP 4616237 B2 JP4616237 B2 JP 4616237B2 JP 2006301357 A JP2006301357 A JP 2006301357A JP 2006301357 A JP2006301357 A JP 2006301357A JP 4616237 B2 JP4616237 B2 JP 4616237B2
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- 成膜室の内部に膜形成対象の基板を載置する第1工程と、
前記成膜室とこれにプラズマ引出口を介して連通するプラズマ生成室との内部を真空排気する第2工程と、
前記プラズマ生成室において生成した第1プラズマを前記プラズマ引出口より引き出し、シリコンソースガスを供給している基板の表面に引き出した前記プラズマを照射して前記基板の上にシリコン化合物を堆積すると共に、
前記プラズマ生成室とは異なる位置で前記成膜室に連通するスパッタ室の内部に固定された希土類金属を含むターゲットに電力を印加して第2プラズマを生成し、この第2プラズマ中のイオンを前記ターゲットに衝突させてスパッタ現象を起こすことで、前記ターゲットを構成する希土類元素を飛び出させて前記基板に到達させ、
前記基板の上に前記希土類元素が添加された前記シリコン化合物よりなるシリコン化合物薄膜が形成された状態とする第3工程と
を備えることを特徴とするシリコン化合物薄膜の形成方法。 - 請求項1記載のシリコン化合物薄膜の形成方法において、
前記第1プラズマは、電子サイクロトロン共鳴法により生成し、発散磁界により前記プラズマ引出口より引き出して基板の表面に照射する
ことを特徴とするシリコン化合物薄膜の形成方法。 - 請求項1又は2記載のシリコン化合物薄膜の形成方法において、
前記ターゲットに印加する前記電力を制御することで、前記シリコン化合物薄膜の膜厚方向の前記希土類元素の濃度を制御する
ことを特徴とするシリコン化合物薄膜の形成方法。 - 請求項1又は2記載のシリコン化合物薄膜の形成方法において、
前記スパッタ室と前記成膜室とを連通する連通孔の前記成膜室側に配置されたシャッターの開閉により、前記ターゲットより飛び出した前記希土類元素の前記基板への到達数を制御し、前記シリコン化合物薄膜の膜厚方向の前記希土類元素の濃度を制御する
ことを特徴とするシリコン化合物薄膜の形成方法。
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