JP4610867B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4610867B2
JP4610867B2 JP2003168912A JP2003168912A JP4610867B2 JP 4610867 B2 JP4610867 B2 JP 4610867B2 JP 2003168912 A JP2003168912 A JP 2003168912A JP 2003168912 A JP2003168912 A JP 2003168912A JP 4610867 B2 JP4610867 B2 JP 4610867B2
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Japan
Prior art keywords
laser
substrate
laser light
laser beam
manufacturing
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Expired - Fee Related
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JP2003168912A
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Japanese (ja)
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JP2004072086A (ja
JP2004072086A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003168912A priority Critical patent/JP4610867B2/ja
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Publication of JP2004072086A5 publication Critical patent/JP2004072086A5/ja
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Publication of JP4610867B2 publication Critical patent/JP4610867B2/ja
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  • Laser Beam Processing (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2003168912A 2002-06-14 2003-06-13 半導体装置の作製方法 Expired - Fee Related JP4610867B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003168912A JP4610867B2 (ja) 2002-06-14 2003-06-13 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002173599 2002-06-14
JP2003168912A JP4610867B2 (ja) 2002-06-14 2003-06-13 半導体装置の作製方法

Publications (3)

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JP2004072086A JP2004072086A (ja) 2004-03-04
JP2004072086A5 JP2004072086A5 (enrdf_load_stackoverflow) 2006-07-27
JP4610867B2 true JP4610867B2 (ja) 2011-01-12

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Family Applications (1)

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JP2003168912A Expired - Fee Related JP4610867B2 (ja) 2002-06-14 2003-06-13 半導体装置の作製方法

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JP (1) JP4610867B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4873858B2 (ja) * 2002-08-19 2012-02-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エッジ領域を最小にするために基板のフィルム領域のレーザ結晶化処理方法及び装置並びにそのようなフィルム領域の構造
SG156607A1 (en) * 2004-07-30 2009-11-26 Mitsuboshi Diamond Ind Co Ltd Method for forming median crack in substrate and apparatus for forming median crack in substrate
JP4586585B2 (ja) * 2005-03-15 2010-11-24 日立電線株式会社 薄膜半導体装置の製造方法
KR100796590B1 (ko) * 2005-07-12 2008-01-21 삼성에스디아이 주식회사 다결정 실리콘 박막의 제조 방법, 이에 사용되는 마스크패턴 및 이를 사용하는 평판 표시 장치의 제조 방법
JP5110830B2 (ja) 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2012156168A (ja) * 2011-01-21 2012-08-16 Disco Abrasive Syst Ltd 分割方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2641101B2 (ja) * 1988-04-12 1997-08-13 株式会社日立製作所 半導体装置の製造方法および装置
JPH09260681A (ja) * 1996-03-23 1997-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH09270393A (ja) * 1996-03-29 1997-10-14 Sanyo Electric Co Ltd レーザー光照射装置
JPH1074697A (ja) * 1996-08-29 1998-03-17 Toshiba Corp 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JPH10199826A (ja) * 1997-01-14 1998-07-31 Fujitsu Ltd レーザ処理容器及びレーザ処理装置
JP4841740B2 (ja) * 2000-04-26 2011-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002141301A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置

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